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    • 37. 发明公开
    • AMPLIFIER ADAPTED FOR NOISE SUPPRESSION
    • 放大器适合噪音抑制
    • EP3272007A1
    • 2018-01-24
    • EP15715174.7
    • 2015-03-16
    • Telefonaktiebolaget LM Ericsson (publ)
    • MASTANTUONO, DanieleMATTISSON, Sven
    • H03F1/26
    • H03F1/26H03F1/0205H03F1/3211H03F1/483H03F3/193H03F3/45179H03F3/607H03F2200/06H03F2200/294H03F2200/333H03F2200/451H03F2203/45306H03F2203/45318H04B1/12
    • An amplifier (100) adapted for noise suppression comprises a first input (102) for receiving a first input signal and a second input (104) for receiving a second input signal, the first and second input signals constituting a differential pair. A first output (106) delivers a first output signal and a second output (108) delivers a second output signal, the first and second output signals constituting a differential pair. A first transistor (MCG1) has a first drain (110) coupled to the first output (106) such that all signal current, except parasitic losses, flowing through the first drain (110) flows through the first output (106), and the first transistor (MCG1) further having a first source (112) coupled to the first input (102). A second transistor (MCS1) has a second gate (116) coupled to the first input (102), a second drain (118) coupled to the second output (108) such that all signal current, except parasitic losses, flowing through the second drain (118) flows through the second output (108), and the second transistor (MCS1) further having a second source (120) coupled to a first voltage rail (122). A third transistor (MCS2) has a third gate (124) coupled to the second input (104), a third drain (126) coupled to the first output (106) such that all signal current, except parasitic losses, flowing through the third drain (126) flows through the first output (106), and the third transistor (MCS2) further having a third source (128) coupled to the first voltage rail (122). A fourth transistor (MCG2) has a fourth drain (130) coupled to the second output (108) such that all signal current, except parasitic losses, flowing through the fourth drain (130) flows through the second output (108), and the fourth transistor (MCG2) further having a fourth source (132) coupled to the second input (104). A first load (ZL1) is coupled between the first output (106) and a second voltage rail (136). A second load (ZL2) is coupled between the second output (108) and the second voltage rail (136). A first inductive element (L1) is coupled between the first input (102) and a third voltage rail (138), and a second inductive element (L2) is coupled between the second input (104) and the third voltage rail (138). Transconductance of the first transistor (MCG1) is substantially equal to transconductance of the fourth transistor (MCG2), within ±5%, and transconductance of the second transistor (MCS1) is substantially equal to transconductance of the third transistor (MCS2), within ±5%.
    • 38. 发明公开
    • HIGH BANDWIDTH AMPLIFIER
    • 高带宽放大器
    • EP3254374A1
    • 2017-12-13
    • EP15709101.8
    • 2015-02-04
    • Telefonaktiebolaget LM Ericsson (publ)
    • MASTANTUONO, DanieleMATTISSON, Sven
    • H03F1/22H03F1/08H03F3/193
    • H03F1/42H03F1/08H03F1/223H03F3/19H03F3/193H03F3/605H03F3/68H03F2200/36H03F2200/451
    • An amplifier (100) comprising: first, second, third and fourth transistors (M1, M2, M3, M4), an input (10) for an input signal, and a first output (22) for a first amplified signal; a first terminal (T11) of the first transistor (M1) coupled to a first voltage rail (12), a second terminal (T12) of the first transistor (M1) coupled to a first terminal (T31) of the third transistor (M3), and a gate (G1) of the first transistor (M1) coupled to the input (10); a first terminal (T21) of the second transistor (M2) coupled to a second voltage rail (14), a second terminal (T22) of the second transistor (M2) coupled to the first output (22), and a gate (G2) of the second transistor (M2) coupled to the input (10); a load (40) coupled between a second terminal (T32) of the third transistor (M3) and a third voltage rail (20), and a gate (G3) of the third transistor (M3) coupled to a bias node (16) for applying a bias voltage to the gate (G3) of the third transistor (M3); a first terminal (T41) of the fourth transistor (M4) coupled to the first output (22), a second terminal (T42) of the fourth transistor (M4) coupled to a fourth voltage rail (24), and a gate (G4) of the fourth transistor (M4) coupled to the second terminal (T32) of the third transistor (M3); and a first capacitive element (C1) coupled between the second terminal (T32) of the third transistor (M3) and the first output (22).
    • 39. 发明公开
    • AN ATTENUATOR
    • 衰减器
    • EP3228005A1
    • 2017-10-11
    • EP14809352.9
    • 2014-12-03
    • Telefonaktiebolaget LM Ericsson (publ)
    • MU, FenghaoMATTISSON, Sven
    • H03H7/25H03G1/00
    • H03H7/25H03G1/0088
    • An attenuator (100) for attenuating a signal is disclosed. The attenuator (100) comprises a differential input port (Inp; Inn) with a positive input node (Inp) and a negative input node (Inn) to receive the signal; and a differential output port (Outp; Outn) with a positive output node (Outp) and a negative output node (Outn) to output the attenuated signal. The attenuator (100) further comprises a first switched resistor network (102) connected between the positive input node (Inp) and the positive output node (Outp); and a second switched resistor network (104) connected between the negative input node (Inn) and the negative output node (Outn). Further a pair of compensation paths is connected to the first and second switched resistor networks (102; 104) for cancellation their parasitic leakages, where a first compensation path (106) is connected between the positive input node (Inp) and the negative output node (Outn), and a second compensation path (108) is connected between the negative input node (Inn) and the positive output node (Outp). The attenuator (100) further comprises a control circuit (110) to generate control signals for controlling the first and second switched resistor networks (102; 104).
    • 公开了一种用于衰减信号的衰减器(100)。 衰减器(100)包括具有正输入节点(Inp)和负输入节点(Inn)的差分输入端口(Inp; Inn)以接收信号; 和具有正输出节点(Outp)和负输出节点(Outn)的差分输出端口(Outp; Outn)以输出衰减信号。 衰减器(100)还包括连接在正输入节点(Inp)和正输出节点(Outp)之间的第一开关电阻网络(102); 和连接在负输入节点(Inn)和负输出节点(Outn)之间的第二切换电阻器网络(104)。 此外,一对补偿路径连接到第一和第二开关电阻网络(102; 104)以消除它们的寄生泄漏,其中第一补偿路径(106)连接在正输入节点(Inp)和负输出节点 (Outn),并且第二补偿路径(108)连接在负输入节点(Inn)和正输出节点(Outp)之间。 衰减器(100)还包括控制电路(110),以产生用于控制第一和第二开关电阻网络(102; 104)的控制信号。
    • 40. 发明授权
    • LOW-NOISE AMPLIFIER
    • RAUSCHARMERVERSTÄRKER
    • EP2947769B1
    • 2017-04-05
    • EP15171109.0
    • 2012-02-01
    • Telefonaktiebolaget LM Ericsson (publ)
    • MATTISSON, SvenANDERSSON, Stefan
    • H03F1/26H03F3/195H03F1/30H03F1/34H03F1/56H03F3/185
    • H03F1/301H03F1/26H03F1/342H03F1/565H03F3/185H03F3/195H03F2200/129H03F2200/294H03F2200/384H03F2200/75
    • A common source or common emitter LNA circuit (30) for amplifying signals at an operating frequency f in a receiver circuit (10) is disclosed. The LNA circuit (30) comprises an input transistor (50) arranged to, in operation, be biased to have a transconductance g m at the operating frequency f, and having a first terminal (52), which is a gate or base terminal, operatively connected to an input terminal (32) of the LNA circuit (30). The LNA circuit (30) further comprises a shunt-feedback capacitor (60) operatively connected between the first terminal (52) of the input transistor (50) and a second terminal (54), which is a drain or collector terminal, of the input transistor (50). Furthermore, the LNA circuit (30) comprises an output capacitor (65) operatively connected between the second terminal (54) of the input transistor (50) and an output terminal (34) of the LNA circuit. The output capacitor (65) has a capacitance value C L
    • 公开了一种用于在接收机电路(10)中以工作频率f放大信号的公共源极或公共发射极LNA电路(30)。 LNA电路(30)包括输入晶体管(50),其被布置成在操作中被偏置为具有在工作频率f处的跨导gm,并且具有作为栅极或基极端子的第一端子(52),其可操作地 连接到LNA电路(30)的输入端子(32)。 LNA电路(30)还包括可操作地连接在输入晶体管(50)的第一端子(52)和作为漏极或集电极端子的第二端子(54)之间的分流反馈电容器(60) 输入晶体管(50)。 此外,LNA电路(30)包括可操作地连接在输入晶体管(50)的第二端子(54)和LNA电路的输出端子(34)之间的输出电容器(65)。 输出电容器65具有电容值C L