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31. 发明公开

EP1122749A3 Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film 审中-公开
标题翻译：交换耦合膜，磁阻阵列，磁阻磁头，以及用于交替离合器膜的制备方法
公开(公告)号：EP1122749A3
公开(公告)日：2001-08-16
申请号：EP01109403.4
申请日：1999-01-13
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Sakakima, Hiroshi , Hirota, Eiichi , Kawawake, Yasuhiro , Satomi, Mitsuo , Sugita, Yasunari
IPC分类号： H01F10/32 , H01L43/10 , G11B5/39 , H01F41/30 , G01R33/09
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B5/3954 , G11B5/3967 , G11B2005/3996 , H01F10/32 , H01F10/3218 , H01F10/3268 , H01F10/3295 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121
摘要： An exchange coupling film of the present invention comprises a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer comprising an (AB) 2 O x layer, wherein A is a single element, and B is a single element, and wherein : O denotes an oxygen atom; 2.8
摘要翻译：交换耦联薄膜的本发明包括其被设置成与所述铁磁性层为钉扎铁磁性层的磁化方向的铁磁层和钉扎层中的所有，钉扎层包括（AB）2 O x层的，worin A是单个元件，而B是一个单独的元件，并worin：O表示氧的原子; 2.8

32. 发明公开

EP1122749A2 Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film 审中-公开
标题翻译：交换耦合膜，磁阻效应器件，磁阻效应头及交换耦合膜的制造方法
公开(公告)号：EP1122749A2
公开(公告)日：2001-08-08
申请号：EP01109403.4
申请日：1999-01-13
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Sakakima, Hiroshi , Hirota, Eiichi , Kawawake, Yasuhiro , Satomi, Mitsuo , Sugita, Yasunari
IPC分类号： H01F10/32 , H01L43/10 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B5/3948 , G11B5/3954 , G11B5/3967 , G11B2005/3996 , H01F10/32 , H01F10/3218 , H01F10/3268 , H01F10/3295 , H01F41/302 , H01L43/10 , Y10S428/90 , Y10T428/1107 , Y10T428/1121
摘要： An exchange coupling film of the present invention comprises a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer comprising an (AB) 2 O x layer, wherein A is a single element, and B is a single element, and wherein : O denotes an oxygen atom; 2.8
摘要翻译：本发明的交换耦合膜包括铁磁层和与铁磁层接触设置的钉扎层，用于钉扎铁磁层的磁化方向，钉扎层包括（AB）2Ox层，其中A是单个元素，并且B是单个元素，并且其中：O表示氧原子; 2.8

33. 发明公开

EP0905802A3 Magnetoresistance effect device, magnetoresistance head and method for producing magnetoresistance effect device 有权
标题翻译：磁阻效应器件，磁阻头及制造磁阻效应器件的方法
公开(公告)号：EP0905802A3
公开(公告)日：1999-05-06
申请号：EP98118338.7
申请日：1998-09-28
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Kawawake, Yasuhiro , Satomi, Mitsuo , Sugita, Yasunari , Sakakima, Hiroshi
IPC分类号： H01L43/10 , H01F10/08 , H01F41/14 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01L43/10
摘要： A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an α-Fe 2 O 3 film. A surface roughness of the multilayer film is about 0.5 nm or less.
摘要翻译：本发明的磁阻效应装置包括多层膜。多层膜包括反铁磁性膜，第一铁磁性膜，非磁性膜和第二铁磁性膜，它们以此顺序直接或通过下层设置在非磁性基板上。反铁磁膜包含α-Fe2O3膜。多层膜的表面粗糙度为约0.5nm或更小。

34. 发明授权

EP0529673B1 Method for manufacturing a thin film 失效
标题翻译：一种生产薄膜的过程
公开(公告)号：EP0529673B1
公开(公告)日：1998-03-11
申请号：EP92114842.5
申请日：1992-08-31
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Kawawake, Yasuhiro , Sugita, Ryuji , Tohma, Kiyokazu , Goto, Yoshiki , Ishida, Tatsuaki
IPC分类号： G11B5/85 , C23C14/00 , C23C14/24
CPC分类号： G11B5/85 , G11B5/733

35. 发明公开

EP0791915A3 Magnetoresistive device and magnetoresistive head 失效
标题翻译：磁致电阻器件和磁致电阻磁头
公开(公告)号：EP0791915A3
公开(公告)日：1998-03-04
申请号：EP97102826.1
申请日：1997-02-21
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Kawawake, Yasuhiro , Satomi, Mitsuo , Sakakima, Hiroshi
IPC分类号： G11B5/00 , G01R33/09
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/39 , G11B5/3903 , G11B2005/3996 , H01F10/3204 , H01F10/3268 , H01L43/08
摘要： A magnetoresistive device of the present invention includes: a soft magnetic layer; a hard magnetic layer; a non-magnetic layer formed between the soft magnetic layer and the hard magnetic layer; and an interface magnetic layer, provided at an interface between the soft magnetic layer and the non-magnetic layer, for enhancing magnetic scattering, wherein the soft magnetic layer includes an amorphous structure.

36. 发明公开

EP0759619A2 Magnetoresistive element and memory element 失效
标题翻译：磁阻元件和Speicherelement
公开(公告)号：EP0759619A2
公开(公告)日：1997-02-26
申请号：EP96113285.9
申请日：1996-08-20
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD
发明人： Sakakima, Hiroshi , Uenoyama, Takeshi , Kawawake, Yasuhiro , Irie, Yousuke
IPC分类号： G11C11/14
CPC分类号： B82Y25/00 , B82Y10/00 , G11B2005/3996 , G11C11/14
摘要： A magnetoresistive effect element having a large magnetoresistive change with a small magnetic field, and a memory element using the same. A semiconductor film 2 to provide a window for excitation light is arranged on a substrate 1 via a buffer layer. Another semiconductor film 3 and a nonmagnetic metallic film (or a nonmagnetic insulating film) 4 are arranged on the semiconductor film 2 successively. A magnetic film 5 having a square magnetization curve is arranged on the nonmagnetic metallic film (or a nonmagnetic insulating film) 4. An electrode 6 is arranged beneath the substrate 1 and another electrode 7 is arranged on the magnetic film 5. By radiating a laser light beam to the semiconductor film acting as a window 2, electrons having spin polarization are excited in the semiconductor film 3 so as to utilize the dependency of the scattering of electrons at the surface of the magnetic film 5 on the magnetization orientation of the magnetic film and the spin polarization state of the excited electrons.
摘要翻译：具有磁阻小的磁阻变化的磁阻效应元件和使用该磁阻效应元件的存储元件。用于提供激发光的窗口的半导体膜2经由缓冲层布置在基板1上。另外的半导体膜3和非磁性金属膜（或非磁性绝缘膜）4依次配置在半导体膜2上。具有方形磁化曲线的磁性膜5被布置在非磁性金属膜（或非磁性绝缘膜）4上。电极6布置在基底1下方，另一电极7设置在磁性膜5上。通过辐射激光作为窗口2的半导体膜的光束，在半导体膜3中激发具有自旋极化的电子，以利用在磁性膜5的表面处的电子的散射对磁性膜的磁化取向的依赖性和激发电子的自旋极化状态。

37. 发明授权

EP0387904B1 Method of producing thin film 失效
标题翻译：一种生产薄膜的过程。
公开(公告)号：EP0387904B1
公开(公告)日：1994-11-09
申请号：EP90105033.6
申请日：1990-03-16
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Tohma, Kiyokazu , Sugita, Ryuji , Honda, Kazuyoshi , Kawawake, Yasuhiro , Ishida, Tatsuaki
IPC分类号： B29C59/16 , C23C14/02
CPC分类号： C23C14/20 , B29C59/16 , B29C2035/0872 , B29C2035/0877 , C23C14/022

38. 发明公开

EP0387904A2 Method of producing thin film 失效
标题翻译： Verfahren zur Herstellung einesdünnenFilmes。
公开(公告)号：EP0387904A2
公开(公告)日：1990-09-19
申请号：EP90105033.6
申请日：1990-03-16
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Tohma, Kiyokazu , Sugita, Ryuji , Honda, Kazuyoshi , Kawawake, Yasuhiro , Ishida, Tatsuaki
IPC分类号： B29C59/16 , C23C14/02
CPC分类号： C23C14/20 , B29C59/16 , B29C2035/0872 , B29C2035/0877 , C23C14/022
摘要： There is disclosed a method of producing a thin film. Ions and electrons (13) are applied from an ion gun (12) to a polymer film (1) while the polymeric film is traveling circumferentially on a peripheral surface of a cylindrical can (2). Subsequently, electrons (7) are applied from an electron gun (8) to the polymer film. Subsequently, the thin film is deposited on the polymer film (1) by vacuum evaporation. With this method, the thin film, having no wrinkle and a high strength of adhesion to the polymer film, can be produced in a stable manner.
摘要翻译：公开了一种制造薄膜的方法。离子和电子（13）从离子枪（12）施加到聚合物膜（1）上，而聚合物膜在圆柱形罐（2）的圆周表面周向行进。随后，电子（7）从电子枪（8）施加到聚合物膜。随后，通过真空蒸发将薄膜沉积在聚合物膜（1）上。通过这种方法，可以稳定地制造没有褶皱的薄膜和与聚合物膜的高粘合强度。

39. 发明授权

EP0681338B1 Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same 失效
标题翻译：的磁阻效应器件和磁头提供的提交，存储和放大装置
公开(公告)号：EP0681338B1
公开(公告)日：2004-10-13
申请号：EP95106589.5
申请日：1995-05-02
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Sakakima, Hiroshi , Irie, Yousuke , Satomi, Mitsuo , Kawawake, Yasuhiro
IPC分类号： H01L43/10 , G11B5/39 , G11C11/15 , H03F15/00
CPC分类号： H03F7/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3925 , G11B2005/3996 , G11C11/15 , G11C11/16 , G11C11/5607 , G11C2211/5616 , H01F10/3281 , H01L27/222 , H01L43/10

40. 发明公开

EP1226878A2 Aligned fine particles, method for producing the same and device using the same 审中-公开
标题翻译：在线路收容细颗粒，它们的制备方法和使用方向装置
公开(公告)号：EP1226878A2
公开(公告)日：2002-07-31
申请号：EP02001702.6
申请日：2002-01-24
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Mino, Norihisa , Kawawake, Yasuhiro , Morita, Kiyoyuki , Yoshii, Shigeo , Murakami, Mutuaki , Kusumoto, Osamu
IPC分类号： B05D1/18 , C09C3/12 , G11B5/39 , G11B5/712 , G11B5/84 , G11C11/16 , H01F41/22 , H01F41/30 , H01L29/788 , H01L43/08 , H01L43/10
CPC分类号： B82Y30/00 , B05D1/185 , B82Y10/00 , B82Y40/00 , C01P2004/03 , C01P2004/62 , C01P2004/64 , C01P2004/86 , C01P2006/33 , C01P2006/42 , C09C3/12 , G11B5/712 , G11B5/74 , G11B5/746 , G11B5/82 , G11B5/84 , G11B2005/0002 , G11C11/14 , G11C11/16 , G11C11/5671 , G11C2216/08 , H01F1/0306 , H01F1/047 , H01F10/007 , H01F10/123 , H01F41/305 , H01L29/42324 , Y10T428/1114 , Y10T428/1193 , Y10T428/24388 , Y10T428/24893 , Y10T428/2991 , Y10T428/2995 , Y10T428/2998 , Y10T428/31667
摘要： The present invention provides aligned fine particles(30) that are aligned on a substrate(32). An organic coating film(31) is bonded to surfaces of the fine particles(30) is formed on the surfaces of the fine particles(30). An organic coating film(33) bonded to a surface of the substrate(32) is formed on the surface of the substrate(32). The organic coating film(31) on the surfaces of the fine particles(31) is bonded(34) to the organic coating film(33) on the surface of the substrate(32), whereby the fine particles(31) are immobilized and aligned on the substrate(32). Thus, it is possible to align the fine particles(31) of a nanometer scale in a specific direction. When fine magnetic particles are used, a magnetic recording medium for high recording density can be obtained, and a high-density magnetic recording/reproducing apparatus can be provided.
摘要翻译：本发明提供了对准微粒（30）是做在衬底（32）对准。有机涂层电影（31）结合到所述微粒（30）的微粒（30）的表面形成的表面。键合到基板（32）的一个表面上的有机涂层的电影（33）形成在基板（32）的表面上。有机涂层电影（31）中的微粒的表面上（31）接合（34）与有机涂层电影（33）在基板的表面上（32），由此所述微粒（31）被固定和在基板（32）对准。因此，有可能以对准一个纳米级的微粒（31）在特定的方向。当使用磁性微粒，适用于高密度记录的磁性记录介质可被获得，并且可提供高密度磁记录/重放装置。

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