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31. 发明公开

EP2185300A1 REFRACTORY METAL PLATES WITH IMPROVED UNIFORMITY OF TEXTURE 有权转让
标题翻译： REFRAKTÄREMETALLPLATTEN MIT VERBESSERTERTEXTURGLEICHMÄSSIGKEIT
公开(公告)号：EP2185300A1
公开(公告)日：2010-05-19
申请号：EP08795025.9
申请日：2008-08-05
申请人： H. C. Starck, Inc.
发明人： JEPSON, Peter, R. , BOZKAYA, Dincer
IPC分类号： B21B1/22 , C22F1/18 , B22F3/18
CPC分类号： H01J37/3426 , B21B1/227 , B21B39/04 , B21B2265/24 , B21B2267/065 , B21B2273/02 , B22F3/18 , C22F1/18 , C23C14/3414 , Y10T428/12 , Y10T428/12014 , Y10T428/12458
摘要： The present invention relates to a manufacturing method and apparatus for producing plates and sheets with shear texture or minimal through-thickness texture gradient.
摘要翻译：本发明涉及一种用于制造具有剪切纹理或最小穿透厚度纹理梯度的板和片材的制造方法和装置。

32. 发明公开

EP2086906A2 TIN OXIDE-BASED SPUTTERING TARGET, LOW RESISTIVITY, TRANSPARENT CONDUCTIVE FILM, METHOD FOR PRODUCING SUCH FILM AND COMPOSITION FOR USE THEREIN 审中-公开
标题翻译：锡氧化物系具有低电阻的透明导电溅射膜，在其中使用这种薄膜及构成方法
公开(公告)号：EP2086906A2
公开(公告)日：2009-08-12
申请号：EP07868630.0
申请日：2007-10-31
申请人： H. C. Starck, Inc.
发明人： KUMAR, Prabhat , WU, Rong-Chein Richard , SUN, Shuwei
IPC分类号： C04B35/457 , C03C17/245 , C23C14/08 , C23C14/34
CPC分类号： C04B35/457 , C03C17/2453 , C03C2217/211 , C03C2218/154 , C04B2235/3251 , C04B2235/3253 , C04B2235/3256 , C04B2235/3258 , C04B2235/404 , C04B2235/5436 , C04B2235/5445 , C23C14/086 , C23C14/3414 , Y10T428/12771 , Y10T428/24364
摘要： The present invention is directed to a composition consisting essentially of: a) from about 60 to about 99 mole% of SnO2, and b) from about 1 to about 40 mole% of one or more materials selected from the group consisting of i) Nb2O5, ii) NbO, iii) NbO2, iv) WO2, v) a material selected consisting of a) a mixture of MoO2 and Mo and b) Mo, vi) W, vii) Ta2O5, and viii) mixtures thereof, wherein the mole %s are based on the totai product and wherein the sum of components a) and b) is 100. The invention is aiso directed to the sintered product of such composition, a sputtering target made from the sintered product and a transparent electroconductive film made from the composition.

33. 发明公开

EP2073947A2 PROCESS FOR PREPARING METAL POWDERS HAVING LOW OXYGEN CONTENT, POWDERS SO-PRODUCED AND USES THEREOF 审中-公开
标题翻译：工艺生产具有低含氧量金属粉末在这个过程中制得的粉末及其用途
公开(公告)号：EP2073947A2
公开(公告)日：2009-07-01
申请号：EP07843733.2
申请日：2007-10-03
申请人： H. C. Starck, Inc.
发明人： SHEKHTER, Leonid, N. , MILLER, Steven, A. , HAYWISER, Leah, F. , WU, Rong-Chein, Richard
IPC分类号： B22F1/00
CPC分类号： B22F1/0088 , B05D1/12 , B05D2401/32 , B22F1/0085 , B22F2999/00 , C23C24/04 , B22F2201/10 , B22F2202/13 , B22F9/20
摘要： The present invention is directed to a process for the preparation of a metal powder having a purity at least as high as the starting powder and having an oxygen content of 10 ppm or less comprising heating said metal powder containing oxygen in the form of an oxide, with the total oxygen content being from 50 to 3000 ppmf in an inert atmosphere at a pressure of from 1 bar to 10-7 to a temperature at which the oxide of the metal powder becomes thermodynamically unstable and removing the resulting oxygen via volatilization. The metal powder is preferably selected from the group consisting of tantalum, niobium, molybdenum, hafnium, zirconium, titanium, vanadium, rhenium and tungsten. The invention also relates to the powders produced by the process and the use of such powders in a cold spray process.

34. 发明公开

EP1733065A1 REFRACTORY METAL POTS 有权
标题翻译：难熔金属POTS
公开(公告)号：EP1733065A1
公开(公告)日：2006-12-20
申请号：EP05726097.8
申请日：2005-03-23
申请人： H. C. Starck, Inc.
发明人： JEPSON, Peter, R.
IPC分类号： C22F1/18
CPC分类号： C22F1/18 , B21J1/025 , B21J5/00 , B21K21/02 , C21D8/0205 , C21D9/46 , Y10S72/70 , Y10T29/49826
摘要： The invention relates to a computer-implemented process for making a pot that involves: (a) cutting an ingot comprising a refractory metal component into a first work piece; (b) subjecting the first work piece to upset forging, and thereby forming a second work piece; (c) subjecting the second work piece to a first annealing step in a vacuum or an inert gas to a first temperature that is sufficiently high to cause at least partial recrystallization of the second work piece, and thereby forming an annealed second work piece; (d) forging-back the annealed second work piece by reducing the diameter of the second work piece, and thereby forming a third work piece; (e)subjecting the third work piece to upset forging, and thereby forming a fourth work piece; (f)forging back the fourth work piece by reducing the diameter of the fourth work piece, and thereby forming a fifth work piece; (g) subjecting the fifth work piece to a. second annealing step to a temperature that is sufficiently high to at least partially recrystallize the fifth work piece; (h) subjecting the fifth work piece to upset forging, and thereby forming a sixth work piece; (i)subjecting the sixth work piece to a third annealing step, and thereby forming an annealed sixth work piece; (j) rolling the annealed sixth work piece into a plate by subjecting the annealed sixth work piece to a plurality of rolling passes; wherein the annealed sixth work piece undergoes a reduction in thickness after at least one pass and the annealed sixth work piece is turned between at least one pass, and thereby forming a plate; and (k)deep drawing the plate into a pot, thereby forming the pot; in which a fourth annealing step is carried out either (1) after step (j) before step (k), or (2) after step (k). Dimensions of at least one work piece or plate suitable for processing into a pot are pre-determined with a computer-implemented finite element modeling assessment method so that at least one work piece in steps (b)-(j) or plate in step (k) has dimensions that are substantially similar to the dimensions determined by the computerimplemented finite element modeling assessment method.

35. 发明授权

EP2185300B1 REFRACTORY METAL PLATES WITH IMPROVED UNIFORMITY OF TEXTURE 有权转让
公开(公告)号：EP2185300B1
公开(公告)日：2018-10-24
申请号：EP08795025.9
申请日：2008-08-05
申请人： H. C. Starck, Inc.
发明人： JEPSON, Peter, R. , BOZKAYA, Dincer
IPC分类号： B22F3/18 , C22F1/18 , B21B1/22 , C23C14/34 , H01J37/34 , B21B39/04
CPC分类号： H01J37/3426 , B21B1/227 , B21B39/04 , B21B2265/24 , B21B2267/065 , B21B2273/02 , B22F3/18 , C22F1/18 , C23C14/3414 , Y10T428/12 , Y10T428/12014 , Y10T428/12458
摘要： The present invention relates to a manufacturing method and apparatus for producing plates and sheets with shear texture or minimal through-thickness texture gradient.

36. 发明授权

EP2097558B1 METHOD OF JOINING TANTALUM CLAD STEEL STRUCTURES 有权转让
标题翻译：的连接方法TANTALUMKASCHIERTEN钢构件
公开(公告)号：EP2097558B1
公开(公告)日：2014-05-28
申请号：EP07869148.2
申请日：2007-12-12
申请人： H. C. Starck, Inc.
发明人： MILLER, Steven A. , SHEKHTER, Leonid Natan , ZIMMERMAN, Stefan
IPC分类号： B23K31/02 , C23C4/06 , C23C4/12 , B32B38/08 , C23C24/04 , C23C24/08 , C23C24/10
CPC分类号： B23K31/02 , B23K2201/18 , B23K2201/34 , B23K2203/04 , B23K2203/05 , B23K2203/16 , B23K2203/166 , B32B38/08 , C23C24/04 , Y10T428/12076 , Y10T428/12347

37. 发明公开

EP2220264A1 REFRACTORY METAL-DOPED SPUTTERING TARGETS 审中-公开
标题翻译：难熔金属溅射靶材
公开(公告)号：EP2220264A1
公开(公告)日：2010-08-25
申请号：EP08841376.0
申请日：2008-10-24
申请人： H. C. Starck, Inc.
发明人： SUN, Shuwei , GAYDOS, Mark , WU, Richard , KUMAR, Prabhat
IPC分类号： C23C14/00 , G11B5/127
CPC分类号： C23C14/3414 , C22C1/002 , C22C1/0425 , C22F1/08 , C23C14/14 , H01B1/02 , H01B1/026 , Y10T428/31678
摘要： Metallic materials consisting essentially of a conductive metal matrix, preferably copper, and a refractory dopant component selected from the group consisting of tantalum, chromium, rhodium, ruthenium, iridium, osmium, platinum, rhenium, niobium, hafnium and mixtures thereof, preferably in an amount of about 0.1 to 6 % by weight based on the metallic material, alloys of such materials, sputtering targets containing the same, methods of making such targets, their use in forming thin films and electronic components containing such thin films.
摘要翻译：主要由导电金属基体，优选铜和选自钽，铬，铑，钌，铱，锇，铂，铼，铌，铪及其混合物的耐火掺杂剂组分组成的金属材料，优选以基于金属材料的量为约0.1至6重量％，这种材料的合金，包含该材料的溅射靶，制造这种靶的方法，它们在形成薄膜中的用途以及包含这种薄膜的电子部件。

38. 发明公开

EP1866449A1 METHOD OF PREPARING PRIMARY REFRACTORY METAL 有权转让
标题翻译：一种用于制备伯钽或铌金属处理
公开(公告)号：EP1866449A1
公开(公告)日：2007-12-19
申请号：EP06738256.4
申请日：2006-03-15
申请人： H. C. Starck, Inc.
发明人： SHEKTER, Leonid, Natan , SIMKINS, Leah, F. , GREVILLE, Hugh, P. , LANIN, Leonid
IPC分类号： C22B34/00
CPC分类号： C22B5/12 , C22B34/24
摘要： A method of preparing primary refractory metais (e.g., primary tantalum metal) by contacting a particulate refractory metal oxide (e.g., tantalum pentoxide) with a heated gas (e.g., a plasma), is described. The heated gas comprises hydrogen gas. The temperature range of the heated gas and the mass ratio of hydrogen gas to refractory metal oxide are each selected such that: (i) the heated gas comprises atomic hydrogen; (ii) the refractory metal oxide feed material is substantially thermodynamically stabilized (i.e., the concurrent formation of suboxides that are not reduced by atomic hydrogen is minimized); and (iii) the refractory metal oxide is reduced by contact with the heated gas, thereby forming primary refractory metal (e.g., primary tantalum metal and/or primary niobium metal).

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