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31. 发明公开

EP2615650A2 III-nitride epitaxial substrate and deep ultraviolet light emiting device using the same 有权转让
标题翻译： III族氮化物外延基板和设备及其使用下发射深紫外光
公开(公告)号：EP2615650A2
公开(公告)日：2013-07-17
申请号：EP13000146.4
申请日：2013-01-11
申请人： DOWA Electronics Materials Co., Ltd.
发明人： Ooshika, Yoshikazu
IPC分类号： H01L33/12 , H01L21/02
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/02458 , H01L21/02507 , H01L21/0254
摘要： A III nitride epitaxial substrate which makes it possible to obtain a deep ultraviolet light emitting device with improved light output power is provided. A III nitride epitaxial substrate 10 includes a substrate 12, an AIN buffer layer 14, a first superlattice laminate 16, a second superlattice laminate 18 and a III nitride laminate 20 in this order. The III nitride laminate 20 includes an active layer 24 including an Al α Ga 1-α N (0.03 ≤ α ) layer. The first superlattice laminate 16 includes Al a Ga 1-a N layers 16A and Al b Ga 1-b N (0.9 b ≤ 1) layers 16B which are alternately stacked, where α a and a b hold. The second superlattice laminate 18 includes repeated layer sets each having an Al x Ga 1-x N layer 18A, an Al y Ga 1-y N layer 18B, and an Al z Ga 1-z N (0.9 z ≤ 1) layer 18C, where α z hold.
摘要翻译：这使得有可能III族氮化物外延衬底以获得具有设置改进的光输出功率的深紫外线发光器件。 III族氮化物外延基板10包括衬底12，在AlN缓冲层14，第一超晶格叠层16，第二超晶格叠层18和以该顺序III族氮化物叠层体20。所述III族氮化物叠层体20包括在有源层24包含Al镓±1±N（0.03‰¤±）层。第一超晶格叠层16包含Al Ga的1-A N和Al b镓层16A 1-B N（0.9

32. 发明公开

EP2613341A1 Epitaxial substrate for electronic device and method of producing the same 审中-公开
标题翻译： Epitaxialsubstratfüreine elektronische Vorrichtung und Verfahren zur Herstellung davon
公开(公告)号：EP2613341A1
公开(公告)日：2013-07-10
申请号：EP13001425.1
申请日：2009-11-18
申请人： DOWA Electronics Materials Co., Ltd.
发明人： Ikuta, Tetsuya , Shimizu, Jo , Shibata, Tomohiko
IPC分类号： H01L21/20 , H01L21/205 , H01L21/338 , H01L29/778 , H01L29/812 , H01L29/737 , H01L21/02 , H01L29/66 , H01L29/20
CPC分类号： H01L21/0254 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L29/2003 , H01L29/66462 , H01L29/7378
摘要： An object of the present invention is to provide an epitaxial substrate for an electronic device, in which a lateral direction of the substrate is defined as a main current conducting direction and a warp configuration of the epitaxial substrate is adequately controlled, as well as a method of producing the epitaxial substrate. Specifically, the epitaxial substrate for an electron device, including: a Si single crystal substrate; and a Group III nitride laminated body formed by epitaxially growing plural Group III nitride layers on the Si single crystal substrate, wherein a lateral direction of the epitaxial substrate is defined as a main current conducting direction, is characterized in that the Si single crystal substrate is a p-type substrate having a specific resistance value of not larger than 0.01 Ω · cm, the epitaxial substrate further comprises a buffer as an insulating layer between the Si single crystal substrate and the Group III nitride laminated body, and the buffer includes a lamination constituted of a superlattice multilayer structure containing carbon at a concentration of 1 × 10 18 /cm 3 or more.
摘要翻译：本发明的目的是提供一种用于电子器件的外延衬底，其中将衬底的横向方向定义为主导电方向，并且外延衬底的翘曲构型被充分地控制，以及一种方法制造外延衬底。具体地，电子装置用外延基板，包括：Si单晶基板; 以及通过在Si单晶衬底上外延生长多个III族氮化物层而形成的III族氮化物层叠体，其中外延衬底的横向被定义为主导电方向，其特征在于，Si单晶衬底是具有比电阻值不大于0.01Ω的p型衬底，所述外延衬底还包括作为所述Si单晶衬底和所述III族氮化物层压体之间的绝缘层的缓冲器，并且所述缓冲器包括层压由含有浓度为1×10 18 / cm 3以上的碳的超晶格多层结构构成。

33. 发明公开

EP2610023A1 LOW-TEMPERATURE SINTERABLE SILVER NANOPARTICLE COMPOSITION AND ELECTRONIC COMPONENT FORMED USING THAT COMPOSITION 有权
标题翻译：低温烧结银纳米粒子组合物以及与此组合物成电子元件
公开(公告)号：EP2610023A1
公开(公告)日：2013-07-03
申请号：EP10849182.0
申请日：2010-08-27
申请人： DOWA Electronics Materials Co., Ltd. , Pchem Associates, Inc.
发明人： JABLONSKI GREGORY A , MASTROPIETRO MICHAEL A , SATO Kimitaka , MIYOSHI Hiromasa , FUJITA Hidefumi
IPC分类号： B22F9/00 , B22F1/00
CPC分类号： C22C5/06 , B22F1/0022 , B22F1/0062 , B22F9/24 , B22F2301/255 , B22F2304/054 , B82Y30/00 , C23C24/087 , C23C24/106 , H05K1/097 , H05K2201/0145 , H05K2201/10098 , Y10T428/24802 , Y10T428/24909
摘要： A silver nanoparticle composition is provided which is possible to be sintered through sintering at a low temperature in a short time and to form silver electro conductive film and wiring which is favorable for adhesion to a substrate and low in resistance, and articles using the same are provided. The silver nanoparticles composition is provided, wherein a main component of a solvent is water, a pH of the composition is within a range of 5.3 to 8.0, a silver nanoparticle included in the composition is protected by an organic acid or a derivative thereof, and the content of the organic acid or the derivative thereof with respect to silver is 2 to 20% by mass.
摘要翻译：将银纳米颗粒组合物中提供的所有这是可能要通过烧结在低温下在短时间内进行烧结，并形成银电导电膜和布线的所有这是在电阻粘附在基材有利和低，并且物品使用相同的是提供。所述银纳米颗粒组合物被提供，worin溶剂的主要成分是水，pH值的组合物的是一个范围为5.3至8.0，包括在所述组合物中的银纳米粒子是由有机酸的衍生物或保护的内容的范围内，和有机酸或其衍生物相对于银的含量为2〜20质量％。

34. 发明授权

EP2067551B1 SILVER PARTICLE COMPOSITE POWDER AND PROCESS FOR PRODUCTION THEREOF 有权
标题翻译：银颗粒复合粉及其生产方法
公开(公告)号：EP2067551B1
公开(公告)日：2013-04-10
申请号：EP07807431.7
申请日：2007-09-11
申请人： DOWA Electronics Materials Co., Ltd.
发明人： OGI, Kozo , HISAEDA, Yutaka
IPC分类号： B22F1/00 , B22F9/24 , C09C1/62 , C09C3/08 , C09D5/24 , C09D7/12 , H01B1/02 , H01B1/22
CPC分类号： H01B1/22 , B22F1/0022 , B22F1/0062 , B22F9/24 , B22F2998/00 , B82Y30/00 , C01P2002/88 , C01P2004/04 , C01P2004/64 , C01P2006/32 , C01P2006/40 , C08K3/08 , C08K9/04 , C09C1/62 , C09C3/08 , C09D5/24 , C09D7/62 , C09D7/67 , H01B1/02 , H05K1/092
摘要： A silver particle composite powder produced by mixing a silver particle powder (A) which bears on the surface of each silver particle, an organic protective layer comprising an amine compound having at least one unsaturated bond in one molecule and having a molecular weight of from 100 to 1000, and has a mean particle diameter D TEM , as determined by TEM, of at most 50 nm and a silver particle powder (B) which bears on the surface of each silver particle, an organic protective layer comprising a fatty acid having a molecular weight of from 100 to 1000 and an amine compound having a molecular weight of from 100 to 1000 with at least any one of the fatty acid and the amine compound having at least one unsaturated bond in one molecule, and has a mean particle diameter D TEM of at most 50 nm, in a blend ratio by mass, A/B of from 3/1 to 1/3 in terms of silver.

35. 发明授权

EP2275511B1 Phosphor, LED and light source 有权转让
标题翻译：磷，以及LED光源
公开(公告)号：EP2275511B1
公开(公告)日：2012-10-24
申请号：EP10010883.6
申请日：2005-07-06
申请人： DOWA Electronics Materials Co., Ltd. , Nichia Corporation
发明人： Nagatomi, Akira , Gotoh, Masahiro , Sakane, Kenji , Yamashita, Shuji
IPC分类号： C09K11/77 , C09K11/08
CPC分类号： C09K11/0883 , C09K11/7734 , Y02B20/181

36. 发明公开

EP2498303A1 III NITRIDE SEMICONDUCTOR VERTICAL-TYPE-STRUCTURE LED CHIP AND PROCESS FOR PRODUCTION THEREOF 审中-公开
标题翻译： III-NITRIDHALBLEITER-LED-CHIP MIT VERTIKALER STRUKTUR UND VERFAHREN ZU SEINER HERSTELLUNG
公开(公告)号：EP2498303A1
公开(公告)日：2012-09-12
申请号：EP09851114.0
申请日：2009-11-05
申请人： Wavesquare Inc. , DOWA Electronics Materials Co., Ltd.
发明人： CHO, Meoung Whan , LEE, Seog Woo , JANG, Pil Guk , TOBA, Ryuichi , TOYOTA, Tatsunori , KADOWAKI, Yoshitaka
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： High quality vertical LED chips with less cracks in the light emitting structures and a method for manufacturing the same are provided. The method includes a light emitting laminate formation step of forming a light emitting laminate by sequentially stacking a first conductivity type Group III nitride semiconductor layer, a light emitting layer, and a second conductivity type Group III nitride semiconductor layer on a growth substrate, the second conductivity type being different from the first conductivity type; a light emitting structure formation step of forming a plurality of separate light emitting structures by partially removing the light emitting laminate to partially expose the growth substrate; a step of forming a connection layer on the plurality of light emitting structures; a step of forming a conductive support which also serves as a lower electrode on the connection layer; a separation step of lifting off the growth substrate from the plurality of light emitting structures; and a cutting step of cutting the conductive support between the light emitting structures thereby singulating a plurality of LED chips each having the light emitting structure. The light emitting structure formation step includes a step of partially removing the light emitting laminate such that each of the plurality of light emitting structures has a top view shape of a circle or a 4n-gon ("n" is a positive integer) having rounded corners.
摘要翻译：提供了在发光结构中具有较少裂纹的高品质垂直LED芯片及其制造方法。该方法包括通过在生长衬底上依次层叠第一导电型III族氮化物半导体层，发光层和第二导电型III族氮化物半导体层来形成发光层叠体的发光层压体形成步骤，第二导电类型不同于第一导电类型; 发光结构形成步骤，通过部分去除所述发光层压体以部分地暴露所述生长衬底来形成多个分离的发光结构; 在所述多个发光结构上形成连接层的步骤; 在连接层上形成还用作下电极的导电支撑件的步骤; 从多个发光结构剥离生长衬底的分离步骤; 以及切割步骤，在所述发光结构之间切割所述导电支撑体，由此分割具有所述发光结构的多个LED芯片。发光结构形成步骤包括以下步骤：部分去除发光层压体，使得多个发光结构中的每一个具有圆形的顶视图形状或具有圆形的4n-gon（“n”为正整数）角落。

37. 发明授权

EP1630219B2 Phosphor and manufacturing mehod for the same, and light source using the same 有权转让
标题翻译：用于其生产荧光灯，光源的方法和所述磷光体
公开(公告)号：EP1630219B2
公开(公告)日：2012-08-01
申请号：EP05018712.9
申请日：2005-08-29
申请人： DOWA Electronics Materials Co., Ltd. , Nichia Corporation
发明人： Sakane, Kenji , Nagatomi, Akira , Gotoh, Masahiro , Yamashita, Shuji , Ikuta, Tetsuya
IPC分类号： C09K11/77 , C09K11/08
CPC分类号： C09K11/7734 , C09K11/0883 , H01L33/502 , Y10T428/2991 , Y10T428/2993

38. 发明公开

EP2455964A1 EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE USING TRANSVERSE DIRECTION AS DIRECTION OF CURRENT CONDUCTION AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：外延基板，电子设备，使用的TRANS诗坛方向方向产生电流位置与过程的
公开(公告)号：EP2455964A1
公开(公告)日：2012-05-23
申请号：EP10799619.1
申请日：2010-07-13
申请人： DOWA Electronics Materials Co., Ltd.
发明人： IKUTA, Tetsuya , HINO, Daisuke , SAKAMOTO, Ryo , SHIBATA, Tomohiko
IPC分类号： H01L21/205 , H01L21/338 , H01L21/66 , H01L29/778 , H01L29/812
CPC分类号： H01L29/7787 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02658 , H01L22/14 , H01L29/155 , H01L29/2003 , H01L29/66462
摘要： To provide an epitaxial substrate for electronic devices, in which current flows in a lateral direction, which enables accurate measurement of the sheet resistance of HEMTs without contact, and to provide a method of efficiently producing the epitaxial substrate for electronic devices, the method characteristically includes the steps of forming a barrier layer against impurity diffusion on one surface of a high-resistance Si-single crystal substrate, forming a buffer as an insulating layer on the other surface of the high-resistance Si-single crystal substrate, producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate, and measuring resistance of the main laminate of the epitaxial substrate without contact.
摘要翻译：以提供外延衬底用于电子设备，其中电流在横向方向上，这使得无接触的HEMT的片电阻的精确测量流动，并提供高效率地制造电子器件的外延衬底的方法，该方法特征在于包括上形成高电阻Si-单晶衬底的一个表面上形成对杂质扩散阻挡层，在所述高电阻Si单晶衬底的另一个表面上的绝缘层形成一个缓冲如，在外延衬底的制造步骤通过外延生长在缓冲III族氮化物层上的多个，以形成主叠层，并测量外延衬底的主层压件的电阻而不接触。

39. 发明公开

EP2439594A1 Electrophotographic developer carrier core material, electrophotographic developer carrier, methods of manufacturing the same, and electrophotographic developer 有权
标题翻译：载体芯材的电子照相显影剂，电子照相显影剂用载体，其制备方法和电子照相显影剂的处理
公开(公告)号：EP2439594A1
公开(公告)日：2012-04-11
申请号：EP12000034.4
申请日：2006-09-25
申请人： DOWA IP Creation Co., Ltd. , DOWA Electronics Materials Co., Ltd.
发明人： Nakao, Ryusuke , Kawauchi, Takeshi
IPC分类号： G03G9/107 , G03G9/10 , G03G9/113
CPC分类号： G03G9/1075 , G03G9/10 , G03G9/1136
摘要： The present invention provides a carrier core material for use in the production of an electrophotographic developer which, even when applied, for example, to MFPs (multifunction printers), can realize stable, high-quality and high-speed development, and has a prolonged replacing life of magnetic carriers, and a method of manufacturing the same, a magnetic carrier including the carrier core material, and an electrophotographic developer manufactured from the magnetic carrier. An electrophotographic development carrier is prepared by adding resin particles, a binder, a dispersant, a wetting agent, and water to a raw material powder, wet pulverizing the mixture, drying the pulverized product to give granulated powder, calcinatng the granulated powder, and then sintering the granulated powder to prepare a carrier core material having an internally hollow structure, and coating the carrier core material with a resin. An electrophotographic developer is manufactured by mixing the electrophotographic development carrier with a toner.
摘要翻译：本发明提供的载体芯材料，在生产的电子照相显影剂其中，即使当应用于例如，至的MFP（多功能打印机），可实现稳定的高品质和高速发展的用途，并且具有延长的替换磁性载体的使用寿命，和制造方法，磁性载体包括载体芯材的方法，以及向电从磁性载体制造的照相显影剂。然后在电子照相显影载体是通过将树脂颗粒，粘合剂，分散剂，湿润剂和水到原料粉末制备，湿法粉碎该混合物，干燥所述粉碎的产物，得到粒化粉末，calcinatng的粒化粉末，以及烧结所述造粒粉末，以制备具有在内部中空结构的载体芯材，和用树脂涂覆载体芯材料。一种电子照相显影剂通过电子照相显影载体与调色剂混合来制造。

40. 发明公开

EP2432005A1 EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND PROCESS FOR PRODUCING SAME 审中-公开
标题翻译：香港特别行政区基地
公开(公告)号：EP2432005A1
公开(公告)日：2012-03-21
申请号：EP10774710.7
申请日：2010-05-10
申请人： DOWA Electronics Materials Co., Ltd.
发明人： IKUTA, Tetsuya , SHIMIZU, Jo , SHIBATA, Tomohiko , SAKAMOTO, Ryo , ITO, Tsuneo
IPC分类号： H01L21/338 , H01L21/205 , H01L29/778 , H01L29/812
CPC分类号： H01L29/207 , H01L21/02378 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L21/0254 , H01L29/1075 , H01L29/155 , H01L29/2003 , H01L29/7786
摘要： To provide an epitaxial substrate for electronic devices which can improve vertical breakdown voltage in a Group III nitride electronic device on a conductive SiC single crystal substrate, and to provide a method of producing the same.
The epitaxial substrate for an electronic device comprises a conductive SiC single crystal substrate, a buffer as an insulating layer on the SiC single crystal substrate, and a main laminate formed by epitaxially growing a plurality of Group III nitride layers on the buffer; and a lateral direction is a current flow direction. Further, the buffer includes at least an initial growth layer in contact with the SiC single crystal substrate and a superlattice laminate having a superlattice multi-layer structure on the initial growth layer. The initial growth layer is made of a B a1 Al b1 Ga c1 In d1 N (0 ≤ a 1 ≤ 1, 0 1 ≤ 1, 0 ≤ c 1 ≤ 1, 0 ≤ d 1 ≤ 1, a 1 + b 1 + c 1 + d 1 = 1) material. Furthermore, the superlattice laminate is configured by alternately stacking a first layer made of a B a2 Al b2 Ga c2 In d2 N (0 ≤ a 2 ≤ 1, 0 ≤ b 2 ≤ 1, 0 ≤ c 2 ≤ 1, 0 ≤ d 2 ≤ 1, a 2 + b 2 + c 2 + d 2 = 1) material and a second layer made of a B a3 Al b3 Ga c3 In d3 N (0 ≤ a 3 ≤ 1, 0 ≤ b 3 ≤ 1, 0 ≤ c 3 ≤ 1, 0 ≤ d 3 1, a 3 + b 3 + c 3 + d 3 = 1) material having a different band gap from the first layer. Characteristically, at least one of the superlattice laminate and a portion of the main laminate on the buffer side has a C concentration of 1 × 10 18 /cm 3 or more.
摘要翻译：为了提供能够改善导电SiC单晶衬底上的III族氮化物电子器件中的垂直击穿电压的电子器件的外延衬底，并提供其制造方法。用于电子器件的外延衬底包括导电SiC单晶衬底，在SiC单晶衬底上作为绝缘层的缓冲层，以及通过在缓冲器上外延生长多个III族氮化物层而形成的主层压体; 并且横向是电流流动方向。此外，缓冲器至少包括与SiC单晶衬底接触的初始生长层和在初始生长层上具有超晶格多层结构的超晶格层压体。初始生长层由B a1 Al b1 Ga c1 In d1 N（0‰¤a 1‰¤1，0

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