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21. 发明授权

EP2351378B1 RANDOM DELAY GENERATION FOR THIN-FILM TRANSISTOR BASED CIRCUITS 有权
公开(公告)号：EP2351378B1
公开(公告)日：2020-08-19
申请号：EP09829772.4
申请日：2009-11-24
申请人： Thin Film Electronics ASA
发明人： SUBRAMANIAN, Vivek , MAO, Mingming , WANG, Zhigang
IPC分类号： H04Q5/22 , H03K3/033 , H03K3/355 , H03K3/03 , G06K7/00 , G06K7/10 , G06K19/07 , H01L21/66 , H03B5/12 , H03K5/13 , H04B1/04 , H04H20/16

22. 发明公开

EP3591839A1 AMPLITUDE CALIBRATED OSCILLATOR DEVICE 有权
公开(公告)号：EP3591839A1
公开(公告)日：2020-01-08
申请号：EP18182245.3
申请日：2018-07-06
申请人： Stichting IMEC Nederland
发明人： WANG, XiaoYan , SALIMI, Kia
IPC分类号： H03B5/12
摘要： The present invention relates to an oscillator device (100) comprising
- an oscillation circuit (10) arranged for generating and outputting an oscillation signal (Vout) and comprising an active circuit (12) to ensure oscillation is maintained,
- a voltage-to-current conversion replica circuit (21) of the active circuit arranged for receiving the oscillation signal (Vout) and for outputting a current (Isub) proportional to the oscillation signal,
- biasing means (22) arranged to generate a constant bias current (Iref) to activate the oscillation circuit,
- subtraction means (23) for subtracting the current (Isub) proportional to the oscillation signal from the bias current, thereby obtaining a resulting current (Itail) which can be used for adapting the oscillation signal's amplitude.

23. 发明授权

EP3340460B1 AMPLITUDE-LIMIT OSCILLATION CIRCUIT 有权
公开(公告)号：EP3340460B1
公开(公告)日：2019-12-11
申请号：EP16910785.1
申请日：2016-10-25
申请人： Shenzhen Goodix Technology Co., Ltd.
发明人： ZHANG, Mengwen
IPC分类号： H03B5/12 , H03B5/36

24. 发明授权

EP3139496B1 CAPACITOR ARRANGEMENT FOR OSCILLATOR 有权
公开(公告)号：EP3139496B1
公开(公告)日：2019-10-16
申请号：EP16184954.2
申请日：2016-08-19
申请人： NXP B.V.
发明人： Leong, Frank , Gao, Yuan , Staszewski, Robert Bogdan
IPC分类号： H03B5/06 , H03B5/12 , H03L3/00 , H03J3/20 , H03J7/00

25. 发明公开

EP3523877A1 SWITCHED CAPACITOR ARRANGEMENT FOR TUNING A DIFFERENTIAL CIRCUIT 有权转让
公开(公告)号：EP3523877A1
公开(公告)日：2019-08-14
申请号：EP16778804.1
申请日：2016-10-07
申请人： Telefonaktiebolaget LM Ericsson (PUBL)
发明人： SJÖLAND, Henrik , SANDSTRÖM, Torbjörn
IPC分类号： H03B5/12
摘要： A switched capacitor arrangement for tuning a differential circuit is disclosed. The switched capacitor arrangement comprises a first node, a second node and a third node. The switched capacitor arrangement further comprises a first capacitor coupled between the first node and the second node, a second capacitor coupled between the second node and the third node, and a first switch branch comprising a first switch coupled between the second node and a signal ground node. The first switch has an on state and an off state. The first node and third node are configured to be connected to respective differential nodes of the differential circuit. The switched capacitor arrangement is configured to tune the differential circuit by controlling the state of the first switch.

26. 发明公开

EP3514828A1 SEMICONDUCTOR INTEGRATED CIRCUITRY 有权
公开(公告)号：EP3514828A1
公开(公告)日：2019-07-24
申请号：EP18152590.8
申请日：2018-01-19
申请人： Socionext Inc.
发明人： GERMANN, Bernd Hans , MANTHENA, Vamshi Krishna
IPC分类号： H01L23/522 , H01L23/528 , H03B5/12
摘要： Semiconductor integrated circuitry, having a layered structure formed on a substrate, the layered structure comprising a plurality of metal layers and via layers sandwiched between adjacent said metal layers, an upwards direction being defined through the layers away from the substrate, wherein: a capacitor is formed from metal structures implemented in at least first, second and third metal layers ordered in the upwards direction; the metal structures comprise arrangements of strips having widths parallel to the layers, the widths being within one of three ranges of widths, the ranges comprising a lower range of widths, an intermediate range of widths comprising widths larger than those in the lower range of widths, and a higher range of widths comprising widths larger than those in the intermediate range of widths; the strips formed in the first layer are organised into at least one first comb arrangement having a base strip and a plurality of finger strips extending from the base strip, the widths of the strips formed in the first layer being in the lower range of widths; the strips formed in the second layer are organised into at least one second comb arrangement having a base strip and a plurality of finger strips extending from the base strip, the widths of the finger strips formed in the second layer being in the lower range of widths, and the width of each base strip formed in the second layer being in the intermediate range of widths; and the strips formed in the third layer have widths in the higher range of widths.

27. 发明授权

EP1886403B1 TUNABLE OSCILLATOR HAVING SERIES AND PARALLEL TUNED RESONANT CIRCUITS 有权
公开(公告)号：EP1886403B1
公开(公告)日：2018-12-26
申请号：EP06760164.1
申请日：2006-05-19
申请人： Synergy Microwave Corporation
发明人： ROHDE, Ulrich L. , PODDAR, Ajay Kumar , SCHOEPF, Klaus Juergen , REBEL, Reimund , ZHANG, Hua
IPC分类号： H03B5/12 , H03B5/18
CPC分类号： H03B5/1841 , H03B5/04 , H03B5/1203 , H03B5/1231 , H03B5/1243 , H03B5/1847 , H03B2200/0062
摘要： A voltage controlled oscillator compising a distributed coupled resonator (DCR) that desirably produces a low noise signal source with reduced phase hits in comparison to a high Q resonator, such as a ceramic and SAW (Surface Acoustic Wave) resonator based oscillator.

28. 发明授权

EP2005572B1 OSZILLATOR MIT MITGEFÜHRTEM VERSTÄRKER 有权
公开(公告)号：EP2005572B1
公开(公告)日：2018-10-10
申请号：EP07722886.4
申请日：2007-02-21
申请人： Rohde & Schwarz GmbH & Co. KG
发明人： KAHMEN, Gerhard
IPC分类号： H03B5/12
CPC分类号： H03B5/1231 , H03B5/1203 , H03B5/1243 , H03B2200/0048 , H03B2200/005 , H03B2200/0052 , H03B2201/033

29. 发明公开

EP3319229A3 DUAL-MODE OSCILLATOR AND MULTI-PHASE OSCILLATOR 审中-公开
公开(公告)号：EP3319229A3
公开(公告)日：2018-08-08
申请号：EP17191767.7
申请日：2017-09-19
申请人： HUAWEI TECHNOLOGIES CO., LTD.
发明人： SHU, Yiyang , QIAN, Huizhen , LUO, Xun
IPC分类号： H03B5/12 , H03B27/00
CPC分类号： H03B5/02 , H03B5/1212 , H03B5/1218 , H03B5/1228 , H03B5/1243 , H03B5/1265 , H03B5/1296 , H03B27/00 , H03B2200/0074 , H03B2200/009 , H03B2201/0266
摘要： Embodiments of this application disclose a dual-mode oscillator and a multi-phase oscillator. In the dual-mode oscillator, switching between two operating modes is implemented by using a mode switching circuit, so that oscillation signals having two different bands can be obtained. Moreover, the dual-mode oscillator includes two transformer-coupled oscillators, and a step-up transformer in any transformer-coupled oscillator multiplies a drain voltage swing of a first MOS transistor and then injects a voltage signal to a gate of a second MOS transistor, so that a larger gate voltage swing is obtained without increasing a supply voltage of the oscillator, and phase noise performance of the dual-mode oscillator is improved. In the multi-phase oscillator, multiple dual-mode transformer-coupled oscillators are connected through multi-phase coupled circuits to form a Mobius loop, so that oscillation signals in multiple phases can be generated, and phase noise performance of the entire oscillator can be improved.

30. 发明授权

EP2441168B1 CAPACITOR SWITCHING CIRCUIT 有权
公开(公告)号：EP2441168B1
公开(公告)日：2018-07-18
申请号：EP10726386.5
申请日：2010-06-09
申请人： QUALCOMM Incorporated
发明人： RANGARAJAN, Rajagopalan , MISHRA, Chinmaya
IPC分类号： H03B5/12
CPC分类号： H03B5/1206 , H03B5/1265 , H03J2200/10
摘要： A capacitance switching element includes first and second capacitors connected in series by transistors. The gates of the transistors are biased by a first signal through one set of resistors, and the sources and drains are biased by a second signal through a second set of resistors. The signals are level-shifted and may be complimentary. To turn the element ON, the first signal may be set to VDD and the second signal may be set to zero. To turn the element OFF, the first signal may be set to a multiple of VDD/2 and the second signal may be set to the multiple plus one of VDD/2. When the element is used in an oscillator tuning circuit, the voltage stress on the transistors is reduced and the transistors may be fabricated with thin oxide. The oscillator may be used in a transceiver of a cellular access terminal.

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