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    • 22. 发明公开
    • ELECTRODE FOR ELECTROSTATIC TRANSDUCER AND METHODS OF MANUFACTURE.
    • 电极,电网静止变流器及其处理工艺。
    • EP0147432A4
    • 1986-06-05
    • EP84902282
    • 1984-05-22
    • BEVERIDGE HAROLD NORMAN
    • BEVERIDGE HAROLD NORMAN
    • H04R19/00H01G7/02H04R19/02B23B7/14B23B31/00B44C1/22C23F1/02
    • H04R19/02Y10T29/49005
    • Electrodes, electrostatic transducers employing the electrodes, and methods of making the electrodes and the electrostatic transducers. Sparking from conventional electrodes, which occurs in the air gap, causes serious damage to thin film diaphragms. Such electrodes are therefore surrounded by dielectrics having a volume resistivity of 10 to 10 ohm cm. But, the volume resistivity at such a high level causes the charge transfer deposits on the dielectric surface to remain there for some time which reduces the polarizing voltage and the audio output with concurrent sound distortion. An electrode (13) according to the present invention has a nonconductive substrate (15) and a conductive layer (16) having a first plurality of holes (18) applied to the substrate and then coated with a dielectric layer (20) wherein the dielectric layer has a relatively low resistivity (e.g. 10 ohm cm). A second and third plurality of holes (700, 710), concentric with but of smaller diameter than the first plurality of holes (18), are formed through the dielectric layer (20) and the nonconductive substrate (15), thereby providing a recess spacing (19) between the conductive layer holes (18) and the holes (700, 710). In one embodiment of an electrostatic transducer (11), two electrodes (13) are spaced from a diaphragm (12) positioned therebetween. An electrostatic transducer (40) having multiple diaphragms (12, 21) is made by incorporating two types of electrodes (13, 28). One type of electrode (13) has one side of a nonconductive substrate (15) coated with a conductor (16) and a dielectric layer (20). The other type of electrode (28) has two sides of a nonconductive substrate (17) coated with a conductive layer (60, 61) and then with a dielectric layer (100, 101).
    • 23. 发明公开
    • IMPROVED STEP-UP CIRCUIT FOR DRIVING FULL-RANGE-ELEMENT ELECTROSTATIC LOUDSPEAKERS
    • 改进UP变换电路,用于控制静电式扬声器宽带元素。
    • EP0057215A1
    • 1982-08-11
    • EP81902229.0
    • 1981-08-10
    • STRICKLAND, James C.
    • STRICKLAND, James C.
    • H04R3H04R19
    • H04R19/02H04R3/06
    • Dans le domaine technique de la reproduction sonore au moyen de haut-parleurs electrostatiques a large bande passante on rencontre des problemes dans le circuit d'attaque. Le circuit d'attaque decrit permet d'eliminer les inconvenients que presentent les amplificateurs de l'art anterieur concus specialement, du type a transformateur elevateur, et de rendre les haut-parleurs electrostatiques plus competitifs du point de vue acoustique et economique. Les problemes resolus sont les suivants: obtenir une caracteristique egalisee de passage complementaire a la charge capacitive et a la resistance de radiation changeant radicalement sur toute la gamme audible-signaux sonores d'attaque precis a haute tension, d'un rendement eleve - acoustiquement "plat" (transitions douces d'amplitude, de phase et d'impedance), adaptation appropriee de l'impedance entre les amplificateurs conventionnels possedant une faible impedance et une faible tension d'entree et les haut-parleurs, un prix modere, un poids reduit et un encombrement limite. Le circuit d'attaque utilise deux transformateurs audio specialement concus (T1, T2) en liaison parallele-bilaterale comprenant des reseaux RC (R2, R3, C2, C3). Afin d'assurer une reponse optimale un transformateur (T1) travaille dans une plage de frequence allant de 30Hz a environ 5kHz, et l'autre transformateur (T2) possedant une impedance d'entree cooperative ajoutee (R1-C1) travaille dans une plage allant de quelques centaines de Hz jusqu'a 20kHz. Une conservation d'energie a resonance aux hautes frequences est utilisee.
    • 24. 发明公开
    • SPEAKER DEVICE
    • EP4436210A1
    • 2024-09-25
    • EP23163803.2
    • 2023-03-23
    • Infineon Technologies AG
    • BRETTHAUER, Christian
    • H04R17/00H04R19/00H04R19/02
    • H04R17/00H04R2217/0320130101H04R19/005H04R2201/00320130101H04R19/02G10K15/04
    • A speaker device (100) and a multi-way speaker device (90) are presented. The speaker device (100) comprises a housing (10) having an acoustic aperture (12), a transducer element (20) in the housing (10) configured to receive a first actuation signal (S1) and to generate an acoustic output signal (SOUT) in response to the first actuation signal (S1). The speaker device comprises a shutter element (30) in the housing (10) configured to receive a second actuation signal (S2), wherein the shutter element (30) is arranged laterally offset to the transducer element (20) in the housing (10), and wherein the shutter element (30) is arranged in an acoustic path (32) between the transducer element (20) and the acoustic aperture (12) and comprises a movable shutter portion (34), which is movable in opposite directions in response to the second actuation signal (S2). The speaker device (100) further comprises a controller (40) configured to provide the first actuation signal (S1) to the transducer element (20), wherein the first actuation signal (S1) has an ultrasonic signal component which is modulated with an audio signal component, and to provide the second actuation signal (S2) to the shutter element (30), wherein the second actuation signal (S2) has half the frequency of the ultrasonic signal component.