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    • 29. 发明公开
    • SEMICONDUCTOR LIGHT-EMITTING DEVICE
    • 半导体发光器件
    • EP3010048A1
    • 2016-04-20
    • EP14811003.4
    • 2014-06-02
    • Asahi Kasei E-Materials Corporation
    • YAMAGUCHI, FujitoSHIROKURA, Nao
    • H01L33/22H01L33/50
    • H01L33/50H01L33/22H01L33/24H01L33/504H01L2933/0083
    • A semiconductor light emitting apparatus comprised of a semiconductor light emitting device (100) having a layered semiconductor layer (110) configured by layering at least two or more semiconductor layers (103), (105) and a light emitting layer (104) to emit first light, and a wavelength conversion member that covers at least a part of the semiconductor light emitting device (100), absorbs at least a part of the first light and that emits second light with a wavelength different from that of the first light, characterized in that the semiconductor light emitting device (100) is provided with a fine structure layer, as a component, including dots comprised of a plurality of convex portions or concave portions extending in the out-of-plane direction on one of main surfaces forming the semiconductor light emitting device (100), the fine structure layer forms a two-dimensional photonic crystal (102) controlled by at least one of a pitch among the dots, a dot diameter and a dot height, and that the two-dimensional photonic crystal (102) has at least two or more periods each of 1 µm or more.
    • 一种半导体发光装置,包括:半导体发光装置(100),具有通过层叠至少两个以上的半导体层(103),(105)和发光层(104)而构成的层状半导体层(110) 第一光和覆盖半导体发光器件(100)的至少一部分的波长转换构件吸收第一光的至少一部分并且发射具有不同于第一光的波长的第二光的第二光,其特征在于, 其中半导体发光器件(100)设置有精细结构层作为构件,所述精细结构层包括由多个凸起部分或凹陷部分构成的点,所述凸起部分或凹陷部分在面外方向上在形成 半导体发光器件(100)中,精细结构层形成由点之间的间距,点直径和点高度中的至少一个控制的二维光子晶体(102),以及 二维光子晶体(102)具有至少两个或更多个每个1μm或更多的周期。