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11. 发明授权

EP0852843B1 HOHLLEITEROSZILLATOR 失效
标题翻译：波导OSC
公开(公告)号：EP0852843B1
公开(公告)日：1999-06-09
申请号：EP96931795.7
申请日：1996-09-12
申请人： Daimler-Benz Aerospace Aktiengesellschaft
发明人： RUST, Stefan
IPC分类号： H03B9/14
CPC分类号： H03B9/145 , H03B9/14 , H03B2009/126
摘要： The aim of the invention is to provide an economical waveguide oscillator by means of which carrier waves can be generated in a waveguide. This aim is achieved in that the waveguide oscillator takes the form of a planar slotted guide structure (2) arranged in the waveguide (1) approximately perpendicularly to the longitudinal axis of the waveguide and has two transmission slotted guides (4, 5), at least one semiconductor oscillator (3, 18) and at least one compensating slotted guide (6, 7).

12. 发明公开

EP0700114A3 High-frequency integrated circuit 失效
标题翻译：用于微波集成电路
公开(公告)号：EP0700114A3
公开(公告)日：1997-04-02
申请号：EP95113571.4
申请日：1995-08-29
申请人： MURATA MANUFACTURING CO., LTD.
发明人： Ishikawa, Youhei , Tanizaki, Toru , Nishida, Niroshi
IPC分类号： H01P3/16 , G01S7/03 , H01P1/383 , H03B9/14
CPC分类号： H01P3/165 , G01S7/032 , H03B9/14
摘要： A high-frequency integrated circuit which operates in a microwave band or in a millimeter wave band. The high-frequency integrated circuit has devices with a nonradiative dielectric waveguide such as an oscillator, a circulator, etc., and a mount case with a nonradiative dielectric waveguide in which these devices are mounted. Each of the devices with a nonradiative dielectric waveguide has a couple of conductors, a dielectric strip which is disposed between the conductors and propagates a high-frequency electromagnetic wave in a specified mode, a mounting surface which is formed on one of the conductors, and an end surface which is formed on an end of the conductors so as to be vertical to a traveling direction of the electromagnetic wave propagated in the dielectric strip and on which an end of the dielectric strip is exposed. The devices with a nonradiative dielectric waveguide are evaluated separately, and thereafter, the devices are mounted in the mount case individually.

13. 发明公开

EP0700113A3 Device with a nonradiative dielectric waveguide 失效
标题翻译：设备包含非辐射介质微波波导
公开(公告)号：EP0700113A3
公开(公告)日：1997-04-02
申请号：EP95113569.8
申请日：1995-08-29
申请人： MURATA MANUFACTURING CO., LTD.
发明人： Ishikawa, Youhei , Tanizaki, Toru , Nishida, Hiroshi
IPC分类号： H01P3/16 , G01S7/03 , H01P1/383 , H03B9/14
CPC分类号： H01P3/165 , G01S7/352 , G01S13/34 , H01P1/04 , H01P1/383 , H03B9/14
摘要： A device with a nonradiative dielectric waveguide which operates in a microwave band or in a millimeter wave band. The device with a nonradiative dielectric waveguide is, for example, an oscillator, a circulator, a coupler or the like. The device has a couple of parallel conductors, a dielectric strip which is disposed between the conductors and propagates a high-frequency electromagnetic wave in a specified mode, a mounting surface which is formed on one of the conductors, and an end surface which is formed on an end of the conductors so as to be vertical to a traveling direction of the electromagnetic wave propagated in the dielectric strip and on which an end of the dielectric strip is exposed.

14. 发明公开

EP0322062A1 Radar à compression d'impulsions et application à la cartographie ou à la météorologie 失效
标题翻译： Radar mit Impulskompression und Anwendung in der Kartographie oder in der Meteorologie。
公开(公告)号：EP0322062A1
公开(公告)日：1989-06-28
申请号：EP88202947.3
申请日：1988-12-19
申请人： Philips Electronics N.V.
发明人： Zilliox, Jean-Marie Société Civile S.P.I.D.
IPC分类号： G01S13/28 , G01S7/28 , H03B9/14
CPC分类号： H03B9/14 , G01S7/282 , G01S13/28 , H03B2009/126 , H03B2200/0074
摘要： Le radar, du type à modulation quasi-linéaire de la fréquence du signal émis pendant l'impulsion, comporte une chaîne d'émission munie d'un oscillateur à haute fréquence (29), une antenne émettrice-réceptrice (7) et une chaîne de réception munie d'un organe de compression d'impulsions (33). Selon l'invention, dans la chaîne d'émission, une diode Impatt (17) d'un combineur à une diode (16) engendre directement en hyperfréquence un signal de synchronisation de l'oscillateur (impulsions modulées selon des rampes négatives de fréquence). A cet effet, un générateur d'horloge (26) commande en conduction, pour chaque impulsion à émettre, un interrupteur (25) disposé en série sur le conducteur (19) d'alimentation à courant sensiblement constant de la diode Impatt (17).
Application à la cartographie ou à la météorologie.
摘要翻译：雷达是在脉冲期间传输的信号具有准线性频率调制的类型。它包括具有高频振荡器（29），发射接收天线（7）和具有脉冲压缩系统（33）的接收电路的发射电路。传输电路中的一个二极管加法器（16）的IMPATT二极管（17）直接产生用于振荡器的微波同步信号（根据负频率斜坡调制的脉冲）。为了实现这一点，时钟发生器（26）通过串联连接在导通线（19）上的开关（25）来控制每个待传输的脉冲的导通，从而向IMPATT二极管（17）提供基本恒定的电流。 ... 在制图或气象学中的应用。 ... ...

15. 发明授权

EP1388901B1 Structure for assembly of a Gunn diode 有权
标题翻译： Struktur zur Zusammensetzung einer Gunn Diode
公开(公告)号：EP1388901B1
公开(公告)日：2013-10-30
申请号：EP03025203.5
申请日：1999-04-27
申请人： New Japan Radio Co., Ltd.
发明人： Nakagawa, Atsushi , Watanabe, Kenichi
IPC分类号： H01L47/02 , H03B7/14 , H03B9/14
CPC分类号： H01L47/026 , H01L2224/48091 , H01L2224/73257 , H03B7/14 , H03B9/14 , H03B9/147 , H01L2924/00014

16. 发明授权

EP1388902B1 Fabricating method of Gunn diode 有权
标题翻译：对于耿氏制造工艺
公开(公告)号：EP1388902B1
公开(公告)日：2013-06-19
申请号：EP03025205.0
申请日：1999-04-27
申请人： New Japan Radio Co., Ltd.
发明人： Nakagawa, Atsushi , Watanabe, Kenichi
IPC分类号： H01L47/02 , H03B7/14 , H03B9/14
CPC分类号： H01L47/026 , H01L2224/48091 , H01L2224/73257 , H03B7/14 , H03B9/14 , H03B9/147 , H01L2924/00014

17. 发明公开

EP1388902A3 Fabricating method of Gunn diode 有权
标题翻译： HerstellungsverfahrenfürGunndiode
公开(公告)号：EP1388902A3
公开(公告)日：2005-12-07
申请号：EP03025205.0
申请日：1999-04-27
申请人： New Japan Radio Corp., Ltd.
发明人： Nakagawa, Atsushi , Watanabe, Kenichi
IPC分类号： H01L47/02 , H03B7/14 , H03B9/14
CPC分类号： H01L47/026 , H01L2224/48091 , H01L2224/73257 , H03B7/14 , H03B9/14 , H03B9/147 , H01L2924/00014
摘要： A fabricating method for a Gunn diode comprising a first step of sequentially laminating and forming a first semiconductor layer which serves as a first contact layer, an active layer, and a second semiconductor layer which serves as a second contact layer onto a semiconductor substrate, a second step of forming first and second electrodes of specified shapes onto the second contact layer, and a third step of removing the second semiconductor layer and the active layer through dry etching wherein the first and second electrodes are used as masks.
摘要翻译： NRD指南Gunn振荡器，其通过将两个平行的金属板放置在不超过使用频率的自由空间波长的一半的距离处，并且将夹持介于平行板之间的介质带状线的NRD引导电路与耿氏二极管，其中所述NRD导向耿氏振荡器包括绝缘或半绝缘材料的板基板，其上形成有与信号线连接的信号电极和相对于信号电极绝缘的接地电极，耿氏二极管形成有在同一平面上的阳极电极和阴极电极，其中一个电极连接到板基板的信号电极，另一个连接到接地电极，以及散热片，用于支撑板基板的后表面相对于平行板之一，并且其中板基板的信号线的尖端与电介质电磁组合 ic带线。

18. 发明公开

EP1446824A2 INTEGRIRERTES HALBLEITERBAUELEMENT FUR HOCHFREQUENZMESSUNGEN UND DESSEN VERWENDUNG 审中-公开
标题翻译： INTEGRIRERTES半导体部件进行高频测量及其用途
公开(公告)号：EP1446824A2
公开(公告)日：2004-08-18
申请号：EP02754529.2
申请日：2002-08-16
申请人： ROBERT BOSCH GMBH
发明人： SCHMIDT, Ewald , PFIZENMAIER, Heinz , IRION, Hans , HASCH, Juergen
IPC分类号： H01L21/00
CPC分类号： H03B9/14 , G01S7/032 , H01L23/66 , H01L29/864 , H01L2224/16145 , H01L2924/01068 , H01L2924/12032 , H01Q9/0435 , H01Q19/062 , H01Q23/00 , H03B9/147 , H01L2924/00
摘要： The invention relates to an integrated semiconductor component for conducting high-frequency measurements and to the use thereof. According to the invention, the semiconductor component is part of a semiconductor circuit (10) (SOI wafer), comprised of a first silicon layer (12), of a silicon oxide layer (insulating layer (14)) connected thereto, and of a subsequent additional silicon layer (structural layer (16)). The semiconductor component is comprised of an IMPATT oscillator (30) provided with a resonator (24), which contains a metallized silicon cylinder (18) mounted in the structural layer (16), a coupling disk (28) that covers the cylinder (18) in the area of the first layer (12), and an IMPATT diode (32) that is connected to the cylinder (18) of the resonator (24) via a recess (38) of the coupling disk (28). The semiconductor component is also comprised of a reference oscillator (46) of a lower frequency provided with a resonator (24), which contains a metallized silicon cylinder (18) mounted in the structural layer (16), a coupling disk (28) that covers the cylinder in the area of the first layer (12), and a microwave conductor that is connected to the cylinder (18) of the resonator (24) via a recess (38) of the coupling disk (28). The reference oscillator serves to stabilize the frequency of the IMPATT oscillator (30) via an active oscillator circuit (58). The semiconductor component additionally comprises a receive mixer provided with integrated Schottky diodes and comprises a transmitting/receiving antenna.

19. 发明授权

EP0700114B1 High-frequency integrated circuit 失效
标题翻译：用于微波集成电路
公开(公告)号：EP0700114B1
公开(公告)日：2001-03-21
申请号：EP95113571.4
申请日：1995-08-29
申请人： MURATA MANUFACTURING CO., LTD.
发明人： Ishikawa, Youhei , Tanizaki, Toru , Nishida, Niroshi
IPC分类号： H01P3/16 , G01S7/03 , H01P1/383 , H03B9/14
CPC分类号： H01P3/165 , G01S7/032 , H03B9/14

20. 发明公开

EP0954039A1 Gunn diode, NRD guide gunn oscillator and fabricating method 有权
标题翻译： Gunndiode，NRD Leitungsschaltung和Verfahren zur Herstellung
公开(公告)号：EP0954039A1
公开(公告)日：1999-11-03
申请号：EP99108231.4
申请日：1999-04-27
申请人： New Japan Radio Corp., Ltd.
发明人： Atsushi, Nakagawa, c/o New Japan Radio Co., Ltd. , Kenichi, Watanabe, c/o New Japan Radio Co., Ltd.
IPC分类号： H01L47/02 , H03B7/14 , H03B9/14
CPC分类号： H01L47/026 , H01L2224/48091 , H01L2224/73257 , H03B7/14 , H03B9/14 , H03B9/147 , H01L2924/00014
摘要： A Gunn diode which is formed by sequentially laminating a first semiconductor layer, an active layer and a second semiconductor layer onto a semiconductor substrate. The Gunn diode comprises first and second electrodes arranged on the second semiconductor layer for impressing voltage on the active layer, and a concave portion which is cut from around the first electrode in a direction of the second semiconductor layer and the active layer and which subdivides the second semiconductor layer and the active layer to which the first electrode is connected as a region which functions as a Gunn diode. Since etching for defining a region that is to function as a Gunn diode is performed by self-alignment dry etching utilizing electrode layers formed above this region as masks, variations in characteristics are restricted. There are also disclosed a NRD guide Gunn oscillator attached to the NRD guide for obtaining a high frequency oscillation output of the Gunn diode, a fabricating method of the Gunn diode, and a structure for assembly of the Gunn diode.
摘要翻译：耿氏二极管，其通过将第一半导体层，有源层和第二半导体层依次层叠到半导体衬底上而形成。耿氏二极管包括布置在第二半导体层上的用于在有源层上施加电压的第一和第二电极，以及在第二半导体层和有源层的方向上从第一电极周围切割的凹部，第二半导体层和第一电极连接的有源层作为用作耿氏二极管的区域。由于用于限定用作耿氏二极管的区域的蚀刻是通过利用在该区域上形成的电极层作为掩模的自对准干法蚀刻进行的，特性的变化受到限制。还公开了一种NRD指南Gunn振荡器，其连接到NRD指南，用于获得耿氏二极管的高频振荡输出，耿氏二极管的制造方法以及用于组装耿氏二极管的结构。

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