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    • 11. 发明公开
    • IRREVERSIBLE CIRCUIT ELEMENT, ITS MANUFACTURING METHOD AND COMMUNICATION APPARATUS
    • 不可逆转的律师事务所,赫尔辛基大学
    • EP1939973A1
    • 2008-07-02
    • EP06810932.1
    • 2006-09-29
    • MURATA MANUFACTURING CO., LTD.
    • KAWANAMI, Takashi
    • H01P1/36H01P1/365
    • H01P1/36H01P1/32
    • A non-reciprocal circuit element is equipped with a ferrite-magnet assembly which includes a pair of permanent magnets and a ferrite(32) sandwiched between the permanent magnets. A first center electrode(35) and a second center electrode(36) defined by conducting films are provided on principal surfaces(32a, 32b) of the ferrite(32), such that the first center electrode(35) and the second center electrode(36) are insulated from each other and intersect each other. The permanent magnets have principal surfaces having substantially the same shape as the principal surfaces(32a, 32b) of the ferrite(32). The ferrite(32) has upper and lower surfaces(32c, 32d) provided with recesses. The recesses have a conductor material embedded therein, whereby intermediate electrodes(35a, 36b, 36f, 36j, 36m, 36d, 36h, 361) and connector electrodes(35b, 35c, 36p) are provided.
    • 不可逆电路元件配备有铁氧体 - 磁体组件,其包括一对永磁体和夹在永磁体之间的铁氧体(32)。 在铁氧体(32)的主表面(32a,32b)上设置由导电膜限定的第一中心电极(35)和第二中心电极(36),使得第一中心电极(35)和第二中心电极 (36)彼此绝缘并且彼此相交。 永磁体具有与铁氧体(32)的主表面(32a,32b)基本相同形状的主表面。 铁氧体32具有设置有凹部的上下表面32c,32d。 凹部具有嵌入其中的导体材料,由此提供中间电极(35a,36b,36f,36j,36m,36d,36h,361)和连接器电极(35b,35c,36p)。
    • 15. 发明公开
    • (M+1)-FOR-M FERRITE REDUNDANCY SWITCH AND SWITCH SYSTEM
    • (M + 1)-FOR-M-FERRIT-REDUNDANZSCHALTER UND SCHALTSYSTEM
    • EP3086402A1
    • 2016-10-26
    • EP16165869.5
    • 2016-04-18
    • Honeywell International Inc.
    • KROENING, Adam M.
    • H01P1/39H01P5/16H03F1/52H04B1/74
    • H01P1/11H01P1/32H01P1/39H03F1/526H03F3/58H03F2200/294H04B1/74
    • An (M+1)-for-M redundant switch, where M is an integer greater than 1, is provided. The (M+1)-for-M redundant switch includes a first switch-triad-assembly including a first switching element circulator and two element isolators; a second switch-triad-assembly including a second switching element circulator and two element isolators and; and at least one inverted-switch-triad-assembly including a third switching element circulator and two element isolators. One of the element isolators of the first switch-triad-assembly is arranged to couple power with one of the two element isolators of one of the at least one inverted-switch-triad-assembly. One of the element isolators of the second switch-triad-assembly is arranged to couple power with another one of the two element isolators of one of the at least one inverted-switch-triad-assembly.
    • 提供了M(M + 1)-for-M冗余开关,其中M是大于1的整数。 (M + 1)-for-M冗余开关包括包括第一开关元件循环器和两个元件隔离器的第一开关三单元组件; 包括第二开关元件循环器和两个元件隔离器的第二开关三单元组件; 以及包括第三开关元件循环器和两个元件隔离器的至少一个反向开关三单元组件。 第一开关三单元组件的元件隔离器中的一个被布置成将功率与至少一个反相开关三单元组件中的一个的两个元件隔离器中的一个耦合。 第二开关 - 三单元组件的元件隔离器之一被布置成将功率与至少一个反相开关三单元组件中的一个的两个元件隔离器中的另一个耦合。
    • 19. 发明公开
    • High-frequency use non-reciprocal circuit element
    • 高频使用不可逆电路元件
    • EP0653799A3
    • 1995-12-20
    • EP94115665.5
    • 1994-10-05
    • MURATA MANUFACTURING CO., LTD.
    • Marusawa,HiroshiKawanami,TakashiKonoike,TakehiroTomono,Kunisaburo
    • H01P1/32H01P1/387
    • H01P1/32
    • A high-frequency use non-reciprocal circuit includes a sintered body (18) which is a high-frequency use magnetic body obtained by a ceramic lamination/integral firing technique, a plurality of central electrodes (8a, 8b to 10a, 10b) which are arranged in the sintered body (18) to be separated from each other through a magnetic layer while intersecting with each other at central portions, and electrodes (11a to 16b) for deriving impedance-matching capacitance which are formed in the vicinity of the intersecting portion to be in series with the central electrodes (8a, 8b to 10a, 10b). The magnetic layer provided between the central electrodes serves as an insulating layer for electrically insulating the central electrodes from each other, a high-frequency use magnetic layer, and a material layer for deriving the impedance-matching capacitance.
    • 高频用不可逆电路包括:作为通过陶瓷层叠/一体烧成技术得到的高频用途磁体的烧结体(18);多个中心电极(8a,8b〜10a,10b) 配置在烧结体(18)内,通过磁性层在中央部相互交叉而相互分离;以及电极(11a〜16b),其用于导出形成于交叉部附近的阻抗匹配电容 部分与中心电极(8a,8b至10a,10b)串联。 设置在中心电极之间的磁性层用作使中心电极彼此电绝缘的绝缘层,高频使用磁性层和用于导出阻抗匹配电容的材料层。