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11. 发明授权

EP3125300B1 SOLAR CELL AND SOLAR CELL MODULE USING SAME 有权
公开(公告)号：EP3125300B1
公开(公告)日：2018-12-12
申请号：EP15768486.1
申请日：2015-02-23
申请人： KYOCERA Corporation
发明人： ARIMA, Takahiro , ITO, Norikazu , HONMA, Takemichi
IPC分类号： H01L31/0224 , H01L31/05
CPC分类号： H01L31/02167 , H01L31/022425 , H01L31/048 , H01L31/0504 , Y02E10/50
摘要： A solar cell (16) is provided with: a semiconductor substrate (2) having a main surface; a plurality of first electrodes (7) disposed so as to be aligned in one direction on the main surface of the semiconductor substrate (2), the first electrodes (7) having obverse and side surfaces; a passivation layer (6) disposed on the main surface of the semiconductor substrate (2) and positioned in the gaps between the first electrodes; a conductive adhesive disposed on the obverse surfaces of the first electrodes (7); and lead members (15) connected to adjacent first electrodes (7) by the conductive adhesive so as to straddle the passivation layer (6). The solar cell (16) is further provided with contact members (12), the contact members (12) being positioned in gaps (11), being disposed on the obverse surface of the passivation layer (6) or the main surface of the semiconductor substrate (2) in alignment with the passivation layer (6) in one direction, and being in contact with parts of the lead members (15) from underneath.

12. 发明授权

EP2745329B1 PHOTOVOLTAIC DEVICE 有权
公开(公告)号：EP2745329B1
公开(公告)日：2018-09-19
申请号：EP12750801.8
申请日：2012-08-14
申请人： IQE Plc.
发明人： JOHNSON, Dr Andrew
IPC分类号： H01L31/0328 , H01L31/0687 , H01L31/0725
CPC分类号： H01L31/0328 , H01L29/16 , H01L29/20 , H01L29/267 , H01L31/02167 , H01L31/03044 , H01L31/068 , H01L31/0687 , H01L31/06875 , H01L31/0725 , H01L31/0735 , H01L31/074 , H01L31/1812 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A photovoltaic device comprises an interface (8) between a layer of Group III-V material (3) and a layer of Group IV material (1) with a thin silicon diffusion barrier (6) provided at or near the interface. The silicon barrier controls the diffusion of Group V atoms into the Group IV material, which is doped n-type thereby. The n-type doped region can provide the p-n junction of a solar cell in the Group IV material with superior solar cell properties. It can also provide a tunnel diode in contact with a p-type region of the III-V material, which tunnel diode is also useful in solar cells. In another aspect, a multijunction photovoltaic device is provided in which there are at least a first light-absorbing layer (111) of SiGe or SiGeSn and a second light-absorbing layer (112) of SiGeSn, both layers being lattice-matched to GaAs.

13. 发明公开

EP3358627A1 SOLAR CELL 审中-公开
公开(公告)号：EP3358627A1
公开(公告)日：2018-08-08
申请号：EP18154845.4
申请日：2018-02-02
申请人： LG Electronics Inc.
发明人： CHO, Haejong , OH, Donghae , CHEONG, Juhwa , AHN, Junyong
IPC分类号： H01L31/0224 , C03C3/12 , C03C8/18 , H01B1/16 , H01B1/22
CPC分类号： H01L31/022425 , C03C4/14 , C03C8/10 , C03C8/18 , C03C2204/00 , C03C2205/00 , H01B1/16 , H01L31/02167 , H01L31/02168 , H01L31/02363 , H01L31/03682 , H01L31/068 , H01L31/1864 , Y02E10/50
摘要： A solar cell is disclosed. The solar cell includes a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.

14. 发明公开

EP3347921A1 PROCÉDÉ DE FABRICATION D'UN DISPOSITIF À JONCTION ÉLECTRONIQUE ET DISPOSITIF ASSOCIÉ 审中-公开
公开(公告)号：EP3347921A1
公开(公告)日：2018-07-18
申请号：EP16775803.6
申请日：2016-09-07
申请人： Ecole Polytechnique , Université Paris-Sud , Centre National de la Recherche Scientifique
发明人： PLANTEVIN, Olivier , DEFRESNE, Alice , ROCA I CABARROCAS, Pere
IPC分类号： H01L31/0216 , H01L31/0747 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/0747 , H01L31/1804 , H01L31/1864 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： The invention concerns a method for manufacturing an electronic junction device, the electronic junction device (3) comprising a thin-layer surface passivation structure (10, 20) on a surface (1, 2) of a crystalline silicon substrate (4), the surface passivation structure (10, 20) having a determined thickness and comprising at least one thin layer (11, 12, 21, 22) of an amorphous or microcrystalline hydrogenated silicon. According to the invention, the manufacturing method comprises the following steps: a) ion irradiation of the surface passivation structure (10, 20) with an ion beam (30), avoiding the generation of defects in the crystalline substrate during said irradiation; and b) following said ion irradiation step a), thermal annealing of the substrate (4) and of the surface passivation structure (10, 20) at a temperature included in a range extending from 175°C to 530°C, thermal annealing step b) being carried out in the ambient air, under vacuum or in a gaseous atmosphere, and the duration of thermal annealing step b) being of between a few minutes and a few hours. An electronic junction device obtained according to said method is also described.

15. 发明公开

EP3343639A1 SOLAR CELL WITH HIGH PHOTOELECTRIC CONVERSION EFFICIENCY AND METHOD FOR PRODUCING SOLAR CELL WITH HIGH PHOTOELECTRIC CONVERSION EFFICIENCY 审中-公开
公开(公告)号：EP3343639A1
公开(公告)日：2018-07-04
申请号：EP16886817.2
申请日：2016-11-07
申请人： SHIN-ETSU CHEMICAL CO., LTD
发明人： HASHIGAMI, Hiroshi , WATABE, Takenori , OHTSUKA, Hiroyuki , MITTA, Ryo
IPC分类号： H01L31/0216 , H01L31/068
CPC分类号： H01L31/0682 , H01L31/02167 , H01L31/022441 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： The present invention provides a back surface electrode type solar cell in which a p-type region having a p-conductive type, and an n-type region which has an n-conductive type and in which maximum concentration of additive impurities for providing the n-conductive type in a substrate width direction is equal to or higher than 5×10 18 atoms/cm 3 are disposed on a first main surface of a crystal silicon substrate, a first passivation film is disposed so as to cover the p-type region and the n-type region, and a second passivation film is disposed on a second main surface which is a surface opposite to the first main surface so as to cover the second main surface, the first passivation film and the second passivation film being formed with a compound containing oxide aluminum. By this means, an inexpensive solar cell with high photoelectric conversion efficiency is provided.

16. 发明公开

EP3331029A1 TANDEM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 有权转让
公开(公告)号：EP3331029A1
公开(公告)日：2018-06-06
申请号：EP17180470.1
申请日：2017-07-10
申请人： LG Electronics Inc.
发明人： AHN, Seh-Won
IPC分类号： H01L31/0216 , H01L31/078
CPC分类号： H01L31/078 , H01G9/0029 , H01G9/2009 , H01L27/302 , H01L31/02167 , H01L31/022466 , H01L31/02363 , H01L31/0687 , H01L31/0725 , H01L31/1804 , H01L31/186 , H01L31/1884 , H01L51/0096 , H01L51/4213 , H01L51/442 , Y02E10/549
摘要： The present invention relates to a tandem solar cell and a method of manufacturing the same, and more particularly, to a tandem solar cell having a perovskite solar cell (120) stacked on and bonded to a silicon solar cell (110) and a method of manufacturing the same. According to the present invention, a tandem solar cell embodied by using a homojunction silicon solar cell is provided with a first passivation pattern (114) so that a part of an emitter layer under the first passivation pattern is exposed, thereby protecting, by the first passivation pattern, the emitter layer during high temperature firing for forming a second electrode, reducing surface defects of the emitter layer, and reducing a problem in that characteristics of the perovskite solar cell are degraded.

17. 发明公开

EP3316319A1 CELLULES PHOTOVOLTAÏQUES A CONTACTS ARRIERE ET LEUR PROCEDE DE FABRICATION 审中-公开
标题翻译：具有后期接触的光伏电池及其制造方法
公开(公告)号：EP3316319A1
公开(公告)日：2018-05-02
申请号：EP17199064.1
申请日：2017-10-28
申请人： Commissariat à l'Energie Atomique et aux Energies Alternatives
发明人： Cabal, Raphaël
IPC分类号： H01L31/068 , H01L31/18
CPC分类号： H01L31/0682 , H01L31/02167 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Ce procédé comporte les étapes :
a) prévoir un substrat (1), réalisé à base de silicium cristallin, et présentant :
- une première surface (10), destinée à être orientée vers un rayonnement solaire (R), et
- une seconde surface (11) opposée ;

b) former des premières couches diélectriques (2), comportant chacune des dopants de type n, P, As, Sb, sur la seconde surface (11) de sorte que la seconde surface (11) présente des zones libres ;
c) former une deuxième couche diélectrique (3), comportant des dopants de type p, B, Al, Ga, sur les premières couches diélectriques (2) et sur les zones libres ;
d) diffuser les dopants de type n et les dopants de type p, respectivement depuis les premières couches diélectriques (2) et depuis la deuxième couche diélectrique (3) formée sur les zones libres, sous la seconde surface (11) de manière à former des régions semi-conductrices dopées (20, 30).
摘要翻译：该方法包括以下步骤：a）提供由晶体硅制成的衬底（1），并具有： - 旨在朝向太阳辐射（R）定向的第一表面（10），以及 - 第二表面（11）相反; b）在第二表面（11）上形成各自具有n型掺杂物P，As，Sb的第一介电层（2），使得第二表面（11）具有自由区域; c）在所述第一介电层（2）上和所述自由区上形成包括p，B，Al，Ga掺杂物的第二介电层（3）; d）分别从第一介电层（2）和形成在自由区上的第二介电层（3）在第二表面（11）下方扩散n型掺杂物和p型掺杂物，以形成掺杂的半导体区域（20,30）。

18. 发明公开

EP3203530A4 SOLAR CELL AND METHOD FOR MANUFACTURING SAME 有权
公开(公告)号：EP3203530A4
公开(公告)日：2018-04-18
申请号：EP15846154
申请日：2015-07-02
申请人： SHINETSU CHEMICAL CO
发明人： MATSUO YOKO , WATABE TAKENORI , OTSUKA HIROYUKI
IPC分类号： H01L31/0224 , H01L31/068
CPC分类号： H01L31/0201 , H01L31/02167 , H01L31/022425 , H01L31/022433 , H01L31/022441 , H01L31/068 , H01L31/0682 , Y02E10/547
摘要： The present invention is a solar cell including: a semiconductor substrate of a first conductivity type having a region of the first conductivity type and a region of a second conductivity type on the back side, which is the opposite side of the light-receiving surface; a first finger electrode composed of a first contact portion and a first current collector, a second finger electrode composed of a second contact portion and a second current collector, a first bus bar electrode, and a second bus bar electrode on the backside; and an insulator film disposed at least in the whole area just under the first bus bar electrode and the second bus bar electrode; wherein the electrical contact between the first current collector and the first bus bar electrode as well as the electrical contact between the second current collector and the second bus bar electrode are made on the insulator film; and the first contact portion and the second contact portion are each in a continuous line shape at least just under the insulator film. This provides a solar cell with a wide passivation region, low wiring resistance, high parallel resistance, and high conversion efficiency; and a method for producing a solar cell which can produce such a solar cell at low cost.

19. 发明公开

EP3306674A1 SOLAR CELL ELEMENT AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：太阳能电池元件及其制造方法
公开(公告)号：EP3306674A1
公开(公告)日：2018-04-11
申请号：EP16800126.1
申请日：2016-05-27
申请人： Kyocera Corporation
发明人： MIURA, Yoshio
IPC分类号： H01L31/0216 , H01L21/312 , H01L21/316 , H01L31/068
CPC分类号： H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： In order to achieve a solar cell element superior to reliability and productivity while maintaining high photoelectric conversion efficiency, provided is a solar cell element (10) which includes a semiconductor substrate (1) including a p-type semiconductor region at one surface, a passivation layer (9) located on the p-type semiconductor region and containing aluminum oxide, and a protective layer (11) located on the passivation layer (9) and including polysiloxane which contains an alkyl group.
摘要翻译：本发明提供一种太阳能电池元件（10），其在保持高光电转换效率的同时实现可靠性和生产率优异的太阳能电池元件，该太阳能电池元件（10）包括：半导体基板（1），其在一个表面包括p型半导体区域;钝化位于p型半导体区域上且含有氧化铝的层（9）以及位于钝化层（9）上且包含含有烷基的聚硅氧烷的保护层（11）。

20. 发明公开

EP3170878A4 ADHESIVE FOR SOLAR-CELL BACKSHEET, POLYOL COMPOSITION FOR SOLAR-CELL BACKSHEET ADHESIVE, SOLAR-CELL BACKSHEET, AND SOLAR CELL MODULE 无效
公开(公告)号：EP3170878A4
公开(公告)日：2018-04-04
申请号：EP15822046
申请日：2015-07-17
申请人： DAINIPPON INK & CHEMICALS
发明人： UMINO AKIO , AKITA KOUJI , UNO SEIICHI , YAMASHITA KOUSEI , MIKI SHOU
IPC分类号： C09J175/06 , C08G18/10 , C08G18/38 , C08G18/42 , C08G18/79 , C09J11/06 , C09J133/14 , C09J167/00 , C09J175/04 , C09J201/06 , H01L31/049
CPC分类号： H01L31/02167 , C08G18/10 , C08G18/3846 , C08G18/4205 , C08G18/792 , C09J11/06 , C09J133/14 , C09J167/00 , C09J175/04 , C09J175/06 , C09J201/06 , H01L31/049 , Y02E10/50
摘要： There are provided an adhesive for a solar-cell back sheet having an excellent curing rate and being capable of exhibiting excellent adhesive performance by short-term aging, and also a polyol composition used for the adhesive, a solar-cell back sheet using the adhesive, and a solar-cell module using the sheet. The adhesive for a solar-cell back sheet contains, as essential components, at least one hydroxyl group-containing resin (A) selected from a polyester polyurethane polyol (A1), a polyester polyol (A2), a hydroxyl group-containing (meth)acrylic resin (A3), and a hydroxyl group-containing fluorocarbon resin (A4), a polyisocyanate (B), and a cyclic amide compound (C).

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