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    • 11. 发明公开
      EP2610588A3 Micro rate of rotation sensor and method for operating a micro rate of rotation sensor 有权 转让
    • Micro rate of rotation sensor and method for operating a micro rate of rotation sensor
    • 的旋转传感器的微率和方法用于操作的旋转传感器的一个微率
    • EP2610588A3
    • 2015-06-17
    • EP12197114.7
    • 2012-12-14
    • Maxim Integrated Products, Inc.
    • Coronato, Luca , Cazzaniga, Gabriele
    • G01C19/5747
    • G01C19/5712 , G01C19/42 , G01C19/5642 , G01C19/5719 , G01C19/5747
    • A micro rate of rotation sensor for detecting a plurality of rates of rotation about orthogonal axes (x, y, z), having a substrate (20), having a plurality of masses displaceable relative to the substrate (20) and disposed in an X-Y plane parallel to the substrate (20), having a plurality of anchors (2, 13) for attaching the masses to the substrate (20), having springs (4, 10) for connecting at least some of the masses to at least one adjacent mass or to at least one anchor (2, 13), having drive elements for oscillating at least several of the masses in the X-direction, in order to generate Coriolis forces when the substrate (20) is deflected, and having sensor elements (21) in order to detect deflections of the masses due to the Coriolis forces generated. The masses are divided into driving masses (11), X-Y sensor masses (8), or Z sensor masses (12). The X-Y sensor masses (8) are connected to the driving masses (11) and the Z sensor masses (12) by means of springs (10), and the connection between the X-Y sensor masses (8) and the driving masses (11) is such that when the driving masses (11) are driven to oscillate in the X-direction, the X-Y sensor masses (8) are driven to oscillate in the X-Y direction by means of the driving masses (11). In a method for operating a micro rate of rotation sensor for detecting a plurality of rates of rotation about orthogonal axes (x, y, z), having a substrate (20) and driving masses (11), X-Y sensor masses (8), and Z sensor masses (12) the driving masses (11) are driven by drive elements to oscillate in the X-direction, and the X-Y sensor masses (8) are driven to oscillate in the X-Y direction radially to a center by a connection to the driving masses (11). When a rate of rotation of the substrate (20) occurs about the X-axis or the Y-axis, the X-Y sensor masses (8) are jointly deflected about the Y-axis or X-axis, and when a rate of rotation of the substrate (20) occurs about the Z-axis, the X-Y sensor masses (8) are rotated about the Z-axis, and the Z sensor masses (12) are deflected substantially in the X-direction.
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 15. 发明公开
      EP2475959A1 DOPPELAXIALER, SCHOCKROBUSTER, DREHRATENSENSOR MIT LINEAREN UND ROTATORISCHEN SEISMISCHEN ELEMENTEN 有权 转让
    • DOPPELAXIALER, SCHOCKROBUSTER, DREHRATENSENSOR MIT LINEAREN UND ROTATORISCHEN SEISMISCHEN ELEMENTEN
    • DOPPELAXIALER，SHOCK HARDY，横摆率传感器具有线性和旋转地震ELEMENTS
    • EP2475959A1
    • 2012-07-18
    • EP10749889.1
    • 2010-09-09
    • Continental Teves AG & Co. oHG
    • SCHMID, Bernhard , GÜNTHNER, Stefan
    • G01C19/56
    • G01C19/574 , G01C19/5642 , G01C19/5719
    • Micromechanical yaw rate sensor, comprising a substrate, the base area of which is oriented parallel to the x-y plane of a Cartesian coordinate system (x, y, z), wherein the yaw rate sensor comprises at least a first and a second seismic mass (1), which are coupled to at least one drive device (23), and are mounted (3, 4), such that the first and second seismic masses (1) are driven in a drive mode so as to deflect in phase opposition, wherein the yaw rate sensor is designed such that it can detect yaw rates about at least two sensitive axes (z, y) that are substantially perpendicular to each other, wherein at least the first and second seismic masses (1) are designed and mounted such that upon detecting a first yaw rate they oscillate in phase opposition about the first sensitive axis (y) in a first read-out mode, and the first and second seismic masses (1) and/or additional seismic masses (10) are designed and mounted (5, 7, 9, 11) such that upon detecting a second yaw rate they oscillate in phase opposition about the second sensitive axis (z) in a second read-out mode, wherein the seismic masses (1, 10) are associated with read devices (15,1 6, 17, 18, 19, 20, 21, 22), which are designed and disposed with respect to the seismic masses (1, 10), such that they detect the deflections of the seismic masses (1, 10) with respect to the first and with respect to the second read-out mode both in phase and in the opposite phase.
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 16. 发明公开
      EP2110847A4 METHOD FOR CORRECTING MASK PATTERN AND METHOD FOR MANUFACTURING ACCELERATION SENSOR AND ANGULAR VELOCITY SENSOR BY USING SAME 有权
    • METHOD FOR CORRECTING MASK PATTERN AND METHOD FOR MANUFACTURING ACCELERATION SENSOR AND ANGULAR VELOCITY SENSOR BY USING SAME
    • 方法CORRECTING罩结构及其制造方法的加速度传感器和角速度传感器BY使用它
    • EP2110847A4
    • 2012-05-09
    • EP08847989
    • 2008-10-30
    • DAINIPPON PRINTING CO LTD
    • MORII AKIO
    • H01L21/3065 , G01C19/56 , G01P15/12 , G01P15/125 , G01P15/18 , G03F1/00 , G03F1/68 , H01L29/84
    • G01P15/125 , G01C19/5719 , G01C25/00 , G01P15/0802 , G01P15/123 , G01P2015/0828 , G01P2015/0842
    • The present invention provides a method for correcting a mask pattern used for dry-etching an object to be etched, such as a silicon wafer or the like, with higher accuracy, and also provides a method for readily manufacturing an acceleration sensor and an angular velocity sensor, each having a significantly small size and excellent reliability. In this method, the object to be etched is first etched by a dry-etching process using a reference mask pattern which is not yet corrected. Then, distribution of the size of expansion of a tapered portion formed in a surface of the object is measured. Thereafter, the measured distribution is approximated by using a quadratic curve (Y = AX 2 +B) so as to determine A and B. Consequently, an amount t of correction for the tapered portion, which is expressed by the following equation (1) and related to a width of an opening of the mask pattern in a position at a distance r from a center of the object to be etched, can be set. In this way, the correction for the tapered portion can be carried out. Additionally, distribution of the size of a tilted portion is measured, and the measured distribution is then approximated by using a straight line (Y = kX) so as to determine k (k>0). Consequently, an amount C x of correction in the X-axial direction and an amount C y of correction in the Y-axial direction, respectively expressed by the following equations (2-1) and (2-2) and related to the width of the opening of the mask pattern in a position corresponding to a position vector r having coordinates (x, y) relative to the center of the object to be etched, can be set, thereby performing the correction for the tilted portion. t = Ar 2 + B / 2 C x = kx C y = ky
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
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