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    • 12. 发明公开
    • WASHING LIQUID FOR PHOTOLITHOGRAPHY, AND METHOD FOR WASHING EXPOSURE DEVICE USING THE SAME
    • 洗涤粉洗涤曝光装置的光刻和方法
    • EP1962327A1
    • 2008-08-27
    • EP06823501.9
    • 2006-11-22
    • TOKYO OHKA KOGYO CO., LTD.
    • KOSHIYAMA, JunSAWADA, YoshihiroYOKOYA, JiroHIRANO, Tomoyuki
    • H01L21/027C11D1/66C11D3/43G03F7/20H01L21/304
    • C11D3/43C11D1/66C11D1/667C11D1/72C11D3/18C11D3/181C11D3/182C11D3/184C11D3/188G03F7/2041G03F7/70341G03F7/70925G03F7/70983
    • Problem: To provide a cleaning liquid for lithography and a cleaning method using it for photoexposure devices. In a process of liquid immersion lithography, the cleaning liquid may efficiently clean the photoexposure device site (especially optical lens member) contaminated with the component released from photoresist and remove the contaminant, and in addition, the waste treatment for the cleaning liquid is easy, the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the cleaning liquid does not detract from the throughput in semiconductor production. Means for Solution; A cleaning liquid for photolithography to be used for cleaning a photoexposure device in a process of liquid immersion lithography that comprises filling the space between the optical lens member of a photoexposure device and an object for photoexposure mounted on the wafer stage, with a medium for liquid immersion lithography, the cleaning liquid comprising (a) a surfactant. (b) a hydrocarbon solvent, and (c) water; and a cleaning method using it for photoexposure devices.
    • 问题:提供用于平版印刷的清洁液和使用它的照片曝光装置的清洁方法。 在液浸曝光的过程中,清洗液可以有效地清洁照片曝光装置部位(特别是光学透镜部件)污染成分从光致抗蚀剂释放和去除污染物,并且另外,废物处理的清洗液很容易, 与用于液浸曝光的介质的清洗液置换效率高,与清洗液不从半导体生产吞吐量减损。 解决手段; 要用于在液浸曝光的过程清洗相片曝光装置用于光刻的清洗液没有包含填充照片曝光装置的光学透镜部件之间的空间,以对象为安装在晶片台上的照片曝光,具有用于液体的介质 浸没式光刻,清洗液包含(A)表面活性剂。 (B)烃溶剂,及(c)水; 和使用它的照片曝光装置的清洁方法。