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11. 发明公开

EP3883130A1 BULK ACOUSTIC WAVE RESONATOR, FILTER, AND ELECTRONIC DEVICE 审中-实审
公开(公告)号：EP3883130A1
公开(公告)日：2021-09-22
申请号：EP19884110.8
申请日：2019-10-29
申请人： Tianjin University , Rofs Microsystem (Tianjin) Co., Ltd
发明人： ZHANG, Menglun , PANG, Wei , SUN, Chen , YANG, Qingrui
IPC分类号： H03H9/25
摘要： The present invention relates to a bulk acoustic wave resonator, including: a substrate; an acoustic mirror; a bottom electrode arranged above the substrate; a top electrode opposed to the bottom electrode; and a piezoelectric layer arranged above the bottom electrode and between the bottom electrode and the top electrode, wherein at least one of the two ends of the top electrode is provided with a transverse mode vibration suppression structure, and the suppression structure includes a non-parallel structure of upper and lower surfaces arranged on at least one of the two ends of the top electrode. The present invention further relates to a filter having the resonator, and an electronic device having the filter.

12. 发明公开

EP3869579A1 PACKAGING STRUCTURE AND SEMICONDUCTOR DEVICE HAVING SAME, AND ELECTRONIC APPARATUS HAVING SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP3869579A1
公开(公告)日：2021-08-25
申请号：EP19873681.1
申请日：2019-10-18
申请人： Tianjin University , Rofs Microsystem (Tianjin) Co., Ltd
发明人： YANG, Qingrui , PANG, Wei , SUN, Chongling , ZHANG, Menglun
IPC分类号： H01L51/52 , H01L27/32
摘要： The present disclosure relates to a packaging structure for a semiconductor device, including: an adhesive layer; and at least two spaced apart sealing strips, wherein: the sealing strips protrude toward the adhesive layer and are suitable for abutting against the adhesive layer. Connecting beams can be arranged between adjacent sealing strips. The present disclosure further relates to a semiconductor device having the packaging structure. The semiconductor device includes the above-mentioned packaging structure; a first substrate; and a second substrate arranged opposite to the first substrate, wherein the packaging structure is arranged between the first substrate and the second substrate, and the first substrate, the second substrate and the packaging structure are enclosed to form an accommodating space. The present disclosure further relates to an electronic device including the above-mentioned semiconductor device.

13. 发明公开

EP4142153A1 BULK ACOUSTIC RESONATOR AND METHOD FOR DESIGNING SAME, FILTER AND ELECTRONIC DEVICE 审中-实审
公开(公告)号：EP4142153A1
公开(公告)日：2023-03-01
申请号：EP21792954.6
申请日：2021-04-20
申请人： ROFS MICROSYSTEM (TIANJIN) CO., LTD.
发明人： ZHANG, Quande , PANG, Wei
IPC分类号： H03H9/58 , H03H9/17
摘要： A bulk acoustic resonator, an effective region of which has an effective area. In the effective region, a second end point (32') of an input side (31), a first end point (34') of an output side (34), a second end point (35') of the output side (34) and a first end point (31') of the input side (31) are successively connected to each other to define a basic quadrilateral, and the area of the quadrilateral is not greater than the effective area; in a convex polygon, the length of the input side (31) and the length of the output side (34) are within a range from more than 1.5 times the equivalent side length to less than 2.5 times the equivalent side length, and the equivalent side length is the length of sides of a regular pentagon of which the area is equivalent to the effective area; an interior angle (b21) where the second end point (32') of the input side (31) of the convex polygon is located is within a range of greater than 90°C and not greater than 150°C, and the other interior angles (b22, b23, b24, b25, b26) of the convex polygon are within a range of not less than 60° and not greater than 150°C, and an obtuse angle (a3) formed by a basic input side and a basic output side is within a range of not less than 110° and not greater than 170°. The present disclosure also relates to a method for designing the resonator, a filter and an electronic device.

14. 发明公开

EP4089917A1 CHIP PACKAGING MODULE AND PACKAGING METHOD THEREOF, AND ELECTRONIC DEVICE WITH CHIP PACKAGING MODULE 审中-实审
公开(公告)号：EP4089917A1
公开(公告)日：2022-11-16
申请号：EP20896027.8
申请日：2020-05-06
申请人： Tianjin University , Rofs Microsystem (Tianjin) Co., Ltd
发明人： PANG, Wei , WANG, Yunfeng , YANG, Qingrui , ZHANG, Menglun
IPC分类号： H03H3/007 , H01L23/31 , H03H9/02
摘要： Disclosed are a chip packaging module and a packaging method thereof, and an electronic device with the chip packaging module. The chip packaging module includes: a chip (15); a package substrate (10), which faces the chip (15), a cavity being formed therebetween; a first packaging layer (17) for packaging the chip (15) on the package substrate (10); and a second packaging layer (19), which covers an outer side of the first packaging layer (17), wherein the first packaging layer (17) includes an extension part extending outwards in the transverse direction of the package substrate (10), a lower side of the extension part covers an upper side of the package substrate (10), and an end part of the second packaging layer (19) is in surface contact with an upper side of the extension part.

15. 发明公开

EP4087129A1 BULK ACOUSTIC RESONATOR AND RESONATOR SET PROVIDED WITH ACOUSTIC INTERFERENCE ARRAYS, AND FILTER AND ELECTRONIC DEVICE 审中-实审
公开(公告)号：EP4087129A1
公开(公告)日：2022-11-09
申请号：EP20909776.5
申请日：2020-05-06
申请人： Rofs Microsystem (Tianjin) Co., Ltd
发明人： PANG, Wei , YANG, Qingrui , ZHANG, Menglun
IPC分类号： H03H9/02 , H03H9/15
摘要： Disclosed is a bulk acoustic resonator. The bulk acoustic resonator includes: a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer arranged between the bottom electrode and the top electrode, wherein an overlapping area, in the thickness direction of the resonator, of the top electrode, the piezoelectric layer, the bottom electrode and the acoustic mirror forms an effective area of the resonator; the resonator is provided with an acoustic mismatching structure at an edge of the effective area; and acoustic interference arrays are arranged on the top surface of the resonator, and the acoustic interference arrays include a central array covering the effective area, and a peripheral array covering at least part of the acoustic mismatching structure. Further disclosed are a bulk acoustic resonator set, a filter provided with the resonator or the resonator set, and an electronic device provided with the resonator, the resonator set or the filter.

16. 发明公开

EP4087125A1 SEMICONDUCTOR STRUCTURE WITH STACKED UNIT AND MANUFACTURING METHOD, AND ELECTRONIC DEVICE 审中-实审
公开(公告)号：EP4087125A1
公开(公告)日：2022-11-09
申请号：EP20909087.7
申请日：2020-05-06
申请人： Rofs Microsystem (Tianjin) Co., Ltd
发明人： WEN, Pan , PANG, Wei , ZHANG, Lanyue , ZHANG, Wei , ZHANG, Menglun , YANG, Qingrui
IPC分类号： H03H3/007
摘要： The present disclosure relates to a semiconductor structure with stacked units, the semiconductor structure including at least two units stacked in the thickness direction of the semiconductor structure, wherein each unit comprises a substrate, and at least one of the at least two units is provided with a device on the substrate thereof; each unit further includes a plurality of conductive bumps arranged on the substrate; corresponding conductive bumps of two adjacent stacked units are opposite each other and are connected in a bonding manner; and a top substrate of the uppermost unit of the at least two stacked units and a bottom substrate of the lowermost unit thereof form an encapsulation layer of the semiconductor structure. The present disclosure further relates to a manufacturing method for the semiconductor structure with stacked units, and an electronic device with the structure.

17. 发明公开

EP4086955A1 SEMICONDUCTOR STRUCTURE HAVING STACKED UNITS AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE 审中-实审
公开(公告)号：EP4086955A1
公开(公告)日：2022-11-09
申请号：EP20911018.8
申请日：2020-05-06
申请人： Rofs Microsystem (Tianjin) Co., Ltd
发明人： ZHANG, Lanyue , PANG, Wei , WEN, Pan , ZHANG, Wei , YANG, Qingrui , ZHANG, Menglun
IPC分类号： H01L25/00 , H01L23/488 , H01L21/50
摘要： The present disclosure relates to a semiconductor structure having stacked units, including at least two units stacked in a thickness direction of the semiconductor structure; the at least two units are provided with at least one chip and include at least one unit pair; the unit pair includes an upper unit and a lower unit which are adjacent in the thickness direction of the semiconductor structure, the upper unit is above the lower unit, and both the upper unit and the lower unit include a base; the lower surface of the base of the upper unit is provided with a plurality of bump structures protruding downward, and each bump structure is covered with a bonding layer, and the bonding layer forms a bonding-bump structure together with the bump structure; the upper surface of the base of the lower unit is provided with conductive bumps protruding upward, and each bonding-bump structure and a corresponding conductive bump are opposite and aligned with each other, and are connected by bonding; and a first accommodating space is defined between the lower surface of the base of the upper unit and the upper surface of the base of the lower unit. The present disclosure further relates to a manufacturing method for a semiconductor structure having stacked units, and an electronic device having the structure.

18. 发明公开

EP4084332A1 REFLECTIONLESS FILTER AND ELECTRONIC DEVICE 审中-实审
公开(公告)号：EP4084332A1
公开(公告)日：2022-11-02
申请号：EP20907583.7
申请日：2020-05-06
申请人： Rofs Microsystem (Tianjin) Co., Ltd
发明人： YANG, Qingrui , PANG, Wei
IPC分类号： H03H9/17 , H03H9/02
摘要： The present disclosure relates to a reflectionless filter, including: a symmetrical two-port circuit, the circuit including series resonator branches and multiple parallel resonator branches, each series resonator branch being provided with a series resonator unit, and each parallel resonator branch being provided with a parallel resonator unit, wherein the series resonator unit includes a parallel module formed by a bulk acoustic resonator and an inductor connected in parallel with each other, and the parallel resonator unit of each of at least two parallel resonator branches includes a series module formed by a bulk acoustic resonator and an inductor connected in series with each other. The present disclosure also relates to an electronic device having the reflectionless filter.

19. 发明公开

EP4068628A1 BULK ACOUSTIC RESONATOR WITH ELECTRODE HAVING VOID LAYER, AND FILTER AND ELECTRONIC DEVICE 审中-实审
公开(公告)号：EP4068628A1
公开(公告)日：2022-10-05
申请号：EP20879253.1
申请日：2020-05-06
申请人： Rofs Microsystem (Tianjin) Co., Ltd
发明人： PANG, Wei , ZHANG, Menglun , XU, Yang , YANG, Qingrui
IPC分类号： H03H9/02
摘要： The present disclosure relates to a bulk acoustic wave resonator. The resonator includes: a base, an acoustic lens, a bottom electrode, a top electrode, and a piezoelectric layer provided between the bottom electrode and the top electrode, wherein one of the bottom electrode and the top electrode is a first gap electrode; the first gap electrode is provided with a first electrode and a second electrode; the first electrode is in surface contact with the piezoelectric layer, the second electrode is away from the piezoelectric layer, and a gap layer is located between the first electrode and the second electrode in the thickness direction of the resonator; and the first electrode and the second electrode are electrically connected at an electrical connection portion, and the electrical connection portion defines at least part of a boundary of the gap layer. The resonator further includes an electrical isolation portion, wherein the projection of the electrical connection portion in the thickness direction of the resonator falls within the electrical isolation portion, and the inner side of the electrical isolation portion is used for defining a boundary of an active region of the resonator in the transverse direction of the resonator. The present disclosure further relates to a filter having the resonator and an electronic device having the filter or the resonator.

20. 发明公开

EP4064561A1 BULK ACOUSTIC RESONATOR PROVIDED WITH NON-CONDUCTIVE INSERTION LAYER, FILTER, AND ELECTRONIC DEVICE 审中-实审
公开(公告)号：EP4064561A1
公开(公告)日：2022-09-28
申请号：EP20875951.4
申请日：2020-02-21
申请人： Tianjin University , Rofs Microsystem (Tianjin) Co., Ltd
发明人： ZHANG, Menglun , PANG, Wei , YANG, Qingrui
IPC分类号： H03H9/02 , H03H9/17 , H03H9/56
摘要： A bulk acoustic resonator, which includes: a substrate; an acoustic lens (18); a bottom electrode (10); a top electrode (12); and a piezoelectric layer (11). An edge part of the top electrode (12) is provided with a gap part, a gap is present between the gap part and the piezoelectric layer (11) in the thickness direction of the resonator, and a non-conductive insertion layer (13) is provided in at least a part of the gap. The present disclosure further relates to a filter and an electronic device.

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