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    • 12. 发明公开
    • Current detection structure
    • 当前检测结构
    • EP2899551A2
    • 2015-07-29
    • EP15151708.3
    • 2015-01-20
    • HITACHI METALS, LTD.
    • Okuyama, KenChiwata, NaofumiAkimoto, KatsuyaFutakuchi, NaokiIkeda, YukioTakahashi, Kazuhisa
    • G01R15/20
    • G01R19/0092G01R15/205G01R15/207G01R33/093
    • A current detection structure (1) includes a busbar (2) to flow a current therethrough, a magnetic detection element (3) to detect a strength of a magnetic field generated by the current flowing through the busbar, and a current detecting portion (7) to determine the current flowing through the busbar based on the magnetic field detected by the magnetic detection element. A through-hole (4) is formed penetrating the busbar such that a current path (5, 6) is formed on both sides of the through-hole. The magnetic detection element is disposed in the through-hole. The current detecting portion determines the current flowing through the busbar based on a strength of a synthetic magnetic field detected by the magnetic detection element. The synthetic magnetic field is produced by combining a magnetic field that is generated by a current flowing through the current path on the both sides of the through-hole.
    • 电流检测结构(1)包括:用于流过电流的母线(2);检测由流过母线的电流产生的磁场强度的磁检测元件(3);以及电流检测部分(7 )以基于由磁检测元件检测到的磁场来确定流过母线的电流。 通孔(4)形成为贯穿汇流条,使得电流通路(5,6)形成在通孔的两侧。 磁检测元件设置在通孔中。 电流检测部分基于由磁检测元件检测到的合成磁场的强度来确定流经汇流条的电流。 合成磁场是通过组合由流过通孔两侧的电流通路的电流产生的磁场而产生的。