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    • 13. 发明公开
    • Preparation of high purity boron
    • Herstellung von Bor hoher Reinheit。
    • EP0363743A2
    • 1990-04-18
    • EP89117963.2
    • 1989-09-28
    • ETHYL CORPORATION
    • Allen, Robert HallIbrahim, Jameel
    • C01B35/02C30B15/04
    • C01B35/023C30B15/04Y10T428/29Y10T428/2982
    • Electronic grade boron in the form of free-flowing, bead-like particles, and suitable for use in continuous and semi-continuous Czochralski systems for preparing doped, single crystal silicon, said particles having an average size within the range of from 500 to 700 microns, a size distribution of less than 100 - 150 microns, and a purity of at least 99.9995 percent.
      A process for preparing it, comprising contacting in a fluidized bed, (a) boron seed particles having a size within the range of from 150 to 200 millimicrons with (b) a gas comprising a thermally decomposable boron hydride, such as diborane ou decaborane, said seed particles being above the decompostition temperature of said hydride, whereby deposition of boron on said seed particles takes place until said particles have grown to an average size within the range of from 500 to 700 microns.
    • 电子级硼形式为自由流动的珠状颗粒,适用于制备掺杂单晶硅的连续和半连续切克劳斯基系统,所述颗粒的平均尺寸范围为500至700 微米,尺寸分布小于100-150微米,纯度至少为99.9995%。 一种制备方法,包括在流化床中接触(a)尺寸在150至200毫微米范围内的硼晶粒,(b)包含可热分解的硼氢化物的气体,例如十硼烷乙硼烷, 所述种子颗粒高于所述氢化物的分解温度,由此在所述种子颗粒上沉积硼直到所述颗粒已经生长至在500至700微米范围内的平均尺寸。