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    • 114. 发明公开
    • Electron emission device, electron emission type backlight unit and flat display appaatus having the same
    • 电子发射装置,电子发射型背光单元和具有相同的平面显示器
    • EP1746634A2
    • 2007-01-24
    • EP06117615.2
    • 2006-07-21
    • Samsung SDI Co., Ltd.
    • Cho, Young-SukBae, Jae-WooLim, Ik-ChulChoi, Yong-SooDo, Ui-SongKang, Dong-HyunJoo, Kyu-Nam
    • H01J63/06H01J31/12H01J61/30
    • H01J63/06H01J1/304H01J3/021H01J3/08H01J29/481H01J31/127H01J63/02
    • An electron emission device (102) with improved electron emission efficiency and an electron emission type backlight unit with a new structure using the electron emission device in which an electric field between an anode electrode (80) and a cathode electrode (120) is effectively blocked, and electrons are emitted continuously and stably by a low gate voltage, thereby improving light-emitting uniformity and efficiency. Also provided is a flat display apparatus employing the electron emission type backlight unit (100) having the electron emission device. The electron emission device includes a base substrate (110); a cathode electrode formed on the base substrate having a cross-section whose height is greater than its width; a gate electrode (140) that is formed on the base substrate and alternately separated from the cathode electrode and has a cross-section whose height is greater than its width; and an electron emission layer (150) disposed on a surface of the cathode electrode toward the gate electrode.
    • 一种具有改进的电子发射效率的电子发射装置(102)和一种采用其中阳极电极(80)和阴极电极(120)之间的电场被有效阻挡的电子发射装置的新结构的电子发射型背光单元 并且通过低栅极电压连续稳定地发射电子,从而提高了发光均匀性和效率。 还提供了采用具有电子发射装置的电子发射型背光单元(100)的平板显示装置。 该电子发射装置包括基础衬底(110); 形成在具有高度大于其宽度的横截面的基底衬底上的阴极; 栅电极(140),其形成在所述基底基板上并且与所述阴极交替分离并且具有高度大于其宽度的截面; 和设置在阴极的朝向栅电极的表面上的电子发射层(150)。
    • 117. 发明授权
    • MINIATURISIERTE TERAHERTZ-STRAHLUNGSQUELLE
    • 微型太赫兹辐射SOURCE
    • EP1186079B1
    • 2005-02-02
    • EP00934998.6
    • 2000-05-10
    • NaWoTec GmbH
    • KOOPS, Hans, W., P.BAUER, TobiasELSÄSSER, WolfgangFLOREANI, FilipROSKOS, Hartmut
    • H01S4/00
    • H01S3/0903H01J3/021H01J25/00
    • The invention relates to a miniaturized terahertz radiation source based on the Smith-Purcell effect. According to the invention, an energy-rich electron beam is emitted from a focused electron source at a defined distance across a metal grid of transversal grid rods so that oscillating image charges emit electromagnetic waves of a wavelength that can be adjusted on the basis of the periodicity of the webs and the electron speed. The elements of the radiation source such as the field emitter (1), the electrostatic lens (4), the beam deflector (5), the metal grid (7) and a second anode (8) are located on a semiconductor chip integrated by means of additive nanolithography methods. The field electron source is configured as a highly conductive wire with a stabilizing external resistor that is produced by additive nanolithography methods and protrudes from the surface. Said wire is produced by computer-controlled deposition lithography as a self-contained straight or arcuate structure. The base material, in its surface, has a track structure for the electrical connections and links (2) with controlled supply terminals (3) for supplying the field emitter tips (1), the lens (4) and the control electrodes (5, 8) with power. The terahertz radiation source according to the invention is powerful and can be used as a modular component irrespective of its spatial arrangement.