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101. 发明公开

EP0190855A3 IMPROVED PHOTOVOLTAIC DEVICE TOLERANT OF LOW RESISTANCE DEFECTS 失效
标题翻译：改进的低电阻缺陷的光伏器件耐受性
公开(公告)号：EP0190855A3
公开(公告)日：1986-12-30
申请号：EP86300515
申请日：1986-01-27
申请人： ENERGY CONVERSION DEVICES, INC.
发明人： NATH, PREM. , BARNARD, TIMOTHY J. , CREA, DOMINIC
IPC分类号： H01L31/04 , H01L31/0224 , H01L31/076 , H01L31/20 , H01L31/02 , H01L31/06
CPC分类号： H01L31/076 , H01L31/022425 , H01L31/208 , Y02E10/548 , Y02P70/521
摘要： An improved photovoltaic device (10, 10″, 10‴) exhibiting increased tolerance of low resistance defects includes a substrate (14) having a semiconductor body (12) disposed on it, a bus grid current collecting structure (22) disposed upon the semiconductor body and a transparent conductive electrode (32) overlying at least a portion of the semiconduc tor body. A layer of relatively high resistivity material (29, 29′, 29″) is disposed within the structure to restrict current from flowing directly between the substrate and the bus grid structure through a low resistance defect current path. The high resistivity layer may be disposed on the semiconductor body beneath the transparent electrode or on the substrate and in contact with the semiconductor body. In the former case, the transparent electrode may be interposed between the bus grid structure and high resistivity material or may be disposed on top of the bus grid structure. Preferably, the high resistivity layer is formed into a pattern corresponding to at least a portion of the bus grid structure and in registration with it.
摘要翻译：显示增强的低电阻缺陷公差的改进的光伏器件（10,10秒，10“）包括具有设置在其上的半导体本体（12）的衬底（14），布置在其上的总线电流集电结构（22）半导体本体和覆盖半导体本体的至少一部分的透明导电电极（32）。在该结构内设置一层较高电阻率的材料（29,29分钟，29秒），以限制电流通过低电阻缺陷电流路径直接流过衬底和母线栅格结构之间。高电阻率层可以设置在半导体本体下方的透明电极或基板上并与半导体本体接触。在前一种情况下，透明电极可以插入在总线栅格结构和高电阻率材料之间，或者可以设置在总线栅格结构的顶部。优选地，高电阻率层形成为对应于总线栅格结构的至少一部分并与其对准的图案。

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