会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 103. 发明公开
    • LED PATTERN WAFER, LED EPITAXIAL WAFER, AND PRODUCTION METHOD FOR LED EPITAXIAL WAFER
    • MUSTER-WAFERFÜREINE LEUCHTDIODE UND EPITAKTISCHER WAFERFÜREINE LEUCHTDIODE
    • EP3007237A1
    • 2016-04-13
    • EP14803459.8
    • 2014-05-28
    • Asahi Kasei E-Materials Corporation
    • KOIKE, Jun
    • H01L33/22H01L21/205H01L21/3065
    • H01L33/20H01L21/0237H01L21/0243H01L21/02458H01L21/0254H01L22/12H01L33/005H01L33/007
    • A pattern wafer (10) for LEDs is provided with an uneven structure A (20) having an arrangement with n-fold symmetry substantially on at least a part of the main surface, where in at least a part of the uneven structure A (20), a rotation shift angle Θ meets 0°≤Θ≤(180/n)° in which Θ is the rotation shift angle of an arrangement axis A of the uneven structure A (20) with respect to a crystal axis direction in the main surface, and a top of the convex-portion of the uneven structure A (20) is a corner portion with a radius of curvature exceeding "0". A first semiconductor layer (30), light emitting semiconductor layer (40) and second semiconductor layer (50) are layered on the uneven structure A (20) to constitute an epitaxial wafer (100) for LEDs. It is possible to provide the pattern wafer for LEDs and epitaxial wafer for LEDs with cracks and internal quantum efficiency IQE improved.
    • 用于LED的图案晶片(10)设置有基本上在主表面的至少一部分上具有n倍对称配置的不平坦结构A(20),其中在不平坦结构A(20)的至少一部分 ),旋转偏移角〜满足0°‰〜(¯)(180 / n)°,其中〜是不平坦结构A(20)相对于晶轴方向的排列轴A的旋转移位角 主表面和凹凸结构A(20)的凸部的顶部是曲率半径超过“0”的角部。 第一半导体层(30),发光半导体层(40)和第二半导体层(50)被层叠在不平坦结构A(20)上以构成用于LED的外延晶片(100)。 可以提供用于LED的图案晶片和用于具有裂纹和内部量子效率IQE的LED的外延晶片。
    • 106. 发明公开
    • FUNCTION-TRANSFERRING OBJECT, METHOD FOR TRANSFERRING FUNCTIONAL LAYER, PACKAGE AND FUNCTION-TRANSFERRING FILM ROLL
    • 功能转换对象,方法用于转移功能层,包装和功能支持的电影角色
    • EP2862707A1
    • 2015-04-22
    • EP13804276.7
    • 2013-06-10
    • Asahi Kasei E-Materials Corporation
    • KOIKE, JunYAMAGUCHI, Fujito
    • B32B3/30B29C59/02B29C59/04H01L21/027
    • B32B3/30B32B27/08B32B27/16B32B27/38B32B27/42B32B37/025B32B37/18B32B38/10B32B2307/536B32B2307/538B32B2457/00B32B2457/18B32B2457/206B32B2551/00G03F7/0002H01L2933/0083Y10T428/1352Y10T428/24355
    • A function transfer product (14) is provided with a carrier (10) having a concavo-convex structure (11) of nanostructure, and a functional layer (12) provided on the concavo-convex structure (11). The functional layer (12) is beforehand provided on the surface of the concavo-convex structure (11), and is directly brought into contact with one main surface of a target object (20), and then the carrier (10) is removed from the functional layer (12) to transfer the functional layer (12) to the target object (20). An average pitch of the concavo-convex structure (11) ranges from 1 nm to 1500 nm, the functional layer (12) contains a resin, and a ratio (Ra/lor) between surface roughness (Ra) on the exposed surface side of the functional layer (12) and a distance between a top position of a convex-portion of the concavo-convex structure (11) and the exposed surface of the functional layer (12) is 1.2 or less. Further, the functional layer (12) is arranged inside concave portions (11a), and the exposed surface thereof is in a non-liquid state at a temperature of 20°C under light shielding. It is possible to add the function onto the target object (20) with high accuracy.
    • 函数转移产物(14)设置有具有纳米结构的凹凸结构(11)的载体(10),和设置在该凹凸结构(11)的功能层(12)。 功能层(12)被预先设置凹凸结构(11)的表面上,并且直接接触与目标对象(20)的一个主表面上,然后所述载体(10)由去除 功能层(12)到所述功能层(12)转移到目标对象(20)。 凹凸结构的平均间距(11)的范围为1个纳米到1500纳米,所述功能层(12)包含上的暴露的表面侧的树脂,和表面粗糙度(Ra)之间的比率(RA / LOR) 功能层(12)和所述凹凸结构(11)的凸部的顶部位置和所述功能层(12)的暴露的表面之间的距离为1.2或更小。 此外,功能层(12)布置的凹部(11A)内,并且其露出面是在非液体状态在20℃下光屏蔽的温度。 有可能添加函数到所述目标物体(20)以高精确度。