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    • 91. 发明公开
    • Semiconductor integrated circuit device and production method thereof
    • Integrierte Halbleiterschaltungsanordnung und Verfahren zu deren Herstellung。
    • EP0652593A2
    • 1995-05-10
    • EP94117362.7
    • 1994-11-03
    • HITACHI, LTD.
    • Yano, KazuoSasaki, Yasuhiko
    • H01L27/02H03K19/173
    • H03K19/1735H01L27/0207H01L27/11807H01L2924/14H01L2924/00
    • The semiconductor integrated circuit enjoys a high performance and can be produced at a low production cost and within a short time. A cell has an internal circuit connection such that an output terminal (22) is connected to a plurality of input terminals (19 to 21) through source-drain paths of active devices (M13 to M16) connected in the tree form, and gate electrodes of the active devices (M13 to M16) are connected to other input terminals (15 to 18). Two such cells having the same internal circuit connection, the same disposition of the internal circuit devices and the same disposition of the input/output terminals are disposed on the same chip, and mutually different logics can be accomplished by changing the form of application of input signals from outside the cells to the input terminals. A chip area of an integrated circuit designed by CAD using a cell library can be reduced and a high speed circuit operation can be attained. The present invention provides remarkable effect for improving performance of an ASIC, a microprocessor, etc., and for reducing the cost of production.
    • 半导体集成电路具有高性能,可以在低成本和短时间内生产。 单元具有内部电路连接,使得输出端子(22)通过以树形形式连接的有源器件(M13至M16)的源极 - 漏极连接到多个输入端子(19至21),并且栅电极 的有源器件(M13至M16)连接到其他输入端子(15至18)。 具有相同内部电路连接的两个这样的单元,内部电路装置的相同配置和输入/输出端子的相同配置设置在同一芯片上,并且可以通过改变输入的应用形式来实现彼此不同的逻辑 从单元外部到输入端子的信号。 可以减少由CAD使用单元库设计的集成电路的芯片面积,并且可以实现高速电路操作。 本发明对于提高ASIC,微处理器等的性能以及降低生产成本提供显着的效果。
    • 93. 发明公开
    • Integrated circuit devices
    • Integrierte Schaltungsvorrichtungen。
    • EP0647030A2
    • 1995-04-05
    • EP94115120.1
    • 1994-09-26
    • TEXAS INSTRUMENTS INCORPORATED
    • Mahant-Shetti, Shivaling S.Landers, Robert J.
    • H03K19/173H03K19/21
    • H03K19/215H03K17/693H03K19/1736
    • A base cell device (10) includes a first transmission gate (12) configured as a multiplexer comprising an N-channel transistor (14) and a P-channel transistor (16). The base cell device (10) also includes a second transmission gate (18) configured as a multiplexer that comprises an N-channel transistor (20) and a P-channel transistor (22). The first transmission gate (12) and the second transmission gate (18) each receive a control signal C and an inverted control signal from an inverter (24). The first transmission gate (12) receives a first input signal (A) and the second transmission gate (18) receives a second input signal (B). The base cell device (10) generates a common output signal (O) from the first transmission gate (12) and the second transmission gate (18). The base cell device (10) is capable of performing all two input function operations.
    • 基站装置(10)包括被配置为包括N沟道晶体管(14)和P沟道晶体管(16)的多路复用器的第一传输门(12)。 基站装置(10)还包括被配置为包括N沟道晶体管(20)和P沟道晶体管(22)的多路复用器的第二传输门(18)。 第一传输门(12)和第二传输门(18)各自接收来自逆变器(24)的控制信号C和反相控制信号。 第一传输门(12)接收第一输入信号(A),第二传输门(18)接收第二输入信号(B)。 基站装置(10)从第一传输门(12)和第二传输门(18)产生公共输出信号(O)。 基站装置(10)能够执行所有两个输入功能操作。