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91. 发明公开

EP2584623A2 Semiconductor nanocrystal-polymer composite, method of preparing the same, and composite film and optoelectronic device including the same 有权
标题翻译：半导体纳米晶体的聚合物复合材料，其制备方法和复合膜和光电器件，使得处理
公开(公告)号：EP2584623A2
公开(公告)日：2013-04-24
申请号：EP12189290.5
申请日：2012-10-19
申请人： Samsung Electronics Co., Ltd
发明人： Jun, Shin Ae , Kang, Hyun A. , Jang, Eun Joo , Kwon, Soo Kyung , Jang, Hyo Sook
IPC分类号： H01L51/00 , C01B19/00 , C09K11/02 , C09K11/56 , H01L33/00 , B82Y20/00 , H01L51/50
CPC分类号： H01L51/0043 , B82Y30/00 , C01B17/20 , C01B19/007 , C01P2002/88 , C01P2004/64 , C01P2004/84 , C09K11/02 , C09K11/025 , C09K11/565 , C09K11/883 , H01L33/501 , H01L33/502 , H01L33/507 , H01L51/004 , H01L51/50 , H01L2224/16145 , H01L2224/48091 , H01L2924/00014
摘要： A semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal, a polymer comprising a plurality of carboxylate anion groups (-COO - ) bindable to a surface of the semiconductor nanocrystal, and a metal cation bindable to a carboxylate anion group of the plurality of carboxylate anion groups.
摘要翻译：一种半导体纳米晶体 - 聚合物复合材料，包括半导体纳米晶体，聚合物包括羧酸根阴离子基团的多个（COO - ）可绑定到所述半导体纳米晶体的表面上，和金属阳离子可绑定到一个羧酸根阴离子基团的羧酸根阴离子的多个组。

92. 发明公开

EP2570383A1 METHOD FOR PREPARING QUANTUM DOTS OF LEAD SELENIDE 有权
标题翻译： VERFAHREN ZUR ERZEUGUNG VON BLEISELENID-QUANTENPUNKTEN
公开(公告)号：EP2570383A1
公开(公告)日：2013-03-20
申请号：EP10851207.0
申请日：2010-05-11
申请人： Ocean's King Lighting Science&Technology Co., Ltd.
发明人： ZHOU, Mingjie , WANG, Chun
IPC分类号： C01B19/04 , C01G21/00
CPC分类号： C01B19/007 , B82Y30/00 , C01G21/06 , C01P2004/03 , C01P2004/30 , C01P2004/64
摘要： Provided is a method for preparing quantum dots of lead selenide, comprising the following steps: 1) mixing selenium powder with octadecene, heating with stirring to dissolve the selenium powder fully, maintaining the temperature, then cooling to room temperature to obtain a stock solution of selenium; 2) mixing lead compound, oleic acid, octadecene and benzophenone together, and dissolving to obtain a stock solution of lead, then maintaining the temperature at 130-190°C; 3) adding the stock solution of selenium into the stock solution of lead rapidly, and maintaining the temperature at 100-160°C, after cooling, quantum dots of lead selenide are initially prepared; 4) adding the initially prepared quantum dots of lead selenide into a mixture of toluene and methanol, centrifugating and the supernatant to obtain a precipitate, then redissolving the precipitate with toluene to obtain a transparent solution of quantum dots of pure lead selenide. The method is safe in operation, simple, good in reproducibility and low in cost.
摘要翻译：提供了一种制备硒化铅量子点的方法，包括以下步骤：1）将硒粉与十八碳烯混合，搅拌加热，充分溶解硒粉，保持温度，然后冷却至室温，得到硒; 2）将铅化合物，油酸，十八碳烯和二苯甲酮混合在一起，溶解得到铅原液，然后保持温度在130-190℃; 3）将硒原液快速添加到铅储备溶液中，保持温度在100-160℃，冷却后，首先制备硒化铅的量子点; 4）将最初制备的硒化铅量子点添加到甲苯和甲醇的混合物中，离心分离上清液，得到沉淀物，然后用甲苯再溶解沉淀物，得到纯硒化铅量子点的透明溶液。该方法操作安全，简单，重现性好，成本低。

93. 发明公开

EP2430112A4 MATERIALS AND METHODS FOR THE PREPARATION OF NANOCOMPOSITES 有权
标题翻译：材料和纳米复合材料的生产方法
公开(公告)号：EP2430112A4
公开(公告)日：2012-12-26
申请号：EP10767840
申请日：2010-04-23
申请人： UNIV CHICAGO
发明人： TALAPIN DMITRI V , KOVALENKO MAKSYM V , LEE JONG-SOO , JIANG CHENGYANG
IPC分类号： C09K9/00
CPC分类号： H01L35/16 , B82Y30/00 , B82Y40/00 , C01B19/002 , C01B19/007 , C01P2002/52 , C01P2002/72 , C01P2002/84 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/16 , C09D1/00 , C09D5/22 , C09D5/24 , C09K11/025 , C09K11/562 , C09K11/565 , C09K11/883 , C30B7/00 , C30B29/40 , C30B29/46 , C30B29/60 , H01B1/06 , H01B1/10
摘要： Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a solution of the same, a method for making the same from a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, imaging devices, phase change layers, and sensor devices.

94. 发明公开

EP1874686A4 PROCESS AND APPARATUS FOR PRODUCING INORGANIC FULLERENE-LIKE NANOPARTICLES 有权转让
标题翻译：方法和设备用于生产无机FULLER-样纳米颗粒
公开(公告)号：EP1874686A4
公开(公告)日：2012-12-05
申请号：EP06728235
申请日：2006-04-06
申请人： YEDA RES & DEV , A Y Y T TECHNOLOGICAL APPLIC AND DATA UPDAT
发明人： TENNE RESHEF , MARGOLIN ALEXANDER , POPOVITZ-BIRO RONIT , RAPOPORT LEV
IPC分类号： C01B31/02 , B01J19/00 , B82Y30/00 , C01B19/00 , C01G1/12 , C01G23/00 , C01G39/06 , C01G41/00
CPC分类号： B01J19/0013 , B01J2219/182 , B82Y30/00 , C01B19/007 , C01G1/12 , C01G23/007 , C01G39/06 , C01G41/00 , C01P2004/34 , C01P2004/62 , C01P2004/64 , Y10S977/734 , Y10S977/773 , Y10S977/775 , Y10S977/81
摘要： The present invention provides a process for obtaining fullerene-like metal chalcogenide nanoparticles, comprising feeding a metal precursor selected from metal halide, metal carbonyl, organo-metallic compound and metal oxyhalide vapor into a reaction chamber towards a reaction zone to interact with a flow of at least one chalcogen material in gas phase, the temperature conditions in said reaction zone being such to enable the formation of the fullerene-like metal chalcogenide nanoparticles product. The present invention further provides novel IF metal chalcogenides nanoparticles with spherical shape and optionally having a very small or no hollow core exhibiting excellent tribological behaviour. The present invention further provides an apparatus for preparing various IF nanostructures.

95. 发明公开

EP2059391A4 NANOCRYSTAL DOPED MATRIXES 有权转让
标题翻译： NANOKRISTALLDOTIERTE MATRIXES
公开(公告)号：EP2059391A4
公开(公告)日：2011-09-21
申请号：EP07810704
申请日：2007-07-23
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： PARCE J WALLACE , BERNATIS PAUL , DUBROW ROBERT , FREEMAN WILLIAM P , GAMORAS JOEL , KAN SHIHAI , MEISEL ANDREAS , QIAN BAIXIN , WHITEFORD JEFFERY A , ZIEBARTH JONATHAN
IPC分类号： B32B33/00 , B82B1/00 , H01L33/50
CPC分类号： C09K11/02 , B82Y20/00 , B82Y30/00 , C01B19/007 , C01G9/08 , C01P2002/72 , C01P2002/84 , C01P2004/04 , C01P2004/64 , C01P2004/80 , C01P2004/84 , C09K11/565 , C09K11/70 , C09K11/883 , G02B1/11 , G02B3/0087 , G02B2207/101 , H01L33/502 , Y10S977/783

96. 发明公开

EP2337763A2 METHODS FOR PREPARATION OF NANOCRYSTALS USING A WEAK ELECTRON TRANSFER AGENT AND MISMATCHED SHELL PRECURSORS 审中-公开
标题翻译：工艺的制备纳米晶体使用弱电子转移ACTIVE和错误的CASE前体
公开(公告)号：EP2337763A2
公开(公告)日：2011-06-29
申请号：EP09818599.4
申请日：2009-10-02
申请人： Life Technologies Corporation
发明人： TULSKY, Eric , BARTEL, Joseph , TREADWAY, Joseph
IPC分类号： B82B3/00
CPC分类号： B22F9/24 , B22F1/02 , B82Y30/00 , C01B17/20 , C01B19/007 , C01P2004/62 , C01P2004/64 , C01P2004/84
摘要： Methods for preparing core/shell nanocrystals are provided, using mismatched shell precursors and an electron transfer agent to control the nucleation and growth phases of particle formation. One method includes forming a reaction mixture comprising a plurality of nanocrystals, a first shell precursor, a second shell precursor, a weak electron transfer agent, and optionally a solvent, wherein, the first shell precursor and the second shell precursor have different oxidation states; and heating the reaction mixture to a temperature high enough to induce formation of the shell on each of the plurality of nanocrystals.

97. 发明公开

EP2292718A3 Interfused nanocrystals and method of preparing the same 审中-公开
标题翻译：融合纳米晶体及其制备方法
公开(公告)号：EP2292718A3
公开(公告)日：2011-06-22
申请号：EP10186278.7
申请日：2005-11-02
申请人： Samsung Electronics Co., Ltd
发明人： Jun, Shin Ae , Jang, Eun Joo , Choi, Seong Jae
IPC分类号： C09K11/56 , H05B33/14 , H01L51/50
CPC分类号： C01B19/007 , B82Y20/00 , B82Y30/00 , C01P2002/84 , C01P2004/04 , C01P2004/64 , C01P2004/80 , C01P2004/88 , C09K11/565 , C30B7/00 , C30B7/005 , H01L51/5012 , H01L51/502 , H01L51/5096 , H05B33/14
摘要： Interfused nanocrystals including two or more materials, further including an alloy layer formed of the two or more materials. In addition, a method of preparing the interfused nanocrystals. In the interfused nanocrystals, the alloy layer may be present at the interface between the two or more nanocrystals, thus increasing the material stability. A material having excellent quantum efficiency in the blue light range may be synthesized.

98. 发明公开

EP2250126A2 DOTIERTE ZINNTELLURIDE FÜR THERMOELEKTRISCHE ANWENDUNGEN 审中-公开
标题翻译：掺杂ZINNTELLURIDE热电应用
公开(公告)号：EP2250126A2
公开(公告)日：2010-11-17
申请号：EP09708165.7
申请日：2009-02-05
申请人： BASF SE
发明人： HAASS, Frank
IPC分类号： C01B19/00 , H01L23/38 , H01L35/16 , H01L35/34
CPC分类号： C01B19/002 , C01B19/007 , C01P2006/40 , H01L23/38 , H01L35/16 , H01L35/34 , H01L2924/0002 , Y02P20/129 , H01L2924/00
摘要： The p- or n-conductive semiconductor material contains a compound of general formula (I) Sn
a Pb
1-a-(x1+... +xn) A
1
x1 ...A
n
xn (Te
1-p-q-r Se
p S
q X
r )
1+z in which 0.05 1 ... A
n differ from one another and are selected from the group of elements Li, Na, K, Rb, Cs, Mg, Ca, Y, Ti, Zr, Hf, Nb, Ta, Cr, Mn, Fe, Cu, Ag, Au, Ga, In, Tl, Ge, Sb, Bi X F, Cl, Br or l, 0 ≤ p ≤ 1, 0 ≤ q ≤ 1, 0 ≤ r ≤ 0.01, - 0.01 ≤ z ≤ 0.01, with the proviso that p + q + r ≤ 1 and a + x1 +... + xn ≤ 1. The invention also relates to a method for producing a semiconductor material of this type, to a thermoelectric generator or Peltier arrangement and to the use of the same.

99. 发明公开

EP1985583A3 Method for preparing metal phosphide nanocrystal from phosphite compound and method for passivating nanocrystal core with the same 审中-公开
标题翻译：一种用于在亚磷酸酯化合物和方法的其上的用于纳米晶体核的钝化基于制备Metallphosphidnanokristallen的过程
公开(公告)号：EP1985583A3
公开(公告)日：2010-08-04
申请号：EP08154444.7
申请日：2008-04-11
申请人： Samsung Electronics Co., Ltd.
发明人： JUN, Shin Ae, c/o Samsung Advanced Institute of Technology , JANG, Eun Joo, c/o Samsung Advanced Institute of Technology , LIM, Jung Eun, c/o Samsung Advanced Institute of Technology
IPC分类号： C01B19/00 , C01G11/02 , C01B25/08 , C09K11/70 , C01G15/00
CPC分类号： C01B19/007 , B82Y30/00 , C01B25/08 , C01B25/082 , C01G11/02 , C01P2002/84 , C01P2004/04 , C01P2004/64 , C01P2004/80 , C09K11/02 , C09K11/565 , C09K11/70 , C09K11/883 , Y10T428/2982
摘要： Disclosed herein is a method for the preparation of metal phosphide nanocrystals using a phosphite compound as a phosphorous precursor. More specifically, disclosed herein is a method for preparing metal phosphide nanocrystals by reacting a metal precursor with a phosphite compound in a solvent. A method is also provided for passivating a metal phosphide layer on the surface of a nanocrystal core by reacting a metal precursor with a phosphite compound in a solvent. The metal phosphide nanocrystals have uniform particle sizes and various shapes.

100. 发明公开

EP1872415A4 METAL OXIDE SEMICONDUCTOR FILMS, STRUCTURES AND METHODS 审中-公开
标题翻译：金属 - 半导体薄膜，结构和程序
公开(公告)号：EP1872415A4
公开(公告)日：2010-06-23
申请号：EP06740030
申请日：2006-03-28
申请人： MOXTRONICS INC
发明人： RYU YUNGRYEL , WHITE HENRY W , LEE TAE-SEOK
IPC分类号： H01L29/08 , H01L21/02 , H01L21/36 , H01L29/10 , H01L29/12 , H01L29/18 , H01L33/28
CPC分类号： H01L33/28 , C01B19/002 , C01B19/007 , C01G9/00 , C01G11/00 , C01G11/006 , C30B23/02 , C30B25/02 , C30B29/16 , C30B29/46 , H01L21/0237 , H01L21/0242 , H01L21/02554 , H01L21/0256 , H01L21/02565 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/02617 , H01L29/22 , H01L29/221 , H01S5/0213 , H01S5/3018

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