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    • 99. 发明授权
    • BYTE WRITE ERROR CODE METHOD AND APPARATUS
    • BYTE写错误代码方法和设备
    • EP0332662B1
    • 1995-03-01
    • EP88904317.0
    • 1988-04-29
    • DIGITAL EQUIPMENT CORPORATION
    • SMELSER, Donald, W.STEGEMAN, James, C.CHISVIN, Lawrence, A.
    • G06F11/10H03M13/00
    • G06F11/1056H03M13/00H03M13/13
    • A method and apparatus for error detection is disclosed. A data word (54) and its check bits (56) are read from memory (16), and new check bits (60) are generated from the data word (54) read. A logical operation (62) is performed between the new check bits (60) and the check bits (56) read from memory (16) to generate a syndrome (64). The syndrome (64) is decoded to detect the presence or absence of an uncorrectable error. If an uncorrectable error is detected, a logical operation (120) is performed between the new check bits (56) and a byte write error code (116) to generate a third set of check bits, which are then written into memory (16) along with the data word.
    • 公开了一种用于错误检测的方法和设备。 从存储器(16)读取数据字(54)及其校验位(56),并且从读取的数据字(54)产生新的校验位(60)。 在新的校验位(60)和从存储器(16)读取的校验位(56)之间执行逻辑运算(62)以产生校正子(64)。 综合征(64)被解码以检测是否存在不可纠正的错误。 如果检测到不可纠正的错误,则在新的校验位(56)和字节写入错误码(116)之间执行逻辑操作(120)以生成第三组校验位,然后将其写入存储器(16) 以及数据字。
    • 100. 发明公开
    • Planarization process for IC trench isolation using oxidised polysilicon filler
    • 一种用于平坦化用的多晶硅填充料的集成电路中形成隔离沟槽的方法。
    • EP0637071A2
    • 1995-02-01
    • EP94305322.3
    • 1994-07-20
    • DIGITAL EQUIPMENT CORPORATION
    • Nasr, Andre Ilyas,Cooperman, Steven Scott
    • H01L21/306H01L21/3105H01L21/76
    • H01L21/763
    • Disclosed is a method of planarizing the surface of a silicon wafer in integrated circuit manufacture where trench isolation techniques are employed. The trenches (20-23) and active areas (31-34) on a semiconductor substrate (10) are conformally coated with a layer (15) of silicon oxide. A layer of patterned polysilicon then is deposited on top of the oxide and etched to create filler blocks (30) in depressions above the trenches. Next, the polysilicon is annealed to thereby fill the trenches with an expanded oxide block. The resulting relatively planar surface then is polished back to the nitride cap, to thereby produce a high degree of planarity across all trench and active area dimensions.
    • 平面化的半导体基板包括形成在表面上平坦有源区台面和沟槽(31,32,33,34),沉积保形电介质,或电介质前体,在所述面(15)在形成沟槽上述凹部,以及沉积层 的硅(25)移到该。 在Si与光致抗蚀剂图案化以形成抗蚀剂在凹陷块(30)中,Si蚀刻到离开合成块下方段中,Si退火以将其转换为氧化物,和抛光至有源区的顶部的面,得到一个 平坦的表面。 这样一种被如对上述Si衬底,以将电介质为二氧化硅的方法,多晶Si层,然后沉积具有厚度的凹部的一半的深度,然后平面化如上述进行。