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1. 发明公开

EP0924320A3 Method of fabricating a copper plated aluminium wire, a plated aluminium wire, an insulating plated aluminium wire, methods of fabricating thereof, and a composite lightweighted plated aluminium wire 有权
标题翻译：一种用于生产铜包铝线的方法，包铝线，绝缘的，包铝线，制造方法，和更容易包层复合铝线
公开(公告)号：EP0924320A3
公开(公告)日：2001-09-12
申请号：EP98308393.2
申请日：1998-10-14
申请人： Totoku Electric Co., Ltd.
发明人： Kitazawa, Hiroshi , Yamaguchi, Tatsuo , Tsukada, Etsuro
IPC分类号： C25D5/44 , C25D5/10 , C25D5/50
CPC分类号： H01L24/45 , C25D5/10 , C25D5/44 , C25D5/50 , H01L24/43 , H01L2224/43 , H01L2224/431 , H01L2224/45015 , H01L2224/45118 , H01L2224/45124 , H01L2224/45573 , H01L2224/45574 , H01L2224/45601 , H01L2224/45618 , H01L2224/45624 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/4566 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/45671 , H01L2924/00014 , H01L2924/01006 , H01L2924/01012 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , Y10T29/49117 , H01L2924/0132 , H01L2924/01201 , H01L2924/01026 , H01L2924/01025 , H01L2924/01024 , H01L2924/01022 , H01L2924/013 , H01L2924/00 , H01L2224/48 , H01L2924/0002
摘要： A copper plated aluminum wire improved in the adhesion is fabricated by a method which comprises a zinc displacement step of forming a zinc thin layer by zinc displacement on the surface of an aluminum or aluminum alloy conductor, an electroplating step of coating the surface of the zinc thin layer continuously with copper layers by electroplating to have a copper coated aluminum conductor, and a thermal diffusion step of heat treating the copper coated aluminum conductor at a temperature of 120 °C to 600 °C under an inert gas atmosphere for thermal diffusion to ease the electrodeposition stress. Accordingly, the resultant copper plated aluminum wire can easily be shaped by cold plastic working process, decreased in the diameter at higher efficiency, and improved in the power of adhesion. A plated aluminum wire is provided comprising an anchor metal layer by displacement plating, a low thermally conductive metal layer by electroplating, and a high electrically conductive metal layer by electroplating which all are deposited in a sequence on the outer surface an aluminum or aluminum alloy conductor. Accordingly, the resultant plated aluminum wire or insulating plated aluminum wire can be minimized in the overall weight and prevented from disconnection caused by thermal diffusion. A plated aluminum wire is provided comprising an anchor metal layer by displacement plating and a high electrically conductive metal layer by electroplating which both are deposited in a sequence on the outer surface an aluminum or aluminum alloy conductor. Accordingly, the resultant plated aluminum wire or insulating plated aluminum wire can be minimized in the overall weight. A composite light-weighted plated wire is provided having an electrically conductive metal layer, which has a potential equal to or higher than that of zinc, deposited by electroplating on the outer surface of a zinc anchor metal layer provided on an aluminum conductor, said electroplating carried out under a condition that the concentration of hydrogen ion in an electrolyte solution is higher than 4 (pH) as an electrolysis parameter and the thickness of plating x (micrometer) is 0.2 Accordingly, the resultant composite light-weighted plated wire can be improved in the adhesion between the aluminum conductor and the electrically conductive metal layer, easily shaped by plastic forming process, decreased in the diameter at higher efficiency, and improved in the reliability of soldering work.
摘要翻译：镀铜铝线材在粘合改进通过包括铝或铝合金导体的表面上形成由锌置换锌薄层的锌置换步骤，以电镀锌的表面上涂覆的步骤的方法制造薄层连续铜层通过电镀以具有铜涂覆的铝导体，以及热处理的铜涂覆的铝导体在120℃至600℃的温度下在惰性气体气氛中对热扩散来缓解下热扩散步骤电沉积压力。因此，所得到的铜镀铝导线可以很容易地通过冷塑性加工工艺来成形，减少在较高效率的直径，并且在粘合性的功率提高。本发明提供一种镀敷铝电线，包括通过置换镀敷锚定金属层，通过电镀低导热金属层，和高导电性金属层，通过电镀，所有被沉积在一个序列中的铝或铝合金导体的外表面上，因此，所得到的镀铝导线或绝缘的镀铝导线可以在整体重量被最小化，并从断开由热扩散引起的防止。本发明提供一种镀敷铝电线，包括通过置换镀覆的锚定金属层和通过电镀高导电性金属层，其两者都沉积在序列铝或铝合金导体的外表面上。因此，所得到的镀铝导线或绝缘的镀铝导线可以在整体重量被最小化。本发明提供一种复合材料重量轻的镀线具有导电金属层，其具有的电势等于或高于锌的高，通过电镀在铝导体设置在锌锚金属层的外表面上沉积，所述电镀的条件下进行确实氢离子的电解质的溶液中的浓度是小于4（pH值）更高，因为电解参数和电镀X（微米）的厚度为0.2

2. 发明公开

EP1677345A1 BONDING WIRE AND INTEGRATED CIRCUIT DEVICE USING THE SAME 审中-公开
标题翻译： BONDIERUNGS-DRAHT UND INTEGRIERTES SCHALTUNGSBAUELEMENT DAMIT
公开(公告)号：EP1677345A1
公开(公告)日：2006-07-05
申请号：EP04773800.0
申请日：2004-10-13
申请人： Sumitomo Electric Industries, Ltd.
发明人： KAIMORI, S., Osaka Works Sumitomo Elect. Ind.Ltd. , NONAKA, Tsuyoshi, Sumitomo Electric Wintec, Inc. , IOKA, Masanori, Sumitomo Electric Wintec, Inc.
IPC分类号： H01L21/60
CPC分类号： H01L24/85 , B23K20/007 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/78 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45611 , H01L2224/45618 , H01L2224/45623 , H01L2224/45624 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45649 , H01L2224/45655 , H01L2224/45657 , H01L2224/4566 , H01L2224/45663 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/4567 , H01L2224/45671 , H01L2224/45673 , H01L2224/45676 , H01L2224/45678 , H01L2224/45683 , H01L2224/48091 , H01L2224/48247 , H01L2224/48463 , H01L2224/48639 , H01L2224/48839 , H01L2224/78301 , H01L2224/85205 , H01L2224/85439 , H01L2924/00011 , H01L2924/01204 , H01L2924/01206 , H01L2924/14 , H01L2924/15747 , H01L2924/20752 , H01L2924/00014 , H01L2924/01004 , H01L2924/0105 , H01L2924/0103 , H01L2924/0104 , H01L2924/01047 , H01L2924/01024 , H01L2924/01026 , H01L2924/01008 , H01L2924/01016 , H01L2924/01001 , H01L2924/01029 , H01L2924/00 , H01L2924/013 , H01L2924/20751 , H01L2924/20753 , H01L2924/20754 , H01L2924/00015 , H01L2924/01076 , H01L2924/01006
摘要： A bonding wire comprising a core and a coating layer formed on the core, wherein the coating layer is formed from a metal having a higher melting point than the core, and further has at least one of the following characteristics;

1. the wet contact angle with the coating layer when the core is melted is not smaller than 20 degrees;
2. when the bonding wire is hung down with its end touching a horizontal surface, and is cut at a point 15 cm above the end and thus let drop onto the horizontal surface, the curvature radius of the formed arc is 35 mm or larger;
3. the 0.2% yield strength is not smaller than 0.115 mN/µm 2 but not greater than 0.165 mN/µm 2 ; or
4. the Vickers hardness of the coating layer is 300 or lower.
摘要翻译：一种接合线，其包括芯和形成在所述芯上的涂层，其中所述涂层由具有比所述芯更高的熔点的金属形成，并且还具有以下特征中的至少一个：当芯熔化时与涂层的湿接触角不小于20度; 2.当接合线悬挂时，其端部接触水平表面，并在端部上方15厘米处切割，因此落在水平表面上，所形成的弧的曲率半径为35毫米或更大; 0.2％屈服强度不小于0.115mN /μm2但不大于0.165mN /μm2; 或4.涂层的维氏硬度为300以下。

3. 发明公开

EP2822029A1 POWER SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND BONDING WIRE 审中-实审
标题翻译： LEISTUNGSHALBLEITERVORRICHTUNG，HERSTELLUNGSVERFAHRENDAFÜRUND BONDDRAHT
公开(公告)号：EP2822029A1
公开(公告)日：2015-01-07
申请号：EP13754800.4
申请日：2013-02-22
申请人： Nippon Micrometal Corporation , WASEDA UNIVERSITY
发明人： TATSUMI, Kohei , YAMADA, Takashi , ODA, Daizo
IPC分类号： H01L21/60 , H01L21/607
CPC分类号： H01L24/05 , H01L24/03 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/03444 , H01L2224/0345 , H01L2224/0346 , H01L2224/04042 , H01L2224/05007 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05172 , H01L2224/05184 , H01L2224/05618 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05672 , H01L2224/05684 , H01L2224/32245 , H01L2224/43 , H01L2224/4312 , H01L2224/43125 , H01L2224/4321 , H01L2224/43848 , H01L2224/43986 , H01L2224/45005 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45611 , H01L2224/45618 , H01L2224/45624 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/45671 , H01L2224/45672 , H01L2224/45684 , H01L2224/45686 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48247 , H01L2224/48463 , H01L2224/48472 , H01L2224/48818 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48866 , H01L2224/48869 , H01L2224/48871 , H01L2224/48872 , H01L2224/48884 , H01L2224/73265 , H01L2224/78313 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/8592 , H01L2924/00011 , H01L2924/00014 , H01L2924/01047 , H01L2924/10253 , H01L2924/10272 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/20103 , H01L2924/351 , H01L2924/00015 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/00012 , H01L2924/00 , H01L2924/01079 , H01L2924/01046 , H01L2924/013 , H01L2924/00013 , H01L2924/01202 , H01L2924/20107 , H01L2924/20106 , H01L2224/29099 , H01L2924/01023 , H01L2924/01074 , H01L2924/01049
摘要： A power semiconductor device, operable regardless of thermal stress generation, which reduces heat generation from a wire, and secures the reliability of a bonding portion when the device is used for dealing with a large amount of current and/or under a high temperature atmosphere, a method of manufacturing the device and a bonding wire. The power semiconductor device comprises a metal electrode on a power semiconductor die and another metal electrode connected by a metal wire using a wedge bonding connection, wherein the metal wire is Ag or a Ag alloy wire having a diameter greater than 50µm and not greater than 2mm, and the metal electrode has thereon one or more metals and/or alloy layers, each of the layers being 50Å or more in thickness, wherein the metal for the layer is selected from Ni, Cr, Cu, Pd, V, Ti, Pt, Zn, Ag, Au, W and Al.
摘要翻译：一种功率半导体器件，其可以在不受热应力产生的情况下操作，这降低了线的发热，并且当该器件用于处理大量电流和/或在高温气氛下时，确保了接合部的可靠性，制造该装置的方法和接合线。功率半导体器件包括功率半导体管芯上的金属电极和使用楔形接合连接的金属线连接的另一金属电极，其中金属线为Ag或直径大于50μm且不大于2mm的Ag合金线金属电极上具有一个或多个金属和/或合金层，每个层的厚度均为50埃以上，其中该层的金属选自Ni，Cr，Cu，Pd，V，Ti，Pt ，Zn，Ag，Au，W和Al。

4. 发明公开

EP0924320A2 Method of fabricating a copper plated aluminium wire, a plated aluminium wire, an insulating plated aluminium wire, methods of fabricating thereof, and a composite lightweighted plated aluminium wire 有权
标题翻译：一种用于生产铜包铝线方法
公开(公告)号：EP0924320A2
公开(公告)日：1999-06-23
申请号：EP98308393.2
申请日：1998-10-14
申请人： Totoku Electric Co., Ltd.
发明人： Kitazawa, Hiroshi , Yamaguchi, Tatsuo , Tsukada, Etsuro
IPC分类号： C25D5/44 , C25D5/10 , C25D5/50
CPC分类号： H01L24/45 , C25D5/10 , C25D5/44 , C25D5/50 , H01L24/43 , H01L2224/43 , H01L2224/431 , H01L2224/45015 , H01L2224/45118 , H01L2224/45124 , H01L2224/45573 , H01L2224/45574 , H01L2224/45601 , H01L2224/45618 , H01L2224/45624 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/4566 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/45671 , H01L2924/00014 , H01L2924/01006 , H01L2924/01012 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , Y10T29/49117 , H01L2924/0132 , H01L2924/01201 , H01L2924/01026 , H01L2924/01025 , H01L2924/01024 , H01L2924/01022 , H01L2924/013 , H01L2924/00 , H01L2224/48 , H01L2924/0002
摘要： A copper plated aluminum wire improved in the adhesion is fabricated by a method which comprises a zinc displacement step of forming a zinc thin layer by zinc displacement on the surface of an aluminum or aluminum alloy conductor, an electroplating step of coating the surface of the zinc thin layer continuously with copper layers by electroplating to have a copper coated aluminum conductor, and a thermal diffusion step of heat treating the copper coated aluminum conductor at a temperature of 120 °C to 600 °C under an inert gas atmosphere for thermal diffusion to ease the electrodeposition stress.
Accordingly, the resultant copper plated aluminum wire can easily be shaped by cold plastic working process, decreased in the diameter at higher efficiency, and improved in the power of adhesion.
A plated aluminum wire is provided comprising an anchor metal layer by displacement plating, a low thermally conductive metal layer by electroplating, and a high electrically conductive metal layer by electroplating which all are deposited in a sequence on the outer surface an aluminum or aluminum alloy conductor.
Accordingly, the resultant plated aluminum wire or insulating plated aluminum wire can be minimized in the overall weight and prevented from disconnection caused by thermal diffusion.
A plated aluminum wire is provided comprising an anchor metal layer by displacement plating and a high electrically conductive metal layer by electroplating which both are deposited in a sequence on the outer surface an aluminum or aluminum alloy conductor.
Accordingly, the resultant plated aluminum wire or insulating plated aluminum wire can be minimized in the overall weight.
A composite light-weighted plated wire is provided having an electrically conductive metal layer, which has a potential equal to or higher than that of zinc, deposited by electroplating on the outer surface of a zinc anchor metal layer provided on an aluminum conductor, said electroplating carried out under a condition that the concentration of hydrogen ion in an electrolyte solution is higher than 4 (pH) as an electrolysis parameter and the thickness of plating x (micrometer) is 0.2
Accordingly, the resultant composite light-weighted plated wire can be improved in the adhesion between the aluminum conductor and the electrically conductive metal layer, easily shaped by plastic forming process, decreased in the diameter at higher efficiency, and improved in the reliability of soldering work.

6. 发明授权

EP0924320B1 Method of fabricating a copper plated aluminium wire 有权
标题翻译： Verfahren zur Herstellung eines verkupferten铝Drahts
公开(公告)号：EP0924320B1
公开(公告)日：2005-06-29
申请号：EP98308393.2
申请日：1998-10-14
申请人： Totoku Electric Co., Ltd.
发明人： Kitazawa, Hiroshi , Yamaguchi, Tatsuo , Tsukada, Etsuro
IPC分类号： C25D5/44 , C25D5/10 , C25D5/50
CPC分类号： H01L24/45 , C25D5/10 , C25D5/44 , C25D5/50 , H01L24/43 , H01L2224/43 , H01L2224/431 , H01L2224/45015 , H01L2224/45118 , H01L2224/45124 , H01L2224/45573 , H01L2224/45574 , H01L2224/45601 , H01L2224/45618 , H01L2224/45624 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/4566 , H01L2224/45664 , H01L2224/45666 , H01L2224/45669 , H01L2224/45671 , H01L2924/00014 , H01L2924/01006 , H01L2924/01012 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , Y10T29/49117 , H01L2924/0132 , H01L2924/01201 , H01L2924/01026 , H01L2924/01025 , H01L2924/01024 , H01L2924/01022 , H01L2924/013 , H01L2924/00 , H01L2224/48 , H01L2924/0002
摘要： A copper plated aluminum wire improved in the adhesion is fabricated by a method which comprises a zinc displacement step of forming a zinc thin layer by zinc displacement on the surface of an aluminum or aluminum alloy conductor, an electroplating step of coating the surface of the zinc thin layer continuously with copper layers by electroplating to have a copper coated aluminum conductor, and a thermal diffusion step of heat treating the copper coated aluminum conductor at a temperature of 120 DEG C to 600 DEG C under an inert gas atmosphere for thermal diffusion to ease the electrodeposition stress. Accordingly, the resultant copper plated aluminum wire can easily be shaped by cold plastic working process, decreased in the diameter at higher efficiency, and improved in the power of adhesion. A plated aluminum wire is provided comprising an anchor metal layer by displacement plating, a low thermally conductive metal layer by electroplating, and a high electrically conductive metal layer by electroplating which all are deposited in a sequence on the outer surface an aluminum or aluminum alloy conductor. Accordingly, the resultant plated aluminum wire or insulating plated aluminum wire can be minimized in the overall weight and prevented from disconnection caused by thermal diffusion. A plated aluminum wire is provided comprising an anchor metal layer by displacement plating and a high electrically conductive metal layer by electroplating which both are deposited in a sequence on the outer surface an aluminum or aluminum alloy conductor. Accordingly, the resultant plated aluminum wire or insulating plated aluminum wire can be minimized in the overall weight. A composite light-weighted plated wire is provided having an electrically conductive metal layer, which has a potential equal to or higher than that of zinc, deposited by electroplating on the outer surface of a zinc anchor metal layer provided on an aluminum conductor, said electroplating carried out under a condition that the concentration of hydrogen ion in an electrolyte solution is higher than 4 (pH) as an electrolysis parameter and the thickness of plating x (micrometer) is 0.2
摘要翻译：通过包括在铝或铝合金导体的表面上通过锌置换形成锌薄层的锌置换步骤的方法制造提高粘合力的镀铜铝线，镀锌表面的电镀步骤通过电镀连续地涂覆铜层以具有铜涂覆的铝导体，以及在惰性气体气氛下在120℃至600℃的温度下热处理镀铜的铝导体以进行热扩散的热扩散步骤以便于放热电沉积应力。因此，所得到的镀铜铝线可以通过冷塑性加工工艺容易地成型，直径减小，效率更高，附着力提高。提供一种电镀铝线，其包括通过移位电镀的锚金属层，通过电镀的低导热金属层，以及通过电镀的高导电金属层，其全部按照顺序沉积在外表面上的铝或铝合金导体。因此，所得到的电镀铝线或绝缘电镀铝线可以在整体重量上最小化并防止由热扩散引起的断开。提供一种电镀铝线，其包括通过移位电镀的锚金属层和通过电镀的高导电金属层，两者都以一个顺序沉积在外表面上的铝或铝合金导体。因此，所得到的电镀铝线或绝缘电镀铝线可以在整体重量上最小化。提供一种具有导电金属层的复合轻量化电镀线，该导电金属层具有等于或高于通过电镀沉积在锌导体上的锌锚金属层外表面上的锌的电位，所述电镀在电解质溶液中的氢离子的浓度高于作为电解参数的4（pH）和镀层厚度x（微米））为0.2

7. 发明公开

EP3121841A4 BONDING WIRE FOR SEMICONDUCTOR DEVICE 有权转让
公开(公告)号：EP3121841A4
公开(公告)日：2018-02-28
申请号：EP15874396
申请日：2015-09-18
申请人： NIPPON MICROMETAL CORP , NIPPON STEEL & SUMIKIN MAT CO
发明人： YAMADA TAKASHI , ODA DAIZO , HAIBARA TERUO , UNO TOMOHIRO
IPC分类号： H01L23/49
CPC分类号： H01L24/45 , H01L2224/05624 , H01L2224/45015 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45609 , H01L2224/45618 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45678 , H01L2224/48011 , H01L2224/48247 , H01L2224/48507 , H01L2224/85065 , H01L2224/85075 , H01L2224/85439 , H01L2924/10253 , H01L2924/1576 , H01L2924/20752 , H01L2924/013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01007 , H01L2924/01001 , H01L2924/01028 , H01L2924/00013 , H01L2924/20656 , H01L2924/01046 , H01L2924/01078 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/0102 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01034 , H01L2924/01045 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01057 , H01L2924/01077 , H01L2924/01083 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204
摘要： There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices. The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170°C or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

8. 发明公开

EP3121841A1 BONDING WIRE FOR SEMICONDUCTOR DEVICE 有权转让
标题翻译：半导体器件的接合线
公开(公告)号：EP3121841A1
公开(公告)日：2017-01-25
申请号：EP15874396.3
申请日：2015-09-18
申请人： Nippon Micrometal Corporation , Nippon Steel & Sumikin Materials Co., Ltd.
发明人： YAMADA, Takashi , ODA, Daizo , HAIBARA, Teruo , UNO, Tomohiro
IPC分类号： H01L21/60
CPC分类号： H01L24/45 , H01L2224/05624 , H01L2224/45015 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45609 , H01L2224/45618 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45678 , H01L2224/48011 , H01L2224/48247 , H01L2224/48507 , H01L2224/85065 , H01L2224/85075 , H01L2224/85439 , H01L2924/10253 , H01L2924/1576 , H01L2924/20752 , H01L2924/013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01007 , H01L2924/01001 , H01L2924/01028 , H01L2924/00013 , H01L2924/20656 , H01L2924/01046 , H01L2924/01078 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/0102 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01034 , H01L2924/01045 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01057 , H01L2924/01077 , H01L2924/01083 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204
摘要： There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices.
The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170°C or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.
摘要翻译：提供一种在其表面上具有Pd涂层的Cu接合线，其提高了球接合部在高温高湿环境下的接合可靠性，并且适用于车载装置。本发明的半导体装置用接合线具有Cu合金芯材和形成于其表面的Pd被覆层，该接合线含有合计量的As，Te，Sn，Sb，Bi，Se中的一种以上的元素 0.1〜100质量ppm。利用该构造，能够增加球接合部在高温高湿环境下的接合寿命，并由此改善接合可靠性。如果Cu合金芯材还含有0.011〜1.2质量％的Ni，Zn，Rh，In，Ir，Pt，Ga和Ge中的一种以上，则能够提高可靠性在170℃以上的高温环境下的球接合部。当在Pd涂层的表面上进一步形成含有Au和Pd的合金表层时，楔形键合性提高。

9. 发明授权

EP1146637B1 Electronic component of a high frequency current suppression type and bonding wire for the same 有权
标题翻译：的电子部件可以在高频电流被抑制，接合线用于
公开(公告)号：EP1146637B1
公开(公告)日：2004-07-28
申请号：EP01108482.9
申请日：2001-04-04
申请人： NEC TOKIN Corporation
发明人： Yoshida, Shigeyoshi, Tokin Corporation , Ono, Hiroshi, Tokin Corporation , Kamei, Koji, Tokin Corporation
IPC分类号： H03H1/00
CPC分类号： H05K1/0233 , H01L23/4952 , H01L23/66 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/745 , H01L2223/6611 , H01L2224/05554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05599 , H01L2224/131 , H01L2224/432 , H01L2224/43826 , H01L2224/43827 , H01L2224/451 , H01L2224/45117 , H01L2224/45118 , H01L2224/45123 , H01L2224/45124 , H01L2224/45138 , H01L2224/45155 , H01L2224/45157 , H01L2224/4516 , H01L2224/45163 , H01L2224/45166 , H01L2224/45179 , H01L2224/45181 , H01L2224/45188 , H01L2224/4554 , H01L2224/456 , H01L2224/45617 , H01L2224/45618 , H01L2224/45623 , H01L2224/45624 , H01L2224/45655 , H01L2224/45657 , H01L2224/4566 , H01L2224/45663 , H01L2224/45666 , H01L2224/45679 , H01L2224/45681 , H01L2224/45686 , H01L2224/45693 , H01L2224/48091 , H01L2224/48247 , H01L2224/49175 , H01L2224/745 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01032 , H01L2924/01038 , H01L2924/01039 , H01L2924/01041 , H01L2924/01072 , H01L2924/01073 , H01L2924/01105 , H01L2924/014 , H01L2924/10161 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/19042 , H01L2924/30107 , H01L2924/3011 , H03H2001/0092 , H01L2924/00 , H01L2924/00012 , H01L2924/013 , H01L2924/01008 , H01L2924/01009 , H01L2924/049 , H01L2924/053 , H01L2224/45015 , H01L2924/207
摘要： In order to provide an electronic component of a high frequency current suppression type, which can completely suppress a high frequency current to prevent an electromagnetic interference from occurring even when it is used at a high frequency, and a bonding wire for the same, the semiconductor integrated circuit device (IC) (17) operates at a high speed in using at a high frequency band, and a predetermined number of terminals (19) are provided with a high frequency current suppressor (21) for attenuating a high frequency current passing through the terminals themselves. This high frequency current suppressor (21) is a thin film magnetic substance having a range from 0.3 to 20 ( mu m) in thickness, and is disposed on the entire surface of each terminal (19), covering a mounting portion to be mounted on a printed wiring circuit board (23) for mounting IC (17) and an edge including a connecting portion to a conductive pattern (25) disposed on the printed wiring circuit board (23). When the top end is connected with the conductive pattern (25) by means of a solder (27) in mounting the printed wiring circuit board (23) of IC (17), the vicinity of the mounting portion has conductivity in a using frequency band, which is less than a few tens MHz.
摘要翻译：为了提供一种高频电流抑制型，其可以完全呼叫抑制高频电流，以防止电磁干扰的发生，即使当以高频率使用的电子部件，并且对于相同的，半导体的接合线集成电路装置（IC）（17）进行操作以高速在使用在高频带，并设置有一个高频电流抑制器（21），用于衰减流过的高频电流端子的预定数目（19）自身终端。该高频电流抑制器（21）是具有从0.3到在厚度为20（微米）的范围内的薄膜磁性物质，并且设置在每个终端（19）的整个表面上，覆盖安装部被安装在的印刷布线电路板（23），用于安装IC（17）和上边缘包括一连接部分，以设置在印刷布线电路板（23）的导体图案（25）。当顶端与导体图案（25）通过在IC的印刷布线电路基板（23）（17）的安装的焊料（27）连接，所述安装部的附近具有在使用频率带导电，所有小于几十MHz。

10. 发明公开

EP1146637A1 Electronic component of a high frequency current suppression type and bonding wire for the same 有权
标题翻译：的电子部件可以在高频电流被抑制，接合线用于
公开(公告)号：EP1146637A1
公开(公告)日：2001-10-17
申请号：EP01108482.9
申请日：2001-04-04
申请人： TOKIN CORPORATION
发明人： Yoshida, Shigeyoshi, Tokin Corporation , Ono, Hiroshi, Tokin Corporation , Kamei, Koji, Tokin Corporation
IPC分类号： H03H1/00
CPC分类号： H05K1/0233 , H01L23/4952 , H01L23/66 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/745 , H01L2223/6611 , H01L2224/05554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05599 , H01L2224/131 , H01L2224/432 , H01L2224/43826 , H01L2224/43827 , H01L2224/451 , H01L2224/45117 , H01L2224/45118 , H01L2224/45123 , H01L2224/45124 , H01L2224/45138 , H01L2224/45155 , H01L2224/45157 , H01L2224/4516 , H01L2224/45163 , H01L2224/45166 , H01L2224/45179 , H01L2224/45181 , H01L2224/45188 , H01L2224/4554 , H01L2224/456 , H01L2224/45617 , H01L2224/45618 , H01L2224/45623 , H01L2224/45624 , H01L2224/45655 , H01L2224/45657 , H01L2224/4566 , H01L2224/45663 , H01L2224/45666 , H01L2224/45679 , H01L2224/45681 , H01L2224/45686 , H01L2224/45693 , H01L2224/48091 , H01L2224/48247 , H01L2224/49175 , H01L2224/745 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/0103 , H01L2924/01032 , H01L2924/01038 , H01L2924/01039 , H01L2924/01041 , H01L2924/01072 , H01L2924/01073 , H01L2924/01105 , H01L2924/014 , H01L2924/10161 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/19042 , H01L2924/30107 , H01L2924/3011 , H03H2001/0092 , H01L2924/00 , H01L2924/00012 , H01L2924/013 , H01L2924/01008 , H01L2924/01009 , H01L2924/049 , H01L2924/053 , H01L2224/45015 , H01L2924/207
摘要： In order to provide an electronic component of a high frequency current suppression type, which can completely suppress a high frequency current to prevent an electromagnetic interference from occurring even when it is used at a high frequency, and a bonding wire for the same, the semiconductor integrated circuit device (IC) (17) operates at a high speed in using at a high frequency band, and a predetermined number of terminals (19) are provided with a high frequency current suppressor (21) for attenuating a high frequency current passing through the terminals themselves. This high frequency current suppressor (21) is a thin film magnetic substance having a range from 0.3 to 20 (µm) in thickness, and is disposed on the entire surface of each terminal (19), covering a mounting portion to be mounted on a printed wiring circuit board (23) for mounting IC (17) and an edge including a connecting portion to a conductive pattern (25) disposed on the printed wiring circuit board (23). When the top end is connected with the conductive pattern (25) by means of a solder (27) in mounting the printed wiring circuit board (23) of IC (17), the vicinity of the mounting portion has conductivity in a using frequency band, which is less than a few tens MHz.

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