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    • 4. 发明公开
    • METHOD FOR MANUFACTURING TUNGSTEN-BASED CAPACITOR ELEMENT
    • VERFAHREN ZUR HERSTELLUNG EINES KONDENSATOREMENTS AUF WOLFRAMBASIS
    • EP3139393A1
    • 2017-03-08
    • EP15785625.3
    • 2015-01-20
    • Showa Denko K.K.
    • NAITO KazumiTAMURA Katsutoshi
    • H01G9/04H01G9/00H01G9/042H01G9/052
    • H01G9/0032H01G9/00H01G9/04H01G9/042H01G9/052H01G9/0525H01G9/055H01G9/07
    • The present invention provides a method for producing a capacitor element having good LC characteristics, wherein, after a chemical conversion process to form a dielectric layer on the surface layer of an anode body obtained by forming a powder mainly comprising tungsten, followed by sintering, a semiconductor layer and a conductor layer are sequentially formed on the dielectric layer; an etching process is conducted before forming the dielectric layer to remove a natural oxide film formed on the surface layer on the outer surface and on the surface inside the pores of the anode body so as to adjust the film thickness to a range of 0.5 to 5.0 nm; and the chemical conversion process is conducted at a temperature from -4 to 18°C for 7 to 110 minutes after reaching a predetermined voltage.
    • 本发明提供一种具有良好LC特性的电容器元件的制造方法,其中,在通过形成主要包含钨的粉末而获得的阳极体的表面层上形成电介质层的化学转化处理之后,进行烧结, 半导体层和导体层依次形成在电介质层上; 在形成电介质层之前进行蚀刻工艺以除去形成在阳极体的外表面和表面上的表面层上的自然氧化膜,以将膜厚度调节至0.5至5.0的范围 纳米; 并且在达到预定电压之后,在-4至18℃的温度下进行化学转化处理7至110分钟。
    • 9. 发明公开
    • CAPACITOR ELEMENT
    • KONDENSATORELEMENT
    • EP2866237A1
    • 2015-04-29
    • EP13806979.4
    • 2013-04-09
    • Showa Denko K.K.
    • NAITO, KazumiYABE, Shouji
    • H01G9/04H01G9/00H01G9/052
    • H01G9/042H01G9/04H01G9/052H01G9/07H01G9/15Y10T29/417
    • A capacitor element having a high capacitance in a high frequency range and less current leakage, and comprising at least an anode body composed of a sintered compact comprising tungsten as a main component, a dielectric layer with a smooth surface formed by chemical conversion of the surface of the anode body, and a semiconductor layer laminated on the dielectric layer, is obtained by a production method comprising the steps of chemically converting the surface layer of the tungsten powder sintered compact into the dielectric layer in an aqueous solution containing 0.05 to 12 % by mass of an oxidant composed of an oxygen-containing compound at a solution temperature of 62 °C or less, and removing all or most of water adhering to the inner surface of pores, etc., at a temperature of less than the boiling point of water, followed by drying at a temperature of not less than the boiling point of water.
    • 一种电容器元件,其在高频范围内具有高电容并且具有较少的电流泄漏,并且至少包括由包含钨作为主要成分的烧结体构成的阳极体,具有由表面化学转化形成的光滑表面的电介质层 的阳极体和层叠在电介质层上的半导体层的制造方法,其特征在于,包括以下步骤:将所述钨粉末烧结体的表面层化学转化为含有0.05〜12%的水溶液的电介质层, 在62℃或更低的溶液温度下由含氧化合物组成的氧化剂的质量,并且在小于沸点的沸点的温度下去除附着在孔内表面上的全部或大部分水 水,然后在不低于水的沸点的温度下干燥。