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1. 发明公开

EP2515328A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权转让
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS
公开(公告)号：EP2515328A1
公开(公告)日：2012-10-24
申请号：EP09852269.1
申请日：2009-12-15
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： IWASAKI Shinya , KAMEI Akira
IPC分类号： H01L21/336 , H01L21/266 , H01L21/76 , H01L21/8234 , H01L27/04 , H01L27/06 , H01L27/088 , H01L29/739 , H01L29/78
CPC分类号： H01L29/861 , H01L21/263 , H01L21/266 , H01L21/761 , H01L27/0727 , H01L29/32 , H01L29/7397
摘要： Provided is a method of manufacturing a semiconductor device capable of preventing a relative displacement of the positions between a range where impurity ions are injected and a range where charged particles are injected. The method of manufacturing the semiconductor device includes: an impurity ion injecting step of irradiating impurity ions in a state in which a mask is disposed between an impurity ion irradiation apparatus and a semiconductor substrate; and a charged particle injecting step of irradiating charged particles to form a short carrier lifetime region, in a state in which the mask is disposed between a charged particle irradiation apparatus and the semiconductor substrate. A relative positional relationship between the mask and the semiconductor substrate is not changed from a beginning of one of the to a completion of both of the impurity ion injecting step and the charged particle injecting step.
摘要翻译：提供一种制造能够防止在注入杂质离子的范围之间的位置与注入带电粒子的范围之间的相对位移的半导体器件的方法。半导体装置的制造方法包括：在杂质离子照射装置与半导体基板之间设置掩模的状态下照射杂质离子的杂质离子注入工序; 以及在掩模设置在带电粒子照射装置和半导体基板之间的状态下照射带电粒子以形成短的载流子寿命区域的带电粒子注入步骤。掩模和半导体衬底之间的相对位置关系从杂质离子注入步骤和带电粒子注入步骤之间的一个开始到完成都不改变。

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