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1. 发明专利

ZA200803754B Crucible for the crystallization of silicon and process for making the same 未知
公开(公告)号：ZA200803754B
公开(公告)日：2009-09-30
申请号：ZA200803754
申请日：2006-10-06
申请人： VESUVIUS CRUCIBLE CO
发明人： GILBERT RANCOULE
IPC分类号： C04B20090101 , C30B20090101
摘要： A protective coating is prepared for, and applied to, crucibles used in the handling of molten materials that are solidified in the crucible and then removed as ingots. Crucibles containing this protective coating may be used for the solidification of silicon. The coating has a specified oxygen content and contains a mineral binder and silicon nitride or silicon oxynitride.

2. 发明专利

ZA200800436B Semiconducting nanoparticles with surface modification 未知
公开(公告)号：ZA200800436B
公开(公告)日：2009-09-30
申请号：ZA200800436
申请日：2006-06-29
申请人： UNIV CAPE TOWN
发明人： THOMAS BRITTON DAVID , MARGIT HAERTING
IPC分类号： B82B20090101 , C30B20090101 , H01L20090101
摘要： The invention relates to semiconducting nanoparticles. The nanoparticles of the invention comprise a single element or a compound of elements in one or more of groups II, III, IV, V, VI. The nanoparticles have a size in the range of 1 nm to 500 nm, and comprise from 0.1 to 20 atomic percent of oxygen or hydrogen. The nanoparticles are typically formed by comminution of bulk high purity silicon. One application of the nanoparticles is in the preparation of inks which can be used to define active layers or structures of semiconductor devices by simple printing methods.

3. 发明专利

ZA200707972B Process for the production of SI by reduction of SICLJ with liquid ZN 未知
公开(公告)号：ZA200707972B
公开(公告)日：2008-11-26
申请号：ZA200707972
申请日：2006-03-24
申请人： UMICORE NV
发明人： ERIC ROBERT , TJAKKO ZIJLEMA
IPC分类号： C01B20090101 , C30B20090101

4. 发明专利

ZA200711056B Crucible for the crystallization of silicon 未知
公开(公告)号：ZA200711056B
公开(公告)日：2009-04-29
申请号：ZA200711056
申请日：2006-06-30
申请人： VESUVIUS CRUCIBLE CO
发明人： GILBERT RANCOULE
IPC分类号： C30B20090101
摘要： The invention relates to a crucible for the crystallization of silicon and to the preparation and application of release coatings for crucibles used in the handling of molten materials that are solidified in the crucible and then removed as ingots, and more particularly to release coatings for crucibles used in the solidification of polycrystalline silicon. The objective of the inventor was to provide a crucible which does not require the preparation of a very thick coating at the end user facilities, which is faster and cheaper to produce and which presents an improved release effect and which allows the production of silicon ingot without cracks. It has now been found that these problems can be solved with a crucible for the crystallization of silicon comprising a) a base body comprising a bottom surface and side walls defining an inner volume; b) a substrate layer compnsing 80 to 100 wt. % of silicon nitride at the surface of the side walls facing the inner volume c) an intermediate layer comprising 50 to 100 wt. % of silica on the top of the substrate layer; and d) a surface layer comprising 50 to 100 wt. % of silicon nitride, up to 50 wt. % of silicon dioxide and up to 20 wt % of silicon on the top of the intermediate layer.

5. 发明专利

ZA200600885B Ultrahard diamonds and method of making thereof 未知
公开(公告)号：ZA200600885B
公开(公告)日：2007-04-25
申请号：ZA200600885
申请日：2006-01-31
申请人： CARNEGIE INST OF WASHINGTON
发明人： HEMLEY RUSSELL J , MAO HO-KWANG , YAN CHIH-SHIUE
IPC分类号： C30B20090101 , C30B7/00 , C30B21/02 , C30B23/00 , C30B25/00 , C30B25/10 , C30B28/06 , C30B28/12 , C30B28/14 , C30B29/04 , C30B33/00 , C30B33/02 , G11B27/034 , G11B27/036 , G11B27/10 , G11B27/11 , G11B27/34 , H04N5/76 , H04N5/765 , H04N5/775 , H04N5/781 , H04N9/804 , H04N9/82
摘要： A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.

6. 发明专利

HK1094484A1 PRODUCTION METHOD OF GAN SINGLE CRYSTAL SUBSTRATE 未知
公开(公告)号：HK1094484A1
公开(公告)日：2007-03-30
申请号：HK07101424
申请日：2007-02-07
申请人： SUMITOMO ELECTRIC INDUSTRIES
IPC分类号： C23C20090101 , C30B20090101 , C30B25/02 , C30B33/00 , H01L21/205 , H01L33/00 , H01L33/16 , H01L33/32
摘要： A gallium nitride single crystal substrate having vertically extending hysteresis of facet-growth which appears in cathode luminescence images of vertical sections of the substrate.

7. 发明专利

ZA200501337B Coloured diamond 未知
公开(公告)号：ZA200501337B
公开(公告)日：2006-12-27
申请号：ZA200501337
申请日：2005-01-01
申请人： ELEMENT SIX LTD
发明人： JAMES TWITCHEN DANIEL , MAURICE MARTINEAU PHILIP , ALAN SCARSBROOK GEOFFREY
IPC分类号： C30B20090101 , C30B33/00

8. 发明专利

FI20070439A 未知
公开(公告)号：FI20070439A
公开(公告)日：2009-01-20
申请号：FI20070439
申请日：2007-06-01
申请人： OPTOGAN OY
发明人： BOUGROV VLADISLAV , ODNOBLYUDOV MAXIM , NIKOLAEV VLADIMIR
IPC分类号： C30B20090101 , C23C20090101

9. 发明专利

HK1102243A1 NITRIDE SEMICONDUCTOR COMPONENTS AND METHOD OF MANUFACTURING THE SAME 未知
公开(公告)号：HK1102243A1
公开(公告)日：2007-11-09
申请号：HK07109694
申请日：2007-09-06
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： NAKAHATA SEIJI , UEMATSU KOJI , NAKAHATA HIDEAKI
IPC分类号： C30B20090101 , H01L33/06 , H01L33/32 , H01L33/40
摘要： Al x In y Ga 1-x-y N (0‰¦x‰¦1; 0‰¦x‰¦1; 0‰¦x+y‰¦1) layered device chips are produced by the steps of preparing a defect position controlled substrate of Al x In y Ga 1-x-y N (0‰¦x‰¦1; 0‰¦y‰¦1; 0‰¦x+y‰¦ 1) having a closed loop network defect accumulating region H of slow speed growth and low defect density regions ZY of high speed growth enclosed by the closed loop network defect accumulating region H, growing epitaxial upper layers B selectively on the low defect density regions ZY, harmonizing outlines and insides of device chips composed of the upper layers B with the defect accumulating region H and the low defect density regions ZY respectively, forming upper electrodes on the upper layers B or not forming the electrodes, dissolving bottom parts of the upper layers B by laser irradiation or mechanical bombardment, and separating the upper layer parts B as device chips C from each other and from the substrate S. Chip-separation is done instantly by the high power laser irradiation or mechanical shock without cutting the substrate S. The defect position controlled substrate S is repeatedly reused.

10. 发明专利

ZA200600883B Annealing single crystal chemical vapor deposition diamonds 未知
公开(公告)号：ZA200600883B
公开(公告)日：2007-04-25
申请号：ZA200600883
申请日：2006-01-31
申请人： CARNEGIE INST OF WASHINGTON
发明人： HEMLEY RUSSELL J , MAO HO-KWANG YAN CHIH-SHIUE
IPC分类号： C30B20090101 , C30B7/00 , C30B21/02 , C30B23/00 , C30B25/00 , C30B25/10 , C30B28/06 , C30B28/12 , C30B28/14 , C30B29/04 , C30B33/00 , C30B33/02 , G11B27/034 , G11B27/036 , G11B27/10 , G11B27/11 , G11B27/34 , H04N5/76 , H04N5/765 , H04N5/775 , H04N5/781 , H04N9/804 , H04N9/82
摘要： A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.

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