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    • 4. 发明授权
    • Creep-resistant, high-strength silicon carbide fibers
    • 耐蠕变,高强度碳化硅纤维
    • US06187705B1
    • 2001-02-13
    • US09447609
    • 1999-11-23
    • Michael D. Sacks
    • Michael D. Sacks
    • C04B35565
    • C04B41/009C04B35/565C04B35/571C04B35/62272C04B41/5346C04B14/4693
    • A high strength, high creep resistant, boron-doped, silicon carbon fiber having no boron nitride coating, originally formed by sintering, is produced by exposing the fiber to a nitrogen atmosphere at a temperature equal to or preferably elevated above the sintering temperature and also exposing the fiber to a carbon monoxide-containing atmosphere at a temperature sufficient to remove boron and boron nitride. The nitrogen atmosphere step may be performed before or after the carbon monoxide-containing atmosphere step. The resulting, uncoated SiC fibers have tensile strengths greater than approximately 2.0 GPa and Morscher-DiCarlo BSR test creep resistance M values greater than approximately 0.75 at 1400 degrees C for one hour in argon. The method is applicable to non-sintered fibers as well, in which case the nitrogen exposure is carried out at between approximately 1750 to 2250 degrees C and the carbon monoxide exposure is carried out at between approximately 1600 to 2200 degrees C.
    • 最初通过烧结形成的不具有氮化硼涂层的高强度,高抗蠕变性,硼掺杂的硅碳纤维是通过在等于或优选高于烧结温度的温度下将该纤维暴露于氮气氛中而产生的,并且还 在足以除去硼和氮化硼的温度下将纤维暴露于含一氧化碳的气氛中。 可以在一氧化碳气氛步骤之前或之后进行氮气氛。 所得到的未涂覆的SiC纤维的拉伸强度大于约2.0GPa,Morscher-DiCarlo BSR试验抗蠕变性M值在氩气中在1400℃下大于约0.75,持续1小时。 该方法也适用于非烧结纤维,在这种情况下,氮暴露在约1750至2250℃之间,一氧化碳暴露在约1600至2200摄氏度之间进行。
    • 7. 发明授权
    • Process for producing fiber-reinforced-silicon carbide composites
    • 生产纤维增强碳化硅复合材料的方法
    • US06773528B2
    • 2004-08-10
    • US10322449
    • 2002-12-19
    • Eiji Tani
    • Eiji Tani
    • C04B35565
    • C04B35/573C04B35/571C04B35/65C04B35/806
    • A process produces a fiber-reinforced silicon carbide composite. The resulting composite has a high toughness where bundles of a reinforcing fiber are densely covered with glassy carbon derived from a resin to avoid deterioration of the strength, and it can easily be produced even in complicated shapes. Specifically, a fiber-reinforced silicon carbide composite is produced by preparing a fiber prepreg containing a powdered silicon and a resin and molding the prepreg to yield a green body having a desired shape, or laminating a fiber prepreg containing a resin and a woven fabric prepreg containing a powdered silicon and a resin in alternate order, and molding the laminate to yield a green body having a desired shape; carbonizing the green body at 900° C. to 1350° C. in an inert atmosphere; impregnating the carbonized body with a resin; firing the impregnated body again at 900° C. to 1350° C. in an inert atmosphere; performing the resin impregnation-carbonization procedure one to five times; subjecting the carbonized composite to reaction sintering at a temperature of 1300° C. or more in vacuo or in an inert atmosphere to form open pores, and finally infiltrating molten silicon into the sintered body having open pores at a temperature of about 1300° C. to 1800° C. in vacuo or in an inert atmosphere.
    • 一种工艺生产纤维增强碳化硅复合材料。 所得复合材料具有高韧性,其中增强纤维束被来自树脂的玻璃碳密实地覆盖,以避免强度的降低,并且即使是复杂的形状也容易制造。 具体地说,通过制备含有硅粉末和树脂的纤维预浸料并制备预浸料以产生具有所需形状的生坯,或层压含有树脂和机织织物预浸料的纤维预浸料,制备纤维增强碳化硅复合材料 以交替的顺序含有粉末状的硅和树脂,并且模压该层压体以产生具有所需形状的生坯; 在惰性气氛中将生坯碳化到900℃至1350℃; 用树脂浸渍碳化体; 在惰性气氛中,在900〜1350℃再次烧制浸渍体; 进行树脂浸渍 - 碳化程序一到五次; 使碳化复合物在1300℃或更高温度下在真空或惰性气氛中进行反应烧结,形成开孔,最后将熔融硅浸入具有约1300℃温度的开孔的烧结体中。 在真空中或在惰性气氛中至1800℃。
    • 9. 发明授权
    • Method of producing a conductive silicon carbide-based sintered compact
    • 制造导电碳化硅类烧结体的方法
    • US06187256B1
    • 2001-02-13
    • US09051375
    • 1998-04-08
    • Mesut AslanRüdiger NassHelmut Schmidt
    • Mesut AslanRüdiger NassHelmut Schmidt
    • C04B35565
    • H05B3/148C04B35/565F01N3/022F01N2330/14
    • A process is described for producing a conductive sintered body based on silicon carbide, in which a) silicon carbide particles, optionally pretreated with a surface modifier, are dispersed in an aqueous and/or organic medium and positive or negative surface charges are generated on the silicon carbide particles by adjustment of the pH of the dispersion obtained; b) carbon black and boron carbide are mixed in as sintering aids, where at least the carbon black particles have a surface charge opposite to the surface charge of the silicon carbide particles and the boron carbide can also be added, completely or in part, at a later point in time (stage c′)); c) the slip thus obtained is shaped directly to form a green body or c′) a sinterable powder is isolated from the slip obtained and is shaped to form a green body, where the above boron carbide can also be added to this sinterable powder; and d) the green body obtained is subjected to pressureless sintering to form a sintered body in essentially three successive steps, namely (i) preheating to 1200-1900° C. in a nitrogen containing atmosphere (ii), sintering at 1900-2200° C. in a noble gas atmospher and (iii) post-heating at 2150-1850° C. and subsequent cooling to ambient temperature in an atomosphere containing nitrogen and/or carbon monoxide.
    • 描述了一种用于制造基于碳化硅的导电烧结体的方法,其中a)任选地用表面改性剂预处理的碳化硅颗粒分散在水性和/或有机介质中,并且在硅上产生正或负表面电荷 碳化物颗粒通过调节获得的分散体的pH调节; b)炭黑和碳化硼作为烧结助剂混合,其中至少炭黑颗粒具有与碳化硅颗粒和硼的表面电荷相反的表面电荷 也可以在稍后的时间点(阶段c')完全或部分地添加碳化物; c)由此获得的滑移物直接成形以形成生坯体,或者从可获​​得的滑动体中分离出可烧结粉末 并且成形为形成生坯体,其中也可以将上述碳化硼添加到该可烧结粉末中; 和)将所得生坯进行无压烧结,以基本上三个连续的步骤形成烧结体,即(i)在含氮气氛(ii)中预热至1200-1900℃,在1900-2200℃烧结 在惰性气体气氛中和(iii)在2150-1850℃下进行后加热,随后在含有氮和/或一氧化碳的大气中冷却至环境温度。
    • 10. 发明授权
    • Silicon carbide ceramic composition and method of making
    • 碳化硅陶瓷组合物及其制造方法
    • US06680267B2
    • 2004-01-20
    • US09933463
    • 2001-08-20
    • Vimal K. PujariWilliam T. Collins
    • Vimal K. PujariWilliam T. Collins
    • C04B35565
    • C04B35/6303C04B35/565C04B2235/3217C04B2235/3224C04B2235/3225C04B2235/3821C04B2235/422
    • The present application is directed to ceramic compositions and, more specifically, to a silicon carbide composition and method of making it through liquid phase sintering. In one embodiment, the present invention is directed to an unsintered ceramic body including a rare earth metal oxide, one of a glass phase metal oxide and a glass phase metal nitride, a boron containing compound, a free carbon containing compound and silicon carbide. In another embodiment, the present invention is directed to a method of making a sintered ceramic body. The method includes combining a rare earth metal oxide, one of a glass phase metal oxide and a glass phase metal nitride, a boron containing compound, a free carbon containing compound, and silicon carbide to form a green ceramic. The method further includes shaping the green ceramic into a ceramic body and sintering the ceramic body.
    • 本申请涉及陶瓷组合物,更具体地涉及碳化硅组合物及其通过液相烧结制备的方法。 在一个实施方案中,本发明涉及包括稀土金属氧化物,玻璃相金属氧化物和玻璃相金​​属氮化物之一的未烧结陶瓷体,含硼化合物,含游离碳的化合物和碳化硅。 在另一个实施方案中,本发明涉及制备烧结陶瓷体的方法。 该方法包括将稀土金属氧化物,玻璃相金属氧化物和玻璃相金​​属氮化物之一,含硼化合物,含游离碳的化合物和碳化硅组合以形成生坯陶瓷。 该方法还包括将生坯陶瓷成型为陶瓷体并烧结陶瓷体。