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1. 发明专利

JPH1091457A INTERRUPTION SYSTEM WITH FLEXIBILITY FOR INTEGRATED CIRCUIT 失效
公开(公告)号：JPH1091457A
公开(公告)日：1998-04-10
申请号：JP21583097
申请日：1997-07-25
申请人： ZILOG INC
发明人： CHAN STEPHEN H
IPC分类号： G06F9/48 , H01L27/02 , H01L27/118 , G06F9/46
摘要： PROBLEM TO BE SOLVED: To provide a microcomputer buried in an integrated circuit with flexible design, in which one interruption input signal is used for servicing to either multiple on-chip or off-chip elements. SOLUTION: A flexible interruption system for supplying interruption signals to the microcontroller 10 provided for the integrated circuit makes a response to either the on-chip or off-chip elements. An interruption circuit is connected to respective bonding pads 30, 32 and 34 and it is also connected to interruption control logic 40 deciding the priority of interruption signals from the elements provided for the chips. All the interruption signals pass common nodes in the interruption circuit. Since a p-channel transistor or an n-channel transistor connected to the common node functions as a pull-up or pull-down transistor, the micro controller 10 senses the rise or fall edge of an interruption request. Since an interruption request signal from either the on-chip element or the off-chip element passes through the common node and the common node is directly connected to a pad, the development and the debugging of a system is simplified.

2. 发明专利

JPH11265591A LOW VOLTAGE CHARGE PUMP CIRCUIT 失效
公开(公告)号：JPH11265591A
公开(公告)日：1999-09-28
申请号：JP35995198
申请日：1998-12-18
申请人： ZILOG INC
发明人： TROUTMAN BRUCE LEE
IPC分类号： G11C16/06 , H02M3/07
摘要： PROBLEM TO BE SOLVED: To make a low voltage charge pump circuit executable to convert a low voltage to a high voltage using an integrated circuit designed for the operation of a low voltage by constituting the charge pump circuit with a first pump circuit to be connected to a pump oscillator, a level shifting circuit to be connected to the first pump circuit in order to generate an intermediate clock and a second pump circuit to be connected to the level shifting circuit in order to generate a high voltage. SOLUTION: Two clocks operating at different frequencies are made to be generated by providing a pump oscillator PMPOSC- 1 230 and the clock of an HIGH FREQ 240 supplies a timing signal to a low voltage pump circuit CPUMP- LV1 210. The clock of LOW- FREQ 250 supplies a timing signal to a high voltage pump circuit CPUMP- HV1 220. The low voltage pump circuit CPUMP- LV1 210 is supplied to a pump circuit having a frequency higher than that of the high voltage pump circuit CPUMP- HV1 220 and the low voltage pump circuit CPUMP- LV1 210 can replenish electric charge lossed in the process of a voltage conversion.

3. 发明专利

JPH10198624A I/O PORT AND TECHNIQUE FOR DESIGNATING ADDRESS OF RAM MEMORY 失效
公开(公告)号：JPH10198624A
公开(公告)日：1998-07-31
申请号：JP23181897
申请日：1997-08-12
申请人： ZILOG INC
发明人： OSCAR EISENBERG
IPC分类号： G06F13/14 , G06F12/06 , G06F13/42
摘要： PROBLEM TO BE SOLVED: To perform access to an I/O port exceeding the I/O address designation ability of microprocessor by writing data in the area of selected I/O port bus when an I/O port access code is detected. SOLUTION: An extension I/O port interface 42 monitors a code in the operating mode area of ROM address bus 22 and detects whether the I/O port access code exists in the area or not. An RDROM control signal 20 is monitored and it is detected whether a signal is in a read ROM state or not. The address of I/O port address area is decoded and any special I/O port is selected out of extension I/O ports 40 to write data. When an RDROM control signal 22 is in the read ROM state and the I/O port access code exists in the operating mode area of ROM address bus 22, the interface 42 writes data through a control line 46 into the selected I/O port.

5. 发明专利

JPS61181150A IMPROVEMENT IN ADHESIVITY OF FILM IN THIN FILM IC CONSTRUCTION 失效
公开(公告)号：JPS61181150A
公开(公告)日：1986-08-13
申请号：JP28911285
申请日：1985-12-21
申请人： ZILOG INC
发明人： JIYUIN KAI TSUANGU
IPC分类号： H01L21/3205 , H01L21/28 , H01L21/3215 , H01L23/52 , H01L29/423 , H01L29/43 , H01L29/49

7. 发明专利

JPH11126901A GATE DIELECTRIC OF FET AND ITS FORMING METHOD 失效
公开(公告)号：JPH11126901A
公开(公告)日：1999-05-11
申请号：JP22705598
申请日：1998-08-11
申请人： ZILOG INC
发明人： BERG JOHN E
IPC分类号： H01L29/78 , H01L21/28 , H01L21/318 , H01L29/51
摘要： PROBLEM TO BE SOLVED: To provide a gate dielectric having good characteristics, such as high dielectric breakdown strength, immunity against hot carrier transfer, and barrier effect with respect to boron diffusion, in which the gate dielectric is operated at an applying-voltage/film-layer ratio between dielectric parts smaller than that of SiO2 . SOLUTION: In an insulating field effect transistor(FET), a thermally grown oxide silicon layer 12 for covering at least part of a transistor channel region 3, and a nitride silicon layer 14 for covering at least part of a first oxide silicon layer are deposited through a low pressure chemical vapor deposition(LPCVD) method. An abrupt heat treatment step is carried out to form a second oxide layer for covering at least part of the nitride silicon layer and change the surface part of the second oxide layer to a dioxide surface layer. In this way, a gate dielectric 10 with an oxide-nitride-oxide structure has a high dielectric breakdown strength and other characteristics mentioned.

9. 发明专利

JPS52109340A DEVICE AND METHOD OF MICROPROCESSING 失效
公开(公告)号：JPS52109340A
公开(公告)日：1977-09-13
申请号：JP2655677
申请日：1977-03-09
申请人： ZILOG INC
发明人： MASATOSHI SHIMA , FUEDERIKO FUAGIN , RARUFU KEI ANGAAMAN
IPC分类号： G06F9/22 , G06F3/00 , G06F13/36 , G06F15/00 , G06F15/16 , G06F15/173 , G06F15/78

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