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    • 5. 发明申请
    • TWISTING BALL DISPLAY
    • WO9750072A2
    • 1997-12-31
    • PCT/US9710124
    • 1997-06-25
    • XEROX CORPCROWLEY JOSEPH M
    • CROWLEY JOSEPH M
    • G02B26/02G09F9/37
    • G02B26/026G09F9/372
    • A gyricon or twisting-particle display based on spheroidal optically anisotropic particles disposed in a substrate. The particles are preferably aligned parallel to one another and packed close together in a monolayer. A rotatable disposition of each particle is achievable while the particle is thus disposed in the substrate; for example, the particles can already be rotatable in the substrate, or can be rendered rotatable in the substrate by a nondestructive operation performed on the substrate. In particular, the substrate can be made up of an elastomer that is expanded by application of a fluid thereto so as to render the particles rotatable therein. A particle, when in its rotatable disposition, is not attached to the substrate. The close-packed monolayer configuration of particles provides excellent brightness characteristics and relative ease of manufacture as compared with certain other high-brightness gyricon displays.
    • 基于设置在基板中的球状光学各向异性粒子的陀螺仪或扭曲粒子显示器。 颗粒优选彼此平行对准并且以单层紧密堆积在一起。 可以实现每个颗粒的可旋转布置,同时将颗粒设置在基板中; 例如,颗粒可以在衬底中可以旋转,或者可以通过在衬底上进行的非破坏性操作而在衬底中转动。 特别地,基材可以由弹性体构成,弹性体通过向其中施加流体而膨胀,以使颗粒在其中可旋转。 当颗粒处于其可旋转的位置时,未附着到基底上。 与某些其他高亮度陀螺显示器相比,颗粒的紧密单层构造提供了优异的亮度特性和相对的制造容易度。
    • 9. 发明公开
    • SEMICONDUCTOR LAYER FOR THIN FILM TRANSISTOR
    • 薄膜晶体管的半导体层
    • KR20080101734A
    • 2008-11-21
    • KR20080045026
    • 2008-05-15
    • XEROX CORP
    • LI YUNINGONG BENG S
    • H01L29/786
    • H01L21/02554H01L21/02628H01L29/7869H01L21/324
    • A semiconductor layer for a thin film transistor is provided to enhance the excellent movement and the on-off ratio using the zinc oxide semiconductor layer. The manufacturing method of the zinc oxide semiconductor layer for the thin film transistor includes the step of providing the solution including the zinc salt and complexion agent; the step of contacting the solution with the substrate; the step of heating the solution; the step of forming the zinc oxide semiconductor layer on the substrate. The zinc salt is selected from the zinc nitrate, zinc chloride, zinc bromide, zinc oxalate, zinc-acetyl acetonate, sulfate zinc, and zinc acetate.
    • 提供用于薄膜晶体管的半导体层,以增强使用氧化锌半导体层的优异的运动和开关比。 用于薄膜晶体管的氧化锌半导体层的制造方法包括提供包含锌盐和肤色剂的溶液的步骤; 将溶液与基材接触的步骤; 加热溶液的步骤; 在基板上形成氧化锌半导体层的步骤。 锌盐选自硝酸锌,氯化锌,溴化锌,草酸锌,乙酰丙酰锌,硫酸锌和乙酸锌。