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1. 发明专利

JP2012178571A Stable and iterable plasma ion implantation method, and device 审中-公开
标题翻译：稳定和等离子体离子植入方法和装置
公开(公告)号：JP2012178571A
公开(公告)日：2012-09-13
申请号：JP2012079462
申请日：2012-03-30
申请人： Varian Semiconductor Equipment Associates Inc , バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
发明人： WALTER STEVEN R , FANG ZIWEI , TOCCO JUSTIN , CARLETON F ELLIS III
IPC分类号： H01L21/265 , C23C14/48 , H01J37/32 , H01L21/223 , H01L21/26 , H01L21/42 , H05H1/46
CPC分类号： H01J37/32412 , C23C14/48 , H01L21/2236
摘要： PROBLEM TO BE SOLVED: To provide a method for at least partially compensating an undesired effect of the interaction between ions to be implanted and a substrate in a plasma ion implanter.SOLUTION: The method for plasma ion implantation on a substrate comprises the steps of: providing a plasma ion implanter which includes a process chamber, a source for generating plasma in the process chamber, a platen for holding the substrate in the process chamber, and a pulse source for generating an implantation pulse for accelerating ions directed to the substrate from plasma; executing plasma ion implantation on the substrate according to an implantation processing; and controlling the energy of the ions during the implantation to at least partially compensate an undesired effect of the interaction between the ions to be implanted and the substrate.
摘要翻译：要解决的问题：提供一种用于至少部分地补偿待注射的离子与等离子体离子注入机中的衬底之间的相互作用的不期望的影响的方法。解决方案：用于在衬底上等离子体离子注入的方法包括以下步骤：提供等离子体离子注入机，其包括处理室，用于在处理室中产生等离子体的源，用于将衬底保持在处理室中的压板以及用于产生用于加速从等离子体引导到所述衬底的离子的注入脉冲的脉冲源; 根据植入处理在衬底上执行等离子体离子注入; 以及在注入期间控制离子的能量至少部分地补偿待植入的离子与衬底之间的相互作用的不期望的影响。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2011091430A Wafer handler method and system 审中-公开
标题翻译： WAFER处理器方法和系统
公开(公告)号：JP2011091430A
公开(公告)日：2011-05-06
申请号：JP2010286014
申请日：2010-12-22
申请人： Varian Semiconductor Equipment Associates Inc , バリアンセミコンダクターイクイップメントアソシエーツ, インク.Varian Semiconductor Equipmentassociates, Inc.
发明人： STONE STANLEY M
IPC分类号： H01L21/677 , B65H1/00 , H01L21/00 , H01L21/68
CPC分类号： H01L21/67745 , H01L21/67184 , H01L21/67201 , Y10S414/139
摘要： PROBLEM TO BE SOLVED: To provide an efficient system and a method for handing wafers.
SOLUTION: The systems and methods for handling wafers include retrieving a first wafer from a cassette 32 by using a first arm 18; transferring the first wafer from the first transfer arm 18 to a second arm 30; delivering the first wafer to a process chamber 16 by using the second arm 30; removing the first wafer from the process chamber 16 by using the first arm 18 after the processing; and returning the first wafer to the cassette 32 by using the first arm 18. These systems and methods can include retrieving the first wafer from the cassette 32 by using the first arm 18; delivering the first wafer to the process chamber 16 using the first arm 18; removing the processed wafer from the process chamber 16 using the second arm 30; and returning the processed wafer to the cassette 32 using the second arm.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供用于处理晶片的有效系统和方法。解决方案：用于处理晶片的系统和方法包括通过使用第一臂18从盒32取回第一晶片; 将第一晶片从第一转移臂18转移到第二臂30; 通过使用第二臂30将第一晶片传送到处理室16; 在处理之后通过使用第一臂18从处理室16移除第一晶片; 并且通过使用第一臂18将第一晶片返回到盒32.这些系统和方法可以包括通过使用第一臂18从盒32取回第一晶片; 使用第一臂18将第一晶片传送到处理室16; 使用第二臂30从处理室16移除处理过的晶片; 并使用第二臂将处理的晶片返回到盒32。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2010192454A Cathode assembly used for indirectly heated cathode ion source 审中-公开
标题翻译：阴极组件用于间接加热阴极离子源
公开(公告)号：JP2010192454A
公开(公告)日：2010-09-02
申请号：JP2010091583
申请日：2010-04-12
申请人： Varian Semiconductor Equipment Associates Inc , バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
发明人： MACIEJOWSKI PETER E , OLSON JOSEPH C , CHANG SHENGWU , PEDERSEN BJORN O , KLOS LEO V JR , DISTASO DANIEL , BERGERON CURT D
IPC分类号： H01J27/14 , H01J27/02 , H01J27/04 , H01J27/08 , H01J37/065 , H01J37/08 , H01J37/317
CPC分类号： H01J27/08 , H01J27/022 , H01J2237/08 , H01J2237/31701
摘要： PROBLEM TO BE SOLVED: To provide a cathode assembly used as a cathode ion source performing a function of shielding a filament from plasma inside an arc chamber.
SOLUTION: The indirectly heated cathode ion source includes an arc chamber housing determining an arc chamber, an indirectly heated cathode, and a filament for heating the cathode. The cathode includes an emitting part having a front face, a rear face and a periphery, a support rod fixed on the rear face of the emitting part, and a skirt extending from the rear face of the emitting part. A cathode assembly includes: the cathode; a filament; and a clamp assembly for mounting the cathode and the filament in a fixed spatial relationship and further for conducting electrical energy to the cathode and the filament. The filament is positioned in a cavity defined by the emitting portion and the skirt of the cathode.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用作阴极离子源的阴极组件，其执行屏蔽电弧室内的等离子体的灯丝的功能。解决方案：间接加热的阴极离子源包括确定电弧室的电弧室外壳，间接加热的阴极和用于加热阴极的灯丝。阴极包括具有前表面，后表面和周边的发射部分，固定在发射部分的后表面上的支撑杆和从发射部分的后表面延伸的裙部。阴极组件包括：阴极; 长丝以及用于将阴极和灯丝固定在固定的空间关系中并进一步用于向阴极和灯丝传导电能的夹具组件。灯丝定位在由发射部分和阴极的裙部限定的空腔中。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2007165655A Direction sensor of wafer 审中-公开
标题翻译：方向传感器
公开(公告)号：JP2007165655A
公开(公告)日：2007-06-28
申请号：JP2005360910
申请日：2005-12-14
申请人： Varian Semiconductor Equipment Associates Inc , バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
发明人： PERKINS JOHN D , MOHR DAVID
IPC分类号： H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a sensing device of the edge of an almost disk-shaped work piece. SOLUTION: A device which determines the edge of an almost disk-shaped work piece such as a semiconductor wafer includes a light source which is arranged so that the optical beam may be turned to the surface of the work piece near the edge of the work piece, in order that a first portion of an optical beam may pass the work piece and a second portion of the optical beam may be intercepted by the work piece. An angle formed by the optical beam and normal line to the surface is equal to the degree of critical angle made by the total inner reflection of the optical beam within the work piece, or larger than the critical angle. Furthermore, the device has a mechanism whereby the work piece is rotated, and is arranged so that the first portion of the optical beam may be detected. The device contains an optical sensor which generates an edge signal showing the edge of the work piece when the work piece is rotated. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供几乎盘形工件的边缘的感测装置。解决方案：确定诸如半导体晶片的几乎盘形工件的边缘的装置包括光源，光源被布置成使得光束可以被转动到靠近工件的边缘的工件的表面工件，以便光束的第一部分可以通过工件，并且光束的第二部分可能被工件截取。由光束和法线到表面形成的角度等于由工件内光束的全内反射产生的临界角度，或大于临界角度。此外，该装置具有使工件旋转的机构，并且被布置成可以检测光束的第一部分。该装置包含一个光学传感器，当工件旋转时，该传感器产生表示工件边缘的边缘信号。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2003031140A Gaseous ion source for oxygen ion injection 审中-公开
标题翻译：用于氧离子注射的气体离子源
公开(公告)号：JP2003031140A
公开(公告)日：2003-01-31
申请号：JP2002135193
申请日：2002-05-10
申请人： Varian Semiconductor Equipment Associates Inc , バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
发明人： REYES JAIME M
IPC分类号： H01J27/02 , H01J27/04 , H01J27/08 , H01J37/08 , H01L21/265
CPC分类号： H01J27/04 , H01J37/08 , H01J2237/31701
摘要： PROBLEM TO BE SOLVED: To provide a method and a device of generating oxygen ion for an ion source using an arc chamber containing at least one oxidizable metal.
SOLUTION: For an ion source using an arc chamber containing at least one oxidizable metal, the method includes a process of supplying gaseous H
2 O to an arc chamber, and a process of making the arc chamber operate within a range of temperature at which, the free energy for formation of gaseous H
2 O is lower than the free energy for formation of oxidizable metal oxide.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种使用含有至少一种可氧化金属的电弧室产生离子源氧离子的方法和装置。解决方案：对于使用含有至少一种可氧化金属的电弧室的离子源，该方法包括将气态H 2 O供应到电弧室的过程，以及使电弧室在温度范围内工作的过程，用于形成气态H 2 O的自由能低于形成可氧化金属氧化物的自由能。

6. 发明专利

JP2013093327A Technique for improving uniformity of ribbon beam 有权
标题翻译：改善RIBBON BEAM的均匀性的技术
公开(公告)号：JP2013093327A
公开(公告)日：2013-05-16
申请号：JP2012265785
申请日：2012-12-04
申请人： Varian Semiconductor Equipment Associates Inc , バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
发明人： PARSER KENNIS H , ATUL GUPTA
IPC分类号： H01J37/317 , H01J37/147 , H01L21/265
CPC分类号： H01J37/147 , H01J37/3007 , H01J2237/1501 , H01J2237/152 , H01J2237/30477 , H01J2237/31701
摘要： PROBLEM TO BE SOLVED: To provide a technique for improving angle uniformity and dose uniformity of a ribbon beam.SOLUTION: An apparatus for improving uniformity of a ribbon beam comprises a first corrector-bar assembly 302 and a second corrector-bar assembly 304 which is located at a downstream side separated just in a distance D from the first corrector-bar assembly 302. Each corrector includes a magnetic core part and a plurality of coils disposed around the magnetic core part, and each coil may be individually excited. Beamlets 31-37 of a ribbon beam 30 are individually deflected by the first corrector. The beamlet 32, for example, is deflected at a small angle θ. The beamlets are rearranged spatially at the position of the second corrector and dose uniformity can be improved. Further, the beamlets are deflected by the second corrector to be parallel. Namely, angle uniformity can be improved.
摘要翻译：要解决的问题：提供一种用于提高带状束的角度均匀性和剂量均匀性的技术。解决方案：一种用于提高带状束的均匀性的装置包括第一校正棒组件302和第二校正棒组件304，第一校正棒组件302和第二校正杆组件304位于仅距离第一校正棒组件每个校正器包括磁芯部分和围绕磁芯部分设置的多个线圈，并且每个线圈可以被单独地激发。带状束30的光束31-37被第一校正器单独偏转。子束32例如以小角度θ偏转。子束在第二校正器的位置处在空间上重新排列，并且可以提高剂量均匀性。此外，子束由第二校正器偏转成平行。即，可以提高角度均匀性。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2009200050A Method and device for implanting ion beam into workpiece inclined at implantation angle 审中-公开
标题翻译：将离子束植入植入角度的工件的方法和装置
公开(公告)号：JP2009200050A
公开(公告)日：2009-09-03
申请号：JP2009109852
申请日：2009-04-28
申请人： Varian Semiconductor Equipment Associates Inc , バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
发明人： OLSON JOSEPH C , RENAU ANTHONY
IPC分类号： H01J37/317 , H01J37/147 , H01L21/265
CPC分类号： H01J37/3171 , H01J37/1471
摘要： PROBLEM TO BE SOLVED: To provide a method and device to adjust parallelism and implantation angles of an ion beam in ion implantation.
SOLUTION: In the ion implantation device parallelizing an ion beam scanned at a scanner 20 by an angle compensator 24, and implanting it in a semiconductor wafer 34, first, beam parallelism is measured by a measurement system 80, and then, the angle compensator 24 is controlled based on the result to adjust the ion beam to have a desired beam parallelism. Next, a beam direction is measured by the measurement system 80, a tilt mechanism 84 is controlled to tilt a platen 36 based on the result to have a desired implantation angle, and then, implantation is performed.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于在离子注入中调节离子束的平行度和注入角度的方法和装置。解决方案：在离子注入装置中，通过角度补偿器24将扫描仪20扫描的离子束并行化，并将其注入半导体晶片34中，首先通过测量系统80测量光束平行度，然后，基于结果控制角度补偿器24，以调整离子束以具有期望的光束平行度。接下来，通过测量系统80测量光束方向，根据结果控制倾斜机构84使压板36倾斜以具有期望的注入角度，然后进行注入。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2006140159A Ion generating device for generating ionized cluster, molecule, and single atom 有权
标题翻译：用于产生离子簇，分子和单原子的离子发生装置
公开(公告)号：JP2006140159A
公开(公告)日：2006-06-01
申请号：JP2005327611
申请日：2005-11-11
申请人： Varian Semiconductor Equipment Associates Inc , ヴァリアンセミコンダクターイクイップメントアソシエイツインコーポレイテッド
发明人： OLSON JOSEPH C , RENAU ANTHONY , SMATLAK DONNA L , CURT DEKKAARUKKE , PAUL MURPHY , ALEXANDER S PEREL , LOW RUSSELL J , PETER CRUNCH
IPC分类号： H01J27/08 , H01J37/08
CPC分类号： H01J37/08 , H01J27/08 , H01J2237/0812 , H01J2237/082 , H01J2237/0825 , H01J2237/0827 , H01J2237/31701
摘要： PROBLEM TO BE SOLVED: To provide an ion source and an ion generating method having a wide operating range.
SOLUTION: An ion source and a method are provided in which molecular ion is generated in a cold operation mode and atomic ion is generated in a hot operating mode. In several implementation cases, a first and a second electron sources are arranged at both ends of an arc chamber. The first electron source is energized energy by a cold operation mode, and the second electron source is energize by a hot operation mode. In another implementation case, electrons are directed to pass through the holes of a cathode in the cold operation mode and are directed to go toward the cathode in the hot operation mode. Further, in the other implementation case, the ion beam generating device comprises a molecular ion source, an atomic ion source, and a switching element for selecting one of the two ion sources.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有宽工作范围的离子源和离子产生方法。解决方案：提供一种离子源和方法，其中在冷操作模式中产生分子离子，并且在热操作模式中产生原子离子。在几个实施情况中，第一和第二电子源被布置在电弧室的两端。第一电子源通过冷操作模式被通电，并且第二电子源通过热操作模式被激励。在另一个实施方案中，电子被引导以在冷操作模式中通过阴极的孔，并且在热操作模式中被引导朝向阴极。此外，在另一实施例中，离子束产生装置包括分子离子源，原子离子源和用于选择两个离子源中的一个的开关元件。版权所有（C）2006，JPO＆NCIPI

9. 发明申请

WO2020018334A1 SILICON CARBIDE SUBSTRATE HEATING 审中-公开
公开(公告)号：WO2020018334A1
公开(公告)日：2020-01-23
申请号：PCT/US2019/041286
申请日：2019-07-11
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： PERGANDE, Paul E.
IPC分类号： H01L21/67 , H01L27/15 , H01L33/00 , H01L21/02
摘要： A system and method for heating silicon carbide substrates is disclosed. The system includes a heating element that utilizes LEDs that emit light at wavelengths between 600 nm and 650 nm. This wavelength is better absorbed by silicon carbide. In certain embodiments, collimating optics are disposed between the LEDs and the silicon carbide substrate. The collimating optics may increase the allowable distance between the LEDs and the substrate. In other embodiments, a diffuser is disposed between the LEDs and the substrate. In addition, a method of heating a substrate is disclosed. The relationship between absorption coefficient and wavelength is determined for the substrate. Based on this relationship, an optimal wavelength or range of wavelengths is selected. The substrate is then heated using an LED emitting light at the optimal wavelengths.

10. 发明申请

WO2020018248A1 DIRECTIONAL DEPOSITION FOR PATTERNING THREE-DIMENSIONAL STRUCTURES 审中-公开
公开(公告)号：WO2020018248A1
公开(公告)日：2020-01-23
申请号：PCT/US2019/039385
申请日：2019-06-27
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： HAUTALA, John
IPC分类号： H01L21/768 , H01L21/311 , H01L21/3065 , H01L21/02 , H01L21/027
摘要： A method for patterning a three-dimensional structure is provided. The method may include providing a substrate, the substrate including the three-dimensional structure, and directing a depositing species from a deposition source to the three-dimensional structure, wherein a layer forms on the three-dimensional structure. The method may further include directing angled ions to the three-dimensional structure from an ion source, wherein the angled ions impinge on a first region of the layer and do not impinge on a second region of the layer. As such, the first region may form a densified layer portion having a first density, and the second region may form an undensified layer portion having a second density, less than the first density.

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