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1. 外观设计

KRDM090147S 有权
公开(公告)号：KRDM090147S
公开(公告)日：2015-10-16
申请号：KRDM090147S
申请日：2015-10-16
申请人： VEECO INSTRUMENTS INC. C871675 , 비코 인스트루먼츠 인코포레이티드

2. 发明专利

JP2014207465A 一様でない熱抵抗を有するウエハキャリア审中-公开
标题翻译：具有不断变化的耐热性能的承载架
公开(公告)号：JP2014207465A
公开(公告)日：2014-10-30
申请号：JP2014116706
申请日：2014-06-05
申请人：ビーコ・インストゥルメンツ・インコーポレイテッド , Veeco Instruments Inc
发明人： BORIS VOLF , BREID SODERMAN , ERIC A ARMOUR
IPC分类号： H01L21/683 , C23C16/458 , H01L21/205 , H01L21/31
CPC分类号： H01L21/68735 , C23C16/4583 , C23C16/4584 , C23C16/46 , H01L21/67103 , H01L21/68764 , H01L21/68771
摘要：【課題】化学蒸着装置において、ウエハの表面を横切る方向における良好な温度均一性およびウエハキャリアの全体を横切る方向における良好な温度均一性が望まれている。【解決手段】ウエハキャリア32は、ウエハを保持する上面34および加熱要素28からの輻射熱伝達によって加熱される底面36を有している。ウエハキャリアの底面36は、ウエハキャリアが互いに異なる箇所において互いに異なる厚みを有するように、凹部54のような特徴部によって非平面になっている。ウエハキャリアのより厚い部分は、より高い熱抵抗を有している。互いに異なる箇所における互いに異なる熱抵抗によって、ウエハへの望ましくない熱伝達の不均一が打ち消されることになる。ウエハキャリアは、ウエハの縁の互いに離間している箇所と係合するための突起を備えるポケットを有していてもよい。【選択図】図3
摘要翻译：要解决的问题：提供一种化学气相沉积装置，其在每个晶片的表面上提供更好的温度均匀性，并且在整个晶片载体上提供更好的温度均匀性。解决方案：水载体32具有保持晶片的顶表面34和通过从加热元件28的辐射热传递而加热的底面36.由于诸如凹陷54的特征，晶片载体的底表面36是非平面的，使得晶片载体在不同位置具有不同的厚度。晶片载体的较厚部分具有较高的热阻。不同位置的热阻差异抵消了对晶片传热的不均匀不均匀性。晶片载体可以具有用于接合晶片边缘上的分离位置的突起的凹穴。

3. 发明专利

JP2010267982A Method and rotary disk type reactor for growing uniform epitaxial layer on the surface of substrate 审中-公开
标题翻译：用于在衬底表面生长均质外延层的方法和旋转盘式反应器
公开(公告)号：JP2010267982A
公开(公告)日：2010-11-25
申请号：JP2010153158
申请日：2010-07-05
申请人： Veeco Instruments Inc , ビーコ・インストゥルメンツ・インコーポレイテッド
发明人： MURPHY MICHAEL , HOFFMAN RICHARD , CRUEL JONATHAN , KADINSKI LEV , RAMER JEFFREY C , ARMOUR ERIC
IPC分类号： H01L21/205 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To provide a reactor and a method that provides a uniform distribution of a reaction gas over the entire processing surface of a substrate carrier and can avoid turbulent flow caused by the speeds of the reaction gas being different.
SOLUTION: A gas flow generator is configured, such that one or a plurality of gas flow include a carrier gas and a reaction gas, and a different part includes the reaction gas having different concentration. The gas flow generator is configured such that, when a substrate carrier is rotatably provided about an axis, the one or a plurality of gas flow containing the reaction gas having different concentration are supplied at a different radial direction distance from the axis. While the gas flowing toward the near part of the axis of the substrate carrier contains a relatively high-concentration carrier gas and a relatively low-concentration reaction gas, the gas flowing toward the distant part from the axis of the substrate carrier contains the relatively high-concentration reaction gas. As a result, the gas flow generator is provided configured so as to deliver a gas having a substantially uniform speed toward the substrate carrier inside the chamber.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种在基板载体的整个处理表面上提供均匀分布的反应气体的反应器和方法，并且可以避免由反应气体的速度引起的湍流不同。解决方案：气流发生器被配置为使得一个或多个气流包括载气和反应气体，并且不同部分包括具有不同浓度的反应气体。气流发生器被构造成使得当基板载体围绕轴线可旋转地设置时，包含具有不同浓度的反应气体的一个或多个气流在与轴线不同的径向方向上被提供。当流到衬底载体的轴的近似部分的气体含有相对高浓度的载气和相对低浓度的反应气体时，从衬底载体的轴线向远侧流动的气体含有较高的 - 浓缩反应气体。结果，气流发生器被配置为将具有基本均匀速度的气体输送到腔室内的衬底载体。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2013123062A Wafer carrier with hub 审中-公开
标题翻译：带框架的拖车
公开(公告)号：JP2013123062A
公开(公告)日：2013-06-20
申请号：JP2013004677
申请日：2013-01-15
申请人： Veeco Instruments Inc , ビーコ・インストゥルメンツ・インコーポレイテッド
发明人： BOGUSLAVSKIY VADIM , ALEXANDER I GURARY , KENG MOY , ERIC A ARMOUR
IPC分类号： H01L21/205 , C23C16/458 , H01L21/673 , H01L21/683
CPC分类号： C23C16/4581 , C23C16/4584 , H01L21/68764 , H01L21/68771 , H01L21/68792
摘要： PROBLEM TO BE SOLVED: To provide a wafer carrier made of materials which have strength and rigidity under elevated temperatures and which do not react with gases employed in a process.SOLUTION: A wafer carrier 30 for a rotating disc CVD reactor includes a unitary plate 32 of a ceramic such as silicon carbide and also includes a hub 40 removably mounted to the plate 32 in a central region of the plate 32. The hub 40 provides a secure connection to a spindle 16 of the reactor without imposing concentrated stresses on the ceramic plate 32. The hub 40 can be removed during cleaning of the plate 32.
摘要翻译：要解决的问题：提供由在高温下具有强度和刚度并且不与过程中使用的气体反应的材料制成的晶片载体。解决方案：用于旋转圆盘CVD反应器的晶片载体30包括诸如碳化硅的陶瓷的整体板32，并且还包括在板32的中心区域中可拆卸地安装到板32的毂40。 40提供与反应器的主轴16的牢固连接，而不会在陶瓷板32上施加集中的应力。在清洁板32期间可以移除毂40。（C）2013，JPO和INPIT

5. 发明专利

JP2008252106A Device and method for growing epitaxial layer on wafer by chemical vapor deposition 有权
标题翻译：通过化学蒸气沉积在水面上生长外延层的装置和方法
公开(公告)号：JP2008252106A
公开(公告)日：2008-10-16
申请号：JP2008119989
申请日：2008-05-01
申请人： Veeco Instruments Inc , ビーコ・インストゥルメンツ・インコーポレイテッド
发明人： BOGUSLAVSKIY VADIM , GURARY ALEXANDER
IPC分类号： C30B15/12 , H01L21/205 , C23C16/44 , C23C16/458 , C23C16/46 , C30B25/10 , C30B25/12 , H01L21/687
CPC分类号： H01L21/68764 , C23C16/4584 , C23C16/46 , C30B25/12 , H01L21/68771 , H01L21/68785 , H01L21/68792 , Y10S117/90 , Y10T117/10
摘要： PROBLEM TO BE SOLVED: To reduce the reactor cycle of a CVD reactor on a solid substrate and a device that evaporatively deposits an epitaxial layer on the CVD reactor on a solid substrate, reduce the cost of component parts, prolong a service life, and attain enhanced accuracy of temperature control. SOLUTION: A wafer carrier 110 is mounted inside the reactor and is moved between a mounting position and an evaporative deposition position D. The wafer carrier is detachably mounted on the upper end of a rotary spindle 120, dispensing with an intermediate susceptor at the evaporative deposition position. The reactor can treat a single wafer or can simultaneously treat a plurality of wafers. As a modification, the system may reduce heat dissipation in a wafer support assembly passing through the spindle and includes a new heating mechanism therefor. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了减少固体基板上的CVD反应器的反应器循环和在固体基板上在CVD反应器上蒸发沉积外延层的装置，降低了组件的成本，延长了使用寿命，达到提高温度控制的精度。解决方案：晶片载体110安装在反应器内部并在安装位置和蒸发沉积位置D之间移动。晶片载体可拆卸地安装在旋转主轴120的上端，分配中间基座蒸发沉积位置。反应器可以处理单个晶片或者可以同时处理多个晶片。作为修改，系统可以减少通过主轴的晶片支撑组件中的散热并且包括用于其的新的加热机构。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2011042028A Assembly of spacer and dicing blade for gang saw erodible by polishing 审中-公开
标题翻译：通过抛光可以防止ANG ANG OF。。。。。。。。。。。。。。。。。
公开(公告)号：JP2011042028A
公开(公告)日：2011-03-03
申请号：JP2010186238
申请日：2010-08-23
申请人： Veeco Instruments Inc , ビーコ・インスツルメンツ・インコーポレーテッド
发明人： SWANSON KENT A , SERAPION DAOF , ABEYTA WILLIAM J
IPC分类号： B24B5/00 , B24B27/06 , B24D5/12 , H01L21/301
CPC分类号： B27B5/34 , B28D5/029 , Y10T29/49826
摘要： PROBLEM TO BE SOLVED: To provide an assembly of a rotary saw blade used in the semiconductor industry. SOLUTION: The saw blade assembly for a gang saw for dicing a wafer includes a plurality of circular saw blades positioned along the common central axis, and a pitch spacer positioned along the common central axis between the adjacent saw blades and being eroded by polishing. The pitch spacer can be eroded to a desired diameter relative to the common central axis, by making the saw blade assembly come into contact with a polishing abrasive. Thus, saw blades of the saw blade assembly can be used for a long period, even if the blades are eroded. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供用于半导体工业中的旋转锯片的组件。解决方案：用于切割晶片的组合锯的锯片组件包括沿着公共中心轴线定位的多个圆锯片，以及沿相邻锯片之间的公共中心轴线定位并且被相邻锯片之间的抛光。通过使锯片组件与抛光研磨剂接触，节距间隔件可以相对于共同的中心轴线被侵蚀到期望的直径。因此，即使刀片被侵蚀，锯片组件的锯片可以长时间使用。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2008102138A Method and device for scanning sample with scanning probe microscope 有权
标题翻译：用扫描探针显微镜扫描样品的方法和装置
公开(公告)号：JP2008102138A
公开(公告)日：2008-05-01
申请号：JP2007268997
申请日：2007-10-16
申请人： Veeco Instruments Inc , ビーコインストルメンツインコーポレイテッド
发明人： MININNI PAUL L
IPC分类号： G01Q10/06 , G01Q30/06 , G01Q60/38
CPC分类号： G01Q30/06 , G01Q10/06 , G01Q60/38
摘要： PROBLEM TO BE SOLVED: To quickly image a transition area such as a side wall of wiring without causing any notching and the like in data. SOLUTION: The method and device for scanning a sample with a scanning probe microscope includes a step for scanning the surface of the sample according to at least one scanning parameter to obtain data corresponding to the surface, and a step for substantially automatically identifying a transition part on the surface. Based on the identified transition part, the sample is rescanned. Preferably, the resultant data are corrected with data obtained by rescanning the transition part. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：快速地对布线侧壁等过渡区域进行图像形成，而不会引起数据中的任何切口等。解决方案：用扫描探针显微镜扫描样品的方法和装置包括根据至少一个扫描参数扫描样品表面以获得对应于表面的数据的步骤，以及用于基本上自动识别的步骤表面上的过渡部分。根据识别的过渡部分，重新扫描样品。优选地，通过重新扫描过渡部分获得的数据校正所得数据。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2007214577A System and method for changing surface temperature of wafer by temperature compensation of wafer carrier 有权
标题翻译：通过温度传感器温度补偿改变波形表面温度的系统和方法
公开(公告)号：JP2007214577A
公开(公告)日：2007-08-23
申请号：JP2007031672
申请日：2007-02-13
申请人： Veeco Instruments Inc , ビーコ・インストゥルメンツ・インコーポレイテッド
发明人： GURARY ALEX , ARMOUR ERIC A , RICHARD HOFFMAN , CRUEL JONATHAN
IPC分类号： H01L21/683 , C23C16/458 , H01L21/205
CPC分类号： C23C16/4586
摘要： PROBLEM TO BE SOLVED: To provide a system and a method for uniformly heating a wafer substrate. SOLUTION: The invention are a system and a method for uniformly heating a wafer substrate arranged on a wafer carrier used for a wafer processing system such as a chemical deposition reaction device. The first pattern of a wafer compartment, for example, one of wafer carriers or a plurality of lings are provided on the surface of the wafer carrier. The second pattern of an insertion material different from the material of the wafer carrier is inserted in the bottom surface of the wafer carrier. The second pattern of the insertion material and the first pattern of the wafer compartment have a substantially complementary relationship. As a result, material contact surfaces more than those in a wafer support region having at least wafer and the wafer compartment exist in an intermediate region where there is no wafer compartment. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于均匀加热晶片衬底的系统和方法。解决方案：本发明是一种用于均匀加热布置在用于诸如化学沉积反应装置的晶片处理系统的晶片载体上的晶片衬底的系统和方法。在晶片载体的表面上设置晶片隔室的第一图案，例如晶片载体或多个引线之一。与晶片载体的材料不同的插入材料的第二图案插入晶片载体的底表面。插入材料的第二图案和晶片隔室的第一图案具有基本互补的关系。结果，材料接触表面比具有至少晶片的晶片支撑区域中的材料接触表面更多，并且晶片隔室存在于不存在晶片隔室的中间区域中。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2004250778A Method and apparatus for smoothing surface on atomic scale 审中-公开
公开(公告)号：JP2004250778A
公开(公告)日：2004-09-09
申请号：JP2003191472
申请日：2003-05-30
申请人： Veeco Instruments Inc , ヴィーコインストゥルメンツインコーポレイテッド
发明人： KOOLS JACQUES C S , DEVASAHAYAM ADRIAN J
IPC分类号： C23C14/02 , C23C14/58 , C23F4/00 , H01F41/30 , H01L21/321 , H01L43/12
CPC分类号： C23C14/5833 , C23C14/022 , C23F4/00 , H01F41/302 , H01J37/32357 , H01L21/32115
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for smoothing surfaces on an atomic scale.
SOLUTION: The invention realizes smoothing of surfaces by use of a low energy ion or neutral noble gas beam, which may be formed in an ion source or a remote plasma source. The smoothing process may comprise a post-deposition atomic smoothing step (e.g., an assist smoothing step) in a multilayer fabrication procedure. The invention utilizes combinations of relatively low particle energy (e.g., below the sputter threshold of the material) and near normal incidence angles, which achieve improved smoothing of a surface on an atomic scale with substantially no etching of the surface.
COPYRIGHT: (C)2004,JPO&NCIPI

10. 发明专利

JP2013138224A Wafer carrier with varying thermal resistance 有权
标题翻译：具有不断变化的耐热性能的承载架
公开(公告)号：JP2013138224A
公开(公告)日：2013-07-11
申请号：JP2013020659
申请日：2013-02-05
申请人： Veeco Instruments Inc , ビーコ・インストゥルメンツ・インコーポレイテッド
发明人： BORIS VOLF , BREID SODERMAN , ERIC A ARMOUR
IPC分类号： H01L21/683 , H01L21/205
CPC分类号： H01L21/68735 , C23C16/4583 , C23C16/4584 , C23C16/46 , H01L21/67103 , H01L21/68764 , H01L21/68771
摘要： PROBLEM TO BE SOLVED: To keep surface temperatures uniform at many wafers held in a wafer carrier in a chemical vapor deposition process.SOLUTION: A wafer carrier 32 has a top surface 34 holding wafers 42 and a bottom surface 36 heated by radiant heat transfer from a heating element 28. The bottom surface 36 of the wafer carrier is non-planar due to features such as depressions 54 so that the wafer carrier has different thickness at different locations. The thicker portions of the wafer carrier have higher thermal resistance. The wafer carrier may have pockets with projections for engaging locations on the edges of the wafer which are separate from each other.
摘要翻译：要解决的问题：为了在化学气相沉积工艺中保持在晶片载体上的许多晶片上保持表面温度均匀。解决方案：晶片载体32具有保持晶片42的顶表面34和通过辐射热传递加热的底表面36 加热元件28.由于诸如凹陷54的特征，晶片载体的底表面36是非平面的，使得晶片载体在不同位置具有不同的厚度。晶片载体的较厚部分具有较高的热阻。晶片载体可以具有用于接合彼此分离的晶片边缘上的位置的突起的凹穴。

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