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1. 发明授权

US5275521A Wafer transfer device 失效
标题翻译：晶圆转移装置
公开(公告)号：US5275521A
公开(公告)日：1994-01-04
申请号：US907545
申请日：1992-07-02
申请人： Athushi Wada
发明人： Athushi Wada
IPC分类号： B65G49/07 , H01L21/673 , H01L21/677 , H01L21/687 , B65G65/00
CPC分类号： H01L21/67309 , H01L21/67778 , H01L21/68707 , Y10S414/137
摘要： A wafer transfer device is intended to transfer wafers between a wafer boat in which a plurality of wafer support plates are vertically arranged at regular intervals and a cassette in which a plurality of wafer-mounted levels are vertically arranged at regular intervals. Each of the wafer support plates is ring-shaped having an opening in the center thereof and a passage is defined by openings of the wafer support plates, extending vertically in the boat. The wafer is horizontally transferred into and out of the wafer boat between the wafer support plates by a fork. The fork can be moved in vertical and horizontal directions and it can also be swung. A wafer push-up disk is arranged movable up and down through the passage in the boat. Three wafer supports are projected from the top of the push-up disk. These projections on the push-up disk are arranged contactable with the underside of the wafer without interfering with the fork. The fork and the push-up disk are associated with each other by a controller to achieve the transferring of wafers.
摘要翻译：晶片传送装置旨在在晶片舟皿之间传输晶片，其中多个晶片支撑板以规则间隔垂直布置，并且其中多个晶片安装级别以规则的间隔垂直布置。每个晶片支撑板是环形的，在其中心具有开口，并且通过在船中垂直延伸的晶片支撑板的开口限定通道。通过叉将晶片水平地转移到晶片舟皿和晶片支撑板之间。叉子可以在垂直和水平方向移动，也可以摆动。晶片上推盘可以通过船中的通道上下移动。从上推盘的顶部投射三个晶片支架。上推盘上的这些凸起可以与晶片的下侧接触，而不会干扰叉。叉和推顶盘通过控制器彼此相关联以实现晶片的转移。

2. 发明授权

US5273424A Vertical heat treatment apparatus 失效
标题翻译：立式热处理设备
公开(公告)号：US5273424A
公开(公告)日：1993-12-28
申请号：US928096
申请日：1992-08-13
申请人： Jun-ichi Kobayashi
发明人： Jun-ichi Kobayashi
IPC分类号： C30B31/16 , C30B33/00 , C30B35/00 , F27D3/12
CPC分类号： C30B33/00 , C30B31/16 , C30B35/00
摘要： A vertical heat treatment apparatus has a reaction furnace, gas-introducing mechanism, a gas-exhausting mechanism, and temperature-sensing means. The reaction furnace is made up of a reaction tube and a heating mechanism. The reaction tube contains a plurality of objects which are to be treated and which are arranged at predetermined intervals. The heating mechanism is arranged outside of the reaction tube. The gas-introducing means introduces a gas into the reaction tube, and the gas-exhausting mechanism exhausts the gas from the reaction tube. The temperature-sensing mechanism includes a guide pipe which passes through the side wall of the reaction tube and which extends along the inner wall of the reaction tube in the longitudinal direction of the reaction tube. One end of the guide pipe is closed and is located inside the reaction tube, while the other end thereof is open and is located outside of the reaction tube. A bendable temperature-measuring device is inserted in the guide pipe. With this structure, the vertical heat treatment apparatus can perform treatment while simultaneously measuring the temperature in the interior of the reaction tube.
摘要翻译：立式热处理装置具有反应炉，气体引入机构，排气机构和温度检测装置。反应炉由反应管和加热机构构成。反应管包含待处理的多个物体，并且以预定间隔布置。加热机构设置在反应管的外部。气体导入装置将气体引入反应管，排气机构从反应管排出气体。温度检测机构包括导管，其穿过反应管的侧壁，并沿反应管的内壁在反应管的纵向延伸。引导管的一端封闭，位于反应管的内侧，另一端开放，位于反应管的外侧。可弯曲的温度测量装置插入导管中。利用这种结构，垂直热处理装置可以同时测量反应管内部的温度进行处理。

3. 发明授权

US5261167A Vertical heat treating apparatus 失效
标题翻译：立式热处理装置
公开(公告)号：US5261167A
公开(公告)日：1993-11-16
申请号：US766205
申请日：1991-09-27
申请人： Kazunari Sakata
发明人： Kazunari Sakata
IPC分类号： F26B21/00 , F26B21/02 , H01L21/00 , H01L21/677 , F26B21/06
CPC分类号： H01L21/67109 , F26B21/003 , F26B21/02 , H01L21/67017
摘要： A vertical heat treating apparatus comprises a casing having an opening through which articles to be processed are loaded and unloaded, a heat treating furnace provided in the casing, a loading and unloading mechanism provided under the heat treating furnace so as to load the articles to be processed in and unload the same from the heat treating furnace, and a clean air flow forming unit provided in a space which is formed in the casing and in which the loading and unloading mechanism is provided so as to form a clean air flow conducted from one side of the casing to the opposite side thereof.
摘要翻译：立式热处理装置包括具有开口的壳体，通过该开口装载和卸载待处理的物品，设置在壳体中的热处理炉，设置在热处理炉下方的加载和卸载机构，以将物品装载为从热处理炉中加工和卸载的清洁空气流形成单元，以及设置在形成在壳体中的空间中的清洁空气流形成单元，其中设置有装载和卸载机构以形成从一个一侧到另一侧。

4. 发明授权

US5221201A Vertical heat treatment apparatus 失效
标题翻译：立式热处理设备
公开(公告)号：US5221201A
公开(公告)日：1993-06-22
申请号：US734784
申请日：1991-07-23
申请人： Kenichi Yamaga , Katsutoshi Ishii , Naotaka Ogino
发明人： Kenichi Yamaga , Katsutoshi Ishii , Naotaka Ogino
IPC分类号： C30B31/10 , F27B17/00
CPC分类号： F27B17/0025 , C30B31/103 , Y10S414/137 , Y10S414/14
摘要： A vertical heat treatment apparatus includes a casing, a vertical heat treatment furnace provided in the casing, a substrate holding unit mounted in the casing for holding substrates to be heat-treated in the vertical heat treatment furnace, a loading/unloading unit having a wafer boat for supporting the substrates, the loading/unloading unit being adapted to put the substrates in and take the same out of the vertical heat treatment furnace, and a transportation robot for moving the substrates between the substrate holding unit and the wafer boat. The vertical heat treatment apparatus further includes a clean air supplying unit for supplying clean air sideways to the wafers supported by the wafer boat when the loading/unloading unit is at an unloading position, a and duct for introducing air from the outside of the apparatus. The clean air supplying unit is provided with an air filter disposed opposed to the wafer boat. Air in a clean room whose pressure is set to be higher than the pressure in the casing is introduced into the clean air supplying unit through the duct.
摘要翻译：立式热处理装置包括壳体，设置在壳体中的立式热处理炉，安装在壳体中用于保持在立式热处理炉中进行热处理的基板的基板保持单元，具有晶片的装载/卸载单元用于支撑基板的装载/卸载单元适于将基板放入立式热处理炉中并将其取出，以及用于在基板保持单元和晶片舟皿之间移动基板的输送机器人。垂直热处理装置还包括清洁空气供给单元，用于当装载/卸载单元处于卸载位置时，向由晶圆舟支撑的晶片横向地供应清洁空气，以及用于从设备的外部引入空气的管道。清洁空气供给单元设置有与晶片舟相对设置的空气过滤器。将其压力设定得高于壳体内的压力的洁净室内的空气通过导管引入清洁空气供给单元。

5. 发明授权

US5206627A Substrate detecting system with edge detection, such as wafer or base material of semiconductor device or LCD 失效
标题翻译：具有边缘检测的衬底检测系统，例如半导体器件或LCD的晶片或基底材料
公开(公告)号：US5206627A
公开(公告)日：1993-04-27
申请号：US794943
申请日：1991-11-20
申请人： Mitsuo Kato
发明人： Mitsuo Kato
IPC分类号： G01V8/12 , G01R31/28 , H01L21/00 , H01L21/67
CPC分类号： H01L21/67265 , Y10S269/903 , Y10S414/136
摘要： A plurality of light-emitting/receiving sections respectively include light-emitting sections arranged to correspond to substrates to be detected and light-receiving sections for receiving beams from the light-emitting sections. The substrates to be detected are a predetermined number of substrates arranged and accommodated at predetermined intervals in a substrate accommodating section. A moving section relatively moves the plurality of light-emitting/receiving sections and the substrates to be detected in directions cross or perpendicular to each other. A plurality of signal processing sections respectively detect changes in received light amounts caused in accordance with an output signal from each of light-receiving sections, when beams from the light-emitting sections are opposite to edge portions of the substrates to be detected while the plurality of light-emitting/receiving sections and the substrates to be detected are moved relative to each other in the directions cross or perpendicular to each other by the moving section. A detecting section detects the presence/absence of the predetermined number of substrates to be detected which are arranged and accommodated in the substrate accommodating section in accordance with output signals from the plurality of signal processing sections.
摘要翻译：多个发光/接收部分别包括被布置为对应于待检测的基板的发光部分和用于接收来自发光部分的光束的光接收部分。要检测的基板是在基板容纳部分中以预定间隔布置和容纳的预定数量的基板。移动部分使得多个发光/接收部分和待检测的基板沿彼此交叉或垂直的方向相对移动。多个信号处理部分分别检测来自每个光接收部分的输出信号引起的接收光量的变化，当来自发光部分的光束与待检测的基板的边缘部分相反时，多个信号处理部分的发光/接收部分和待检测的基板通过移动部分在彼此交叉或垂直的方向上相对于彼此移动。检测部分根据来自多个信号处理部分的输出信号来检测被布置和容纳在基板容纳部分中的预定数量待检测基板的存在/不存在。

6. 发明授权

US5048164A Vertical heat-treatment apparatus having boat transfer mechanism 失效
标题翻译：立式热处理设备具有船舶传送机构
公开(公告)号：US5048164A
公开(公告)日：1991-09-17
申请号：US564318
申请日：1990-08-08
申请人： Yoshiyuki Harima
发明人： Yoshiyuki Harima
IPC分类号： H01L21/00 , H01L21/205 , H01L21/677
CPC分类号： H01L21/67748 , H01L21/67115 , H01L21/67757 , H01L21/67781 , Y10S414/14 , Y10T29/41
摘要： A vertical heat treatment apparatus heat-treats wafers horizontally carried in a boat while keeping the boat vertical in a reaction tube. The apparatus includes a system for transferring the wafers between the boat and wafer carriers, a system for loading and unloading the wafer-carried boat into and out of the reaction tube, and a system for waiting the boat in which not-treated wafers are carried. An arm is provided to move the boat while supporting the boat vertically. The boat is moved by the arm among a first position where the wafer transferring system is located, a second position where the load and unload system is located and a third position where the boat waiting system is located. A system for engaging with the top of the boat is further located at the first position to fix the top of the boat when the wafers are transferred to and out of the boat by the wafer transfer system.
摘要翻译：立式热处理装置对船上水平承载的晶片进行热处理，同时使船垂直于反应管。该装置包括用于在船和晶片载体之间传送晶片的系统，用于将载有晶片的船载入和卸载反应管的系统，以及用于等待未处理的晶片的船的等待系统。提供一个手臂来移动船，同时垂直地支撑船。船在臂之间移动到晶片转移系统所在的第一位置，负载和卸载系统所在的第二位置以及船等待系统所在的第三位置。当晶片通过晶片传送系统传送到和离开船只时，用于与船的顶部接合的系统进一步位于第一位置以固定船的顶部。

7. 发明授权

US5431561A Method and apparatus for heat treating 失效
标题翻译：热处理方法和装置
公开(公告)号：US5431561A
公开(公告)日：1995-07-11
申请号：US166014
申请日：1993-12-14
申请人： Kikuo Yamabe , Keitaro Imai , Katsuya Okumura , Ken Nakao , Seikou Ueno
发明人： Kikuo Yamabe , Keitaro Imai , Katsuya Okumura , Ken Nakao , Seikou Ueno
IPC分类号： H01L21/324 , C30B31/12 , C30B31/14 , H01L21/22 , H01L21/31 , H01L21/673 , H01L21/683 , F27D5/00
CPC分类号： C30B31/12 , C30B31/14
摘要： A method and an apparatus for heat treating in a heat treating apparatus having a heating chamber to be introduced with predetermined gas, a heater disposed around the heating chamber, and jigs disposed in the heating chamber for supporting wafers of a plurality of substrates to be treated in parallel with each other, wherein in order to make the temperature distribution of the wafers of the substrates to be treated in the radial direction uniform in the heat treatment, the jigs are formed to determine the sizes and the shape thereof in predetermined ranges having a gradient according to the heat treating method having a predetermined shape determining procedure so that the jigs are formed in ring-shaped trays (i.e. support-ring) for holding at the peripheries the substrates to be treated and the thickness of the tray is constant or such that the outer peripheral side thereof is thicker than the inner peripheral side thereof.
摘要翻译：一种热处理装置中的热处理方法和装置，其特征在于，具有要加入预定气体的加热室，设置在所述加热室周围的加热器和设置在所述加热室中的夹具，用于支撑待处理的多个基板的晶片彼此并联，其中为了使热处理中要处理的基板的晶片的温度分布均匀，形成夹具以确定其尺寸和形状，其具有在根据具有预定形状确定步骤的热处理方法的梯度，使得夹具形成为环状托盘（即，支撑环），用于在周边保持要处理的基板，并且托盘的厚度等于或等于其外周侧比其内周侧厚。

8. 发明授权

US5261935A Clean air apparatus 失效
标题翻译：清洁空气装置
公开(公告)号：US5261935A
公开(公告)日：1993-11-16
申请号：US23394
申请日：1993-02-26
申请人： Katsumi Ishii , Takanobu Asano , Masaharu Abe , Kenichi Yamaga , Kazunari Sakata , Takashi Tanahashi , Syuji Moriya
发明人： Katsumi Ishii , Takanobu Asano , Masaharu Abe , Kenichi Yamaga , Kazunari Sakata , Takashi Tanahashi , Syuji Moriya
IPC分类号： C30B33/00 , H01L21/00 , H01L21/677 , B01D46/04
CPC分类号： H01L21/67757 , C30B33/00 , H01L21/67017 , H01L21/67769 , H01L21/67772 , Y10S414/137 , Y10S414/139 , Y10S414/14
摘要： A clean air apparatus includes a housing having an opening through which a carrier housing semiconductor wafers is supplied into the housing and an I/O port for supporting the carrier and a furnace for treating the wafer, provided in the upper portion of the housing. The carriers are at the same time supported by a first carrier stage provided in the upper portion of the housing and supported by a second carrier stage provided in the lower portion of the housing. The carrier or carriers are selectively moved between the I/O port and the first stage, between the I/O port and the second stage, and between the first stage and the second stage. A clean air is applied to the wafers in the carriers supported by the I/O port, the first stage and the second stage.
摘要翻译：清洁空气装置包括壳体，壳体具有开口，载体壳体半导体晶片被供给到壳体中，以及用于支撑载体的I / O端口和设置在壳体的上部中的晶片处理炉。载体同时由设置在壳体的上部中的第一载体台支撑并由设置在壳体的下部中的第二载体台支撑。载体或载体选择性地在I / O端口和第一级之间，I / O端口和第二级之间以及在第一级和第二级之间移动。将清洁空气施加到由I / O端口，第一级和第二级支撑的载体中的晶片。

9. 发明授权

US5239614A Substrate heating method utilizing heating element control to achieve horizontal temperature gradient 失效
标题翻译：基板加热方式利用加热元件控制实现水平温度梯度
公开(公告)号：US5239614A
公开(公告)日：1993-08-24
申请号：US791545
申请日：1991-11-14
申请人： Seiko Ueno , Ken Nakao , Kikuo Yamabe , Keitaro Imai
发明人： Seiko Ueno , Ken Nakao , Kikuo Yamabe , Keitaro Imai
IPC分类号： H01L21/22 , H01L21/00 , H01L21/205 , H01L21/31
CPC分类号： H01L21/67115
摘要： A heat-treating method comprising preparing a plurality of wafers parallel to one another in a process tube while keeping their surfaces to be treated substantially horizontal, arranging plural MoSi.sub.2 wire heaters along the longitudinal axis of the process tube so as to be placed around the process tube, adjusting the amount of current supplied to the heaters to form on the treated surface of each of the wafers temperature gradient extending from one side of the outer circumferential rim of each of the wafers to the other side thereof, and rotating the wafers in their surfaces.
摘要翻译：一种热处理方法，包括在处理管中彼此平行地制备多个晶片，同时保持其待处理的表面基本上水平，沿着处理管的纵向轴线布置多个MoSi2线加热器，以便围绕该工艺调节供应到加热器的电流量，以在每个晶片的每个晶片的处理表面上形成从每个晶片的外周边缘的一侧延伸到另一侧的温度梯度，并且将晶片在它们的表面。

10. 发明授权

US5229576A Heating apparatus 失效
标题翻译：加热装置
公开(公告)号：US5229576A
公开(公告)日：1993-07-20
申请号：US842984
申请日：1992-02-28
申请人： Ken Nakao , Seiji Sakurai , Yoshihisa Miyahara , Yoshiyuki Motoyoshi
发明人： Ken Nakao , Seiji Sakurai , Yoshihisa Miyahara , Yoshiyuki Motoyoshi
IPC分类号： F27D11/02 , C23C16/46 , H01L21/205 , H01L21/22 , H05B3/64 , H05B3/66
CPC分类号： C23C16/46 , H05B3/64
摘要： A heating apparatus provided with a double layered heat-insulating material. This heat-insulating material includes an inner layer portion constituted by an alumina fiber/inorganic filler/inorganic binder and having a bulk density of 0.3 to 0.8 g/cm.sup.3, and an outer layer portion integrally laminated on the inner layer portion, and constituted by an alumina silica fiber/ inorganic binder and having a bulk density of 0.2 to 0.4 g/cm.sup.3 which is smaller than that of the inner layer portion.
摘要翻译：一种具有双层隔热材料的加热装置。该绝热材料包括由氧化铝纤维/无机填料/无机粘合剂构成的体积密度为0.3〜0.8g / cm 3的内层部分和整体层叠在内层部上的外层部，由氧化铝二氧化硅纤维/无机粘合剂，并且其体积密度小于内层部分的体积密度为0.2至0.4g / cm 3。

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