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3. 发明专利

JPS5251728A METHOD AND DEVICE FOR MAKING FILM IN GROUND 失效
公开(公告)号：JPS5251728A
公开(公告)日：1977-04-25
申请号：JP12674276
申请日：1976-10-20
申请人： TECHNION RES & DEV FOUNDATION
发明人： DAN ZASURAFUSUKII , JIORA BIRAN , GIDEON SAINAI
IPC分类号： A01G15/00 , A01G25/00 , A01G25/06 , E02B11/02 , E02B13/00 , E02D19/18 , E02F5/10

4. 发明专利

JPH06205926A IMPROVED DEVICE FOR RAPID DRYING OF COMPRESSED AIR 失效
公开(公告)号：JPH06205926A
公开(公告)日：1994-07-26
申请号：JP23235093
申请日：1993-08-25
申请人： TECHNION RES & DEV FOUNDATION , RAMU RABIE
发明人： RAMU RABIE
IPC分类号： B01D53/04 , B01D53/26
摘要： PURPOSE: To provide an improved rapid drying apparatus for compressed air using a heating value exchange (HME) system. CONSTITUTION: An oil captured by the flow of compressed air is removed by making it adsorbed onto a catalyst and then passing through an HME system containing no oil. The HME system is composed of a pair of adsorbing/ desorbing bed containing a drying agent. In the system, moisture is cooled and liquefied. The drying agent is selected from various mixtures such as active carbon, silica gel, alumina, molecular sieve or their mixtures. Preferably a gas containing no oil is pre-heated before entering into the HME system. An alternative oil removing method is a contact type combustion system. In that case combustion temperature is in the range of 120-200 deg.C and a heat of combustion is utilized for pre-heating of the air before its entering to the contact type combustion system.

5. 发明专利

JPH02222521A MANUFACTURE OF X-RAY LITHOGRAPHY MASK 失效
公开(公告)号：JPH02222521A
公开(公告)日：1990-09-05
申请号：JP33298289
申请日：1989-12-25
申请人： TECHNION RES & DEV FOUNDATION
发明人： YOOZEFU YAHAROMU
IPC分类号： G03F1/22 , H01L21/027
摘要： PURPOSE: To provide a method of manufacturing X-ray lithographic mask capable of easily manufacturing and sustaining the shape accuracy causing no distortion at all by a method wherein an oxide metallic layer is deposited on a part of a substrate surface while the hack of the substrate is etched away so as to form a metallic oxide membrane supported by the substrate. CONSTITUTION: A part of the surface of a substrate 1 is protected to deposit an oxide metallic layer on one part of the not yet protected part of the surface and then the back of the substrate 1 is etched away to produce an oxide metallic membrane 2 supported by another substrate 3 for the formation of a pattern on the membrane 2. For example, a silicon wafer is coated with chrome 50Å thick, Au 50Å thick and aluminum 3000Å thick and after coating the back of the wafer with photoresist, the aluminum on the upper surface is anodized. Next, after making a window by exposing through a mask having a round window therein, the wafer is etched away in a solution of HF-H2 O2 -nitric acid to be cleaned up in deionized water for producing the aluminum oxide membrane 2 to form an Au pattern on the membrane 2.

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