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    • 4. 发明专利
    • Method for producing single crystal silicon
    • 生产单晶硅的方法
    • JP2013256445A
    • 2013-12-26
    • JP2013170876
    • 2013-08-21
    • Shin-Etsu Chemical Co Ltd信越化学工業株式会社
    • NEZU SHIGEYOSHIOKADA JUNICHIKUME FUMITAKA
    • C30B29/06C01B33/035C30B15/02
    • PROBLEM TO BE SOLVED: To provide a technique where high purity single crystal silicon can be obtained by a multi-pulling method.SOLUTION: An allowable total amount of heavy metal impurity concentration in a bulk of a polycrystalline silicon lump to keep each concentration of chromium, iron, nickel, copper and cobalt in CZ single crystal silicon 0.05 ppta or less is 759 ppta when the number n of multi-pulling is one. The allowable total amount of the heavy metal impurity concentration decreases according to the increasing of the number of the multi-pulling and becomes roughly 150 ppta (152 ppta) in the case of n=5 and roughly 75 ppta (76 ppta) in the case of n=10. Therefore, high purity single crystal silicon can be obtained by a multi-pulling method if a polycrystalline silicon lump group consisting of only the polycrystalline silicon lump where the total amount of the heavy metal impurity concentration of chromium, iron, nickel, copper and cobalt detected from the bulk is 150 ppta or less is used as a raw material.
    • 要解决的问题:提供通过多牵引方法可以获得高纯度单晶硅的技术。解决方案:在多晶硅块体中允许的重金属杂质浓度的允许总量,以保持每种浓度的铬 ,CZ单晶硅中的铁,镍,铜和钴0.05ppta以下,多拉为n时为759ppta。 重金属杂质浓度的允许总量根据多拉的数量的增加而减少,在n = 5的情况下变为大约150ppta(152ppta),在这种情况下大约为75ppta(76ppta) 的n = 10。 因此,如果由只有多晶硅团组成的多晶硅团块,其中检测到铬,铁,镍,铜和钴的重金属杂质浓度的总量,则可以通过多牵引方法获得高纯度单晶硅 从大量的150 ppta或更少作为原料。
    • 6. 发明专利
    • Photocurable and thermosetting resin composition, molded product and article
    • 可光热固化树脂组合物,模制产品和文章
    • JP2013234301A
    • 2013-11-21
    • JP2012109111
    • 2012-05-11
    • Shin-Etsu Chemical Co Ltd信越化学工業株式会社
    • TSUCHIDA KAZUHIROHIROKAMI MUNENAOMIZUNASHI TOMOYUKI
    • C08F290/06C08F290/14C08G77/26C08J7/04
    • PROBLEM TO BE SOLVED: To provide a photocurable and thermosetting resin composition suitable for a functional film material and an antifouling scratch-resistant coating material.SOLUTION: As a resin composition, a silicon compound having the following structure is used as a main component of a siloxane unit. In the structure, a linking group between a (meth)acryloxy group as a photo-polymerizable group and silicon includes a urethane bond, and 1 to 5 (meth)acryloxy groups are linked to the same silicon atom by chemical bonds excluding a siloxane bond. In this way, by using the silicon compound, a distance between crosslinking points in a cured resin is increased compared to conventional compositions to alleviate curing shrinkage while keeping sufficient hardness. The hardness and toughness of a cured product are both achieved in a high level by a secondary interaction by a hydrogen bond between structural groups in the urethane bond moiety.
    • 要解决的问题:提供适用于功能膜材料和防污擦伤涂层材料的光固化性和热固性树脂组合物。解决方案:作为树脂组合物,使用具有以下结构的硅化合物作为 硅氧烷单元。 在该结构中,作为光聚合性基团的(甲基)丙烯酰氧基与硅的连接基团包含氨基甲酸酯键,并且通过除硅氧烷键之外的化学键将1〜5个(甲基)丙烯酰氧基连接到相同的硅原子 。 以这种方式,通过使用硅化合物,与常规组合物相比,固化树脂中的交联点之间的距离增加,以减轻固化收缩同时保持足够的硬度。 固化产物的硬度和韧性都通过氨基甲酸酯键部分中的结构基团之间的氢键的二次相互作用在高水平上实现。
    • 7. 发明专利
    • Silicone-modified zwitterionic compound and method for producing the same
    • 硅氧烷改性的ZWITTERIONIC化合物及其生产方法
    • JP2013234157A
    • 2013-11-21
    • JP2012108236
    • 2012-05-10
    • Shin-Etsu Chemical Co Ltd信越化学工業株式会社
    • INO HIROOMI
    • C07F7/10
    • PROBLEM TO BE SOLVED: To provide a new silicone-modified zwitterionic compound with high solubility and a low melting point, and to provide a method for producing the same.SOLUTION: A silicone-modified zwitterionic compound is provided, being represented by formula (1) [wherein, at least one of R, Rand Rhas a structure of formula (2), others are any of 1-6C alkyl, aryl, fluorine-substituted alkyl and hydroxyl-containing alkyl, and two of R, Rand Rmay form a ring; l is an integer of 3-6 (in formula (2), Ris 1-8C organic group or siloxane linkage-bearing group; R, Rand Rare any of 1-8C monovalent organic group, siloxane-linkage-bearing group and a siloxy group represented by -OSiRRR; m is 1-4; n is 1-10; and (a) is an integer of 0-2)].
    • 要解决的问题:提供具有高溶解度和低熔点的新的硅氧烷改性的两性离子化合物,并提供其制备方法。溶液:提供了由式(1)表示的硅氧烷改性的两性离子化合物 )[其中,R,Rand Rhas中的至少一个是式(2)的结构,其它是1-6C烷基,芳基,氟取代的烷基和含羟基的烷基中的任何一个,R,Rand R may中的两个形成 环; l为3-6的整数(式(2)中,R 1为1-8C有机基团或与硅氧烷键合的基团; R, 由-OSiRRR表示的基团; m为1-4; n为1-10;和(a)为0-2的整数]]。
    • 8. 发明专利
    • Method of manufacturing porous glass deposit for optical fiber
    • 制造光纤多孔玻璃沉积的方法
    • JP2013234078A
    • 2013-11-21
    • JP2012105373
    • 2012-05-02
    • Shin-Etsu Chemical Co Ltd信越化学工業株式会社
    • URATA YUHEI
    • C03B37/018
    • C03B37/0142C03B2207/50C03B2207/60
    • PROBLEM TO BE SOLVED: To provide a method of manufacturing a porous glass deposit for optical fiber capable of reducing process cost by glass lathe while preventing large fluctuation in optical characteristics by restraining periodical variation of the outer diameter in the long direction while not changing the manufacturing unit to a large degree in a vapor phase axial deposition method.SOLUTION: In a method of manufacturing a porous glass deposit for optical fiber in which a combustion gas and an auxiliary combustion gas are supplied to a plurality of burners with a feed and soot is deposited on the starting material while it is drawn up in the axial direction, the apical part of the soot deposition layer is photographed during deposition and slope value (mm/mm) of the profile line of the vertical cross section of the apical part is calculated. In this method, gas condition of the gas supplied to a deposition burner for a first clad part deposition and a deposition burner for a second clad part deposition and the location of burners are adjusted so that the maximum value of the slope value formed in the vicinity of a first clad deposition layer formed by a deposition burner for the first clad deposition and a second clad deposition layer formed by a deposition burner for the second clad deposition is not higher than 6.6.
    • 要解决的问题:提供一种制造能够通过玻璃车床降低加工成本的光纤的多孔玻璃沉积物的制造方法,同时通过抑制长径方向的外径的周期性变化而防止光学特性的大的波动,同时不改变制造 在气相轴向沉积方法中的大部分单元。解决方案:在制造用于光纤的多孔玻璃沉积物的方法中,其中燃烧气体和辅助燃烧气体被供给到具有进料和烟灰的多个燃烧器 沉积在起始材料上,同时沿轴向拉伸,在沉积期间拍摄烟灰沉积层的顶部,并计算顶部垂直截面的轮廓线的斜率(mm / mm) 。 在该方法中,调节供给到用于第一包层部分沉积的沉积燃烧器的气体和用于第二包层部分沉积的沉积燃烧器和燃烧器的位置的气体条件,使得在附近形成的斜率值的最大值 由用于第一包层沉积的沉积燃烧器形成的第一包覆淀积层和由用于第二包层沉积的沉积燃烧器形成的第二包层沉积层不高于6.6。
    • 9. 发明专利
    • Polymerizable monomer, polymeric compound, positive resist material and pattern forming method using the same
    • 可聚合单体,聚合物,正极材料和图案形成方法
    • JP2013227433A
    • 2013-11-07
    • JP2012100568
    • 2012-04-26
    • Shin-Etsu Chemical Co Ltd信越化学工業株式会社
    • HATAKEYAMA JUNHASEGAWA KOJI
    • C08F12/22C07C43/243C08F212/00C08F212/14C08F220/38C08F232/00G03F7/039H01L21/027
    • G03F7/0397C08F12/22C08F212/00C08F212/14C08F220/10C08F220/38G03F7/0045G03F7/0046G03F7/039G03F7/2041G03F7/30
    • PROBLEM TO BE SOLVED: To provide a polymeric compound suitable as a positive resist material giving a resist film that has higher resolution than a conventional positive resist material, has small line edge roughness and a good pattern profile after exposure, and has excellent etching durability and a little amount of outgassing during exposure, and in particular, suitable for a base resin of a chemically amplified positive resist material, and to provide a positive resist material and a pattern forming method using the polymeric compound, and a polymerizable monomer for obtaining the polymeric compound.SOLUTION: A polymerizable monomer is represented by general formula (1) (wherein Rrepresents a methyl group, ethyl group, propyl group, vinyl group or ethynyl group; the circle represents a cyclic bridged cyclic cycloalkyl group having 3 to 12 carbon atoms, which may include a double bond, however, it is not allowed that the circle is a cyclohexyl group and Ris an ethyl group; Rrepresents a hydrogen atom, a 1-4C straight-chain, branched or cyclic alkyl group; and m represents an integer of 1 to 4). The positive resist material shows a high contrast of an alkaline dissolution rate before and after exposure, suppresses swelling in an alkali developing solution, thereby preventing pattern collapse and achieving high resolution, has a good pattern profile and a good condition of edge roughness after exposure, and in particular, suppresses an acid diffusion rate and shows excellent etching durability.
    • 要解决的问题:为了提供适合作为正性抗蚀剂材料的高分子化合物,其赋予比常规正性抗蚀剂材料更高分辨率的抗蚀剂膜,具有小的线边缘粗糙度和曝光后的良好图案轮廓,并且具有优异的蚀刻耐久性和 并且特别适用于化学放大的正性抗蚀剂材料的基础树脂,并且提供使用该聚合物的正性抗蚀剂材料和图案形成方法,以及用于获得聚合物的聚合性单体 化合物。溶液:可聚合单体由通式(1)表示(其中R表示甲基,乙基,丙基,乙烯基或乙炔基;该环表示具有3至12个碳原子的环状桥连环烷基, 其可以包括双键,然而,不允许该环为环己基并且Ris为乙基; Rrepresen 一个氢原子,一个1-4C的直链,支链或环状的烷基; m表示1〜4的整数)。 正性抗蚀剂材料在曝光前后显示碱性溶解速度的高对比度,抑制碱性显影液中的溶胀,从而防止图案塌陷并实现高分辨率,具有良好的图案轮廓和曝光后的良好的边缘粗糙度条件, 特别是抑制酸扩散速度,显示优异的蚀刻耐久性。