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1. 发明申请

US20100066877A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20100066877A1
公开(公告)日：2010-03-18
申请号：US12595229
申请日：2008-04-16
申请人： Takumi Yamaguchi , Sougo Ohta
发明人： Takumi Yamaguchi , Sougo Ohta
IPC分类号： H04N5/335
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14641 , H04N5/37457 , H04N9/045
摘要： A solid state imaging device includes shared amplification transistors and reset transistors arranged, for example, in a checkered pattern so that centroid of photo diodes 2 of the same colors are arranged substantially at an identical pitch. As a result, the resolution of the solid state imaging device can be maintained without considering irregularities of the incident light for each unit pixel.
摘要翻译：固态成像装置包括共享放大晶体管和复位晶体管，其布置为例如以方格图案，使得相同颜色的光电二极管2的质心基本上以相同的间距排列。结果，可以保持固态成像装置的分辨率，而不考虑每个单位像素的入射光的不规则性。

2. 发明申请

US20120018787A1 SOLID-STATE IMAGE PICKUP DEVICE 失效
标题翻译：固态图像拾取器件
公开(公告)号：US20120018787A1
公开(公告)日：2012-01-26
申请号：US13146293
申请日：2010-02-02
申请人： Takahiro Iwasawa
发明人： Takahiro Iwasawa
IPC分类号： H01L31/14
CPC分类号： H01L27/14603 , H01L27/14641 , H01L27/14643 , H04N5/37457 , H04N5/376
摘要： A solid-state image pickup device includes a pixel array having a plurality of photodiodes that are disposed in a matrix, electric charge transfer gates, and a floating diffusion (FD), and further includes a reset transistor and an amplifier transistor each shared by the four adjacent photodiodes. In the solid-state image pickup device, the photodiodes include first to fourth photodiodes. In a state where the amplifier transistor is activated, electric charge transfer gates connected respectively to the first to fourth photodiodes are sequentially turned ON and electric charges accumulated in the photodiodes are sequentially read out through the FD. Accordingly, a readout blanking period can be minimized to and signal charges can be read out at high speed. Moreover, readout signal lines need only to be provided for every two columns of the photodiodes, so that openings of the photodiodes can be increased in size.
摘要翻译：固体摄像装置包括：具有配置在矩阵中的多个光电二极管的像素阵列，电荷传输门和浮动扩散（FD），还包括复位晶体管和放大晶体管，四个相邻的光电二极管。在固态图像拾取装置中，光电二极管包括第一至第四光电二极管。在放大晶体管被激活的状态下，分别连接到第一至第四光电二极管的电荷传输门依次导通，并且通过FD顺序地读出累积在光电二极管中的电荷。因此，读出消隐期可以最小化并且可以高速读出信号电荷。此外，仅需要为光电二极管的每两列提供读出信号线，使得光电二极管的开口尺寸可以增加。

3. 发明专利

TW200903790A 固體攝像裝置审中-公开
简体标题：固体摄像设备
公开(公告)号：TW200903790A
公开(公告)日：2009-01-16
申请号：TW097113629
申请日：2008-04-15
申请人：樂思尼股份有限公司 ROSNES CORPORATION
发明人：寺川澄雄 TERAKAWA, SUMIO
IPC分类号： H01L , H04N
CPC分类号： H01L27/14609 , H01L27/14603
摘要：本發明的1個固體攝像裝置為,係在半導體基板上將具有對射入光進行光電變換的光電二極體、和由前述光電二極體讀出信號電荷的讀出電晶體、及將讀出信號電荷變換成電壓的浮動擴散區域之畫素配置成矩陣狀而成的固體攝像裝置,其中,位在前述光電二極體的n型形成層之下的p型井,係設置在離開前述光電二極體側之基板表面的位置上,位在讀出電晶體之下的p型井係形成至半導體基板之表面為止。
简体摘要：本发明的1个固体摄像设备为,系在半导体基板上将具有对射入光进行光电变换的光电二极管、和由前述光电二极管读出信号电荷的读出晶体管、及将读出信号电荷变换成电压的浮动扩散区域之像素配置成矩阵状而成的固体摄像设备,其中,位在前述光电二极管的n型形成层之下的p型井,系设置在离开前述光电二极管侧之基板表面的位置上,位在读出晶体管之下的p型井系形成至半导体基板之表面为止。

4. 发明公开

US20230308780A1 IMAGING DEVICE, AND ELECTRONIC INSTRUMENT COMPRISING IMAGING DEVICE 审中-公开
公开(公告)号：US20230308780A1
公开(公告)日：2023-09-28
申请号：US18041518
申请日：2021-08-19
申请人： Rosnes Corporation
发明人： Takumi YAMAGUCHI
IPC分类号： H04N25/702 , H04N25/77 , H04N25/703 , H01L27/146
CPC分类号： H04N25/702 , H04N25/77 , H04N25/703 , H01L27/14636
摘要： Provided is an imaging device and an electronic apparatus including the imaging device capable of realizing high-speed driving of a drive wiring and a signal line of a pixel and realizing miniaturization, high resolution, and high sensitivity. An imaging device having a pixel arrangement in which rectangular pixels whose horizontal pixel dimension is longer than a vertical pixel dimension are arranged by being moved in a horizontal direction every other row by a shift dimension of ½ of a horizontal pixel dimension.

5. 发明授权

US08576312B2 Solid-state image pickup device with particular pixel arrangement 失效
标题翻译：具有特定像素布置的固态图像拾取装置
公开(公告)号：US08576312B2
公开(公告)日：2013-11-05
申请号：US13146136
申请日：2010-02-02
申请人： Sougo Ohta
发明人： Sougo Ohta
IPC分类号： H04N3/14 , H04N5/335 , H04N9/04 , H01L21/00
CPC分类号： H01L27/14603 , H01L27/14612 , H01L27/14621 , H01L27/14641 , H01L27/14643
摘要： In a solid-state image pickup device according to this invention, because a photodiode 2 has a side close to a transfer transistor 3 is longer than an opposite side of the photodiode 2, the transfer transistor 3 can be increased in width. Therefore, it is possible to miniaturize the size of a pixel without causing deterioration in reading property. As a result, this invention can provide the solid-state image pickup device that achieves further miniaturization of pixels by applying an efficient layout of the pixels.
摘要翻译：在根据本发明的固态图像拾取装置中，由于光电二极管2具有靠近传输晶体管3的一侧比光电二极管2的相反侧更长，所以传输晶体管3的宽度可以增加。因此，可以使像素的尺寸小型化，而不会导致读取特性的劣化。结果，本发明可以提供通过应用像素的有效布局来实现像素进一步小型化的固态图像拾取装置。

6. 发明申请

US20110278653A1 SOLID-STATE IMAGE PICKUP DEVICE 失效
标题翻译：固态图像拾取器件
公开(公告)号：US20110278653A1
公开(公告)日：2011-11-17
申请号：US13146136
申请日：2010-02-02
申请人： Sougo Ohta
发明人： Sougo Ohta
IPC分类号： H01L31/14
CPC分类号： H01L27/14603 , H01L27/14612 , H01L27/14621 , H01L27/14641 , H01L27/14643
摘要： In a solid-state image pickup device according to this invention, because a photodiode 2 has a side close to a transfer transistor 3 is longer than an opposite side of the photodiode 2, the transfer transistor 3 can be increased in width. Therefore, it is possible to miniaturize the size of a pixel without causing deterioration in reading property. As a result, this invention can provide the solid-state image pickup device that achieves further miniaturization of pixels by applying an efficient layout of the pixels.
摘要翻译：在根据本发明的固态图像拾取装置中，由于光电二极管2具有靠近传输晶体管3的一侧比光电二极管2的相反侧更长，所以传输晶体管3的宽度可以增加。因此，可以使像素的尺寸小型化，而不会导致读取特性的劣化。结果，本发明可以提供通过应用像素的有效布局来实现像素进一步小型化的固态图像拾取装置。

7. 发明公开

US20230290791A1 IMAGING DEVICE 审中-公开
公开(公告)号：US20230290791A1
公开(公告)日：2023-09-14
申请号：US18040757
申请日：2021-08-05
申请人： Rosnes Corporation
发明人： Takumi YAMAGUCHI , Kenichi SHIMOMURA , Shiro DEGUCHI
IPC分类号： H01L27/146
CPC分类号： H01L27/14607
摘要： There are provided an imaging device and an electronic device that minimize an ineffective region inside a pixel and achieve reduction in size, high SN, high sensitivity, high resolution, and a reduced afterimage.

8. 发明授权

US08208054B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08208054B2
公开(公告)日：2012-06-26
申请号：US12595229
申请日：2008-04-16
申请人： Takumi Yamaguchi , Sougo Ohta
发明人： Takumi Yamaguchi , Sougo Ohta
IPC分类号： H04N5/335
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14641 , H04N5/37457 , H04N9/045
摘要： A solid state imaging device includes shared amplification transistors and reset transistors arranged, for example, in a checkered pattern so that centroid of photo diodes 2 of the same colors are arranged substantially at an identical pitch. As a result, the resolution of the solid state imaging device can be maintained without considering irregularities of the incident light for each unit pixel.
摘要翻译：固态成像装置包括以例如方格图案布置的共享放大晶体管和复位晶体管，使得相同颜色的光电二极管2的质心基本上以相同的间距排列。结果，可以保持固态成像装置的分辨率，而不考虑每个单位像素的入射光的不规则性。

9. 发明申请

US20100110245A1 SOLID-STATE IMAGING DEVICE 审中-公开
标题翻译：固态成像装置
公开(公告)号：US20100110245A1
公开(公告)日：2010-05-06
申请号：US12595201
申请日：2008-04-16
申请人： Takumi Yamaguchi , Takahiro Iwasawa
发明人： Takumi Yamaguchi , Takahiro Iwasawa
IPC分类号： H04N5/335
CPC分类号： H01L27/14643 , H01L27/14621 , H01L27/14641 , H04N5/37457 , H04N9/07
摘要： A solid-state imaging device according to the present invention comprises: a region (hereinafter, referred to as a pixel cell 100) in which at least a photodiode 101 for performing photoelectric conversion, a readout MOS transistor 102 for reading out from the photodiode 101 an electric charge photoelectrically converted, and a floating diffusion 103 for reading out and storing the electric charge via the readout MOS transistor 102 from the photodiode are arranged; and a region (hereinafter, referred to as a transistor cell 106) which includes an amplifier MOS transistor 105 having a plurality of two or more said pixel cells 100 connected thereto and a reset MOS transistor 104 for resetting a potential of the floating diffusion 103 so as to be a potential the same as a potential of a power source and in which at least the reset MOS transistor 104 and the amplifier MOS transistors 105 are arranged, and the pixel cell 100 and the transistor cell 106 are two-dimensionally arranged.
摘要翻译：根据本发明的固态成像装置包括：至少用于进行光电转换的光电二极管101的区域（以下称为像素单元100），用于从光电二极管101读出的读出MOS晶体管102 布置电光电转换电荷，以及用于通过读出MOS晶体管102从光电二极管读出并存储电荷的浮动扩散部103。以及具有连接有多个2个以上的像素单元100的放大器MOS晶体管105的区域（以下称为晶体管单元106）和用于复位浮置扩散区域103的电位的复位MOS晶体管104 作为与电源的电位相同的电位，并且其中至少布置复位MOS晶体管104和放大器MOS晶体管105，并且像素单元100和晶体管单元106二维布置。

10. 发明授权

US08547458B2 Solid-state image pickup device 失效
标题翻译：固态图像拾取装置
公开(公告)号：US08547458B2
公开(公告)日：2013-10-01
申请号：US13146293
申请日：2010-02-02
申请人： Takahiro Iwasawa
发明人： Takahiro Iwasawa
IPC分类号： H04N3/14 , H04N5/335 , H04N9/04
CPC分类号： H01L27/14603 , H01L27/14641 , H01L27/14643 , H04N5/37457 , H04N5/376
摘要： A solid-state image pickup device includes a pixel array having a plurality of photodiodes that are disposed in a matrix, electric charge transfer gates, and a floating diffusion (FD), and further includes a reset transistor and an amplifier transistor each shared by the four adjacent photodiodes. In the solid-state image pickup device, the photodiodes include first to fourth photodiodes. In a state where the amplifier transistor is activated, electric charge transfer gates connected respectively to the first to fourth photodiodes are sequentially turned ON and electric charges accumulated in the photodiodes are sequentially read out through the FD. Accordingly, a readout blanking period can be minimized to and signal charges can be read out at high speed. Moreover, readout signal lines need only to be provided for every two columns of the photodiodes, so that openings of the photodiodes can be increased in size.
摘要翻译：固体摄像装置包括：具有配置在矩阵中的多个光电二极管的像素阵列，电荷传输门和浮动扩散（FD），还包括复位晶体管和放大晶体管，四个相邻的光电二极管。在固态图像拾取装置中，光电二极管包括第一至第四光电二极管。在放大晶体管被激活的状态下，分别连接到第一至第四光电二极管的电荷传输门依次导通，并且通过FD顺序地读出累积在光电二极管中的电荷。因此，读出消隐期可以最小化并且可以高速读出信号电荷。此外，仅需要为光电二极管的每两列提供读出信号线，使得光电二极管的开口尺寸可以增加。

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