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1. 发明授权

US09368940B2 Semiconductor device and manufacturing method of semiconductor device 有权
标题翻译：半导体器件及半导体器件的制造方法
公开(公告)号：US09368940B2
公开(公告)日：2016-06-14
申请号：US14697908
申请日：2015-04-28
申请人： Renesas Electronics Corporation
发明人： Fumito Miyasaka
IPC分类号： H01S5/00 , H01S5/343 , H01S5/32 , H01S5/323 , H01S5/022 , H01S5/34
CPC分类号： H01S5/34333 , H01S5/02296 , H01S5/106 , H01S5/164 , H01S5/221 , H01S5/2272 , H01S5/3202 , H01S5/32341 , H01S5/34 , H01S5/34346
摘要： To provide a semiconductor laser that suppresses end face destruction due to catastrophic optical damage (COD) to a light emission end face and has high output characteristics.An n-type clad layer, a current block layer, an active layer, and a p-type clad layer are provided over an n-type substrate whose major plane has an off-angle in a direction from a (0001) plane. For example, the current block layer is arranged on both sides of a current constriction area. Then, the current block layer is arranged so as to be retracted from a cleavage plane (line). In this case, in the active layer having a quantum well structure that is crystal-grown over the n-type clad layer and the current block layer, the layer thickness of a window area from the cleavage plane (line) up to the end part of the current block layer is smaller than the layer thickness of the current constriction area (area between the current block layers). As a result, the band gap of the active layer in the window area becomes large, and thus it is possible to suppress end face destruction due to the COD.
摘要翻译：提供半导体激光器，其抑制由于对发光端面的灾难性光学损伤（COD）造成的端面破坏并具有高输出特性。在n型衬底上设置n型覆盖层，电流阻挡层，有源层和p型覆盖层，该n型衬底的主面在（1-100）方向上具有偏离角 0001）面。例如，当前阻挡层布置在电流收缩区域的两侧。然后，将当前的阻挡层布置成从解理面（线）缩回。在这种情况下，在具有在n型覆盖层和当前阻挡层上晶体生长的量子阱结构的有源层中，从解理面（线）到端部的窗口区域的层厚度当前阻挡层的厚度小于电流收缩区域（当前阻挡层之间的面积）的层厚度。结果，窗口区域中的活性层的带隙变大，因此可以抑制由于COD引起的端面破坏。

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