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1. 发明公开

KR20070094572A MEMORY MODULE HAVING A COOLING MEANS, METHOD FOR PRODUCING THE MEMORY MODULE HAVING A COOLING MEANS, AND DATA PROCESSING DEVICE COMPRISING A MEMORY MODULE HAVING A COOLING MEANS 审中-公开
标题翻译：具有冷却装置的存储模块，用于生产具有冷却装置的存储模块的方法，以及包含具有冷却装置的存储模块的数据处理装置
公开(公告)号：KR20070094572A
公开(公告)日：2007-09-20
申请号：KR20070026344
申请日：2007-03-16
申请人： QIMONDA AG
发明人： LEGEN ANTON , MORGENROTH LUTZ , NEUMAIER KLAUS , WOOD STEVE
IPC分类号： G06F1/20
CPC分类号： H01L23/3672 , H01L2924/0002 , H01L2924/00
摘要： A memory module having a cooling unit, a method for producing the memory module having the cooling unit, and a data processing device including a memory module with the cooling unit are provided to avoid overheated memory modules by improving heat dissipation from the memory modules by enabling improved air flowing between adjacent memory modules. A memory module(100) includes a board with a surface(2) where at least one first electronic component and at least one second electronic component, and a cooling element(210) having a first section(214) with a first end part(216), which is arranged on the surface of the board and extended in a first direction, and a second end part(217) which is extended in a first direction. At least one or more stabilizing elements(211,212) are arranged to be extended in the first direction to the first end part and the second end part of the first section of the cooling element. The cooling element has a second section(215). The cooling element has a surface(213) spaced from the surface of the board. The surface(213) of the first section of the cooling element is away from a first distance(D1) from the surface of the board. The surface(213) of the first section of the cooling element is away from a second distance(D2) from the surface of the board, and the first distance and the second distance are different from each other.
摘要翻译：具有冷却单元的存储模块，用于制造具有冷却单元的存储器模块的方法以及包括具有冷却单元的存储器模块的数据处理装置，以通过使得能够通过使能存储器模块的散热来改善来自存储器模块的散热来避免过热的存储器模块在相邻存储器模块之间改进的空气流动。存储器模块（100）包括具有表面（2）的板，其中至少一个第一电子部件和至少一个第二电子部件以及具有第一部分（214）的冷却元件（210），该第一部分具有第一端部 216），其布置在所述板的表面上并沿第一方向延伸;以及第二端部（217），其沿第一方向延伸。至少一个或多个稳定元件（211,212）被布置成沿着第一方向延伸到冷却元件的第一部分的第一端部部分和第二端部部分。冷却元件具有第二部分（215）。冷却元件具有与板的表面间隔开的表面（213）。冷却元件的第一部分的表面（213）离开板的表面离开第一距离（D1）。冷却元件的第一部分的表面（213）远离板的表面的第二距离（D2），并且第一距离和第二距离彼此不同。

2. 发明申请

WO2007090648A1 MEMORY HAVING NANOTUBE TRANSISTOR ACCESS DEVICE 审中-公开
标题翻译：具有纳米管晶体管访问器件的存储器
公开(公告)号：WO2007090648A1
公开(公告)日：2007-08-16
申请号：PCT/EP2007/001086
申请日：2007-02-08
申请人： QIMONDA AG , KAKOSCHKE, Ronald , NIRSCHL, Thomas
发明人： KAKOSCHKE, Ronald , NIRSCHL, Thomas
IPC分类号： G11C13/02
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/1659 , G11C11/22 , G11C13/0004 , G11C13/0011 , G11C13/003 , G11C23/00 , G11C2213/17 , G11C2213/71 , G11C2213/79 , H01L27/228 , H01L27/2436 , H01L27/2463 , H01L27/2481 , H01L29/0669 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L51/0048 , H01L51/0508
摘要： A memory cell includes a memory dement and a nanotube transistor contacting the memory element for accessing the memory dement.
摘要翻译：存储单元包括存储器和接触存储器元件的纳米管晶体管，用于访问存储器。

3. 发明公开

KR20070093879A SEMICONDUCTOR DEVICE HAVING A PLURALITY OF SEMICONDUCTOR CHIPS WHICH ARE PACKAGED IN A COMMON HOUSING, AND SEMICONDUCTOR CHIPS WHICH ARE SET UP FOR THIS PURPOSE 审中-公开
标题翻译：具有包含在共同住宅中的多个半导体器件的半导体器件以及为此目的设定的半导体器件
公开(公告)号：KR20070093879A
公开(公告)日：2007-09-19
申请号：KR20070024809
申请日：2007-03-14
申请人： QIMONDA AG
发明人： POECHMUELLER PETER
IPC分类号： G11C7/10 , G11C5/06 , H01L23/12
CPC分类号： H01L23/50 , H01L23/64 , H01L24/48 , H01L25/0657 , H01L2224/16 , H01L2224/16225 , H01L2224/48091 , H01L2225/06527 , H01L2924/00014 , H01L2924/13091 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device and semiconductor chips are provided to increase signal propagation speed without design change of the semiconductor device by reducing interference parasitic capacitance acting on a critical signal line. In a semiconductor device in which a plurality of semiconductor chips(or dies) is packaged in a common housing and a signal pad transferring a critical signal to each chip is terminated by a terminating resistance(RT), only a part of at least two signal pads(P1,P2), which is adjacent and connected to each other and arranged on different chips and transfer the same signal, is terminated by the terminating resistance.
摘要翻译：提供半导体器件和半导体芯片以通过减少作用在关键信号线上的干扰寄生电容来提高信号传播速度，而不会改变半导体器件的设计变化。在其中将多个半导体芯片（或管芯）封装在公共外壳中并且将关键信号传送到每个芯片的信号焊盘由终端电阻（RT）终止的半导体器件中，仅一部分至少两个信号相邻并相互连接并布置在不同芯片上并传送相同信号的焊盘（P1，P2）由端接电阻终止。

4. 发明公开

KR20070077463A METHOD OF SYSTEM BOOTING WITH A DIRECT MEMORY ACCESS IN A NEW MEMORY ARCHITECTURE 审中-公开
标题翻译：在新的存储器架构中使用直接存储器访问的系统方法
公开(公告)号：KR20070077463A
公开(公告)日：2007-07-26
申请号：KR20070006722
申请日：2007-01-22
申请人： QIMONDA AG
发明人： KAO ROM SHEN
IPC分类号： G06F9/24 , G06F9/44 , G06F9/445 , G06F12/00
CPC分类号： G06F9/4403 , G06F8/751 , G06F9/24 , G06F9/4401 , G06F9/445 , G06F9/44578 , G06F12/1081 , G06F13/1673
摘要： A method for booting a computer system, the method for loading a boot code, a DRAM device, and an embedded system including the same are provided to reduce complexity of a host processor and the embedded system by offloading processing load for booting the embedded system to a volatile memory from the host processor. The embedded system includes the host processor(102), a NAND flash memory(130), and the DRAM device(110). The DRAM device includes a processor interface, a NAND flash memory interface(122), buffer(106,116), an SRAM array(108), and a DMA(Direct Memory Access) engine(120). The DRM engine automatically performs DMA transfer for transferring the boot code to the buffer from the NAND flash memory by detecting booting of the embedded system. The processor reads and executes the boot code stored in the buffer, and issues a command to the DMA engine in response to execution of the boot code. The DMA engine automatically transfers an OS(Operating System) code to the SRAM array from the NAND flash memory by responding to the issued command.
摘要翻译：提供了引导计算机系统的方法，用于加载引导代码的方法，DRAM设备和包括其的嵌入式系统，以通过将用于引导嵌入式系统的处理负载卸载来降低主机处理器和嵌入式系统的复杂性来自主处理器的易失性存储器。嵌入式系统包括主处理器（102），NAND快闪存储器（130）和DRAM设备（110）。 DRAM设备包括处理器接口，NAND闪存接口（122），缓冲器（106,116），SRAM阵列（108）和DMA（直接存储器访问）引擎（120）。 DRM引擎自动执行DMA传输，通过检测嵌入式系统的引导，将启动代码从NAND闪存传输到缓冲区。处理器读取并执行存储在缓冲器中的引导代码，并响应于引导代码的执行向DMA引擎发出命令。 DMA引擎通过响应发出的命令自动将NAND（NAND闪存）的OS（操作系统）代码传输到SRAM阵列。

5. 发明公开

KR20070092124A MEMORY DEVICE AND METHOD FOR OPERATING SUCH A MEMORY DEVICE 审中-公开
标题翻译：用于操作这种存储器件的存储器件和方法
公开(公告)号：KR20070092124A
公开(公告)日：2007-09-12
申请号：KR20070021831
申请日：2007-03-06
申请人： QIMONDA AG
发明人： HOENIGSCHMID HEINZ , LIAW CORVIN
IPC分类号： G11C13/02 , G11C7/00
CPC分类号： H01L27/24 , G11C13/0004 , G11C2213/79
摘要： A memory device and a method for operating the same are provided to operate a memory device allowing a higher current through an active material related with the width of a switching device, and to provide a plurality of memory cells, especially PCM(Phase Change Material) memory cells, to the memory device. A memory device having at least one memory cell includes an active material(1) and a current supply line. A first switching device switches a first current through the active material from the current supply line. The memory cell includes at least one additional switching device switching an additional current through the active material from the current supply line. The memory cells are resistive switching memory cells.
摘要翻译：提供了一种存储器件及其操作方法以操作存储器件，其允许通过与开关器件的宽度相关的活性材料的较高电流，并提供多个存储器单元，特别是PCM（相变材料）存储单元，到存储器件。具有至少一个存储单元的存储器件包括活性材料（1）和电流供应线。第一开关装置从当前电源线切换通过活性材料的第一电流。存储单元包括至少一个额外的开关装置，从电流供应管线切换穿过活性材料的附加电流。存储单元是电阻式开关存储单元。

6. 发明公开

KR20070089654A SEMICONDUCTOR DEVICE AND METHOD OF PRODUCTION 审中-公开
标题翻译：半导体器件及其生产方法
公开(公告)号：KR20070089654A
公开(公告)日：2007-08-31
申请号：KR20070020619
申请日：2007-02-28
申请人： QIMONDA AG
发明人： OLLIGS DOMINIK , POLEI VERONIKA
IPC分类号： H01L21/336 , H01L21/304
CPC分类号： H01L21/0206 , H01L21/28061 , H01L21/32139 , H01L29/4941
摘要： A semiconductor device and its manufacturing method are provided to prevent the deposition of an unwanted material in a cleaning agent treatment on a hard mask by using an improved conductive cover layer structure. A semiconductor device includes a body, one or more metal films and a conductive cover layer. The body is made of a semiconductor material. The body has a main surface. The metal films are formed on the main surface of the body. The conductive cover layer(7) is formed on the metal films. The conductive cover layer is made of a different material from those of the metal films. A structural layer order is defined at the metal films and the conductive cover layer by a lateral boundary portion. The semiconductor device further includes a hard mask layer overlapped with the conductive cover layer. A nitride layer is capable of being additionally formed on the conductive cover layer. The conductive cover layer contains a semiconductor material. The conductive cover layer contains polysilicon.
摘要翻译：提供半导体器件及其制造方法，以通过使用改进的导电覆盖层结构来防止在清洁剂处理中的不需要的材料沉积在硬掩模上。半导体器件包括主体，一个或多个金属膜和导电覆盖层。身体由半导体材料制成。身体有一个主表面。金属膜形成在主体的主表面上。导电覆盖层（7）形成在金属膜上。导电覆盖层由与金属膜不同的材料制成。通过横向边界部分在金属膜和导电覆盖层上限定结构层顺序。半导体器件还包括与导电覆盖层重叠的硬掩模层。能够在导电覆盖层上另外形成氮化物层。导电覆盖层包含半导体材料。导电覆盖层含有多晶硅。

7. 发明公开

KR20070080604A MEMORY FOR THERMAL ISOLATION OF PHASE CHANGE MEMORY CELLS, SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING A MEMORY 审中-公开
标题翻译：用于热分离相变记忆体的存储器，半导体存储器件和用于制造存储器的方法
公开(公告)号：KR20070080604A
公开(公告)日：2007-08-10
申请号：KR20070012960
申请日：2007-02-07
申请人： QIMONDA NORTH AMERICA CORP , QIMONDA AG
发明人： GRUENING VON SCHWERIN ULRIKE , HAPP THOMAS , PHILIPP JAN BORIS
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L45/144 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/128 , H01L45/1293 , H01L45/148 , G11C13/0004
摘要： A memory for thermal isolation of a phase change memory cell is provided to reduce thermal cross-talk and improve data retention by thermally isolating adjacent phase change memory cells. A memory is composed of an array of resistive memory cells, bitlines(112) formed between the rows of the memory cells, and a conductive plate coupled to each memory cell wherein the memory cells are accessed by the bitlines. The conductive plate can include a ground plate. The memory cells can include phase change memory cells(104).
摘要翻译：提供用于相变存储器单元的热隔离的存储器，以通过热隔离相邻的相变存储器单元来减少热串扰并提高数据保持。存储器由电阻存储器单元的阵列，形成在存储器单元的行之间的位线（112）和耦合到每个存储器单元的导电板组成，其中存储器单元被位线访问。导电板可以包括接地板。存储器单元可以包括相变存储单元（104）。

8. 发明申请

WO2007098946A1 SIGNAL ROUTING IN A MULTILAYERED PRINTED CIRCUIT BOARD 审中-公开
标题翻译：信号路由在多层打印电路板上
公开(公告)号：WO2007098946A1
公开(公告)日：2007-09-07
申请号：PCT/EP2007/001761
申请日：2007-03-01
申请人： QIMONDA AG , DJORDJEVIC, Srdjan , OESCHAY, Peter
发明人： DJORDJEVIC, Srdjan , OESCHAY, Peter
IPC分类号： H05K1/02
CPC分类号： H05K1/0245 , H01P3/081 , H01P3/085 , H05K1/117 , H05K1/14 , H05K3/429 , H05K3/4623 , H05K2201/0352 , H05K2201/09236 , H05K2201/09509 , H05K2201/09536 , H05K2201/09627
摘要： A signal routing technique for a multilayered printed circuit board is provided. The multilayered printed circuit board comprises a top layer, a bottom layer and at least one internal layer. Signals for a first subset of a plurality of higher speed buses are routed in stripline on the first internal layer. Signals for a second subset of said plurality of higher speed buses in microstrip on the top layer.
摘要翻译：提供了一种用于多层印刷电路板的信号路由技术。多层印刷电路板包括顶层，底层和至少一个内层。用于多条高速总线的第一子集的信号在带状线路上路由在第一内层上。在顶层中的微带中的所述多个更高速总线的第二子集的信号。

9. 发明申请

WO2007045498A3 PHOTOSENSITIVE COATING FOR ENHANCING A CONTRAST OF A PHOTOLITHOGRAPHIC EXPOSURE 审中-公开
标题翻译：用于增强光刻曝光对比度的感光涂料
公开(公告)号：WO2007045498A3
公开(公告)日：2007-07-26
申请号：PCT/EP2006010149
申请日：2006-10-20
申请人： QIMONDA AG , ELIAN KLAUS , NOELSCHER CHRISTOPH
发明人： ELIAN KLAUS , NOELSCHER CHRISTOPH
IPC分类号： G03F7/095 , G03F7/09
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/091 , G03F7/094
摘要： A photosensitive coating material for enhancing a contrast of a photolithographic exposure of a resist film formed on a substrate, including a base polymer, a solvent for facilitating deposition of the photosensitive coating material upon a surface adjacent to said resist film to form a film thereupon, an alkaline additive suited to diffuse into the adjacent resist for reducing or neutralizing an acid concentration formed locally therein, a photoactive component arranged to reduce or neutralize a concentration of the alkaline additives in portions of the photosensitive coating, which are exposed with optical light, UV- or X-ray radiation, electrons, charged particles, ion projection lithography.
摘要翻译：一种用于增强形成在基底上的抗蚀剂膜的光刻曝光的对比度的感光涂层材料，包括基础聚合物，用于促进感光涂层材料沉积在与所述抗蚀剂膜相邻的表面上形成膜的溶剂，适合于扩散到相邻抗蚀剂中以减少或中和其中局部形成的酸浓度的碱性添加剂，被配置为减少或中和感光涂层部分中用光学照射UV的部分中的碱性添加剂的浓度的光活性组分 - 或X射线辐射，电子，带电粒子，离子投影光刻。

10. 发明申请

WO2007080097A1 MEMORY HAVING STATUS REGISTER READ FUNCTION 审中-公开
标题翻译：具有状态寄存器读取功能的存储器
公开(公告)号：WO2007080097A1
公开(公告)日：2007-07-19
申请号：PCT/EP2007/000122
申请日：2007-01-09
申请人： QIMONDA AG , DENG, Yuqing , FREEBERN, Margaret , SCHNELL, Josef , SHRESTHA, Bhaskar
发明人： DENG, Yuqing , FREEBERN, Margaret , SCHNELL, Josef , SHRESTHA, Bhaskar
IPC分类号： G11C7/24 , G11C7/10
CPC分类号： G11C7/1078 , G11C7/109 , G11C7/22 , G11C11/4076 , G11C11/4093
摘要： A memory, in particular an SDRAM, includes a status register (108) and a read/write data bus (230) . The status register (108) is configured to pass status register values, such as a chip ID or serial number, to the read/write data bus (230) in response to a status register read command.
摘要翻译：存储器，特别是SDRAM，包括状态寄存器（108）和读/写数据总线（230）。状态寄存器（108）被配置为响应于状态寄存器读取命令将诸如芯片ID或序列号的状态寄存器值传送到读/写数据总线（230）。

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