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1. 发明授权

US5856239A Tungsten silicide/ tungsten polycide anisotropic dry etch process 失效
标题翻译：硅化钨/聚硅氧烷多向干蚀刻工艺
公开(公告)号：US5856239A
公开(公告)日：1999-01-05
申请号：US850573
申请日：1997-05-02
申请人： Rashid Bashir , Abul Ehsanul Kabir , Francois Hebert
发明人： Rashid Bashir , Abul Ehsanul Kabir , Francois Hebert
IPC分类号： H01L21/3213 , H01L21/00
CPC分类号： H01L21/32137
摘要： A process for anisotropically etching a tungsten silicide or tungsten polycide structure. If the silicide/polycide film has an overlying oxide layer, the insulating layer is removed by a gas mixture composed of CHF.sub.3 and C.sub.2 F.sub.6. The WSi.sub.x silicide layer is then etched in a reactive ion etch using a gas mixture formed from Cl.sub.2 and C.sub.2 F.sub.6, with sufficient O.sub.2 added to control polymer formation and prevent undercutting of the silicide. The polysilicon layer is then etched using a gas mixture formed from Cl.sub.2 and C.sub.2 F.sub.6. The result is a highly anisotropic etch process which preserves the critical dimension of the etched structures. The etch parameters may be varied to produce a tapered sidewall profile for use in the formation of butted contacts without the need for a contact mask.
摘要翻译：用于各向异性蚀刻硅化钨或聚钨酸钨结构的方法。如果硅化物/多硅化物膜具有上覆氧化物层，则通过由CHF 3和C 2 F 6组成的气体混合物除去绝缘层。然后使用由Cl 2和C 2 F 6形成的气体混合物在反应离子蚀刻中对WSix硅化物层进行蚀刻，加入足够的O 2以控制聚合物形成并防止硅化物的底切。然后使用由Cl 2和C 2 F 6形成的气体混合物来蚀刻多晶硅层。结果是高度各向异性的蚀刻工艺，其保留蚀刻结构的临界尺寸。可以改变蚀刻参数以产生用于形成对接触点的锥形侧壁轮廓，而不需要接触掩模。

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