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1. 发明申请

WO1997045880A1 METHOD FOR FORMING CdTe FILM AND SOLAR BATTERY USING THE FILM 审中-公开
标题翻译：使用电影形成CdTe薄膜和太阳能电池的方法
公开(公告)号：WO1997045880A1
公开(公告)日：1997-12-04
申请号：PCT/JP1997001791
申请日：1997-05-27
申请人： MATSUSHITA BATTERY INDUSTRIAL CO., LTD. , HIGUCHI, Hiroshi , KUMAZAWA, Seiji , ARITA, Takashi , HANAFUSA, Akira , MUROZONO, Mikio , ARAMOTO, Tetsuya
发明人： MATSUSHITA BATTERY INDUSTRIAL CO., LTD.
IPC分类号： H01L31/04
CPC分类号： H01L31/073 , C23C14/0629 , H01L21/02422 , H01L21/02474 , H01L21/02491 , H01L21/02502 , H01L21/02562 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02631 , H01L31/022466 , H01L31/046 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： A method for forming a high-quality CdTe film by an improved proximity sublimation method. The method includes a step in which a film containing a CdTe semiconductor material is formed on the surface of a support by applying paste containing the semiconductor material to the surface of the support, a second step in which the support and a substrate on which the CdTe film is to be formed are placed closely to each other so that the film faces to the surface of the substrate, and a third step in which the CdTe film is formed on the substrate by vaporizing the semiconductor material in the film by heating the film and substrate.
摘要翻译：通过改进的接近升华方法形成高品质CdTe膜的方法。该方法包括以下步骤：通过将含有半导体材料的糊料涂覆在载体的表面上，在支撑体的表面上形成含有CdTe半导体材料的膜，第二步骤，其中载体和CdTe 将要形成的膜彼此紧密地放置，使得膜面向基板的表面;以及第三步骤，其中通过加热膜来使膜中的半导体材料蒸发而在基板上形成CdTe膜，基质。

2. 发明申请

US20040219431A1 Non-aqueous electrolyte secondary battery 失效
标题翻译：非水电解质二次电池
公开(公告)号：US20040219431A1
公开(公告)日：2004-11-04
申请号：US10833141
申请日：2004-04-28
申请人： MATSUSHITA BATTERY INDUSTRIAL CO., LTD.
发明人： Yoshiyuki Ozaki , Kazuhiro Ota , Junichi Yamaura , Takabumi Fujii
IPC分类号： H01M004/58 , H01M004/48
CPC分类号： H01M10/0525 , H01M4/131 , H01M4/133 , H01M4/1395 , H01M4/505 , H01M4/525 , H01M4/587 , H01M10/44 , H01M2004/027 , H01M2010/4292 , Y02T10/7011
摘要： A non-aqueous electrolyte secondary battery, comprises positive and negative electrode plates, each comprising a current collector and a material mixture layer carried on each face thereof. A total thickness of the positive electrode material mixture layers on both faces of the current collector is 40 nullm to 100 nullm. The positive electrode plate has an electrode area of 520 cm2 to 800 cm2 per battery capacity of 1 Ah. The negative electrode material mixture layer comprises a graphitizable carbon material. A wide-range X-ray diffraction pattern of the graphitizable carbon material has a peak PX (101) attributed to a (101) crystal face at about 2nullnull44 degrees, and a peak PX (100) attributed to a (100) crystal face at about 2nullnull42 degrees. A ratio of an intensity IX (101) of PX (101) to an intensity IX (100) of PX(100) satisfies: 0

3. 发明授权

US5920798A Method of preparing a semiconductor layer for an optical transforming device 失效
标题翻译：制备光转换装置的半导体层的方法
公开(公告)号：US5920798A
公开(公告)日：1999-07-06
申请号：US864624
申请日：1997-05-28
申请人： Hiroshi Higuchi , Akira Hanafusa , Kuniyoshi Omura , Mikio Murozono , Hideaki Oyama
发明人： Hiroshi Higuchi , Akira Hanafusa , Kuniyoshi Omura , Mikio Murozono , Hideaki Oyama
IPC分类号： C23C18/06 , H01L31/073 , H01L31/18 , C07F3/06
CPC分类号： H01L31/073 , C23C18/06 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： A semiconductor layer for photoelectric transfer device for forming a p-n junction, which has large surface area and uniform film pressure, is formed in the atmosphere under normal pressure for several minutes. The semiconductor layer for forming a p-n junction is composed of a compound semiconductor of a Group II element(selected from the group consisting of Cd, Zn and Hg)-Group VI element(selected from the group consisting of S and Te). A semiconductor layer having a p or n conductive type is formed on a substrate by pyrolytically decomposing an organometallic compound containing a II-VI group atom bond. A semiconductor film is formed on the surface of a substrate by dispersing or dissolving an organometallic compound in a solvent to form a solution, applying ink on the surface of the substrate using a suitable printing method and subjecting to a heat treatment.
摘要翻译：在大气中在常压下形成用于形成p-n结的用于形成p-n结的半导体层，其具有大的表面积和均匀的膜压力，持续数分钟。用于形成p-n结的半导体层由II族元素（选自Cd，Zn和Hg）-VI族元素（选自S和Te）的化合物半导体组成。通过热分解含有II-VI族原子键的有机金属化合物，在基板上形成具有p或n导电型的半导体层。通过将有机金属化合物分散或溶解在溶剂中以形成溶液，在基材的表面上形成半导体膜，使用合适的印刷方法在基材的表面上涂布油墨并进行热处理。

4. 发明授权

US5994642A Method for preparing CdTe film and solar cell using the same 失效
标题翻译：使用该CdTe薄膜和太阳能电池的方法
公开(公告)号：US5994642A
公开(公告)日：1999-11-30
申请号：US89
申请日：1998-03-13
申请人： Hiroshi Higuchi , Seiji Kumazawa , Takashi Arita , Akira Hanafusa , Mikio Murozono , Tetsuya Aramoto
发明人： Hiroshi Higuchi , Seiji Kumazawa , Takashi Arita , Akira Hanafusa , Mikio Murozono , Tetsuya Aramoto
IPC分类号： C23C14/06 , H01L21/363 , H01L27/142 , H01L31/073 , H01L31/18 , H01L31/00
CPC分类号： H01L31/073 , C23C14/0629 , H01L21/02422 , H01L21/02474 , H01L21/02491 , H01L21/02502 , H01L21/02562 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02631 , H01L31/022466 , H01L31/046 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： A method for forming a CdTe film of good quality by an improved close-spaced sublimation process is disclosed. This method comprises: a step of applying a paste which contains material for CdTe semiconductor on a supporting member, thereby to form a coating film which contains the material for the semiconductor on the surface of the supporting member; a step of closely arranging the supporting member and a substrate on which a CdTe film is to be formed, to make the coating film to face the surface of the substrate; and a step of forming a CdTe film on the substrate, by heating the coating film and the substrate, and causing the material for the semiconductor in the coating film to evaporate.
摘要翻译： PCT No.PCT / JP97 / 01791 Sec。 371日期1998年3月13日 102（e）1998年3月13日PCT PCT 1997年5月27日PCT公布。公开号WO97 / 45880 PCT 日期1997年12月4日公开了通过改进的紧密间隔升华法形成质量好的CdTe膜的方法。该方法包括：在支撑体上涂敷含有CdTe半导体材料的糊状物，形成在支撑体表面含有半导体材料的涂膜的工序; 紧密配置支撑部件的步骤和要形成CdTe膜的基板，以使涂膜面对基板的表面; 以及在基板上形成CdTe膜的步骤，通过加热涂膜和基板，并使涂膜中的半导体材料蒸发。

5. 发明授权

US07374842B2 Non-aqueous electrolyte secondary battery 失效
标题翻译：非水电解质二次电池
公开(公告)号：US07374842B2
公开(公告)日：2008-05-20
申请号：US10833141
申请日：2004-04-28
申请人： Yoshiyuki Ozaki , Kazuhiro Ota , Junichi Yamaura , Takabumi Fujii
发明人： Yoshiyuki Ozaki , Kazuhiro Ota , Junichi Yamaura , Takabumi Fujii
IPC分类号： H01M4/58 , H01M10/40
CPC分类号： H01M10/0525 , H01M4/131 , H01M4/133 , H01M4/1395 , H01M4/505 , H01M4/525 , H01M4/587 , H01M10/44 , H01M2004/027 , H01M2010/4292 , Y02T10/7011
摘要： A non-aqueous electrolyte secondary battery, comprises positive and negative electrode plates, each comprising a current collector and a material mixture layer carried on each face thereof. A total thickness of the positive electrode material mixture layers on both faces of the current collector is 40 μm to 100 μm. The positive electrode plate has an electrode area of 520 cm2 to 800 cm2 per battery capacity of 1 Ah. The negative electrode material mixture layer comprises a graphitizable carbon material. A wide-range X-ray diffraction pattern of the graphitizable carbon material has a peak PX (101) attributed to a (101) crystal face at about 2θ=44 degrees, and a peak PX (100) attributed to a (100) crystal face at about 2θ=42 degrees. A ratio of an intensity IX (101) of PX (101) to an intensity IX (100) of PX(100) satisfies: 0
摘要翻译：非水电解质二次电池包括正极板和负极板，每个均包含集电体和在其每个表面上承载的材料混合物层。集电体的两面的正极合剂层的总厚度为40μm〜100μm。正电极板的电池容量为1 Ah的电极面积为520cm 2〜800cm 2/2。负极材料混合物层包括可石墨化的碳材料。可石墨化碳材料的宽范围X射线衍射图谱具有归属于大约2θ= 44度的（101）晶面的峰值PX（101）和归因于（100）晶体的峰值PX（100）面对约2theta = 42度。 PX（101）的强度IX（101）与PX（100）的强度IX（100）的比率满足：0

6. 发明授权

EP0853345B1 METHOD FOR FORMING CdTe FILM 失效
标题翻译：制造方法CdTe层
公开(公告)号：EP0853345B1
公开(公告)日：2004-02-18
申请号：EP97922196.7
申请日：1997-05-27
申请人： Matsushita Battery Industrial Co Ltd
发明人： HIGUCHI, Hiroshi , KUMAZAWA, Seiji , ARITA, Takashi , HANAFUSA, Akira , MUROZONO, Mikio , ARAMOTO, Tetsuya
IPC分类号： H01L31/18 , H01L31/072 , H01L31/04 , H01L21/363
CPC分类号： H01L31/073 , C23C14/0629 , H01L21/02422 , H01L21/02474 , H01L21/02491 , H01L21/02502 , H01L21/02562 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02631 , H01L31/022466 , H01L31/046 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： A method for forming a high-quality CdTe film by an improved proximity sublimation method. The method includes a step in which a film containing a CdTe semiconductor material is formed on the surface of a support by applying paste containing the semiconductor material to the surface of the support, a second step in which the support and a substrate on which the CdTe film is to be formed are placed closely to each other so that the film faces to the surface of the substrate, and a third step in which the CdTe film is formed on the substrate by vaporizing the semiconductor material in the film by heating the film and substrate.

7. 发明公开

EP0962990A2 Method of fabricating a solar cell 审中-公开
标题翻译：太阳能电池的制造方法
公开(公告)号：EP0962990A2
公开(公告)日：1999-12-08
申请号：EP99109370.9
申请日：1999-06-01
申请人： Matsushita Battery Industrial Co., Ltd.
发明人： Hanafusa, Akira , Kumazawa, Seiji , Murozono, Mikio
IPC分类号： H01L31/18 , H01L31/072 , H01L27/142
CPC分类号： H01L31/073 , H01L31/046 , H01L31/0463 , Y02E10/543 , Y02P70/521
摘要： The present invention provides of a method of fabricating, with a high degree of production efficiency, a high photoelectric efficiency solar cell having a large inter-cell separation resistance. The solar cell fabrication process of the invention comprises the steps of: forming a transparent conductive film (11) on a transparent insulating substrate (10), and forming a cadmium sulfide film (2) on the transparent conductive film (11), and dividing together the transparent conductive film (11) and the cadmium sulfide film (2) into portions for respective unit cells in the same prescribed pattern by radiating a laser beam onto the cadmium sulfide film (2) in the prescribed pattern and thereby removing simultaneously the cadmium sulfide film (2) and the transparent conductive film (11) at portions thereof lying below the irradiated portions.

8. 发明公开

EP1033763A1 Method of manufacturing a compound semiconductor thin film and a solar cell using the thin film 审中-公开
标题翻译：一种用于制造半导体薄膜的方法，以及具有该薄膜太阳能电池
公开(公告)号：EP1033763A1
公开(公告)日：2000-09-06
申请号：EP99102858.0
申请日：1999-03-02
申请人： Matsushita Battery Industrial Co., Ltd.
发明人： Nishio, Tsuyoshi , Omura, Kuniyoshi , Hibino, Takeshi , Shibutani, Satoshi , Murozono, Mikio
IPC分类号： H01L31/072 , C23C16/30 , C23C16/44 , H01L31/18
CPC分类号： H01L31/073 , C23C16/18 , C23C16/306 , H01L31/1828 , Y02E10/541 , Y02E10/543 , Y02P70/521
摘要： The present invention relates to a method of manufacturing a compound semiconductor thin film by the thermal decomposition of a metal organic compound and a solar cell using the above thin film. An organic solvent solution of the metal organic compound containing at least one metal-sulfur bond is pulverized into fine particles by an ultrasonic vibration method or by a spray injection method and the obtained fine particles or gaseous metal organic compound are thermally decomposed by contacting them on the heated surface of a thin film forming substrate and thus a compound semiconductor metal sulfide thin film is formed on the thin film forming substrate. With this method, a compound semiconductor thin film of large surface area with uniform quality can be manufactured at low manufacturing cost with good reproducibility. These metal sulfide thin films are of high purity, high density and high quality and thus can be used for various photo-electronic devices.
摘要翻译：本发明涉及通过有机金属化合物的热分解和使用上述薄膜太阳能电池制造化合物半导体薄膜的方法。含有至少一种金属 - 硫键的有机金属化合物的有机溶剂溶液是通过在超声波振动法或通过喷雾喷射法和粉碎成细颗粒通过接触它们得到的细颗粒或气态有机金属化合物热分解的薄膜的形成的衬底被加热的表面，因此化合物半导体金属硫化物薄膜形成在薄膜形成的衬底。利用这种方法，大的表面面积的均匀质量的化合物半导体薄膜可以在具有良好再现性低的制造成本制造。这些金属硫化物薄膜是高纯度，高密度和高品质的，因此可以用于各种光的电子器件。

9. 发明公开

EP0962990A3 Method of fabricating a solar cell 审中-公开
标题翻译： Herstellungsverfahren von Solarzellen
公开(公告)号：EP0962990A3
公开(公告)日：2000-05-10
申请号：EP99109370.9
申请日：1999-06-01
申请人： Matsushita Battery Industrial Co., Ltd.
发明人： Hanafusa, Akira , Kumazawa, Seiji , Murozono, Mikio
IPC分类号： H01L31/18 , H01L31/072 , H01L27/142
CPC分类号： H01L31/073 , H01L31/046 , H01L31/0463 , Y02E10/543 , Y02P70/521
摘要： The present invention provides a method of fabricating, with a high degree of production efficiency, a high photoelectric efficiency solar cell having a large inter-cell separation resistance. The solar cell fabrication process of the invention comprises the steps of: forming a transparent conductive film (11) on a transparent insulating substrate (10), and forming a cadmium sulfide film (2) on the transparent conductive film (11), and dividing together the transparent conductive film (11) and the cadmium sulfide film (2) into portions for respective unit cells in the same prescribed pattern by radiating a laser beam onto the cadmium sulfide film (2) in the prescribed pattern and thereby removing simultaneously the cadmium sulfide film (2) and the transparent conductive film (11) at portions thereof lying below the irradiated portions.
摘要翻译：本发明提供一种以高生产效率制造具有大的电池间隔离电阻的高光电效率太阳能电池的方法。本发明的太阳能电池制造方法包括以下步骤：在透明绝缘基板（10）上形成透明导电膜（11），并在透明导电膜（11）上形成硫化镉膜（2）通过以规定的图案将激光束照射到硫化镉膜（2）上，将透明导电膜（11）和硫化镉膜（2）分成相同规定图案的各单元电池的一部分，从而同时除去镉硫化物膜（2）和透明导电膜（11）位于照射部分的下方。

10. 发明公开

EP0853345A1 METHOD FOR FORMING CdTe FILM AND SOLAR BATTERY USING THE FILM 失效
标题翻译： VERFAHREN ZUR HERSTELLUNG EINER CDTE-SCHICHT
公开(公告)号：EP0853345A1
公开(公告)日：1998-07-15
申请号：EP97922196.7
申请日：1997-05-27
申请人： Matsushita Battery Industrial Co Ltd
发明人： HIGUCHI, Hiroshi , KUMAZAWA, Seiji , ARITA, Takashi , HANAFUSA, Akira , MUROZONO, Mikio , ARAMOTO, Tetsuya
IPC分类号： H01L31/18 , H01L31/072 , H01L31/04 , H01L21/363
CPC分类号： H01L31/073 , C23C14/0629 , H01L21/02422 , H01L21/02474 , H01L21/02491 , H01L21/02502 , H01L21/02562 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02631 , H01L31/022466 , H01L31/046 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： A method for forming a CdTe film of good quality by an improved close-spaced sublimation process is disclosed. This method comprises: a step of applying a paste which contains material for CdTe semiconductor on a supporting member, thereby to form a coating film which contains the material for the semiconductor on the surface of the supporting member; a step of closely arranging the supporting member and a substrate on which a CdTe film is to be formed, to make the coating film to face the surface of the substrate; and a step of forming a CdTe film on the substrate, by heating the coating film and the substrate, and causing the material for the semiconductor in the coating film to evaporate.
摘要翻译：公开了通过改进的紧密间隔升华方法形成质量好的CdTe膜的方法。该方法包括：在支撑体上涂敷含有CdTe半导体材料的糊状物，形成在支撑体表面含有半导体材料的涂膜的工序; 紧密配置支撑部件的步骤和要形成CdTe膜的基板，以使涂膜面对基板的表面; 以及通过加热涂膜和基板，并使涂膜中的半导体材料蒸发而在基板上形成CdTe膜的步骤。

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