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1. 发明授权

US08621941B2 Feedback system for identifying movement and intensity of external force 有权
标题翻译：用于识别外力的运动和强度的反馈系统
公开(公告)号：US08621941B2
公开(公告)日：2014-01-07
申请号：US12910797
申请日：2010-10-23
申请人： Jia-Xin Mei , Gang Li , Hong-Yuan Yang
发明人： Jia-Xin Mei , Gang Li , Hong-Yuan Yang
IPC分类号： G01L1/02 , G01L1/22 , G01L1/04
CPC分类号： G06F3/0414 , G06F3/0338 , G06F3/041 , H01L2224/48091 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A feedback system for identifying an external force, includes an operation plate and a pressure-sensing unit. The pressure-sensing unit includes an elastic member supporting the operation plate and a pressure sensor inside the elastic member. The pressure sensor includes a pressure sensitive film. An inner side of the elastic member is filled with fluid material which acts on the pressure sensitive film. The operation plate is driven by the external force to be slant which extrudes the elastic member to deform so as to change fluid pressure of the fluid material limited in the elastic member, and such change of the fluid pressure can be sensed by the pressure sensitive film of the pressure sensor so as to identify the movement and the intensity of the external force.
摘要翻译：用于识别外力的反馈系统包括操作板和压力感测单元。压力感测单元包括支撑操作板的弹性构件和弹性构件内的压力传感器。压力传感器包括压敏膜。弹性构件的内侧填充作用在压敏膜上的流体材料。操作板由外力驱动而倾斜，挤压弹性构件变形，以改变在弹性构件中限制的流体材料的流体压力，并且可以通过压敏膜感测到流体压力的这种变化以识别外力的运动和强度。

2. 发明申请

US20130202136A1 CHIP WITH INTEGRATED CIRCUIT AND MICRO-SILICON CONDENSER MICROPHONE INTEGRATED ON SINGLE SUBSTRATE AND METHOD FOR MAKING THE SAME 有权
标题翻译：具有集成电路的芯片和集成在单个基板上的微硅凝胶麦克风及其制造方法
公开(公告)号：US20130202136A1
公开(公告)日：2013-08-08
申请号：US13561194
申请日：2012-07-30
申请人： Wei Hu , Gang Li , Jia-Xin Mei
发明人： Wei Hu , Gang Li , Jia-Xin Mei
IPC分类号： H04R1/00 , H01L21/02
CPC分类号： B81C1/00158 , B81C1/00246 , H04R19/005 , H04R31/00
摘要： A method for integrating an IC and a MEMS component includes the following steps: S1) providing a SOI base (20) having a first area (21) and a second area (22); S2) fabricating an IC on the first area through a standard semiconductor process, and simultaneously forming a metal conductive layer (26) and a medium insulation layer (25c) extending to the second area; S3) partly removing the medium insulation layer and then further partly removing the silicon component layer so as to form a backplate diagram; S4) depositing a sacrificial layer (32) above the SOI base; S5) forming a Poly Sil-xGex film (33) on the sacrificial layer; S6) forming a back cavity (34); and S7) eroding the sacrificial layer to form a chamber (36) in communication with the back cavity. Besides, a chip (10) fabricated by the above method is also disclosed.
摘要翻译：一种用于集成IC和MEMS部件的方法包括以下步骤：S1）提供具有第一区域（21）和第二区域（22）的SOI基底（20）; S2）通过标准半导体工艺在第一区域上制造IC，同时形成延伸到第二区域的金属导电层（26）和介质绝缘层（25c）; S3）部分地去除介质绝缘层，然后进一步部分去除硅组分层以形成背板图; S4）在SOI基底上方沉积牺牲层（32）; S5）在牺牲层上形成Poly Sil-xGex膜（33）; S6）形成后腔（34）; 和S7）侵蚀牺牲层以形成与后腔连通的腔室（36）。此外，还公开了通过上述方法制造的芯片（10）。

3. 发明申请

US20130192365A1 MONOLITHIC TRIAXIAL GYRO WITH IMPROVED MAIN MASSES AND COUPLING MASS COUPLED WITH THE EACH OTHER 审中-公开
标题翻译：具有改进的主要质量和联结质量的单晶三棱镜与每个其他
公开(公告)号：US20130192365A1
公开(公告)日：2013-08-01
申请号：US13561278
申请日：2012-07-30
申请人： Rui-Fen Zhuang , Gang Li
发明人： Rui-Fen Zhuang , Gang Li
IPC分类号： G01C19/56
CPC分类号： G01C19/5733
摘要： A monolithic triaxial gyro includes a mass block, a number of electrode groups and a drive comb group. The mass block includes main masses and a coupling mass coupled with the main masses. The main masses are positioned on opposite sides of the coupling mass and are symmetrical with each other along a Y-axis. The electrode groups include a first electrode group within an orthographic projection of the mass block, a second electrode group within an orthographic projection of the coupling mass and a third electrode group including a group of immovable slender flat plates and a group of movable slender flat plates. The drive comb group is connected to the main masses for driving movement of the main masses when signals are inputted into the drive comb group.
摘要翻译：单片三轴陀螺仪包括质量块，多个电极组和驱动梳组。质量块包括主质量和与主质量相结合的耦合质量。主要质量位于耦合块的相对侧，并且沿着Y轴彼此对称。电极组包括质量块的正投影内的第一电极组，耦合块的正投影内的第二电极组和包括一组不可移动的细长平板和一组可移动细长平板的第三电极组。驱动梳组连接到主体，用于在将信号输入到驱动梳组中时驱动主体的移动。

4. 发明授权

US07998776B1 Methods for manufacturing MEMS sensor and thin film thereof with improved etching process 有权
标题翻译：用于制造具有改进的蚀刻工艺的MEMS传感器及其薄膜的方法
公开(公告)号：US07998776B1
公开(公告)日：2011-08-16
申请号：US12910801
申请日：2010-10-23
申请人： Gang Li , Wei Hu
发明人： Gang Li , Wei Hu
IPC分类号： H01L21/00
CPC分类号： G01L9/0042 , B81B2201/0235 , B81B2201/0264 , B81B2203/0118 , B81B2203/0127 , B81B2203/0315 , B81B2203/0376 , B81C1/00182 , B81C2201/0132 , B81C2201/0177 , G01L9/0045 , G01P15/123 , G01P2015/0828
摘要： A method for manufacturing a MEMS sensor and a thin film thereof includes steps of etching a top surface of a single-crystal silicon wafer in combination of a deposition process, an isotropic DRIE process, a wet etching process and a back etching process in order to form a pressure-sensitive single-crystal silicon film, a cantilever beam, a mass block, a front chamber, a back chamber and trenches connecting the front and the back chambers. The single-crystal silicon film is prevented from etching so that the thickness thereof can be well controlled. The method of the present invention can be used to replace the traditional method which forms the back chamber and the pressure-sensitive single-crystal silicon film from the bottom surface of the silicon wafer.
摘要翻译： MEMS传感器及其薄膜的制造方法包括以下步骤：结合沉积工艺，各向同性DRIE工艺，湿蚀刻工艺和背蚀刻工艺来蚀刻单晶硅晶片的顶表面，以便形成压敏单晶硅膜，悬臂梁，质量块，前室，后室和连接前室和后室的沟槽。防止单晶硅膜蚀刻，从而可以良好地控制其厚度。本发明的方法可以用于代替从硅晶片的底表面形成后室和压敏单晶硅膜的传统方法。

5. 发明申请

US20120042735A1 Feedback System for Identifying Movement and Intensity of External Force 有权
标题翻译：识别外力的运动和强度的反馈系统
公开(公告)号：US20120042735A1
公开(公告)日：2012-02-23
申请号：US12910797
申请日：2010-10-23
申请人： Jia-Xin Mei , Gang Li , Hong-Yuan Yang
发明人： Jia-Xin Mei , Gang Li , Hong-Yuan Yang
IPC分类号： G01L1/04
CPC分类号： G06F3/0414 , G06F3/0338 , G06F3/041 , H01L2224/48091 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A feedback system for identifying an external force, includes an operation plate and a pressure-sensing unit. The pressure-sensing unit includes an elastic member supporting the operation plate and a pressure sensor inside the elastic member. The pressure sensor includes a pressure sensitive film. An inner side of the elastic member is filled with fluid material which acts on the pressure sensitive film. The operation plate is driven by the external force to be slant which extrudes the elastic member to deform so as to change fluid pressure of the fluid material limited in the elastic member, and such change of the fluid pressure can be sensed by the pressure sensitive film of the pressure sensor so as to identify the movement and the intensity of the external force.
摘要翻译：用于识别外力的反馈系统包括操作板和压力感测单元。压力感测单元包括支撑操作板的弹性构件和弹性构件内的压力传感器。压力传感器包括压敏膜。弹性构件的内侧填充作用在压敏膜上的流体材料。操作板被外力驱动以倾斜，挤压弹性构件变形，以便改变弹性构件限制的流体材料的流体压力，并且可以通过压敏膜感测到流体压力的这种变化以识别外力的运动和强度。

6. 发明授权

US07972888B1 Methods for manufacturing MEMS sensor and thin film and cantilever beam thereof with epitaxial growth process 有权
标题翻译：利用外延生长工艺制造MEMS传感器和薄膜及其悬臂梁的方法
公开(公告)号：US07972888B1
公开(公告)日：2011-07-05
申请号：US12813503
申请日：2010-06-10
申请人： Gang Li , Wei Hu
发明人： Gang Li , Wei Hu
IPC分类号： H01L21/00
CPC分类号： G01L9/0042 , B81B2201/0235 , B81B2201/0264 , B81B2203/0118 , B81B2203/0315 , B81B2203/0376 , B81C1/00182 , B81C2201/0132 , B81C2201/0177 , B81C2203/0118 , G01P15/0802 , G01P15/123 , G01P2015/0828
摘要： A method for manufacturing a MEMS sensor and its thin film and cantilever beam includes steps of etching a top surface of a single-crystal silicon wafer in combination of a deposition process, an outer epitaxial growth process, a wet etching process and a back etching process in order to form a pressure-sensitive single-crystal silicon film, a cantilever beam, a mass block, a front chamber, a back chamber and trenches connecting the front and the back chambers. The single-crystal silicon film is prevented from etching so that the thickness thereof can be well controlled. The method of the present invention can be used to replace the traditional method which forms the back chamber and the pressure-sensitive single-crystal silicon film from the bottom surface of the silicon wafer.
摘要翻译： MEMS传感器及其薄膜和悬臂梁的制造方法包括以下步骤：将沉积工艺，外部外延生长工艺，湿蚀刻工艺和背蚀刻工艺结合在一起蚀刻单晶硅晶片的顶表面以形成压敏单晶硅膜，悬臂梁，质量块，前室，后室和连接前室和后室的沟槽。防止单晶硅膜蚀刻，从而可以良好地控制其厚度。本发明的方法可以用于代替从硅晶片的底表面形成后室和压敏单晶硅膜的传统方法。

7. 发明授权

US08482357B2 Transverse acoustic wave resonator, oscillator having the resonator and method for making the resonator 有权
标题翻译：横波声波谐振器，具有谐振器的振荡器和用于制造谐振器的方法
公开(公告)号：US08482357B2
公开(公告)日：2013-07-09
申请号：US13310687
申请日：2011-12-02
申请人： Bin Xiao , Ping Lv , Wei Hu , Jia-Xin Mei , Gang Li
发明人： Bin Xiao , Ping Lv , Wei Hu , Jia-Xin Mei , Gang Li
IPC分类号： H03B5/18
CPC分类号： H03H9/2436 , H03H3/0072 , Y10T29/49016
摘要： A transverse acoustic wave resonator includes a base, a resonator component, a number of driving electrodes fixed to the base and a number of fixing portions connecting the base and the resonator component. The resonator component is suspended above a top surface of the base and is perpendicular to the base. The driving electrodes are coupling to side surfaces of the resonator component. The resonator component is formed in a shape of an essential regular polygon. The driving electrodes and the resonator component jointly form an electromechanical coupling system for converting capacitance into electrostatic force. Besides, a capacitive-type transverse extension acoustic wave silicon oscillator includes the transverse acoustic wave resonator and a method of fabricating the transverse acoustic wave resonator are also disclosed.
摘要翻译：横波声谐振器包括基座，谐振器部件，固定到基座的多个驱动电极以及连接基座和谐振器部件的多个固定部分。谐振器部件悬挂在基座的顶表面上方并且垂直于基座。驱动电极耦合到谐振器部件的侧表面。谐振器部件形成为基本正多边形的形状。驱动电极和谐振器部件共同形成用于将电容转换成静电力的机电耦合系统。此外，还公开了包括横向声波谐振器的电容式横向延伸声波硅振荡器和制造横向声波谐振器的方法。

8. 发明申请

US20130093527A1 TRANSVERSE ACOUSTIC WAVE RESONATOR, OSCILLATOR HAVING THE RESONATOR AND METHOD FOR MAKING THE RESONATOR 有权
标题翻译：横波声波共振器，具有谐振器的振荡器和制造谐振器的方法
公开(公告)号：US20130093527A1
公开(公告)日：2013-04-18
申请号：US13310687
申请日：2011-12-02
申请人： BIN XIAO , Ping Lv , Wei Hu , Jia-Xin Mei , Gang Li
发明人： BIN XIAO , Ping Lv , Wei Hu , Jia-Xin Mei , Gang Li
IPC分类号： H03B5/30 , H01P11/00 , H01P7/06
CPC分类号： H03H9/2436 , H03H3/0072 , Y10T29/49016
摘要： A transverse acoustic wave resonator includes a base, a resonator component, a number of driving electrodes fixed to the base and a number of fixing portions connecting the base and the resonator component. The resonator component is suspended above a top surface of the base and is perpendicular to the base. The driving electrodes are coupling to side surfaces of the resonator component. The resonator component is formed in a shape of an essential regular polygon. The driving electrodes and the resonator component jointly form an electromechanical coupling system for converting capacitance into electrostatic force. Besides, a capacitive-type transverse extension acoustic wave silicon oscillator includes the transverse acoustic wave resonator and a method of fabricating the transverse acoustic wave resonator are also disclosed.
摘要翻译：横波声谐振器包括基座，谐振器部件，固定到基座的多个驱动电极以及连接基座和谐振器部件的多个固定部分。谐振器部件悬挂在基座的顶表面上方并且垂直于基座。驱动电极耦合到谐振器部件的侧表面。谐振器部件形成为基本正多边形的形状。驱动电极和谐振器部件共同形成用于将电容转换成静电力的机电耦合系统。此外，还公开了包括横向声波谐振器的电容式横向延伸声波硅振荡器和制造横向声波谐振器的方法。

9. 发明授权

US09221675B2 Chip with integrated circuit and micro-silicon condenser microphone integrated on single substrate and method for making the same 有权
标题翻译：芯片集成电路和微硅电容麦克风集成在单个基板上，并制作相同的方法
公开(公告)号：US09221675B2
公开(公告)日：2015-12-29
申请号：US13561194
申请日：2012-07-30
申请人： Wei Hu , Gang Li , Jia-Xin Mei
发明人： Wei Hu , Gang Li , Jia-Xin Mei
IPC分类号： B81C1/00 , H04R31/00 , H04R19/00
CPC分类号： B81C1/00158 , B81C1/00246 , H04R19/005 , H04R31/00
摘要： A method for integrating an IC and a MEMS component includes the following steps: S1) providing a SOI base (20) having a first area (21) and a second area (22); S2) fabricating an IC on the first area through a standard semiconductor process, and simultaneously forming a metal conductive layer (26) and a medium insulation layer (25c) extending to the second area; S3) partly removing the medium insulation layer and then further partly removing the silicon component layer so as to form a backplate diagram; S4) depositing a sacrificial layer (32) above the SOI base; S5) forming a Poly Sil-xGex film (33) on the sacrificial layer; S6) forming a back cavity (34); and S7) eroding the sacrificial layer to form a chamber (36) in communication with the back cavity. Besides, a chip (10) fabricated by the above method is also disclosed.
摘要翻译：一种用于集成IC和MEMS部件的方法包括以下步骤：S1）提供具有第一区域（21）和第二区域（22）的SOI基底（20）; S2）通过标准半导体工艺在第一区域上制造IC，同时形成延伸到第二区域的金属导电层（26）和介质绝缘层（25c）; S3）部分地去除介质绝缘层，然后进一步部分去除硅组分层以形成背板图; S4）在SOI基底上方沉积牺牲层（32）; S5）在牺牲层上形成Poly Sil-xGex膜（33）; S6）形成后腔（34）; 和S7）侵蚀牺牲层以形成与后腔连通的腔室（36）。此外，还公开了通过上述方法制造的芯片（10）。

10. 发明申请

US20130221456A1 Capacitance Type Micro-Silicon Microphone and Method for Making the Same 审中-公开
标题翻译：电容式微硅麦克风及其制作方法
公开(公告)号：US20130221456A1
公开(公告)日：2013-08-29
申请号：US13771023
申请日：2013-02-19
申请人： MEMSENSING MICROSYSTEMS TECHNOLOGY CO.,LTD.
发明人： Gang Li , Wei Hu , Jia-Xin Mei
IPC分类号： B81C1/00 , B81B3/00
CPC分类号： B81C1/00158 , B81B3/0018 , H04R19/005 , H04R31/006
摘要： A capacitance type micro-silicon microphone includes a base, a backplate and a diaphragm positioned above the backplate in a suspended manner. The base includes a top face, a bottom face and a number of sound bores recessing inwardly from the top face. Bottom sides of the sound bores are in communication with each other so as to form an upper cavity. The base defines at least one lower cavity recessing inwardly from the bottom face. The backplate is positioned above the upper cavity in a suspended manner. The lower cavity is in communication with the upper cavity so as to jointly form a back cavity of the capacitance type micro-silicon microphone. Besides, a method for fabricating the capacitance type micro-silicon microphone is also disclosed.
摘要翻译：电容型微硅麦克风包括底座，背板和以悬挂方式定位在背板上方的隔膜。基座包括顶面，底面和从顶面向内凹陷的多个声孔。声孔的底侧彼此连通，以便形成上腔。底座限定了从底面向内凹入的至少一个下腔体。背板以悬挂的方式定位在上腔体上方。下腔与上腔连通，共同形成电容式微硅麦克风的后腔。此外，还公开了一种用于制造电容式微硅麦克风的方法。

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