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    • 3. 发明申请
    • CAPACITOR MODULE
    • 电容器模块
    • WO2008110251A1
    • 2008-09-18
    • PCT/EP2008/001231
    • 2008-02-18
    • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.MEINCKE, SteffenBOGDAN, HolgerGLAPA, NorbertDODT, Thomas
    • MEINCKE, SteffenBOGDAN, HolgerGLAPA, NorbertDODT, Thomas
    • H01G4/38H01G9/08H01G9/26
    • H01G4/38H01G9/08H01G9/26Y02E60/13
    • The present invention relates to a capacitor module having at least two capacitor cells (10, 20; 40) of the same type of cells, which cells being provided at one of their rear and front faces with an over-pressure valve for electrolyte contained within said cells, and which cells are electrically connected to each other and arranged in a substantially horizontal orientation within said capacitor module when in its operating position. By using merely one type of cells, the manufacturing costs can be substantially reduced. In case of a series connection of the capacitor cells (10, 20; 40), simple connection of the capacitor cells at the opposed faces thereof is possible. Therefore, as the cells are arranged in a substantially horizontal orientation, inadvertent leackage of electrolyte out of the over-pressure valves is prevented. By means of different additional features, sufficient cooling of the capacitor module is guaranteed.
    • 本发明涉及一种具有至少两个相同类型电池的电容器电池(10,20; 40)的电容器模块,该电池单元在其后表面和前表面中的一个处设置有电解液的过压阀 所述电池以及哪个电池在其工作位置时彼此电连接并且在所述电容器模块内以基本上水平的方向布置。 通过仅使用一种类型的电池,可以显着降低制造成本。 在电容器单元(10,20; 40)的串联连接的情况下,可以在其相对面处简单地连接电容器单元。 因此,由于电池被布置成基本水平的方向,因此防止电解液从过压阀中的无意中的泄漏。 通过不同的附加功能,可以保证电容器模块的充分冷却。
    • 7. 发明申请
    • CONNECTING METHOD OF ELECTRONIC COMPONENT
    • 电子元件的连接方法
    • WO2008081969A1
    • 2008-07-10
    • PCT/JP2007/075369
    • 2007-12-26
    • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.SAKAI, TadahikoEIFUKU, Hideki
    • SAKAI, TadahikoEIFUKU, Hideki
    • H05K3/36H05K3/32H01L21/60
    • H01R12/62H01R12/592H05K3/323H05K3/361H05K2203/0195H05K2203/0278H05K2203/111Y10T29/49126Y10T29/4913
    • It is to provide an electronic component connecting method capable of performing dehumidification within a short time without giving a thermal influence to an electronic component which has already been mounted on a wiring board. When a first connection terminal group 5 formed on a connection area 3 of a rigid board 1 is connected to a flexible board 2 where a second connection terminal group 6 has been formed by employing a thermosetting resin in an electrically conductive manner, since a connection area 3 which is heated in a step for thermally hardening the thermosetting resin is locally preheated, moisture, and oils and fats contained in the connection area 3 among such moisture, and oils and fats, which have been absorbed in the rigid board 1 are dehumidified. Thereafter, the thermosetting resin interposed between the first connection terminal group 5 and the second connection terminal group 6 is thermally hardened. Since the connection area 3 is locally preheated, the dehumidification can be carried out within a short time without giving a thermal influence to an electronic component 4 which has already been mounted on the rigid board 1.
    • 本发明提供能够在短时间内对已经安装在布线基板上的电子部件产生热影响的短时间内进行除湿的电子部件连接方法。 当形成在刚性基板1的连接区域3上的第一连接端子组5通过以导电方式使用热固性树脂而连接到已经形成第二连接端子组6的柔性板2时,由于连接区域 在热固性树脂热固化的步骤中被加热的3被除湿,并且包含在这些湿气中的连接区域3中的油和脂肪以及已被吸收在刚性板1中的油和脂肪被除湿。 此后,插入在第一连接端子组5和第二连接端子组6之间的热固性树脂被热硬化。 由于连接区域3被局部预热,所以除湿可以在短时间内进行,而不会对已经安装在刚性板1上的电子部件4产生热影响。
    • 8. 发明申请
    • MANUFACTURING METHOD OF SEMICONDUCTOR CHIP
    • 半导体芯片的制造方法
    • WO2008081968A1
    • 2008-07-10
    • PCT/JP2007/075368
    • 2007-12-26
    • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.ARITA, KiyoshiHAJI, Hiroshi
    • ARITA, KiyoshiHAJI, Hiroshi
    • H01L21/78H01L21/308H01L21/304
    • H01L21/78H01L21/304H01L21/67092
    • An object is to provide a manufacturing method of a semiconductor chip, by which while a semiconductor wafer is not broken when the semiconductor wafer is transported before plasma dicing is carried out, a time required for the plasma dicing can be shortened, so that a manufacturing efficiency of the semiconductor chips can be improved. After a resist film 6 has been formed on a ground rear plane 1q of a semiconductor wafer 1, partial portions (6a and 1b) of cutting margin areas (6a, 1b, 1c, 3c) along dicing lines 2 are removed by a blade 13 corresponding to a mechanical cutting means, and thickness "t" of remaining cutting margin areas 1c of the semiconductor wafer 1 along a thickness direction thereof are made thinner, which never causes any problem when the semiconductor wafer 1 is transported. Thereafter, all of the remaining cutting margin areas (1c, 3a) are removed by performing a plasma etching process.
    • 本发明的目的是提供一种半导体芯片的制造方法,通过该半导体芯片的制造方法,在半导体晶片在进行等离子体切割之前被输送时半导体晶片不破裂的情况下,可以缩短等离子体切割所需的时间,从而制造 可以提高半导体芯片的效率。 在半导体晶片1的接地背面1q上形成抗蚀剂膜6之后,沿着切割线2切割边缘区域(6a,1b,1c,3c)的部分部分(6a和1b)被刀片13 对应于机械切割装置,并且半导体晶片1的厚度方向上的剩余切割边缘区域1c的厚度“t”变薄,当半导体晶片1被输送时,这不会产生任何问题。 此后,通过进行等离子体蚀刻处理除去所有剩余的切割边缘区域(1c,3a)。