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    • 1. 发明申请
    • VEHICLE NAVIGATION SYSTEM
    • 车辆导航系统
    • WO9303396A3
    • 1993-03-18
    • PCT/GB9201460
    • 1992-08-06
    • MARCONI GEC LTD
    • TAYLOR KEVIN BRENDAN
    • G01S7/02G01S13/75H01Q15/24G01S13/02
    • G01S13/75G01S7/024H01Q15/24
    • A vehicle navigation system including a millimetre wave radar system. Targets may be manufactured or natural, prominent, scene features. In the former case the target (3) is made selectively reflective to one of two orthogonal polarized signals, the ratio of the two reflections providing a good identification of a genuine target. The range and target size also give an amplitude criterion. In the case of natural or incidental targets the azimuth position of prominent features is determined and stored from each of a number of vehicle positions. The change in azimuth disposition of the features at each vehicle position enables the vehicle position to be determined.
    • 一种包括毫米波雷达系统的车辆导航系统。 目标可能是制造或自然的,突出的,场景特征。 在前一种情况下,目标(3)被选择性地反射到两个正交偏振信号中的一个,两个反射的比率提供了真实目标的良好识别。 范围和目标尺寸也给出幅度标准。 在自然或附带目标的情况下,突出特征的方位角位置由多个车辆位置中的每一个确定并存储。 每个车辆位置处的特征的方位布置的改变使得能够确定车辆位置。
    • 10. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPH05190875A
    • 1993-07-30
    • JP17940092
    • 1992-06-12
    • MARCONI GEC LTD
    • RICHIYAADO TORABUAAZU SAIMUMAIKERU JIYOSEFU KERIINAIJIERU RODARITSUKU KOOCHI
    • H01L29/861G01R21/10
    • PURPOSE: To provide a device effective as a radio frequency detector by laminating a 1st ohm contact layer, a 1st non-dope layer formed by a 1st semiconductor material, a thin film non-dope layer formed by a 2nd semiconductor material, a 2nd non-dope layer of which thickness is twenty times the thickness of the thin film non-dope layer, and a 2nd ohm layer. CONSTITUTION: A substrate 1 is doped by an n-type material or formed by a half insulating material and coupled with the material of the 1st ohm layer 2 evaporated on its surface like a grating. The layer 2 is formed by using the 1st semiconductor material and doped to an n -type so as to become an ohm contact by junction with the 1st non-dope layer 3 formed on the layer 2. The layer 3 is formed by the 1st semiconductor material. Then the thin film non-dope layer 4 is formed on the layer 3 by using the 2nd semiconductor material having a band gap larger than the 1st semiconductor material. The 2nd non-dope layer 5 is formed by the 1st semiconductor material and the ratio of the thickness of the layer 5 to that of the layer 4 is set up to 20:1.