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1. 发明专利

TW200745389A 單結晶之製造方法审中-公开
简体标题：单结晶之制造方法
公开(公告)号：TW200745389A
公开(公告)日：2007-12-16
申请号：TW095137096
申请日：2006-10-05
申请人：小松電子金屬股份有限公司 KOMATSU DENSHI KINZOKU KABUSHIKI KAISHA
发明人：下村庫一 SHIMOMURA, KOICHI , 豊竹貴光 , 鈴木禎之 SUZUKI, YOSHIYUKI , 鴨川誠 KAMOGAWA, MAKOTO
IPC分类号： C30B
摘要：【課題】本發明係以不須進行氮或硼摻雜材料之追加,且可以得到有轉位化的傾向變低之添加氮及硼的矽單結晶。【解決手段】本發明係在培育添加氮及硼之矽單結晶的CZ法(Czochralski,直拉法)中之熔融步驟的前步驟中,於被熔融的原料所投入的坩堝內,使摻氮材料及摻硼材料互相不接觸的狀態下,以使氮或硼之任一者先行熔融於融液中的方式,配置該摻硼材料及該摻氮材料。
简体摘要：【课题】本发明系以不须进行氮或硼掺杂材料之追加,且可以得到有转位化的倾向变低之添加氮及硼的硅单结晶。【解决手段】本发明系在培育添加氮及硼之硅单结晶的CZ法(Czochralski,直拉法)中之熔融步骤的前步骤中,于被熔融的原料所投入的坩埚内,使掺氮材料及掺硼材料互相不接触的状态下,以使氮或硼之任一者先行熔融于融液中的方式,配置该掺硼材料及该掺氮材料。

2. 发明专利

TW200707551A 半導體晶圓之製造方法及製造裝置审中-公开
简体标题：半导体晶圆之制造方法及制造设备
公开(公告)号：TW200707551A
公开(公告)日：2007-02-16
申请号：TW095124462
申请日：2006-07-05
申请人：小松電子金屬股份有限公司 KOMATSU DENSHI KINZOKU KABUSHIKI KAISHA
发明人：那須悠一 NASU, YUICHI , 加藤裕孝 KATOU, HIROTAKA , 楢原和宏 NARAHARA KAZUHIRO , 松永秀幸 MATSUNAGA, HIDEYUKI
IPC分类号： H01L
CPC分类号： H01L21/67115 , C23C16/24 , C23C16/52 , C30B25/105 , C30B29/06 , C30B35/005 , H01L21/67288 , H01L21/68742
摘要：本發明是關於一種半導體晶圓之製造方法及其製造裝製的發明,藉由本發明,當對半導體晶圓基板進行熱處理時,使其在移載製程的階段不產生翹曲,使半導體晶圓的品質乃至於由此所製造出來的半導體元件的品質為高品質。在本發明中,晶圓正面溫度和晶圓背面溫度的溫度差到達最大値的時序、在晶圓上產生翹曲的時序為,和提升銷或承座接觸之前(到達紅外線溫度區域的上限値600℃的時點之後的期間),執行移載裝置的移載處理,使提升銷和晶圓背面接觸。
简体摘要：本发明是关于一种半导体晶圆之制造方法及其制造装制的发明,借由本发明,当对半导体晶圆基板进行热处理时,使其在移载制程的阶段不产生翘曲,使半导体晶圆的品质乃至于由此所制造出来的半导体组件的品质为高品质。在本发明中,晶圆正面温度和晶圆背面温度的温度差到达最大値的时序、在晶圆上产生翘曲的时序为,和提升销或承座接触之前(到达红外线温度区域的上限値600℃的时点之后的期间),运行移载设备的移载处理,使提升销和晶圆背面接触。

3. 发明公开

EP2251462A3 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot 有权
标题翻译：装置和用于制造单晶半导体单晶锭的方法和
公开(公告)号：EP2251462A3
公开(公告)日：2011-10-12
申请号：EP10009188.3
申请日：2002-09-27
申请人： Komatsu Denshi Kinzoku Kabushiki Kaisha
发明人： Shiraishi, Yutaka , Tomioka, Jyunsuke , Okumura, Takuji , Hanamot, Tadayuki , Komatsu, Takehiro , Morimoto, Shigeo
IPC分类号： C30B15/20 , C30B29/06 , C30B15/14
CPC分类号： C30B29/06 , C30B15/14 , C30B15/20 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled.

4. 发明公开

EP1498516A1 SINGLE CRYSTAL SILICON PRODUCING METHOD, SINGLE CRYSTAL SILICON WAFER PRODUCING METHOD, SEED CRYSTAL FOR PRODUCING SINGLE CRYSTAL SILICON, SINGLE CRYSTAL SILICON INGOT, AND SINGLE CRYSTAL SILICON WAFER 有权
标题翻译：用于生产硅单晶的硅晶片，从而产生并硅单
公开(公告)号：EP1498516A1
公开(公告)日：2005-01-19
申请号：EP03717609.6
申请日：2003-04-17
申请人： Komatsu Denshi Kinzoku Kabushiki Kaisha , Iida, Tetsuhiro , Shiraishi, Yutaka , Suewaka, Ryota , Tomioka, Junsuke
发明人： Iida, Tetsuhiro, KOMATSU DENSHI KINZOKU K. K. , Shiraishi, Yutaka, KOMATSU DENSHI KINZOKU K. K. , Suewaka, Ryota, KOMATSU DENSHI KINZOKU K. K. , Tomioka, Junsuke, KOMATSU DENSHI KINZOKU K. K.
IPC分类号： C30B29/06
CPC分类号： C30B29/06 , C30B15/36 , Y10S117/902
摘要： A method for eliminating slip dislocations in producing single crystal silicon, a seed crystal capable of eliminating the slip dislocations, a single crystal silicon ingot from which the slip dislocations have been eliminated and a single crystal silicon wafer, are disclosed. Single crystal silicon is produced by dipping a seed crystal in a melt and pulling the seed crystal up along the axis of the seed crystal, using a single crystal (1) in which the crystal orientation (10) is inclined at a predetermined angle θ with respect to the axial direction (9) so that the edge direction (8) of the {111} crystal plane is inclined with respect to the axial direction (9). When single crystal silicon is grown while pulling up a seed crystal by the CZ method, a single crystal silicon ingot of a large diameter and a heavy weight can be pulled up by eliminating slip dislocations from the thick crystal.
摘要翻译：一种用于在单结晶硅制造，晶种能够消除滑移位错，从该单晶硅锭的滑移位错被消除和单晶硅晶片的消除滑移位错的方法，是游离缺失盘。单晶硅是通过在熔融浸渍晶种，并沿着晶种的轴向上提拉籽晶，使用单一的结晶（1），其中<110>晶向（10）以预定的倾斜产生角＆θ驱动; 相对于所述轴向方向（9）做了ä111ü晶面的边缘的方向（8）倾斜相对于所述轴向方向（9）。当单晶硅而通过CZ方法提拉籽晶生长，一个大直径的单晶硅锭和重的重量可以通过从粗晶体消除滑移位错被拉高。

5. 发明公开

EP1215309A1 SILICON WAFER AND METHOD FOR MANUFACTURE THEREOF, AND METHOD FOR EVALUATION OF SILICON WAFER 有权
标题翻译： SILIZIUMSCHEIBE，HERSTELLUNGSVERFAHREN UND BEWERTUNGSVERFAHRENDAFÜR
公开(公告)号：EP1215309A1
公开(公告)日：2002-06-19
申请号：EP00955019.5
申请日：2000-08-25
申请人： Komatsu Denshi Kinzoku Kabushiki Kaisha
发明人： KOMIYA, Satoshi, Komatsu Denshi Kinzoku K. K. , YOSHINO, Shiro, Komatsu Denshi Kinzoku K. K. , DANBATA, Masayoshi, Komatsu Denshi Kinzoku K. K. , HAYASHIDA, Kouichirou, Komatsu Denshi Kinzoku K.K.
IPC分类号： C30B29/06 , C30B15/04
CPC分类号： C30B15/00 , C30B29/06
摘要： A method for producing a silicon ingot through pulling up a silicon single crystal according to the Czochralski method, wherein the silicon single crystal is pulled up while being doped with nitrogen in such a condition as to form a part having a nitrogen content of 5 X 10 13 atoms/cm 3 to 1 X 10 15 atoms/cm 3 . A silicon wafer having a nitrogen content of 5 X 10 13 atoms/cm 3 to 1 X 10 15 atoms/cm 3 which is suitable for being treated with heat in a non-oxidizing atmosphere is manufactured of an ingot produced by using the method. The method can be used for producing a silicon wafer being doped with nitrogen and having satisfactory characteristics for use in a semiconductor device.
摘要翻译：一种通过根据切克劳斯基法提取硅单晶来生产硅锭的方法，其中在形成氮含量为5×10 5的部分的条件下，同时掺杂氮气的同时将单晶硅拉起 13原子/ cm 3至1×10 15个原子/ cm 3。适用于在非氧化性气氛中加热处理的氮含量为5×10 13原子/ cm 3至1×10 15原子/ cm 3的硅晶片由通过使用该方法生产的锭。该方法可用于制造掺杂有氮的硅晶片，并具有用于半导体器件的令人满意的特性。

6. 发明授权

EP1460683B1 METHOD FOR ELIMINATING DEFECTS FROM SINGLE CRYSTAL SILICON 有权
标题翻译：除去方法单晶硅缺陷
公开(公告)号：EP1460683B1
公开(公告)日：2013-05-01
申请号：EP02790852.4
申请日：2002-12-25
申请人： Komatsu Denshi Kinzoku Kabushiki Kaisha
发明人： ANDO, Masahiko, KOMATSU DENSHI KINZOKU K.K. , YUYAMA, Masaru, KOMATSU DENSHI KINZOKU K.K. , YOSHINO, Shiro, KOMATSU DENSHI KINZOKU K.K.
IPC分类号： H01L21/324 , H01L21/322
CPC分类号： H01L21/324 , H01L21/3225

7. 发明授权

EP1182280B1 DEVICE AND METHOD FOR PRODUCING SINGLE-CRYSTAL INGOT 有权
标题翻译：方法和装置用于制造单晶锭
公开(公告)号：EP1182280B1
公开(公告)日：2013-02-13
申请号：EP00912905.7
申请日：2000-03-29
申请人： Komatsu Denshi Kinzoku Kabushiki Kaisha
发明人： MORIMOTO, Shigeo , MONDEN, Hiroshi , EBI, Daisuke, c/o Komatsu Denshi Kinzoku K. K. , KOTOOKA, Toshirou, c/o Komatsu Denshi Kinzoku K.K.
IPC分类号： C30B15/14
CPC分类号： C30B15/14 , Y10T117/1008 , Y10T117/1032

8. 发明授权

EP1498516B1 SINGLE CRYSTAL SILICON PRODUCING METHOD, SINGLE CRYSTAL SILICON WAFER AND INGOT PRODUCED THEREBY 有权
标题翻译：单晶硅生产方法，单晶硅晶片及其制造的锭子
公开(公告)号：EP1498516B1
公开(公告)日：2011-01-05
申请号：EP03717609.6
申请日：2003-04-17
申请人： Komatsu Denshi Kinzoku Kabushiki Kaisha
发明人： Iida, Tetsuhiro, KOMATSU DENSHI KINZOKU K. K. , Shiraishi, Yutaka, KOMATSU DENSHI KINZOKU K. K. , Suewaka, Ryota, KOMATSU DENSHI KINZOKU K. K. , Tomioka, Junsuke, KOMATSU DENSHI KINZOKU K. K.
IPC分类号： C30B29/06
CPC分类号： C30B29/06 , C30B15/36 , Y10S117/902
摘要： A method for eliminating slip dislocation when a single crystal silicon is produced, a seed crystal for eliminating slip dislocation, a single crystal silicon ingot from which slip dislocation is eliminated, and a single crystal silicon wafer are disclosed. A single crystal silicon is produced by dipping a seed crystal in a melt and pulling the seed crystal up along the axis of the seed crystal, using a single crystal (1) such that the crystal orientation (10) is inclined at a predetermined angle θ with respect to the axial direction (9) in such a way that the direction of the edge (8) of the {111} crystal face is inclined with respect to the axial direction (9). When a single crystal silicon is grown while pulling up a seed crystal by the CZ method, a single crystal silicon ingot of a large diameter and a heavy weight can be pulled up by eliminating slip dislocation from the thick crystal.
摘要翻译：公开了一种在制造单晶硅时消除滑移位错的方法，用于消除滑移位错的籽晶，消除滑移位错的单晶硅锭和单晶硅晶片。通过将晶种浸入熔体中并使用单晶（1）沿种晶轴向上拉晶种以产生单晶硅，使得<110>晶向（10）在以{111}晶面的边缘（8）的方向相对于轴向（9）倾斜的方式相对于轴向（9）形成预定角度θ。当通过CZ法提拉晶种时生长单晶硅时，通过消除厚晶体中的滑移位错可以拉起大直径和大重量的单晶硅锭。

9. 发明公开

EP1158076A1 PRODUCTION METHOD FOR SILICON SINGLE CRYSTAL AND PRODUCTION DEVICE FOR SINGLE CRYSTAL INGOT, AND HEAT TREATING METHOD FOR SILICON SINGLE CRYSTAL WAFER 无效
标题翻译：对于用于制造SILIZIUMEINKRISTALLSTANGE及处理方法的晶体硅晶片的硅和器件制造方法
公开(公告)号：EP1158076A1
公开(公告)日：2001-11-28
申请号：EP99972700.1
申请日：1999-11-19
申请人： Komatsu Denshi Kinzoku Kabushiki Kaisha
发明人： NAKAMURA, Kozo, Komatsu Denshi Kinzoku K.K. , SAISHOJI, Toshiaki, Komatsu Denshi Kinzoku K.K. , NAKAJIMA, Hirotaka, Komatsu Denshi Kinzoku K.K. , SADOHARA, Shinya, Komatsu Denshi Kinzoku K.K. , NISHIMURA, Masashi, Komatsu Denshi Kinzoku K.K. , KOTOOKA, Toshirou, Komatsu Denshi Kinzoku K.K. , SHIMANUKI, Yoshiyuki, Komatsu Denshi Kinzoku K.K.
IPC分类号： C30B29/06 , C30B15/00 , C30B33/02
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206
摘要： A method for growing a silicon crystal by a Czochralsky method, wherein, let a pulling speed be V (mm/min) and an average value of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350 °C, be G (°C/mm), V/G ranges from 0.16 to 0.18 mm 2 /°C min between a crystal center position and a crystal outer periphery position, and a ratio G outer/G center of an average value G of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350 °C, at a crystal outer surface to that at a crystal center is set to up to 1.10 to thereby obtain a high-quality perfect crystal silicon wafer. Such a perfect crystal silicon wafer, wherein an oxygen concentration is controlled to up to 13 x 10 17 atoms/cm 3 , an initial heat treatment temperature is at least up to 500 °C and a temperature is raised at up to 1 °C/min at least within 700 to 900 °C, thereby making uniform a wafer radial distribution to an arbitrary oxygen precipitation density level.
摘要翻译：一种用于由切克拉斯基法生长的硅晶体的方法，worin，让的拉伸速度为V（毫米/分钟）和在提拉轴方向的温度范围内的在晶体温度梯度的平均值，硅熔点到1350℃，是G（℃/ mm）时，V / G的范围从12点16分至0时18毫米的晶体中心位置与结晶外周部的位置，和一个比G外/ G中心之间<2> /℃，分在一个温度范围内的提拉轴方向的在晶体温度梯度的平均值G值的，一个硅熔点至1350℃，在晶体外表面，以没有在晶体中心被设置为高达1.10，由此得到高品质的完美的晶体硅晶片。这样完美的晶体硅晶片，氧浓度的worin被控制为高达13×10 <17>原子/厘米<3>在初始热处理温度至少达500℃，温度在高达升高 1℃/分钟至少700〜900℃的范围内，从而使得均匀的在任意氧沉淀密度水平的晶片径向分布。

10. 发明公开

EP2251462A2 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot 有权
标题翻译： Vorrichtung und Verfahren zur Herstellung eines Einkristallhalbleiters
公开(公告)号：EP2251462A2
公开(公告)日：2010-11-17
申请号：EP10009188.3
申请日：2002-09-27
申请人： Komatsu Denshi Kinzoku Kabushiki Kaisha
发明人： Shiraishi, Yutaka , Tomioka, Jyunsuke , Okumura, Takuji , Hanamot, Tadayuki , Komatsu, Takehiro , Morimoto, Shigeo
IPC分类号： C30B15/20 , C30B29/06
CPC分类号： C30B29/06 , C30B15/14 , C30B15/20 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled.
摘要翻译：单晶半导体制造装置，其中通过CZ法提取单晶硅等单晶硅，单晶半导体制造方法以及单晶硅制造的单晶硅，单晶体半导体中的氧浓度被控制，公开了该方法。通过调节熔体（5）的多个部分的温度来控制石英坩埚（3）中的熔体（5）中的自然对流（20）。通过调节由上侧的加热装置（9a）产生的热量，单晶半导体（6）可以具有期望的直径。此外，调节由上侧加热装置（9a）产生的热量与下侧加热装置（9b）产生的热量之间的比率以改变处理条件。在调整中，由下侧加热装置（9b）产生的热量控制在相当大的比例。在不引起制造装置的高成本和大尺寸的情况下，控制单晶半导体的轴向的氧浓度分布，单晶半导体的直径以及轴向的氧浓度的微小波动。

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