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    • 4. 发明申请
    • Ultrasound diagnosis apparatus that adjusts a time phase between a plurality of image series
    • 超声诊断装置,其调整多个图像序列之间的时间相位
    • US20040044283A1
    • 2004-03-04
    • US10463614
    • 2003-06-18
    • KABUSHIKI KAISHA TOSHIBA, Tokyo, Japan
    • Naoki Yoneyama
    • A61B008/00
    • A61B8/14A61B8/463A61B8/488A61B8/543G01S7/52085G01S7/52087
    • An ultrasound diagnosis apparatus comprises an insonifier, a receiver, and a processor. The insonifier is configured to insonify an ultrasound to a specimen. The receiver is configured to receive an echo signal from the specimen resulting from the ultrasound. The processor is in communication with the receiver. Further, the processor is configured to process the echo signal so as to obtain a first series of images under a first condition and a second series of images under a second condition. The processor is also configured to measure a first physical value on the first series of images and a second physical value on the second series of images. The processor is further configured to adjust a time phase of the second series of images relative to a time phase of the first series of images based on the first physical value and the second physical value.
    • 一种超声波诊断装置,包括一个外因子,一个接收器和一个处理器。 所述外推子配置成使超声波对样本进行超声。 接收器被配置为从超声波接收来自样本的样本的回波信号。 处理器与接收器通信。 此外,处理器被配置为处理回波信号,以便在第一条件下获得第一系列图像,在第二条件下获得第二系列图像。 处理器还被配置为测量第一系列图像上的第一物理值和第二系列图像上的第二物理值。 处理器还被配置为基于第一物理值和第二物理值来调整第二系列图像相对于第一系列图像的时间相位的时间相位。
    • 6. 发明申请
    • Non-volatile semiconductor memory device and electric device with the same
    • 非易失性半导体存储器件和电器件相同
    • US20040208061A1
    • 2004-10-21
    • US10461398
    • 2003-06-16
    • KABUSHIKI KAISHA TOSHIBA, TOKYO, JAPAN
    • Haruki Toda
    • G11C016/06
    • G11C7/065G11C11/5628G11C11/5642G11C16/0483G11C16/26G11C16/28G11C16/3459G11C2211/5621
    • A non-volatile semiconductor memory device includes: a memory cell array in which a plurality of electrically rewritable and non-volatile memory cells are arranged; a sense amplifier circuit configured to write M-value data (where, M is an integer equal to 4 or more) to pair-cells each constituted by simultaneously selected first and second memory cells connected to a pair of bit lines in the memory cell array, the M-value data being defined as a combination of different threshold levels of the first and second memory cells in M threshold levels to be set at each memory cell, and read M-value data stored in each pair-cell by sensing a difference between cell currents of the first and second memory cells: and a controller configured to control data write and read operations for the memory cell array.
    • 非挥发性半导体存储器件包括:存储单元阵列,其中布置有多个电可重写和非易失性存储单元; 一个读出放大器电路,被配置为将M值数据(其中,M是等于4或更大的整数)写入到由存储单元阵列中的一对位线连接的同时选择的第一和第二存储器单元构成的配对单元 M值数据被定义为要在每个存储单元设置的M个阈值电平中的第一和第二存储器单元的不同阈值电平的组合,并且通过感测差分来读取存储在每对单元中的M值数据 在第一和第二存储器单元的单元电流之间;以及被配置为控制存储单元阵列的数据写入和读取操作的控制器。