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    • 1. 发明申请
    • HOLOGRAM FORMING APPARATUS AND METHOD
    • HOLOGRAM形成装置和方法
    • WO02063399A9
    • 2003-01-23
    • PCT/JP0201092
    • 2002-02-08
    • ARTNOW LTDHAMAMATSU PHOTONICS KKTAKEMORI TAMIKIKON KENJI
    • TAKEMORI TAMIKIKON KENJI
    • G03H1/04G03H1/08G03H1/12G03H1/14G03H1/26
    • G03H1/268G03H2001/2695G03H2222/33
    • A pulsed laser beam is repeatedly output from a pulse current driven light source (10), and the laser beam output from this light source (10) is two-branched by a half mirror (20). The laser beam reflected by the half mirror (20) is spatially modulated by a spatial light modulation device (36), and this modulated laser beam is entered into a local region on a photosensitive material (2) as an object light. The laser beam having penetrated through the half mirror (20) is entered into a local region on the photosensitive material (2) as reference light. While a laser beam is not output from the light source (10), the photosensitive material (2) is relatively moved in parallel with the face of the photosensitive material (2) so that the object light and the reference light may enter a next local region on the photosensitive material (2) where a hologram is to be formed.
    • 从脉冲电流驱动光源(10)反复输出脉冲激光束,从该光源(10)输出的激光束由半反射镜(20)双分支。 由半反射镜(20)反射的激光束由空间光调制装置(36)进行空间调制,并将该调制的激光束作为对象光进入感光材料(2)的局部区域。 穿过半反射镜(20)的激光束作为参考光进入感光材料(2)上的局部区域。 当激光束不从光源(10)输出时,感光材料(2)与感光材料(2)的表面平行地相对移动,使得物体光和参考光可以进入下一个本地 在要形成全息图的感光材料(2)上的区域。
    • 3. 发明申请
    • PHOTOMULTIPLIER
    • 光电倍增
    • WO2006112144A2
    • 2006-10-26
    • PCT/JP2006303339
    • 2006-02-17
    • HAMAMATSU PHOTONICS KKFUJITA TOSHIKAZU
    • FUJITA TOSHIKAZU
    • H01J43/06
    • H01J43/06
    • The present invention relates to a photomultiplier having a structure for performing a high gain and achieving a higher productivity in a state keeping or improving an excellent high-speed response. In the photomultiplier, an electron-multiplying unit accommodated in a sealed container has a structure that enables an integrated assembly of a focusing electrode, an accelerating electrode, a dynode unit, and an anode. Specifically, the focusing electrode has one or more notched portions to be grasped by a part of each of the insulating support members for grasping directly the dynode unit and so on when the focusing electrode itself is rotated around the tube axis of the sealed container. With this construction, the focusing electrode is fixed to the pair of insulating support members in a state that the focusing electrode is aligned with high accuracy by using the pair of insulating support member as a reference member.
    • 本发明涉及具有用于实现高增益并且在保持状态或提高优异的高速响应方面实现更高生产率的结构的光电倍增管。 在光电倍增器中,容纳在密封容器中的电子倍增单元具有能够集中组装聚焦电极,加速电极,倍增极单元和阳极的结构。 具体地,聚焦电极具有一个或多个凹口部分,以便当聚焦电极本身围绕密封容器的管轴旋转时,通过每个绝缘支撑构件的一部分直接握持倍增极单元等来抓握。 利用这种结构,通过使用一对绝缘支撑构件作为基准构件,聚焦电极以高精度对准的状态固定在一对绝缘支撑构件上。
    • 4. 发明申请
    • SEMICONDUCTOR SUBSTRATE CUTTING METHOD
    • 半导体基板切割方法
    • WO2005027212A8
    • 2005-05-26
    • PCT/JP2004013163
    • 2004-09-09
    • HAMAMATSU PHOTONICS KKFUKUMITSU KENSHIFUKUYO FUMITSUGUUCHIYAMA NAOKISUGIURA RYUJIATSUMI KAZUHIRO
    • FUKUMITSU KENSHIFUKUYO FUMITSUGUUCHIYAMA NAOKISUGIURA RYUJIATSUMI KAZUHIRO
    • H01L21/301B23K26/08B23K26/10B23K26/40B23K26/00
    • B23K26/0884B23K26/0057B23K26/40B23K2201/40B23K2203/50B28D5/0011
    • A semiconductor substrate cutting method for efficiently cutting a semiconductor substrate on which a functional element is formed and a die-bond resin layer. A laser beam (L) is made to fall on the back (17) of a wafer (11) on the front surface (3) of which a functional element (15) is formed. The laser beam (L) is focused at the focal point (P) inside the wafer (11) to cause multiphoton absorption. As a result, a cut start region (8) thanks to a fusion treatment region (13) is formed inside the wafer (11) along a line (5) to be cut. Thus, fracture is caused from the cutting start region (8) naturally or with a relatively weak force. The fracture can be made to reach the back (17) from the front surface (3). Therefore, after the formation of the cutting start region (8), an extension film (21) is bonded to a die-bond resin layer (23) formed on the back (17). When the extension film (21) is extended, the wafer (11) and the die-bond resin layer (23) can be cut along the line (5).
    • 一种用于有效切割形成有功能元件的半导体衬底和芯片接合树脂层的半导体衬底切割方法。 使激光束(L)落在形成有功能元件(15)的前表面(3)上的晶片(11)的背面(17)上。 激光束(L)聚焦在晶片(11)内部的焦点(P)处以产生多光子吸收。 结果,沿着待切割的线(5)在晶片(11)的内部形成有由熔融处理区域(13)构成的切割起始区域(8)。 因此,自然地或以相对较弱的力从切割起始区域(8)引起断裂。 骨折可以从前表面(3)到达后部(17)。 因此,在形成切割开始区域(8)之后,将延伸膜(21)接合到形成在背面(17)上的模片接合树脂层(23)。 当延伸膜(21)延伸时,可以沿着线(5)切割晶片(11)和芯片接合树脂层(23)。
    • 5. 发明申请
    • PHOTOMULTIPLIER
    • 光电倍增
    • WO2006112146A3
    • 2007-10-25
    • PCT/JP2006303342
    • 2006-02-17
    • HAMAMATSU PHOTONICS KKFUJITA TOSHIKAZU
    • FUJITA TOSHIKAZU
    • H01J43/06
    • H01J43/06
    • The present invention relates to a photomultiplier having a structure for performing a high gain and achieving a higher productivity in a state keeping or improving an excellent high-speed response. In the photomultiplier, an electron-multiplying unit accommodated in a sealed container has a structure that enables an integrated assembly of a focusing electrode, an accelerating electrode, a dynode unit, and an anode. Specifically, the accelerating electrode composes a lower electrode and an upper electrode fixed each other by welding at a plurality of spots. The lower electrode is held at a pair of insulating support members in a state for the pair of insulating support members to grasp unitedly it together with the dynode unit and anode. Additionally, the upper electrode has one or more slit grooves for pinching a part of the pair of insulating support members. With this construction, the accelerating electrode constituted by the lower electrode and upper electrode is fixed at the pair of insulating support members in a state to be allocated with high accuracy by using the pair of insulating support members as a reference member.
    • 本发明涉及具有用于实现高增益并且在保持状态或提高优异的高速响应方面实现更高生产率的结构的光电倍增管。 在光电倍增器中,容纳在密封容器中的电子倍增单元具有能够集中组装聚焦电极,加速电极,倍增极单元和阳极的结构。 具体地,加速电极通过在多个点处焊接而形成彼此固定的下电极和上电极。 下电极被保持在一对绝缘支撑构件上,处于一对绝缘支撑构件的状态,以与倍增极单元和阳极一体地将其并入。 此外,上电极具有用于夹持该对绝缘支撑构件的一部分的一个或多个狭缝槽。 利用这种结构,通过使用一对绝缘支撑构件作为基准构件,由下电极和上电极构成的加速电极以一定的绝缘支撑构件固定在高精度的状态。
    • 7. 发明申请
    • PHOTOMULTIPLIER
    • 光电倍增
    • WO2006112145A3
    • 2007-10-25
    • PCT/JP2006303341
    • 2006-02-17
    • HAMAMATSU PHOTONICS KKFUJITA TOSHIKAZU
    • FUJITA TOSHIKAZU
    • H01J43/06
    • H01J43/06
    • The present invention relates to a photomultiplier having a structure for performing a high gain and achieving a higher productivity in a state keeping or improving an excellent high-speed response. In the photomultiplier, an electron-multiplying unit, placed in a sealed container, has a structure that enables an integrated assembly of a focusing electrode, an accelerating electrode, a dynode unit, and an anode. Specifically, by providing a structure for fixing directly the focusing electrode and accelerating electrode at a part of a pair of insulating support members for grasping directly the dynode unit and so on, together with the dynode unit and anode, each of the focusing electrode and accelerating electrode is aligned by using the pair of insulating support members as a reference. As a result, on assembly of the electron-multiplying unit, alignment work with high precision between the members, specific fixing members and fixing jigs becomes unnecessary, which enables to improve drastically the productivity of the electron-multiplying unit placed in the sealed container.
    • 本发明涉及具有用于实现高增益并且在保持状态或提高优异的高速响应方面实现更高生产率的结构的光电倍增管。 在光电倍增器中,放置在密封容器中的电子倍增单元具有能够聚焦电极,加速电极,倍增电极单元和阳极一体化的结构。 具体而言,通过提供直接将聚焦电极和加速电极固定在一对绝缘支撑构件的一部分上,用于直接与倍增极单元等一起直接用于倍增极单元和阳极,每个聚焦电极和加速 通过使用一对绝缘支撑构件作为参考来对准电极。 结果,在组装电子倍增单元时,不需要在构件,特定固定构件和固定夹具之间的高精度对准作业,这能够极大地提高放置在密封容器中的电子倍增单元的生产率。
    • 8. 发明申请
    • ELECTRON MULTIPLIER UNIT AND PHOTOMULTIPLIER INCLUDING THE SAME
    • 电子乘法器单元和包括它的照相机
    • WO2006080104A3
    • 2007-07-05
    • PCT/JP2005014142
    • 2005-07-27
    • HAMAMATSU PHOTONICS KKNAKAMURA KIMITSUGUOOHASHI YOUSUKEOHISHI KEIICHIITO MASUO
    • NAKAMURA KIMITSUGUOOHASHI YOUSUKEOHISHI KEIICHIITO MASUO
    • H01J43/18H01J43/22H01J43/26
    • H01J43/22H01J43/18H01J43/26
    • This invention relates to an electron multiplier unit and others enabling cascade multiplication of electrons through successive emission of secondary electrons in multiple stages in response to incidence of primary electrons. The electron multiplier unit has a first support member provided with an inlet aperture for letting primary electrons in, and a second support member located so as to face the first support member. These first and second support members hold an electron multiplication section for the cascade multiplication and an anode. The electron multiplication section comprises at least a first dynode of a box type and a second dynode having a reflection type secondary electron emission surface located so as to face the first dynode and arranged to receive secondary electrons from the first dynode and to emit secondary electrons to a side where the first dynode is located. The anode is located at a position where the secondary electrons emitted from the first dynode do not directly arrive, and the second dynode alters a travel path of secondary electrons so as to be kept in a space between the first and second support members.
    • 本发明涉及电子倍增器单元和其它能够响应于初级电子的入射而以多级连续发射二次电子的电子级联乘法。 电子倍增器单元具有第一支撑构件,该第一支撑构件设置有用于使一次电子入口的入口孔和位于第一支撑构件的第二支撑构件。 这些第一和第二支撑构件保持用于级联乘法和阳极的电子倍增部分。 电子倍增部分至少包括箱型的第一倍增极和具有反射型二次电子发射表面的第二倍增电极,所述反射型二次电子发射表面定位成面对第一倍增电极并被布置成从第一倍增电极接收二次电子并发射二次电子 第一个倍极管所在的一侧。 阳极位于从第一倍增电极发射的二次电子不直接到达的位置,并且第二倍增极改变二次电子的行进路径,以便保持在第一和第二支撑构件之间的空间中。
    • 9. 发明申请
    • DEVICE FOR MEASURING IMMUNOCHROMATOGRAPHY TEST PIECE AND LIGHT SOURCE DEVICE
    • 用于测量免疫荧光检测试剂和光源装置的装置
    • WO2004077030A8
    • 2004-11-11
    • PCT/JP2004002259
    • 2004-02-26
    • HAMAMATSU PHOTONICS KKYAMAUCHI KAZUNORI
    • YAMAUCHI KAZUNORI
    • G01N21/47G01N21/78G01N21/86G01N21/17
    • G01N30/90G01N21/474G01N21/78G01N21/8483G01N2201/064G01N2201/0813
    • An optical head (41) comprises first and second members (51, 61) and a tubular member (71). First to fifth holes (52-56) are so formed continuously in the first member (51) as to extend therethrough. Sixth to eighth holes (62-64) are so formed continuously in the second member (61) as to extend therethrough. The second member (61) is inserted into the fifth hole (56) and secured. A semiconductor light-emitting device (23) is inserted into the sixth hole (62). The tubular member (71) has first and second tubular portions (72, 73) and is inserted in the fourth hole (55). A lens (27) is secured between a step portion formed in the border between the second and third holes (53, 54) and the first tubular portion (72). A beam-shaping member (25) is secured between a step portion formed in the border between the fourth and fifth holes (55, 56) and the second member (61).
    • 光学头(41)包括第一和第二构件(51,61)和管状构件(71)。 第一至第五孔(52-56)在第一构件(51)中连续形成以延伸穿过其中。 第六至第八孔(62-64)在第二构件(61)中连续形成以延伸穿过其中。 第二构件(61)插入第五孔(56)并固定。 半导体发光器件(23)插入第六孔(62)中。 管状构件(71)具有第一和第二管状部分(72,73),并且插入第四孔(55)中。 透镜(27)固定在第二和第三孔(53,54)与第一管状部分(72)之间边界上形成的台阶部分之间。 光束成形构件(25)固定在形成在第四和第五孔(55,56)和第二构件(61)之间的边界的台阶部分之间。