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    • 5. 发明申请
    • POROUS PATTERN SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    • 多孔图案半导体结构和半导体器件及其制造方法
    • WO2009038324A2
    • 2009-03-26
    • PCT/KR2008/005464
    • 2008-09-17
    • CHUNGBUK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATIONCHO, Yong Hoon
    • CHO, Yong Hoon
    • H01L33/00
    • H01L33/16H01L33/007
    • A semiconductor structure, device, and method of manufacturing the same are provided. The manufacturing method includes etching a substrate or the surface of a semiconductor layer formed on the substrate using a wet chemical etching method or a wet photoelectrochemical etching method to form a porous structure, and re-forming a desired semiconductor layer on the porous structure, so that reduced defect density of the re-formed semiconductor layer enables the porous structure to have improved performance and characteristics. Also, the method includes forming a porous structure on a semiconductor emission layer to increase light extraction efficiency of the semiconductor emission layer, and combining a fluorescent or light-emitting material with an internal or peripheral part of the formed porous structure to efficiently emit various colors of light.
    • 提供了半导体结构,器件及其制造方法。 该制造方法包括使用湿化学蚀刻法或湿式光电化学蚀刻法蚀刻形成在基板上的基板或半导体层的表面,以形成多孔结构,并在多孔结构上重新形成期望的半导体层,因此 降低重新形成的半导体层的缺陷密度使多孔结构具有改进的性能和特性。 此外,该方法包括在半导体发射层上形成多孔结构以增加半导体发射层的光提取效率,并将荧光或发光材料与形成的多孔结构的内部或外围部分组合以有效地发射各种颜色 的光。