专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO1997003342A1 AUTOMATED CALIBRATION OF TEMPERATURE SENSORS IN RAPID THERMAL PROCESSING 审中-公开
标题翻译：温度传感器在快速热处理中的自动校准
公开(公告)号：WO1997003342A1
公开(公告)日：1997-01-30
申请号：PCT/US1996011545
申请日：1996-07-10
申请人： CVC PRODUCTS, INC.
发明人： CVC PRODUCTS, INC. , MOSLEHI, Mehrdad, M. , LEE, Yong, Jin
IPC分类号： G01K15/00
CPC分类号： G01K1/146 , G01J5/10 , G01J5/522 , G01K15/00
摘要： An automatic calibration system (10) and method for calibration of a substrate temperature sensor (21) in a thermal processing system (20). The calibration system (10) includes a temperature probe (15) associated with the substrate temperature sensor (21) to be calibrated and an actuator (19) to position the temperature probe (15) relative to the substrate (97) during a calibration cycle. The actuator (19) and temperature probe (15) can be incorporated into the thermal processing system (20) in order to maintain the thermal processing system cleanliness and integrity during a calibration cycle, and to allow rapid automated calibration. In the preferred embodiment, the temperature probe (15) and the actuator (19) are implemented in the gas showerhead assembly (98) of a rapid thermal processing system (20).
摘要翻译：一种用于在热处理系统（20）中校准基板温度传感器（21）的自动校准系统（10）和方法。校准系统（10）包括与要校准的衬底温度传感器（21）相关联的温度探测器（15）和在校准循环期间相对于衬底（97）定位温度探针（15）的致动器（19）。致动器（19）和温度探头（15）可以被结合到热处理系统（20）中，以便在校准周期期间保持热处理系统的清洁度和完整性，并允许快速的自动校准。在优选实施例中，温度探测器（15）和致动器（19）被实现在快速热处理系统（20）的气体喷头组件（98）中。

2. 发明申请

WO0114618A3 APPARATUS AND METHOD FOR ELECTROPLATING A MATERIAL LAYER ONTO A WAFER 审中-公开
标题翻译：将材料层电镀到波浪上的装置和方法
公开(公告)号：WO0114618A3
公开(公告)日：2001-07-26
申请号：PCT/US0022312
申请日：2000-08-14
申请人： CVC PRODUCTS INC
发明人： PARANJPE AJIT P , MOSLEHI MEHRDAD M
IPC分类号： C25D7/12
CPC分类号： C25D17/001 , C25D7/123
摘要： An apparatus and method for electroplating a material layer onto a wafer is disclosed. The apparatus comprises a wafer support for maintaining a wafer within an electrolyte solution during electroplating. A probe, proximate the wafer support, receives an electrical current and is operable to electrically couple to the wafer. An anode comprising the material is proximate the wafer support. An anode source is electrically coupled to the anode. The anode source induces electrical current between the wafer and the anode by providing a potential difference to the anode such that the anode is positively charged relative to the wafer. A current controller varies the induced electrical current as the material is deposited upon the wafer.
摘要翻译：公开了一种用于将材料层电镀到晶片上的装置和方法。该装置包括用于在电镀期间将晶片保持在电解质溶液内的晶片支撑件。靠近晶片支架的探头接收电流并且可操作以电耦合到晶片。包括该材料的阳极靠近晶片支撑。阳极源电耦合到阳极。阳极源通过向阳极提供电位差使得阳极相对于晶片呈正电荷而在晶片和阳极之间引起电流。当材料沉积在晶片上时，电流控制器改变感应的电流。

3. 发明申请

WO0063966A3 METHOD FOR PLANARIZED DEPOSITION OF A MATERIAL 审中-公开
标题翻译：材料平面沉积的方法
公开(公告)号：WO0063966A3
公开(公告)日：2001-04-05
申请号：PCT/US0008676
申请日：2000-03-30
申请人： CVC PRODUCTS INC
发明人： MOSLEHI MEHRDAD M
IPC分类号： H01L21/768
CPC分类号： H01L21/76879 , H01L21/7688
摘要： A method for selective deposition of a material, such as copper, to form planarized inlaid device interconnect structures. Once a formation is filled with metallization material, deposition is automatically ceased in situ to form a globally planarized interconnect structure. In one embodiment, a blocking agent layer inhibits material nucleation and deposition at the substrate surface plane until the formation is filled, and then flows over the filled inlaid metallization structure to cease further material deposition and to form a planarized surface without a need for chemical-mechanical polishing. In another embodiment, an enhancement agent is provided within formations to reduce material nucleation time, resulting in selective deposition of the material proximate to the enhancement agent layer within trenches and holes. A nucleation suppressing agent can be included in the deposition ambient to increase nucleation delay and to suppress material deposition over the patterned field regions and on the formation sidewalls.
摘要翻译：用于选择性沉积诸如铜的材料以形成平坦化的镶嵌器件互连结构的方法。一旦地层填充有金属化材料，就会自动停止沉积，以形成一个全局平面化的互连结构。在一个实施方案中，阻挡剂层抑制基材表面平面处的材料成核和沉积，直到形成被填充，然后流过填充的镶嵌金属化结构以停止进一步的材料沉积并形成平坦化表面，而不需要化学 - 机械抛光。在另一个实施方案中，在地层内提供增强剂以减少材料成核时间，导致材料在沟槽和孔内靠近增强剂层的选择性沉积。成核抑制剂可以包括在沉积环境中以增加成核延迟并抑制在图案化的场区域和形成侧壁上的材料沉积。

4. 发明申请

WO1998029704A1 THERMALLY CONDUCTIVE CHUCK FOR VACUUM PROCESSOR 审中-公开
标题翻译：用于真空处理器的热导式止回阀
公开(公告)号：WO1998029704A1
公开(公告)日：1998-07-09
申请号：PCT/US1997024185
申请日：1997-12-30
申请人： CVC PRODUCTS, INC.
发明人： CVC PRODUCTS, INC. , MOSLEHI, Merhdad, M.
IPC分类号： F28F07/00
CPC分类号： C23C16/463 , C23C14/50 , C23C14/541 , C23C16/4585 , C23C16/46 , C23C16/466 , H01L21/67103
摘要： A chuck body (38) mounts a substrate (64) within a vacuum chamber (46). An intermediate sealing structure (44) seals the chuck body (38) to the substrate (64) and forms a pressurizable region within the vacuum chamber (46).
摘要翻译：卡盘主体（38）将基板（64）安装在真空室（46）内。中间密封结构（44）将卡盘主体（38）密封到基板（64）上并在真空室（46）内形成可加压区域。

5. 发明申请

WO1997003221A1 MAGNETRON CATHODE APPARATUS AND METHOD FOR SPUTTERING 审中-公开
标题翻译： MAGNETRON CATHODE设备和溅射方法
公开(公告)号：WO1997003221A1
公开(公告)日：1997-01-30
申请号：PCT/US1996011565
申请日：1996-07-10
申请人： CVC PRODUCTS, INC.
发明人： CVC PRODUCTS, INC. , MOSLEHI, Mehrdad, M. , HEIMANSON, Dorian , DAVIS, Cecil, J. , OMSTEAD, Thomas, R
IPC分类号： C23C14/34
CPC分类号： H01J37/3435 , C23C14/3407 , C23C14/35 , H01J37/3408 , H01J37/3497
摘要： A magnetron sputtering system (10) is provided that uses cooling channels in the magnetron assembly (20) to cool the target (16). The magnetron sputtering system (10) also generates low pressure region in the magnetron chamber (37) such that the backing plate (18) sees a pressure differential much lower than atmospheric pressure. The backing plate (18) is reduced in thickness and provides less of a barrier to the generated magnetic field.
摘要翻译：提供磁控溅射系统（10），其使用磁控管组件（20）中的冷却通道来冷却目标（16）。磁控溅射系统（10）还在磁控管室（37）中产生低压区域，使得背板（18）看到的压差远低于大气压。背板（18）的厚度减小，并且对所产生的磁场提供较小的屏障。

6. 发明申请

WO1998001893A1 APPARATUS AND METHOD FOR MULTI-ZONE HIGH-DENSITY INDUCTIVELY-COUPLED PLASMA GENERATION 审中-公开
标题翻译：多区高密度电感耦合等离子体发生装置及方法
公开(公告)号：WO1998001893A1
公开(公告)日：1998-01-15
申请号：PCT/US1997012243
申请日：1997-07-09
申请人： CVC PRODUCTS, INC.
发明人： CVC PRODUCTS, INC. , MOSLEHI, Mehrdad, M.
IPC分类号： H01L21/00
CPC分类号： H01J37/321
摘要： A multi-zone high-density inductively-coupled plasma source includes a first individually controlled RF antenna segment for producing a plasma from a process gas. A second individually controlled coil segment is included in the ICP source for producing a plasma from a process gas. In various embodiments, more than two sets of individually controlled coil segments may be used. In one embodiment, a separate power supply may be used for each coil segment individually. Another aspect of this invention is a hermetically-sealed inductively-coupled plasma source structure and method of fabrication which eliminates the possibility of process contamination, improves the source hardware reliability and functionality, and improves the vacuum integrity and ultimate base pressure of the plasma system.
摘要翻译：多区高密度感应耦合等离子体源包括用于从工艺气体产生等离子体的第一单独控制的RF天线段。 ICP源中包括第二个单独控制的线圈段，用于从工艺气体产生等离子体。在各种实施例中，可以使用多于两组的单独控制的线圈段。在一个实施例中，单独的电源可以单独用于每个线圈段。本发明的另一方面是密封的电感耦合等离子体源结构和制造方法，其消除了工艺污染的可能性，提高了源硬件的可靠性和功能性，并提高了等离子体系统的真空完整性和最终的基础压力。

7. 发明专利

DE19981146T1 未知
公开(公告)号：DE19981146T1
公开(公告)日：2000-08-10
申请号：DE19981146
申请日：1999-05-20
申请人： CVC PRODUCTS INC
发明人： MOSLEHI MEHRDAD M , CHENG SHIYUAN , DAVIS CECIL J , HEIMANSON DORIAN
IPC分类号： B05D5/12 , C23C14/00 , C23C14/22 , C23C14/35 , C23C14/58 , H01F3/00 , H01F5/00 , H01F7/20 , H01F41/14 , H01F41/18 , H01H1/00 , B29C35/08 , H01F1/00
摘要： An electromagnet assembly magnetically orients a thin magnetic film deposited onto a surface of a substrate. The magnetic orientation can take place in a low-pressure processing environment such as during the deposition of the thin magnetic film or during a subsequent operation such as annealing. The electromagnet assembly includes a plate-shaped core located adjacent to the substrate and two or more electromagnetic coils that are wrapped in different directions around the core. Electrical currents conveyed through the electromagnetic coils are controlled for orienting a substantially uniaxial magnetic field throughout a range of angular positions in a plane of the substrate surface.

8. 发明专利

AU2209200A Semiconductor chip interconnect barrier material and fabrication method 未知
公开(公告)号：AU2209200A
公开(公告)日：2000-07-12
申请号：AU2209200
申请日：1999-12-21
申请人： CVC PRODUCTS INC
发明人： PARANJPE AJIT P , MOSLEHI MEHRDAD M , BUBBER RANDHIR S , VELO LINO A
IPC分类号： H01L21/285 , H01L21/4763 , H01L21/768 , H01L23/532
摘要： A microelectronic semiconductor interconnect structure barrier and method of deposition provide improved conductive barrier material properties for high-performance device interconnects. The barrier comprises a dopant selected from the group consisting of platinum, palladium, iridium, rhodium, and time. The barrier can comprises a refractory metal selected from the group consisting of tantalum, tungsten titanium, chromium, and cobalt, and can also comprise a third element selected from the group consisting of carbon, oxygen and nitrogen. The dopant and other barrier materials can be deposited by chemical-vapor deposition to achieve good step coverage and a relatively conformal thin film with a good nucleation surface for subsequent metallization such as copper metallization. In one embodiment, the barrier suppresses diffusion of copper into other layers of the device, including the inter-metal dielectric, pre-metal dielectric, and transistor structures.

9. 发明专利

GB2343198A Thin-film processing electromagnet for low-skew magnetic orientation 未知
公开(公告)号：GB2343198A
公开(公告)日：2000-05-03
申请号：GB0000436
申请日：1999-05-20
申请人： CVC PRODUCTS INC
发明人： MOSLEHI MEHRDAD M , CHENG SHIYUAN , CHEN XIANGQUN , DAVIS CECIL J
IPC分类号： C23C14/34 , C23C14/35 , C23C16/08 , C23C16/10 , C23C16/16 , C23C16/18 , H01F3/02 , H01F7/06 , H01F7/20 , H01F7/00 , H01F3/00
摘要： An electromagnet having one or more coils wrapped around a plate-shaped core produces a uniaxial magnetic field in the vicinity of a substrate surface for orienting a magnetic film deposited onto the substrate surface. Variations in the magnetic mass of the plate-shaped core of in the magnetic permeability of the core mass are made to reduce angular skew and to improve uniformity of the uniaxial magnetic field. The variations generally involve a reduction in magnetic mass or permeability near a center (64) of the core with respect to a periphery of the core (56). Cavities of various sizes and shapes but having symmetry with a magnetic axis can be formed in the core for this purpose. Recesses (60, 62), coolant passages (70), plugs (72), diagonal passages (74), front surface (52), and notches (58) are present.

10. 发明专利

GB2319262B Permanent magnet array apparatus and method 未知
公开(公告)号：GB2319262B
公开(公告)日：1999-02-24
申请号：GB9800382
申请日：1996-07-10
申请人： CVC PRODUCTS INC
发明人： HEIMANSON DORIAN , MOSLEHI MERHDAD M , SPRONZ PAUL E , OMSTEAD THOMAS R
IPC分类号： C23C14/35 , H01F7/02 , H01J37/34 , C23C14/34

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式