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1. 发明公开

EP4100721A1 EUV-REFLEKTOMETER 有权转让
公开(公告)号：EP4100721A1
公开(公告)日：2022-12-14
申请号：EP21703688.8
申请日：2021-02-05
申请人： Carl Zeiss SMT GmbH , Bestec GmbH
发明人： GIESSEL, Tatjana , ROESSNER, Marco
IPC分类号： G01N21/33 , G01N21/55 , G01N21/956

2. 发明授权

EP2223327B1 METHODS AND SYSTEMS FOR REMOVING A MATERIAL FROM A SAMPLE 有权转让
标题翻译：方法和系统材料去除从样本
公开(公告)号：EP2223327B1
公开(公告)日：2013-04-17
申请号：EP08864869.6
申请日：2008-12-18
申请人： Carl Zeiss SMS GmbH
发明人： AUTH, Nicole , SPIES, Petra , BRET, Tristan , BECKER, Rainer , HOFMANN, Thorsten , EDINGER, Klaus
IPC分类号： H01J37/28 , C23F4/00 , H01L21/66 , H01L21/768 , H01J37/305
CPC分类号： C23F4/00 , H01J37/3056 , H01J2237/28 , H01J2237/3174 , H01L21/76894 , H01L22/22 , H01L2924/0002 , H01L2924/00

3. 发明授权

EP1664924B8 METHOD FOR HIGH-RESOLUTION ETCHING OF THIN LAYERS WITH ELECTRON BEAMS 失效转让
标题翻译：用电子束对薄层进行高分辨率蚀刻的方法
公开(公告)号：EP1664924B8
公开(公告)日：2012-12-05
申请号：EP04764051.1
申请日：2004-08-12
申请人： Carl Zeiss SMS GmbH
发明人： KOOPS, Hans, W., P. , EDINGER, Klaus , BABIN, Sergey , HOFMANN, Thorsten , SPIES, Maria
IPC分类号： G03F1/74 , H01J37/305 , C23F4/00 , H01L21/768 , H01L21/3213
CPC分类号： G03F1/74 , H01J37/3056 , H01J2237/31744 , H01L21/31122 , H01L21/32135

4. 发明授权

EP2313914B1 VERFAHREN ZUM ELEKTRONENSTRAHLINDUZIERTEN ÄTZEN 有权转让
标题翻译：方法电子诱导蚀刻
公开(公告)号：EP2313914B1
公开(公告)日：2012-08-08
申请号：EP09777868.2
申请日：2009-08-13
申请人： Carl Zeiss SMS GmbH
发明人： AUTH, Nicole , SPIES, Petra , BECKER, Rainer , HOFMANN, Thorsten , EDINGER, Klaus
IPC分类号： H01L21/311 , H01L21/3065 , H01L21/3213
CPC分类号： H01L21/3065 , H01L21/31116 , H01L21/32136
摘要： The invention relates to a method for electron beam induced etching of a material (100, 200). Said method consists of the following steps: at least one etching gas is provided on one area of the material (100, 200) on which an electron beam strikes said material (100, 200) and at least one passivation gas that is used to slow down or prevent spontaneous etching by the at least one etching gas is provided.

5. 发明公开

EP2150855A1 METHOD AND APPARATUS FOR DETERMINING THE RELATIVE OVERLAY SHIFT OF STACKED LAYERS 失效转让
标题翻译：为了确定相对覆盖方法和装置OFFSET叠层
公开(公告)号：EP2150855A1
公开(公告)日：2010-02-10
申请号：EP08716358.0
申请日：2008-03-07
申请人： Carl Zeiss SMS GmbH
发明人： ARNZ, Michael , KLOSE, Gerd
IPC分类号： G03F7/20
CPC分类号： G03F7/70633
摘要： A method is provided for determining the relative overlay shift of stacked layers, said method comprising the steps of: a) providing a reference image including a reference pattern that comprises first and second pattern elements; b) providing a measurement image of a measurement pattern, which comprises a first pattern element formed by a first one of the layers and a second pattern element formed by a second one of the layers; c) weighting the reference or measurement image such that a weighted first image is generated, in which the first pattern element is emphasized relative to the second pattern element; d) determining the relative shift of the first pattern element on the basis of the weighted first image and of the measurement or reference image not weighted in step c); e) weighting the reference or measurement image such that a weighted second image is generated, in which the second pattern element is emphasized relative to the first pattern element; f) determining the relative shift of the second pattern element on the basis of the weighted second image and of the measurement or reference image not weighted in step e); g) determining the relative overlay shift on the basis of the relative shifts determined in steps d) and f).

6. 发明公开

EP1587128A1 Apparatus and method for investigating or modifying a surface with a beam of charged particles 有权转让
标题翻译：装置和方法用于检查或表面改性由带电粒子束的装置
公开(公告)号：EP1587128A1
公开(公告)日：2005-10-19
申请号：EP04008972.4
申请日：2004-04-15
申请人： NaWoTec GmbH
发明人： Edinger, Klaus , Sellmair, Josef , Hofmann, Thorsten
IPC分类号： H01J37/02 , H01J37/28
CPC分类号： H01J37/026 , H01J37/09 , H01J37/28 , H01J2237/0041 , H01J2237/026
摘要： An apparatus for investigating and / or modifying a sample with charged particles, in particular a scanning electron microscope, is provided. The apparatus comprises a beam (1, 2) of charged particles, a shielding element (10) having an opening (30) for the beam of charged particles to pass through, wherein the opening (30) is sufficiently small and the shielding element (10) sufficiently closely positioned to the surface (20) of the sample to reduce the influence of charge accumulation effects at the surface on the beam of charged particles.

7. 发明公开

EP1543373A2 BELEUCHTUNGSVORRICHTUNG MIT VORRICHTUNG ZUR VERMINDERUNG DER KOHÄRENZ EINES LICHTBÜNDELS 失效转让
标题翻译：与装置用照明装置，以减少光束的协调性
公开(公告)号：EP1543373A2
公开(公告)日：2005-06-22
申请号：EP03785604.4
申请日：2003-09-22
申请人： Carl Zeiss SMS GmbH
发明人： BISCHOFF, Jörg , BRUNNER, Robert , BURKHARDT, Matthias , ERDMANN, Lars , STEINER, Reinhard
IPC分类号： G02B27/48
CPC分类号： G02B27/106 , G02B21/06 , G02B27/123 , G02B27/126 , G02B27/144 , G02B27/145
摘要： The invention relates to an lighting device comprising a beam multiplication device (1) which divides a coherent beam (18) into a plurality of partial beams (20, 21) and combines said partial beams to form a bundle of rays (26) once they have followed paths having different optical lengths, the partial beams (27, 28, 29, 30) diverging in said bundle of rays. Said lighting device also comprises a micro-optical system (3) which is arranged downstream from the beam multiplication device (1) and comprises a plurality of optical elements (19) arranged in a grid-type manner. Said bundle of rays (26) hits the micro-optical system (3), and the partial beams (27, 28, 29, 30) of the bundle of rays (26) thus hit each optical element (19) at different angles, in such a way that a plurality of illumination partial beams (M1, M2, M3, M4) irradiate from each optical element (19) in different diffusion directions and can be used to illuminate an object field (31).

8. 发明公开

EP2313913A1 VERFAHREN ZUM ELEKTRONENSTRAHLINDUZIERTEN ÄTZEN VON MIT GALLIUM VERUNREINIGTEN SCHICHTEN 有权转让
标题翻译：方法已植入蛋鸡镓的电子诱导蚀刻
公开(公告)号：EP2313913A1
公开(公告)日：2011-04-27
申请号：EP09777811.2
申请日：2009-08-11
申请人： Carl Zeiss SMS GmbH
发明人： AUTH, Nicole , SPIES, Petra , BECKER, Rainer , HOFMANN, Thorsten , EDINGER, Klaus
IPC分类号： H01L21/311 , H01L21/3213 , H01L21/3065
CPC分类号： H01L21/3065 , H01J37/3056 , H01L21/31116 , H01L21/32136
摘要： The invention relates to a method for electron beam induced etching of a layer (120, 122) contaminated with gallium. Said method consists of the following steps: at least one first compound containing halogen is provided as an etching gas on one area on which an electron beam strikes the layer (120, 220) and at least one second compound containing halogen is provided as a precursor gas for removing gallium from said area.

9. 发明授权

EP1515172B1 Spannungsarme Optikfassung 有权转让
标题翻译：低应力光学底座
公开(公告)号：EP1515172B1
公开(公告)日：2006-12-13
申请号：EP04021071.8
申请日：2004-09-04
申请人： Carl Zeiss SMS GmbH
发明人： Hage, Knut
IPC分类号： G02B7/02
CPC分类号： G02B7/026

10. 发明公开

EP1664924A2 METHOD FOR HIGH-RESOLUTION PROCESSING OF THIN LAYERS WITH ELECTRON BEAMS 失效转让
标题翻译：方法对于高分辨率薄层蚀刻电子手段
公开(公告)号：EP1664924A2
公开(公告)日：2006-06-07
申请号：EP04764051.1
申请日：2004-08-12
申请人： NaWoTec GmbH
发明人： KOOPS, Hans, W., P. , EDINGER, Klaus , BABIN, Sergey , HOFMANN, Thorsten , SPIES, Maria
IPC分类号： G03F1/00 , H01J37/305 , C23F4/00 , H01L21/768
CPC分类号： G03F1/74 , H01J37/3056 , H01J2237/31744 , H01L21/31122 , H01L21/32135
摘要： The present invention concerns a method for etching a chromium layer in a vacuum chamber with the method steps of introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and introducing an oxygen containing compound into the vacuum chamber. According to a further aspect, the present invention relates to a further method for the highly resolved removal of a layer out of metal and/or metal oxide which is arranged on an isolator or a substrate having poor thermal conductivity, comprising the method steps of arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam is guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer is performed without the supply of reaction gases into the vacuum chamber.

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