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1. 发明专利

JP2010251801A Euv projection lens with mirror comprising material having different inclination sign against temperature rise according to thermal expansion coefficient around zero transition temperature 有权
标题翻译：具有包含材料的反射镜的EUV投影镜头，具有根据零度过渡温度下的热膨胀系数的温度上升的不同的包含标志
公开(公告)号：JP2010251801A
公开(公告)日：2010-11-04
申请号：JP2010167456
申请日：2010-07-26
申请人： Carl Zeiss Smt Ag , カール・ツァイス・エスエムティー・アーゲー
发明人： DINGER UDO , EISERT FRANK , KOEHLER STEFAN , OCHSE ANDREAS , ZELLNER JOHANNES , LOWISCH MARTIN , LAUFER TIMO
IPC分类号： H01L21/027 , G02B5/10 , G02B13/16 , G02B13/18 , G02B13/24 , G02B17/08
摘要： PROBLEM TO BE SOLVED: To provide a projection lens (1) for short wavelength specifically for the wavelength of λ
摘要翻译：要解决的问题：为了提供具有多个反射镜（M1，M2，M3，M4，M5，M6）的波长λ<157nm的波长的短波长投影透镜（1）设置在与光轴（5）相关的精确位置。解决方案：镜子（M1，M2，M3，M4，M5，M6）设有多层膜。使用与热膨胀系数的零转换温度附近的温度相对应的倾斜值的信号特别不同的每个热膨胀系数的倾斜度不同的至少两种不同的镜面材料。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2010187002A Projection exposure method, system and objective 有权
标题翻译：投影曝光方法，系统和目标
公开(公告)号：JP2010187002A
公开(公告)日：2010-08-26
申请号：JP2010047084
申请日：2010-02-12
申请人： Carl Zeiss Smt Ag , カール・ツァイス・エスエムティー・アーゲー
发明人： JUERGENS DIRK DR
IPC分类号： H01L21/027 , G02B13/14 , G02B13/18 , G02B13/24 , G02B17/08 , G03F7/20
CPC分类号： G03F7/702 , G03F7/70058 , G03F7/70258
摘要： PROBLEM TO BE SOLVED: To provide a projection exposure method of exposing a radiation-sensitive substrate by at least one image of a mask pattern, to provide a projection exposure system, and to provide a projection objective. SOLUTION: This projection exposure method includes a step of exposing an exposure area of a radiation-sensitive substrate with at least one image of a pattern of a mask in a scanning operation which includes a step of moving the mask M relative to an effective object field of the projection objective PO and simultaneously moving the substrate relative to an effective image field of the projection objective in respective scanning directions. The method includes a step of changing imaging properties of the projection objective actively during the scanning operation according to a predetermined time profile to change dynamically at least one aberration of the projection objective between a beginning and an end of the scanning operation. The step of changing the imaging properties of the projection objective includes a step of changing an optical characteristic of a mirror arranged optically near a visual field surface in a projection beam path by changing a surface profile of the reflecting surface of the mirror in an optical used area. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供通过掩模图案的至少一个图像曝光辐射敏感基板的投影曝光方法，以提供投影曝光系统，并提供投影物镜。解决方案：该投影曝光方法包括在扫描操作中用掩模图案的至少一个图像曝光辐射敏感基板的曝光区域的步骤，该扫描操作包括使掩模M相对于投影物镜PO的有效物场，并且相对于投影物镜的有效像场同时移动基板。该方法包括根据预定时间轮廓在扫描操作期间主动地改变投影物镜的成像特性以在扫描操作的开始和结束之间动态地改变投影物镜的至少一个像差的步骤。改变投影物镜的成像特性的步骤包括通过改变光学用的反射镜的反射表面的表面轮廓来改变在投射光束路径中光学附近的镜子的光学特性的步骤区。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2010153875A Illumination system of microlithographic projection exposure apparatus 有权
标题翻译：微电子投影曝光装置照明系统
公开(公告)号：JP2010153875A
公开(公告)日：2010-07-08
申请号：JP2009299525
申请日：2009-12-22
申请人： Carl Zeiss Smt Ag , カール・ツァイス・エスエムティー・アーゲー
发明人： FIOLKA DAMIAN , MUELLER RALF , MAJOR ANDRAS
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70208 , G03F7/70116
摘要： PROBLEM TO BE SOLVED: To provide an illumination system of a microlithographic projection exposure apparatus which images a mask on a light sensitive surface, especially an illumination system accommodating a mirror array or other beam deflection elements, and a method of operating the microlithographic projection exposure apparatus. SOLUTION: An illumination system of a microlithographic projection exposure apparatus (10) includes a number of beam deflection elements. Each of the beam deflection elements (Mij) deflects an impinging light beam by a deflection angle that is variable in response to control signals. The light beam reflected from the beam deflection elements produces spots illuminated in a system pupil surface (70). The number of spots illuminated in the system pupil surface (70) in an exposure process, during which the mask is imaged on the light sensitive surface, is larger than the number of beam deflection elements (Mij). This is accomplished with the help of a beam multiplier unit (57) that multiplies the light beams reflected from the beam deflection elements (Mij). COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在光敏表面上成像掩模的微光刻投影曝光装置的照明系统，特别是容纳反射镜阵列或其他光束偏转元件的照明系统，以及操作微光刻法的方法投影曝光装置。解决方案：微光刻投影曝光装置（10）的照明系统包括多个光束偏转元件。每个光束偏转元件（Mij）使入射光束偏转响应于控制信号而变化的偏转角。从光束偏转元件反射的光束产生在系统光瞳表面（70）中照亮的光斑。在掩模在光敏表面上成像的曝光过程中在系统光瞳表面（70）中照射的光斑的数量大于光束偏转元件（Mij）的数量。这是借助于将从光束偏转元件（Mij）反射的光束相乘的光束倍增器单元（57）来实现的。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2010147482A Projection exposure method and projection exposure device for micro lithography 有权
标题翻译：投影曝光方法和投影曝光装置微雕刻
公开(公告)号：JP2010147482A
公开(公告)日：2010-07-01
申请号：JP2009299557
申请日：2009-12-22
申请人： Carl Zeiss Smt Ag , カール・ツァイス・エスエムティー・アーゲー
发明人： ZIMMERMANN JOERG , FELDMANN HEIKO , HEIL TILMANN , GRAEUPNER PAUL , GEBHART ULRICH
IPC分类号： H01L21/027
CPC分类号： G03F7/70333 , G03F9/7026
摘要： PROBLEM TO BE SOLVED: To provide a projection exposure method and a projection exposure device suitable for performing this method.
SOLUTION: A projection exposure method for exposing a radiation-sensitive substrate arranged on image surface area of a projection object appliance, which uses at least one image of mask pattern arranged on the object surface area of the projection object appliance, includes the steps of: exposing a substrate by means of a pattern image in valid image sight of the projection object appliance during exposure time interval; and changing relative position between the substrate surface and the focal surface of the projection object appliance during the exposure time interval, by means of a method for exposing an image point in valid image sight at a different focal position of a mask image during the exposure time interval. Active compensation applied to at least one portion of at least one imaging aberration induced by change of focal position during the projection time interval provides an effect that imaging quality is not deteriorated significantly by change of focus during the projection time interval.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供适于执行该方法的投影曝光方法和投影曝光装置。解决方案：使用布置在投影对象器具的图像表面区域上的放射线敏感衬底的曝光方法，其使用布置在投影对象器具的物体表面上的至少一个掩模图案的图像，其包括：步骤：在曝光时间间隔期间通过图案图像在投影对象器具的有效图像视野中曝光基板; 以及在曝光时间间隔期间通过用于在曝光时间期间在掩模图像的不同焦点位置曝光有效图像视觉中的图像点的方法来改变投影对象器具的基板表面和焦点表面之间的相对位置间隔。通过在投影时间间隔期间由焦点位置的改变引起的至少一个成像像差的至少一部分的有效补偿提供了在投影时间间隔期间通过焦点变化而不会显着降低成像质量的效果。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2010107988A Microlithography projection optical system, method for manufacturing device, and method to design optical surface 有权
标题翻译：微型投影光学系统，制造装置的方法和设计光学表面的方法
公开(公告)号：JP2010107988A
公开(公告)日：2010-05-13
申请号：JP2009265616
申请日：2009-10-30
申请人： Carl Zeiss Smt Ag , カール・ツァイス・エスエムティー・アーゲー
发明人： MANN HANS-JUERGEN , ULRICH WILHELM , PRETORIUS MARCO
IPC分类号： G02B17/00 , G02B13/18 , G03F7/20 , H01L21/027
CPC分类号： G03F7/70233 , G02B13/0065 , G02B13/16 , G02B17/0621 , G02B17/0663 , G02B17/08 , G02B17/0804 , G02B21/04 , G03F7/70308
摘要： PROBLEM TO BE SOLVED: To improve an optical system which can be used as a projection objective mirror in a microlithography projection aligner concerning resolution in illumination wavelengths. SOLUTION: The microlithography projection optical system (101) includes a plurality of elements arranged to image radiation from an object plane (103) to an image plane (102), at least one of the elements being a reflective element that has a rotationally asymmetric surface positioned in a path of the radiation. The rotationally asymmetric surface deviates from a rotationally symmetric surface by about 10 nm or more. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了改善可用作微光刻投影对准器中的投影物镜的光学系统，其涉及照明波长的分辨率。解决方案：微光刻投影光学系统（101）包括被布置成将来自物平面（103）到图像平面（102）的辐射成像的多个元件，至少一个元件是具有位于辐射路径中的旋转非对称表面。旋转非对称表面偏离旋转对称表面约10nm或更大。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009075557A Method and device for controlling a plurality of actuators and illumination devices for lithography 审中-公开
标题翻译：用于控制大量执行器和照明装置的方法和装置
公开(公告)号：JP2009075557A
公开(公告)日：2009-04-09
申请号：JP2008166318
申请日：2008-06-25
申请人： Carl Zeiss Smt Ag , カール・ツァイス・エスエムティー・アーゲー
发明人： ROHE THOMAS , FISCHER JUERGEN , BACH FLORIAN
IPC分类号： G03F7/20 , G02B26/08 , H01L21/027
CPC分类号： G03F7/70291 , G03F7/70116 , G03F7/70508 , G03F7/70525
摘要： PROBLEM TO BE SOLVED: To control a plurality of actuators having a controller or a plurality of actuators controllable by the controller.
SOLUTION: At least several groups of actuators (21) are individually controllable by a controller (30) and to each actuator or each group of actuators is assigned at least one memory unit (24), which can store at least one parameter for controlling one or more actuators. At least two parameters are assigned to each actuator or each group of actuators, with one position of the actuator(s) being assigned to each of the parameters.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：控制具有由控制器控制的控制器或多个致动器的多个致动器。解决方案：至少几组致动器（21）可由控制器（30）单独控制，并且每个致动器或每组致动器被分配至少一个存储单元（24），其可以存储至少一个参数用于控制一个或多个致动器。至少两个参数被分配给每个致动器或每组致动器，其中致动器的一个位置被分配给每个参数。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008218422A Particle optical device and charged particle beam operating method 审中-公开
标题翻译：粒子光学装置和充电颗粒光束操作方法
公开(公告)号：JP2008218422A
公开(公告)日：2008-09-18
申请号：JP2008099010
申请日：2008-04-07
申请人： Applied Materials Israel , Carl Zeiss Smt Ag , アプライドマテリアルズイスラエル , カール・ツァイス・エスエムティー・アーゲー
发明人： KNIPPELMEYER RAINER , KIENZLE OLIVER , KEMEN THOMAS , MUELLER HEIKO , UHLEMANN STEPHAN , HAIDER MAXIMILIAN , CASARES ANTONIO , ROGERS STEVEN
IPC分类号： H01J37/145 , H01J20060101 , H01J37/09 , H01J37/153 , H01J37/29 , H01L21/027
CPC分类号： H01J37/04 , B82Y10/00 , B82Y40/00 , H01J37/09 , H01J37/10 , H01J37/14 , H01J37/153 , H01J37/28 , H01J37/3007 , H01J37/3177 , H01J2237/0435 , H01J2237/0453 , H01J2237/047 , H01J2237/04735 , H01J2237/04756 , H01J2237/06 , H01J2237/14 , H01J2237/2817 , H01J2237/31774
摘要： PROBLEM TO BE SOLVED: To provide a particle optical component and a particle optical system which can operate a charged particle fine beam in high accuracy. SOLUTION: The particle optical device provides a primary electron beam passage 13 for a primary electron beam for an object 7 and a secondary electron beam passage 11 up to a detecting unit 200 from the object 7, and the particle optical device is provided with an electron source unit 301 in which the primary electron beam passage 13 reaches the object 7 from the electron source unit 301, a first focusing lens providing a focusing field, an object lens 102, and a beam splitter combiner unit 400 which is arranged in the primary electron beam passage 13 between the electron source unit 301 and the object lens 102 and in the secondary electron beam passage 11 between the object lens 102 and the detecting unit 200. The object lens 102 provides the focusing field for the electron of the primary electron beam and the electron of the secondary electron beam, and the electron source device 301 is arrange in the magnetic field given by the first focusing lens. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可以高精度地操作带电粒子细束的粒子光学部件和粒子光学系统。＆lt; P＆gt;解决方案：粒子光学器件为物体7的一次电子束和二次电子束通道11提供一个电子束通道13，直到来自物体7的检测单元200，并且提供粒子光学器件具有电子源单元301，其中一次电子束通道13从电子源单元301到达物体7，提供聚焦场的第一聚焦透镜，物镜102和分束器组合器单元400布置在电子源单元301和物镜102之间的一次电子束通道13和物镜102与检测单元200之间的二次电子束通道11.物镜102为主电极的电子提供聚焦场电子束和二次电子束的电子，并且电子源装置301被布置在由第一聚焦透镜给出的磁场中。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2008199062A Lithographic apparatus and device manufacturing method 有权
公开(公告)号：JP2008199062A
公开(公告)日：2008-08-28
申请号：JP2008120509
申请日：2008-05-02
申请人： Asml Netherlands Bv , Carl Zeiss Smt Ag , エーエスエムエルネザーランズビー.ブイ. , カール・ツァイス・エスエムティー・アーゲー
发明人： STREEFKERK BOB , MULKENS JOHANNES CATHARINUS HU , BASELMANS JOHANNES JACOBUS MAT , GRAEUPNER PAUL , ENGELEN ADRIANUS FRANCISCUS PE , FINDERS JOSEF MARIA , VAN SCHOOT JAN BERNARD PLECHEL
IPC分类号： H01L21/027 , G03F7/20 , G03F7/207
CPC分类号： G03F7/70341 , G03F7/70333
摘要： PROBLEM TO BE SOLVED: To improve focus latitude and/or to stabilize contrast control in an immersion lithographic apparatus, where the position of a focus changes when accelerating a substrate table during exposure.
SOLUTION: A final element 50 in a projection system that is a parallel plate used for sealing a projection system PL against an immersion liquid 10 in immersion lithography changes an incidence angle of projection beams when the final element inclines to the optical axis of the device. Force generated by the immersion liquid is utilized passively, and the final element is moved, thus changing the focus continuously at all points on the substrate to improve the focus latitude. Some methods, such as a method for inclining the projection beams to the substrate, are disclosed.
COPYRIGHT: (C)2008,JPO&INPIT

9. 发明专利

JP2008182244A Optical integrator for illumination system of microlithographic projection exposure apparatus 审中-公开
标题翻译：微晶投影曝光装置照明系统的光学积分器
公开(公告)号：JP2008182244A
公开(公告)日：2008-08-07
申请号：JP2008014710
申请日：2008-01-25
申请人： Carl Zeiss Smt Ag , カール・ツアイス・エスエムテイ・アーゲー
发明人： WANGLER JOHANNS
IPC分类号： H01L21/027 , G02B3/00 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To provide an optical integrator for an illumination system of a microlithographic projection exposure apparatus which can be manufactured by smaller effort. SOLUTION: An optical integrator for an illumination system of a microlithographic projection exposure apparatus (10) comprises: an optical axis; and an array of first microlenses (70X) which are arranged in a first plane, have first refractive power in an X-direction perpendicular to the optical axis (OA), and have widths smaller than 2 mm in the X-direction. The integrator is further provided with an array of second microlenses (72X) to which a similar description is applied. The first and the second mirolenses (70X, 72X) have refracting surfaces that are curved in forms of circular arcs in intersecting planes, and can thus be manufactured more easily. According to the present invention, the total refractive power is split between the first refractive power and the second refractive power in such an optimized way that, in spite of the simpler shape of the microlenses, the extreme approximation of irradiance distribution in a subsequent field plane is obtained. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于能够以更小的努力制造的微光刻投影曝光装置的照明系统的光学积分器。解决方案：用于微光刻投影曝光设备（10）的照明系统的光学积分器包括：光轴; 以及布置在第一平面中的第一微透镜阵列（70X）在垂直于光轴（OA）的X方向上具有第一屈光力，并且在X方向上具有小于2mm的宽度。积分器还设置有应用了相似描述的第二微透镜阵列（72X）。第一和第二微通道（70X，72X）具有在交叉平面中以圆弧形弯曲的折射表面，因此可以更容易地制造。根据本发明，总屈光力在第一屈光力和第二屈光力之间以这样一种优化的方式被分开，即尽管微透镜的形状更简单，但随后的场平面中的辐照度分布的极近似获得。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2008181125A Projection objective for lithography 有权
标题翻译：投影目标的图像
公开(公告)号：JP2008181125A
公开(公告)日：2008-08-07
申请号：JP2008010835
申请日：2008-01-21
申请人： Carl Zeiss Smt Ag , カール・ツァイス・エスエムティー・アーゲー
发明人： FELDMANN HEIKO , BEDER SUSANNE , DODOC AURELIAN , EPPLE ALEXANDER , ROSTALSKI HANS-JUERGEN
IPC分类号： G02B13/24 , G02B13/18 , G02B17/08
CPC分类号： G02B17/0844 , G02B13/143 , G03F7/70225 , G03F7/70308
摘要： PROBLEM TO BE SOLVED: To provide a projection objective that can institute measures for correcting aberrations with both a field-constant profile and with a field-dependent profile with the aid of a simple design. SOLUTION: The projection objective for lithography includes an optical arrangement 12 of optical elements between an object plane O and an image plane B. The arrangement 12 has at least one intermediate image plane Z, the arrangement 12 further having at least two correction elements K 1 and K 2 for correcting aberrations, of which a first correction element K 1 is arranged optically at least in the vicinity of a pupil plane P and a second correction element K 2 is arranged in a region which is not optically near a pupil plane P and a field plane F. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种投影物镜，可以借助于简单的设计，采用场常数曲线和场相关曲线来校正像差的措施。解决方案：用于光刻的投影物镜包括在物平面O和像平面B之间的光学元件的光学装置12.布置12具有至少一个中间图像平面Z，该布置12还具有至少两个校正用于校正像差的元件K 1 和K 2 其中第一校正元件K 1 至少在光瞳附近平面P和第二校正元件K 2 布置在光学不靠近光瞳面P和场平面F的区域中。（C）2008，JPO＆INPIT

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