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    • 1. 发明申请
    • HIGH EFFICIENCY GATE DRIVE CIRCUIT FOR POWER TRANSISTORS
    • 用于功率晶体管的高效栅极驱动电路
    • WO2013138219A1
    • 2013-09-19
    • PCT/US2013/030134
    • 2013-03-11
    • BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITYAISIN AW CO. LTD.
    • PENG, FangZHANG, JunmingCHEN, Zhiqian
    • H03K17/16H03K17/567
    • H03K17/60H03K17/0826H03K17/166H03K17/168
    • An improved gate drive circuit is provided for a power device, such as a transistor. The gate driver circuit may include: a current control circuit; a first secondary current source that is used to control the switching transient during turn off of the power transistor and a second secondary current source that is used to control the switching transient during turn on of the power transistor. In operation, the current control circuit operates, during turn on of the power transistor, to source a gate drive current to a control node of the power transistor and, during turn off of the power transistor, to sink a gate drive current from the control node of the power transistor. The first and second secondary current sources adjust the gate drive current to control the voltage or current rate of change and thereby the overshoot during the switching transient.
    • 为诸如晶体管的功率器件提供改进的栅极驱动电路。 栅极驱动器电路可以包括:电流控制电路; 用于在功率晶体管关断期间控制开关瞬态的第一次级电流源和用于在功率晶体管导通期间控制开关瞬态的第二次级电流源。 在操作中,电流控制电路在功率晶体管的导通期间操作,以将栅极驱动电流源源于功率晶体管的控制节点,并且在关断功率晶体管期间,从控制器吸收栅极驱动电流 功率晶体管的节点。 第一和第二次级电流源调节栅极驱动电流以控制电压或电流变化率,从而在开关瞬变期间调节过冲。