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1. 发明授权

US07187027B2 Stacked capacitor-type semiconductor storage device and manufacturing method thereof 失效
标题翻译：叠层电容式半导体存储装置及其制造方法
公开(公告)号：US07187027B2
公开(公告)日：2007-03-06
申请号：US11333412
申请日：2006-01-18
申请人： Yusuke Kohyama , Takashi Ohsawa , Shizuo Sawada
发明人： Yusuke Kohyama , Takashi Ohsawa , Shizuo Sawada
IPC分类号： H01L27/108
CPC分类号： H01L27/10888 , H01L21/76831 , H01L21/76834 , H01L21/76897 , H01L27/0207 , H01L27/10852 , H01L27/10855 , H01L27/10885 , H01L2924/0002 , H01L2924/00
摘要： First and second wirings are formed on a first insulating film. Each of the wirings is arranged so that a conductive film, a silicon oxide film and a silicon nitride film are laminated. Thereafter, a silicon oxide insulating film is formed on the whole surface. The silicon oxide insulating film is etched so that a contact hole is formed between the first and second wirings. Since the silicon oxide film and the silicon nitride film exist on the conductive film of each wiring, the conductive film is not exposed at the time of etching. Thereafter, an insulating film is formed on a side wall of the contact hole, and the conductive film exposed through the contact hole is covered by the insulating film.
摘要翻译：第一和第二布线形成在第一绝缘膜上。每个布线被布置成使得导电膜，氧化硅膜和氮化硅膜层压。此后，在整个表面上形成氧化硅绝缘膜。蚀刻氧化硅绝缘膜，使得在第一和第二布线之间形成接触孔。由于在每个布线的导电膜上存在氧化硅膜和氮化硅膜，因此在蚀刻时导电膜不会露出。此后，在接触孔的侧壁上形成绝缘膜，并且通过接触孔露出的导电膜被绝缘膜覆盖。

2. 发明授权

US06551894B1 Stacked capacitor-type semiconductor storage device and manufacturing method thereof 失效
标题翻译：叠层电容式半导体存储装置及其制造方法
公开(公告)号：US06551894B1
公开(公告)日：2003-04-22
申请号：US09631830
申请日：2000-08-03
申请人： Yusuke Kohyama , Takashi Ohsawa , Shizuo Sawada
发明人： Yusuke Kohyama , Takashi Ohsawa , Shizuo Sawada
IPC分类号： H01L2120
CPC分类号： H01L27/10888 , H01L21/76831 , H01L21/76834 , H01L21/76897 , H01L27/0207 , H01L27/10852 , H01L27/10855 , H01L27/10885 , H01L2924/0002 , H01L2924/00
摘要： First and second wirings are formed on a first insulating film. Each of the wirings is arranged so that a conductive film, a silicon oxide film and a silicon nitride film are laminated. Thereafter, a silicon oxide insulating film on the whole surface. The silicon oxide insulating film is etched so that a contact hole is formed between the first and second wirings. Since the silicon oxide film and the silicon nitride film exist on the conductive film of each wiring, the conductive film is not exposed at the time of etching. Thereafter, an insulating film is formed on a side wall of the contact hole, and the conductive film exposed through the contact hole is covered by the insulating film.
摘要翻译：第一和第二布线形成在第一绝缘膜上。每个布线被布置成使得导电膜，氧化硅膜和氮化硅膜层压。此后，在整个表面上形成氧化硅绝缘膜。蚀刻氧化硅绝缘膜，使得在第一和第二布线之间形成接触孔。由于在每个布线的导电膜上存在氧化硅膜和氮化硅膜，因此在蚀刻时导电膜不会露出。此后，在接触孔的侧壁上形成绝缘膜，并且通过接触孔露出的导电膜被绝缘膜覆盖。

3. 发明申请

US20060124980A1 Stacked capacitor-type semiconductor storage device and manufacturing method thereof 失效
公开(公告)号：US20060124980A1
公开(公告)日：2006-06-15
申请号：US11333412
申请日：2006-01-18
申请人： Yusuke Kohyama , Takashi Ohsawa , Shizuo Sawada
发明人： Yusuke Kohyama , Takashi Ohsawa , Shizuo Sawada
IPC分类号： H01L29/94
CPC分类号： H01L27/10888 , H01L21/76831 , H01L21/76834 , H01L21/76897 , H01L27/0207 , H01L27/10852 , H01L27/10855 , H01L27/10885 , H01L2924/0002 , H01L2924/00
摘要： First and second wirings are formed on a first insulating film. Each of the wirings is arranged so that a conductive film, a silicon oxide film and a silicon nitride film are laminated. Thereafter, a silicon oxide insulating film is formed on the whole surface. The silicon oxide insulating film is etched so that a contact hole is formed between the first and second wirings. Since the silicon oxide film and the silicon nitride film exist on the conductive film of each wiring, the conductive film is not exposed at the time of etching. Thereafter, an insulating film is formed on a side wall of the contact hole, and the conductive film exposed through the contact hole is covered by the insulating film.

4. 发明授权

US07023044B2 Stacked capacitor-type semiconductor storage device and manufacturing method thereof 失效
公开(公告)号：US07023044B2
公开(公告)日：2006-04-04
申请号：US10893914
申请日：2004-07-20
申请人： Yusuke Kohyama , Takashi Ohsawa , Shizuo Sawada
发明人： Yusuke Kohyama , Takashi Ohsawa , Shizuo Sawada
IPC分类号： H01L27/108 , H01L29/76
CPC分类号： H01L27/10888 , H01L21/76831 , H01L21/76834 , H01L21/76897 , H01L27/0207 , H01L27/10852 , H01L27/10855 , H01L27/10885 , H01L2924/0002 , H01L2924/00
摘要： First and second wirings are formed on a first insulating film. Each of the wirings is arranged so that a conductive film, a silicon oxide film and a silicon nitride film are laminated. Thereafter, a silicon oxide insulating film is formed on the whole surface. The silicon oxide insulating film is etched so that a contact hole is formed between the first and second wirings. Since the silicon oxide film and the silicon nitride film exist on the conductive film of each wiring, the conductive film is not exposed at the time of etching. Thereafter, an insulating film is formed on a side wall of the contact hole, and the conductive film exposed through the contact hole is covered by the insulating film.

5. 发明授权

US06846733B2 Stacked capacitor-type semiconductor storage device and manufacturing method thereof 失效
标题翻译：叠层电容式半导体存储装置及其制造方法
公开(公告)号：US06846733B2
公开(公告)日：2005-01-25
申请号：US10388462
申请日：2003-03-17
申请人： Yusuke Kohyama , Takashi Ohsawa , Shizuo Sawada
发明人： Yusuke Kohyama , Takashi Ohsawa , Shizuo Sawada
IPC分类号： H01L21/28 , H01L21/316 , H01L21/768 , H01L21/8242 , H01L23/522 , H01L27/108 , H01L21/3205 , H01L21/4763
CPC分类号： H01L27/10888 , H01L21/76831 , H01L21/76834 , H01L21/76897 , H01L27/0207 , H01L27/10852 , H01L27/10855 , H01L27/10885 , H01L2924/0002 , H01L2924/00
摘要： First and second wirings are formed on a first insulating film. Each of the wirings is arranged so that a conductive film, a silicon oxide film and a silicon nitride film are laminated. Thereafter, a silicon oxide insulating film is formed on the whole surface. The silicon oxide insulating film is etched so that a contact hole is formed between the first and second wirings. Since the silicon oxide film and the silicon nitride film exist on the conductive film of each wiring, the conductive film is not exposed at the time of etching. Thereafter, an insulating film is formed on a side wall of the contact hole, and the conductive film exposed through the contact hole is covered by the insulating film.
摘要翻译：第一和第二布线形成在第一绝缘膜上。每个布线被布置成使得导电膜，氧化硅膜和氮化硅膜层压。此后，在整个表面上形成氧化硅绝缘膜。蚀刻氧化硅绝缘膜，使得在第一和第二布线之间形成接触孔。由于在每个布线的导电膜上存在氧化硅膜和氮化硅膜，因此在蚀刻时导电膜不会露出。此后，在接触孔的侧壁上形成绝缘膜，并且通过接触孔露出的导电膜被绝缘膜覆盖。

6. 发明授权

US6130450A Stacked capacitor-type semiconductor storage device and manufacturing method thereof 失效
公开(公告)号：US6130450A
公开(公告)日：2000-10-10
申请号：US720032
申请日：1996-09-27
申请人： Yusuke Kohyama , Takashi Ohsawa , Shizuo Sawada
发明人： Yusuke Kohyama , Takashi Ohsawa , Shizuo Sawada
IPC分类号： H01L21/28 , H01L21/316 , H01L21/768 , H01L21/8242 , H01L23/522 , H01L27/108 , H01L21/70
CPC分类号： H01L27/10888 , H01L21/76831 , H01L21/76834 , H01L21/76897 , H01L27/10855 , H01L27/0207 , H01L27/10852 , H01L27/10885 , H01L2924/0002
摘要： First and second wirings are formed on a first insulating film. Each of the wirings is arranged so that a conductive film, a silicon oxide film and a silicon nitride film are laminated. Thereafter, a silicon oxide insulating film is formed on the whole surface. The silicon oxide insulating film is etched so that a contact hole is formed between the first and second wirings. Since the silicon oxide film and the silicon nitride film exist on the conductive film of each wiring, the conductive film is not exposed at the time of etching. Thereafter, an insulating film is formed on a side wall of the contact hole, and the conductive film exposed through the contact hole is covered by the insulating film.

7. 发明授权

US09608526B2 DC/DC converter, on-board unit and charging device 有权
公开(公告)号：US09608526B2
公开(公告)日：2017-03-28
申请号：US14371682
申请日：2012-04-27
申请人： Susumu Okura , Takashi Ohsawa
发明人： Susumu Okura , Takashi Ohsawa
IPC分类号： H02M3/335 , B60Q1/30 , B60L11/18 , H02J5/00
CPC分类号： H02M3/33507 , B60L11/1811 , B60L2210/10 , B60Q1/30 , H02J5/005 , H02J7/025 , H02J50/12 , H02M3/33576
摘要： A DC/DC converter 1 is configured to allow separation of a primary side constitution unit 3 and a secondary side constitution unit 4 of a transformer 2. A secondary side switching element FET 2 is provided in the secondary side constitution unit 4, and controls power supply to a load 12 by intermitting an output of a secondary winding L2. The primary side constitution unit 3 detects an electrical behavior of the primary side generated by the intermittent operation of the secondary side, and controls the power supplied from the primary winding L1 to the secondary winding L2 by operating the intermittent operation of the primary side switching element FET 1 such that a cycle or duty of the intermittent operation of the secondary side falls within a predetermined range.

8. 发明授权

US09125263B2 LED lighting device 有权
标题翻译： LED照明装置
公开(公告)号：US09125263B2
公开(公告)日：2015-09-01
申请号：US14004876
申请日：2011-08-05
申请人： Norikazu Tateishi , Takashi Ohsawa
发明人： Norikazu Tateishi , Takashi Ohsawa
IPC分类号： H05B41/00 , H05B33/08
CPC分类号： H05B33/0815 , H05B33/0809 , H05B33/0821 , H05B33/0827 , H05B33/083
摘要： An LED lighting device 1 lights LED blocks 4a and 4b which correspond to a plurality of functions of an illuminator such as headlights and are connected in series. The LED blocks 4a and 4b are connected in series with a current converting unit 5. While the LED blocks 4a and 4b are supplied with a current Ia from a single DC/DC converter unit 3, the LED block 4b is supplied with a current Ib that passes through conversion by the current converting unit 5 and that differs from the current Ia the DC/DC converter unit 3 outputs. Thus, the LED blocks 4a and 4b are each lit with appropriate brightness.
摘要翻译： LED照明装置1照亮与块灯等照明装置的多个功能对应的LED块4a，4b，并串联连接。 LED块4a和4b与电流转换单元5串联连接。当LED块4a和4b从单个DC / DC转换器单元3被提供有电流Ia时，向LED块4b提供电流Ib 其通过当前转换单元5的转换，并且与DC / DC转换器单元3输出的电流Ia不同。因此，LED块4a和4b分别以适当的亮度点亮。

9. 发明申请

US20140368167A1 DC/DC CONVERTER, ON-BOARD UNIT AND CHARGING DEVICE 有权
标题翻译： DC / DC转换器，板上单元和充电装置
公开(公告)号：US20140368167A1
公开(公告)日：2014-12-18
申请号：US14371682
申请日：2012-04-27
申请人： Susumu Okura , Takashi Ohsawa
发明人： Susumu Okura , Takashi Ohsawa
IPC分类号： H02M3/335 , B60Q1/30 , B60L11/18
CPC分类号： H02M3/33507 , B60L11/1811 , B60L2210/10 , B60Q1/30 , H02J5/005 , H02J7/025 , H02J50/12 , H02M3/33576
摘要： A DC/DC converter 1 is configured to allow separation of a primary side constitution unit 3 and a secondary side constitution unit 4 of a transformer 2. A secondary side switching element FET 2 is provided in the secondary side constitution unit 4, and controls power supply to a load 12 by intermitting an output of a secondary winding L2. The primary side constitution unit 3 detects an electrical behavior of the primary side generated by the intermittent operation of the secondary side, and controls the power supplied from the primary winding L1 to the secondary winding L2 by operating the intermittent operation of the primary side switching element FET 1 such that a cycle or duty of the intermittent operation of the secondary side falls within a predetermined range.
摘要翻译： DC / DC转换器1被配置为允许分离变压器2的初级侧构造单元3和次级侧构造单元4.次级侧开关元件FET2设置在次级侧构成单元4中，并且控制功率通过间接二次绕组L2的输出来供给到负载12。初级侧构成单元3检测由次级侧的间歇动作产生的一次侧的电气行为，并且通过操作初级侧开关元件的间歇动作来控制从初级绕组L1向次级绕组L2供给的电力 FET 1，使得次级侧的间歇动作的周期或占空比落在预定范围内。

10. 发明授权

US08575839B2 Headlamp LED lighting apparatus and vehicle headlamp lighting system 有权
标题翻译：前照灯LED照明装置和车灯前照灯系统
公开(公告)号：US08575839B2
公开(公告)日：2013-11-05
申请号：US13381876
申请日：2009-09-10
申请人： Yu Inoue , Takashi Ohsawa
发明人： Yu Inoue , Takashi Ohsawa
IPC分类号： B60Q1/04
CPC分类号： H05B33/0893
摘要： A headlamp LED lighting apparatus, which lights an LED block 2 having a plurality of LEDs connected in series, samples the output voltage of the headlamp LED lighting apparatus, calculates the average voltage during every prescribed interval, and has a storage unit for storing the average voltage during every prescribed interval calculated. A control circuit 8 compares the voltage variation in the average voltage during every prescribed interval read out of the storage unit with a prescribed threshold, and decides an LED failure of the LED block 2 from a result of the comparison.
摘要翻译：照亮具有串联连接的多个LED的LED块2的前照灯LED照明装置对前照灯LED照明装置的输出电压进行采样，计算每个规定间隔期间的平均电压，并具有用于存储平均值的存储单元计算每个规定间隔期间的电压。控制电路8将从存储单元读出的每个规定间隔期间的平均电压的电压变化与规定的阈值进行比较，并根据比较结果判定LED块2的LED故障。

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